ETC BT258_SERIES

Philips Semiconductors
Product specification
Thyristors
logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a plastic envelope, intended for use
in general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
PINNING - TO220AB
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
tab
BT258 series
QUICK REFERENCE DATA
SYMBOL
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
PARAMETER
MAX. MAX. MAX. UNIT
BT258Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
500R
500
600R
600
800R
800
V
5
8
75
5
8
75
5
8
75
A
A
A
PIN CONFIGURATION
SYMBOL
tab
a
k
g
1 23
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
half sine wave; Tmb ≤ 111 ˚C
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
MIN.
MAX.
UNIT
-
-500R -600R -800R
5001
6001
800
V
-
5
8
A
A
-
75
82
28
50
A
A
A2s
A/µs
-40
-
2
5
5
0.5
150
1252
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
junction to mounting base
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
2.0
K/W
-
60
-
K/W
MIN.
TYP.
MAX.
UNIT
0.1
-
50
0.4
0.3
1.3
0.4
0.2
0.1
200
10
6
1.6
1.5
0.5
µA
mA
mA
V
V
V
mA
MIN.
TYP.
MAX.
UNIT
50
100
-
V/µs
-
2
-
µs
-
100
-
µs
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
IGT
IL
IH
VT
VGT
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
ID, IR
Off-state leakage current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 16 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 100 Ω
ITM = 10 A; VD = VDRM(max); IG = 5 mA;
dIG/dt = 0.2 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
tgt
tq
October 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258 series
Ptot (W)
Tmb(max) (˚C)
109
a = 1.57
111
8
conduction
angle
degrees
30
60
90
120
180
6
form
factor
(a)
1.9
4
2.8
2.2
1.9
1.57
2.2
2.8
4
4
2
0
0
4
2
IT(AV) (A)
I TSM
70
IT
113
60
115
50
time
T
Tj initial = 25 C max
117
40
119
30
121
20
123
10
125
0
6
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
1000
ITSM / A
80
1
10
100
Number of half cycles at 50Hz
1000
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
ITSM / A
24
IT(RMS) / A
20
16
dI T/dt limit
100
12
I TSM
IT
8
time
T
4
Tj initial = 25 C max
10
10us
100us
0
0.01
10ms
1ms
0.1
1
surge duration / s
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
9
IT(RMS) / A
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 111˚C.
BT258
1.6
111 C
8
10
VGT(Tj)
VGT(25 C)
1.4
7
6
1.2
5
4
1
3
0.8
2
0.6
1
0
-50
0
50
Tmb / C
100
0.4
-50
150
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
October 2002
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
3
BT258 series
IGT(Tj)
IGT(25 C)
I /A
30 T
Tj = 125 °C
Tj = 25 °C
2.5
20
2
1.5
typ
10
1
max
Vo = 1 V
Rs = 0.04 Ω
0.5
0
-50
0
0
50
Tj / C
100
0
150
3
1
VT / V
1.5
2
Fig.10. Typical and maximum on-state characteristic.
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
0.5
10
BT150
Zth j-mb (K/W)
2.5
1
2
1.5
0.1
1
P
D
tp
t
0.5
0
-50
0
50
Tj / C
100
0.01
10us
150
1ms
10ms
0.1s
1s
10s
tp / s
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
IH(25 C)
1000
dVD/dt (V/us)
RGK = 100 ohms
2.5
100
2
1.5
10
1
0.5
0
-50
0
50
Tj / C
100
1
150
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
October 2002
0
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
4
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 2002
5
Rev 2.000
Philips Semiconductors
Product specification
Thyristors
logic level
BT258 series
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS3
PRODUCT
STATUS4
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
3 Please consult the most recently issued datasheet before initiating or completing a design.
4 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
October 2002
6
Rev 2.000