DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES BGD814 PINNING - SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input 2, 3 • Silicon nitride passivation common 5 • Rugged construction +VB 7, 8 • Gold metallization ensures excellent reliability. common 9 output APPLICATIONS • CATV systems operating in the 40 to 870 MHz frequency range. handbook, halfpage 1 2 3 5 7 8 9 DESCRIPTION Side view Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER CONDITIONS power gain total current consumption (DC) MIN. MAX. UNIT f = 45 MHz 19.7 20.3 dB f = 870 MHz 20.5 21.5 dB VB = 24 V 380 410 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VB supply voltage − 30 Vi RF input voltage − 70 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C 2001 Nov 01 2 V Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 CHARACTERISTICS Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 45 MHz 19.7 − 20.3 dB f = 870 MHz 20.5 − 21.5 dB dB SL slope straight line f = 45 to 870 MHz; note 1 0.5 − 1.5 FL flatness straight line f = 45 to 100 MHz − − ±0.25 dB f = 100 to 800 MHz − − ±0.5 dB f = 800 to 870 MHz −0.4 − 0.1 dB s11 s22 input return losses output return losses f = 45 to 80 MHz 25 − − dB f = 80 to 160 MHz 22 − − dB f = 160 to 320 MHz 19 − − dB f = 320 to 550 MHz 17 − − dB f = 550 to 650 MHz 17 − − dB f = 650 to 750 MHz 16 − − dB f = 750 to 870 MHz 15 − − dB f = 870 to 914 MHz 12 − − dB f = 45 to 80 MHz 24 − − dB f = 80 to 160 MHz 22 − − dB f = 160 to 320 MHz 17 − − dB f = 320 to 550 MHz 18 − − dB f = 550 to 650 MHz 16 − − dB f = 650 to 750 MHz 15 − − dB f = 750 to 870 MHz 15 − − dB f = 870 to 914 MHz 13 − − dB s21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz − − −66 dB 112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz − − −60.5 dB 132 chs flat; Vo = 44 dBmV; fm = 859.25 MHz Xmod cross modulation − − −56 dB 112 chs; fm = 547.25 MHz; Vo = 50.2 dBmV at − 745 MHz; note 2 − −55.5 dB 79 chs; fm = 331.25 MHz; Vo = 47.3 dBmV at 547 MHz; note 3 − − −65 dB 79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz − − −66 dB 112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz − − −62.5 dB 132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz − − −61 dB 112 chs; fm = 745.25 MHz; Vo = 50.2 dBmV at − 745 MHz; note 2 − −57 dB − − −66 dB 79 chs; fm = 445.25 MHz; Vo = 47.3 dBmV at 547 MHz; note 3 2001 Nov 01 3 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier SYMBOL CSO PARAMETER composite second order distortion CONDITIONS BGD814 MIN. TYP. MAX. UNIT 79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz − − −68 dB 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz − − −61 dB 132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz − − −57 dB 112 chs; fm = 210 MHz; Vo = 50.2 dBmV at 745 MHz; note 2 − − −56 dB 79 chs; fm = 210 MHz; Vo = 47.3 dBmV at 547 MHz; note 3 − − −64 dB d2 second order distortion note 4 − − −69 dB Vo output voltage dim = −60 dB; note 5 64 − − dBmV CTB compression = 1 dB; 132 chs flat; f = 859.25 MHz 48 − − dBmV CSO compression = 1 dB; 132 chs flat; f = 860.5 MHz 50 − − dBmV f = 50 MHz − − 5.5 dB f = 550 MHz − − 5.5 dB f = 750 MHz − − 6.5 dB f = 870 MHz − − 7.5 dB note 6 380 395 410 mA NF Itot noise figure total current consumption (DC) Notes 1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz. 2. Tilt = 10.2 dB (55 to 745 MHz). 3. Tilt = 7.3 dB (55 to 547 MHz). 4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 5. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo − 6 dB; fr = 860.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 849.25 MHz. 6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. 2001 Nov 01 4 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MLD345 −50 handbook, halfpage (1) CTB (dB) BGD814 MLD346 −40 52 handbook, halfpage (1) Xmod Vo (dBmV) 52 Vo (dBmV) (dB) −60 48 −50 48 −70 44 −60 44 (2) (3) (4) (2) −80 −90 40 −70 36 1000 800 f (MHz) −80 (3) (4) 200 0 400 600 200 0 400 600 40 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. Fig.2 (3) Typ. (4) Typ. −3 σ. Composite triple beat as a function of frequency under tilted conditions. MLD347 −60 handbook, halfpage (1) CSO (dB) (2) −70 Fig.3 52 Vo (dBmV) 48 (3) −80 −90 44 40 (4) −100 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. Fig.4 (3) Typ. (4) Typ. −3 σ. Composite second order distortion as a function of frequency under tilted conditions. 2001 Nov 01 5 (3) Typ. (4) Typ. −3 σ. Cross modulation as a function of frequency under tilted conditions. Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MLD348 −40 handbook, halfpage (1) CTB (dB) MLD349 −40 52 handbook, halfpage Vo (dBmV) (dB) −50 48 52 (1) Xmod Vo (dBmV) −50 BGD814 48 (2) −60 (2) (3) (4) −80 200 0 400 600 44 (4) 40 −70 36 1000 800 f (MHz) −80 −70 (3) −60 44 40 200 0 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz). ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. Fig.5 (3) Typ. (4) Typ. −3 σ. Composite triple beat as a function of frequency under tilted conditions. MLD350 −50 handbook, halfpage (1) CSO (dB) Fig.6 52 Vo (dBmV) −60 (2) 48 −70 (3) 44 −80 (4) 40 −90 0 200 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz). (1) Vo. (2) Typ. +3 σ. Fig.7 (3) Typ. (4) Typ. −3 σ. Composite second order distortion as a function of frequency under tilted conditions. 2001 Nov 01 6 (3) Typ. (4) Typ. −3 σ. Cross modulation as a function of frequency under tilted conditions. Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L min. p Q max. 8.8 4.15 3.85 2.4 REFERENCES IEC JEDEC EIAJ q1 q2 38.1 25.4 10.2 S U1 U2 max. 4.2 44.75 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 3.8 ISSUE DATE 99-02-06 SOT115J 2001 Nov 01 q 7 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 2001 Nov 01 8 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 9 BGD814 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 10 BGD814 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 11 BGD814 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/04/pp12 Date of release: 2001 Nov 01 Document order number: 9397 750 08857