DP AK ACTT2S-800E AC Thyristor Triac power switch 27 February 2013 Product data sheet 1. General description AC Thyristor Triac power switch in a SOT428 (DPAK) surface mountable plastic package with self-protective clamping capabilities against low and high energy transients. 2. Features and benefits • • • • • • • • • • • • Clamping structure ensuring safe high over-voltage withstand capability Direct interfacing with low power drivers and microcontrollers Full cycle AC conduction Over-voltage withstand capability to IEC 61000-4-5 Pin compatible with standard triacs Planar passivated for voltage ruggedness and reliability Protective self turn-on capability for high energy transients Safe clamping capability for low energy over-voltage transients Sensitive gate for easy logic level triggering Surface mountable package Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications • • • • AC fan, pump and compressor controls Highly inductive, resistive and safety loads Large and small appliances (White Goods) Reversing induction motor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 800 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 14 A Tj junction temperature - - 125 °C IT(RMS) RMS on-state current - - 2 A full sine wave; Tmb ≤ 115 °C; Fig. 1; Fig. 2; Fig. 3 Scan or click this QR code to view the latest information for this product ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch Symbol Parameter Conditions Min Typ Max Unit VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state; - - 2 kV - - 10 mA - - 10 mA - - 10 mA ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850 - - V VDM = 536 V; Tj = 125 °C; (VDM = 67% 500 - - V/µs 3 - - A/ms Fig. 6 Static characteristics IGT VD = 12 V; IT = 100 mA; LD+ G+; gate trigger current Tj = 25 °C; Fig. 8 VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 VCL clamping voltage Dynamic charateristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit; Fig. 13 dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 2 A; dVcom/dt = 10 V/µs; gate open circuit; Fig. 14; Fig. 15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 CM common 2 LD load 3 G gate mb LD mounting base; load Graphic symbol LD mb G CM 003aaf296 2 1 3 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number ACTT2S-800E ACTT2S-800E Product data sheet Package Name Description Version DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 2 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 115 °C; Fig. 1; Min Max Unit - 800 V - 2 A - 15.4 A - 14 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 I t I t for fusing tp = 10 ms; sine-wave pulse - 0.98 A s dIT/dt rate of rise of on-state current IT = 3 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current t = 20 μs - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C VPP peak pulse voltage - 2 kV 2 2 over any 20 ms period Tj = 25 °C; non-repetitive, off-state; 2 Fig. 6 003aag689 6 IT(RMS) (A) IT(RMS) (A) 4 2 2 1 0 10-2 Fig. 1. 10-1 Product data sheet 115 °C 0 -50 1 10 surge duration (s) RMS on-state current as a function of surge duration; maximum values ACTT2S-800E 003aag690 3 Fig. 2. 50 100 Tmb (°C) 150 RMS on-state current as a function of mounting base temperature; maximum values All information provided in this document is subject to legal disclaimers. 27 February 2013 0 © NXP B.V. 2013. All rights reserved 3 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch 003aag691 5 Ptot (W) 4 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 3 110 Th(max) (°C) 113 α = 180° α 120° 116 90° 60° 2 119 30° 122 1 0 0 Fig. 3. 0.5 1 1.5 2 125 2.5 IT(RMS) (A) Total power dissipation as a function of RMS on-state current; maximum values 003aag683 16 ITSM (A) 12 8 IT 4 0 Fig. 4. ITSM t T Tj(init) = 25 °C max 1 102 10 number of cycles 103 Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values ACTT2S-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 4 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch 003aag684 103 ITSM IT t ITSM (A) tp Tj(init) = 25 °C max 102 (1) 10 10-2 Fig. 5. 10-1 1 10 102 tp (ms) Non-repetitive peak on-state current as a function of pulse width; maximum values IEC 61000-4-5 Standards Surge Generator RGen 2 Filtering Unit L R 20 10 H Load Model AC Mains RG DUT 220 003aak843 Fig. 