ETC BT136B_SERIES_E

Philips Semiconductors
Product specification
Triacs
sensitive gate
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a
plastic envelope suitable for surface
mounting, intended for use in general
purpose bidirectional switching and
phase control applications, where
high sensitivity is required in all four
quadrants.
PINNING - SOT404
PIN
BT136B series E
QUICK REFERENCE DATA
SYMBOL
VDRM
IT(RMS)
ITSM
PARAMETER
MAX.
MAX.
UNIT
BT136BRepetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
600E
600
800E
800
V
4
25
4
25
A
A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
mb
1
main terminal 1
2
main terminal 2
3
gate
mb
T2
T1
2
main terminal 2
1
G
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
CONDITIONS
MIN.
-
full sine wave; Tmb ≤ 107 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ GT2- GT2- G+
over any 20 ms period
MAX.
-600
6001
UNIT
-800
800
V
-
4
A
-
25
27
3.1
A
A
A2s
-40
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
June 2001
1
Rev 1.300
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136B series E
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
minimum footprint, FR4 board
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
55
3.0
3.7
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ GT2- GT2- G+
-
2.5
4.0
5.0
11
10
10
10
25
mA
mA
mA
mA
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
0.25
-
3.0
10
2.5
4.0
2.2
1.4
0.7
0.4
0.1
15
20
15
20
15
1.70
1.5
0.5
mA
mA
mA
mA
mA
V
V
V
mA
MIN.
TYP.
MAX.
UNIT
-
50
-
V/µs
-
2
-
µs
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
IL
Latching current
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
VD = 12 V; IGT = 0.1 A
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
ITM = 6 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
tgt
June 2001
2
Rev 1.300
Philips Semiconductors
Product specification
Triacs
sensitive gate
8
BT136B series E
Ptot / W
Tmb(max) / C
5
101
IT(RMS) / A
104
7
6
= 180
1
107 C
4
107
120
5
110
90
60
4
3
113
30
3
116
2
119
1
122
2
1
0
0
1
2
3
IT(RMS) / A
125
5
4
0
-50
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
0
50
Tmb / C
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
ITSM / A
12
IT(RMS) / A
ITSM
IT
10
T
time
8
Tj initial = 25 C max
100
6
dIT /dt limit
4
T2- G+ quadrant
2
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
30
ITSM / A
BT136
T
1.4
time
Tj initial = 25 C max
1.2
15
1
10
0.8
5
0.6
0
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
June 2001
VGT(Tj)
VGT(25 C)
I TSM
IT
20
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 107˚C.
1.6
25
0.1
1
surge duration / s
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 1.300
Philips Semiconductors
Product specification
Triacs
sensitive gate
3
BT136B series E
IGT(Tj)
IGT(25 C)
12
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ GT2- GT2- G+
2.5
IT / A
typ
10
max
Vo = 1.27 V
Rs = 0.091 ohms
8
2
6
1.5
4
1
2
0.5
0
-50
0
50
Tj / C
100
0
150
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
0
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)
unidirectional
2.5
bidirectional
1
2
1.5
0.1
1
P
D
tp
t
0.5
0
-50
0
50
Tj / C
100
0.01
10us
150
1ms
10ms
0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
IH(Tj)
IH(25C)
1000
dVD/dt (V/us)
2.5
100
2
1.5
10
1
0.5
0
-50
0
50
Tj / C
100
1
150
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
June 2001
0
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
4
Rev 1.300
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136B series E
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
June 2001
5
Rev 1.300
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136B series E
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS2
PRODUCT
STATUS3
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
June 2001
6
Rev 1.300