Philips Semiconductors Product specification Thyristors GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - TO220AB PIN QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. MAX. UNIT VDRM, VRRM IT(AV) IT(RMS) ITSM BT151Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current 500C 500 650C 650 800C 800 V 7.5 12 100 7.5 12 100 7.5 12 100 A A A PIN CONFIGURATION DESCRIPTION 1 cathode 2 anode 3 gate tab BT151 series C SYMBOL tab a k g 1 23 anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 60134). SYMBO L PARAMETER VDRM, VRRM Repetitive peak off-state voltages IT(AV) Average on-state current RMS on-state current Non-repetitive peak on-state current IT(RMS) ITSM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj CONDITIONS MIN. half sine wave; Tmb ≤ 109 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms I2t for fusing t = 10 ms Repetitive rate of rise of ITM = 20 A; IG = 50 mA; on-state current after dIG/dt = 50 mA/µs triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature MAX. -500C 5001 -650C 6501 UNIT -800C 800 V - 7.5 A - 12 A - 100 110 50 50 A A A2s A/µs - 2 5 5 A V V -40 - 5 0.5 150 125 W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. April 2004 1 Rev 1.000 Philips Semiconductors Product specification Thyristors BT151 series C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - - 1.3 K/W - 60 - K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C 0.25 - 2 10 7 1.44 0.6 0.4 0.1 15 40 20 1.75 1.5 0.5 mA mA mA V V V mA MIN. TYP. MAX. UNIT 50 200 - 130 1000 2 - V/µs V/µs µs - 70 - µs DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; Gate open circuit RGK = 100 Ω ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω tgt tq April 2004 Gate controlled turn-on time Circuit commutated turn-off time 2 Rev 1.000 Philips Semiconductors Product specification Thyristors 15 BT151 series C Ptot / W Tmb(max) / C conduction angle degrees 30 60 90 120 180 10 form factor 120 105.5 4 2.8 2.2 1.9 1.57 100 time T Tj initial = 25 C max 1.9 2.2 112 2.8 ITSM IT a = 1.57 a ITSM / A 80 4 60 118.5 5 40 20 0 0 1 2 3 4 5 IT(AV) / A 6 7 125 8 0 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 1 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. ITSM / A 25 IT(RMS) / A 20 dI T /dt limit 15 100 10 I TSM IT 5 time T Tj initial = 25 C max 10 10us 100us 0 0.01 10ms 1ms 0.1 1 surge duration / s T/s Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 15 IT(RMS) / A 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 109˚C. BT151 1.6 109 C VGT(Tj) VGT(25 C) 1.4 10 1.2 1 5 0.8 0.6 0 -50 0 50 Tmb / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. April 2004 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.000 Philips Semiconductors Product specification Thyristors 3 BT151 series C IGT(Tj) IGT(25 C) 30 Tj = 125 °C Tj = 25 °C IT (A) 2.5 typ 20 2 max 1.5 10 1 0.5 Vo = 1.06 V Rs = 0.0304 ohms 0 -50 0 50 Tj / C 100 0 150 IL(Tj) IL(25 C) 0.5 1 1.5 2 VT (V) Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 0 10 BT145 2.5 Zth j-mb (K/W) 1 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms IH(Tj) IH(25 C) 10000 dVD/dt (V/us) 2.5 1000 2 RGK = 100 Ohms 1.5 100 1 gate open circuit 0.5 0 -50 0 50 Tj / C 100 10 150 50 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. April 2004 0 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 Rev 1.000 Philips Semiconductors Product specification Thyristors BT151 series C MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 2004 5 Rev 1.000 Philips Semiconductors Product specification Thyristors BT151 series C DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS2 PRODUCT STATUS3 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. April 2004 6 Rev 1.000