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Fig. 7 - - 3 K/W Rth(j-a) thermal resistance from junction to ambient printed circuit board (FR4) mounted - 75 - K/W ACTT2S-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 5 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch 003aag087 10 (1) Zth(j-mb) (K/W) (2) 1 10-1 P t tp 10-2 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) Unidirectional (half cycle) (2) Bidirectional (full cycle) Fig. 7. Transient thermal impedance from junction to mounting base as a function of pulse width 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 100 mA; LD+ G+; - - 10 mA - - 10 mA - - 10 mA - - 25 mA - - 30 mA - - 25 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 8 VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 IL latching current VD = 12 V; IG = 100 mA; LD+ G+; Tj = 25 °C; Fig. 9 VD = 12 V; IG = 100 mA; LD+ G-; Tj = 25 °C; Fig. 9 VD = 12 V; IG = 100 mA; LD- G-; Tj = 25 °C; Fig. 9 IH holding current VD = 12 V; Tj = 25 °C; Fig. 10 - - 25 mA VT on-state voltage IT = 3 A; Tj = 25 °C; Fig. 11 - - 2 V VGT gate trigger voltage VD = 12 V; IT = 100 mA; Tj = 25 °C; - 0.8 1 V 0.2 0.45 - V - - 10 µA Fig. 12 VD = 400 V; IT = 100 mA; Tj = 125 °C; Fig. 12 ID off-state current ACTT2S-800E Product data sheet VD = 800 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 6 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch Symbol Parameter VCL clamping voltage Conditions Min Typ Max Unit VD = 800 V; Tj = 125 °C - - 0.5 mA ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850 - - V VDM = 536 V; Tj = 125 °C; (VDM = 67% 500 - - V/µs 3 - - A/ms Dynamic charateristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit; Fig. 13 dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 2 A; dVcom/dt = 10 V/µs; gate open circuit; Fig. 14; Fig. 15 003aag685 3 (1) IGT IGT(25°C) 2 IL IL(25°C) (2) 2 (3) 1 1 0 -50 Fig. 8. 0 50 100 Tj (°C) 0 -50 150 Normalized gate trigger current as a function of Fig. 9. junction temperature ACTT2S-800E Product data sheet 003aag686 3 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 27 February 2013 0 © NXP B.V. 2013. All rights reserved 7 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch 003aag687 3 003aag688 4 IT (A) IH IH(25°C) 3 2 2 1 1 0 -50 0 50 100 Tj (°C) 0 150 Fig. 10. Normalized holding current as a function of junction temperature VGT 1 (3) 2 VT (V) 3 003aag763 6 A B VGT(25°C) 1.2 4 0.8 2 0.4 -50 0 (2) Fig. 11. On-state current as a function of on-state voltage 003aag677 1.6 (1) 0 50 100 Tj (°C) 0 150 25 50 75 100 Tj (°C) 125 Fig. 12. Normalized gate trigger voltage as a function of Fig. 13. Normalized rate of rise of off-state voltage as a junction temperature function of junction temperature ACTT2S-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 8 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch 003aag764 12 003aag765 40 A [B] A [spec] A B 30 8 20 4 10 0 25 50 75 100 Tj (°C) 0 10-1 125 Fig. 14. Normalized critical rate of rise of commutating current as a function of junction temperature ACTT2S-800E Product data sheet 1 10 B (V/µs) 102 Fig. 15. Normalized critical rate of change of commutating current as a function of critical rate of change of commutating voltage; minimum values All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 9 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch 10. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E A A A1 b2 E1 mounting base D2 D1 HD 2 L2 L 1 L1 3 b1 b w M c A e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D1 D2 min E E1 min e e1 HD L L1 min L2 w y max mm 2.38 2.22 0.93 0.46 0.89 0.71 1.1 0.9 5.46 5.00 0.56 0.20 6.22 5.98 4.0 6.73 6.47 4.45 2.285 4.57 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig. 16. Package outline DPAK (SOT428) ACTT2S-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 10 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch 11. Soldering 7.00 6.15 5.90 5.80 1.80 1.00 4.725 4.60 5.75 5.65 6.50 1.15 3.60 6.00 2.45 6.00 6.125 0.30 2.40 2.30 solder lands 1.50 solder resist 4.57 1.30 1.40 1.65 occupied area SOT428 solder paste Fig. 17. Reflow soldering footprint for DPAK (SOT428) ACTT2S-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 11 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. ACTT2S-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 13 / 14 ACTT2S-800E NXP Semiconductors AC Thyristor Triac power switch 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................5 9 Characteristics ....................................................... 6 10 Package outline ................................................... 10 11 Soldering .............................................................. 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP B.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 February 2013 ACTT2S-800E Product data sheet All information provided in this document is subject to legal disclaimers. 27 February 2013 © NXP B.V. 2013. All rights reserved 14 / 14