PSMN4R6-60PS N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 Rev. 01 — 11 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit - - 60 V - - 100 A - - 211 W -55 - 175 °C - 14.8 - nC - 70.8 - nC VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12 - 8.4 11.5 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 - 3.5 4.6 mΩ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C VDS ID drain current Tmb = 25 °C; see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Tj junction temperature [1] Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 14 and 15 Static characteristics RDSon [1] drain-source on-state resistance Continuous current is limited by package. PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain Simplified outline Graphic symbol D mb 3 S source mb D mounting base; connected to drain G S mbb076 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number PSMN4R6-60PS Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage ID drain current -20 20 V Tmb = 100 °C; see Figure 1 [1] - 99.7 A Tmb = 25 °C; see Figure 1 [1] - 100 A - 565 A IDM peak drain current tp = 10 µs; pulsed; Tmb = 25 °C; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 211 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C; ISM peak source current tp = 10 µs; pulsed; Tmb = 25 °C [1] [1] - 100 A - 565 A Continuous current is limited by package. PSMN4R6-60PS_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 003aad760 150 ID (A) Pder (%) (1) 100 80 50 40 0 0 0 Fig 1. 03aa16 120 50 100 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature 0 50 100 150 200 Tmb (°C) Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aad761 103 ID (A) Limit RDSon = VDS / ID 10 μs 102 100 μs DC 10 1 ms 10 ms 100 ms 1 10−1 10−1 Fig 3. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN4R6-60PS_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.38 1.04 K/W 003aad762 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10−1 0.1 0.05 0.02 single shot 10−2 P δ= t tp T 10−3 10−6 Fig 4. tp T 10−5 10−4 10−3 10−2 10−1 tp (S) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R6-60PS_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 and 11 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11 - - 4.8 V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage VGSth IDSS drain leakage current ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11 1 - - V VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA VDS = 60 V; VGS = 0 V; Tj = 125 °C - - 200 µA IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12 - 8.4 11.5 mΩ VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12 - - 7.4 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 - 3.5 4.6 mΩ f = 1 MHz - 0.79 - Ω total gate charge ID = 0 A; VDS = 30 V; VGS = 10 V; see Figure 14 - 63 - nC - 70.8 - nC QGS gate-source charge ID = 25 A; VDS = 30 V; VGS = 10 V; see Figure 14 and 15 - 19.5 - nC QGS(th) pre-threshold gate-source charge ID = 25 A; VDS = 30 V; VGS = 10 V; see Figure 14 - 13.5 - nC QGS(th-pl) post-threshold gate-source charge - 6 - nC QGD gate-drain charge ID = 25 A; VDS = 30 V; VGS = 10 V; see Figure 14 and 15 - 14.8 - nC VGS(pl) gate-source plateau voltage VDS = 30 V; see Figure 14 and 15 - 4.3 - V Ciss input capacitance - 4426 - pF Coss output capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 - 567 - pF Crss reverse transfer capacitance - 293 - pF td(on) turn-on delay time - 26 - ns tr rise time - 24 - ns td(off) turn-off delay time - 58 - ns tf fall time - 22 - ns RG gate resistance Dynamic characteristics QG(tot) VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 4.7 Ω Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 - 0.81 1.1 V trr reverse recovery time - 45 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V - 64 - nC PSMN4R6-60PS_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 003aad763 100 15 ID (A) 6 5.5 5 8 003aad769 100 gfs (S) 80 80 60 60 4.5 40 40 20 20 VGS (V) = 4 0 0 0 Fig 5. 0.5 1 1.5 VDS (V) 2 Output characteristics: drain current as a function of drain-source voltage; typical values 003aad765 100 ID (A) 0 Fig 6. 20 40 60 80 ID (A) 100 Forward transconductance as a function of drain current; typical values 003aad764 8000 C (pF) Ciss 80 6000 60 Crss 4000 40 Tj = 175 °C Tj = 25 °C 2000 20 0 0 0 Fig 7. 2 4 VGS (V) 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values PSMN4R6-60PS_1 Product data sheet 0 Fig 8. 4 8 VGS (V) 12 Input and reverse transfer capacitances as a function of gate-source voltage, typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 003aad766 20 03aa35 10−1 ID (A) RDSon (mΩ) min 10−2 typ max 15 10−3 10 10−4 5 10−5 10−6 0 4 Fig 9. 8 12 16 VGS (V) 20 2 4 6 VGS (V) Drain-source on-state resistance as a function of gate-source voltage; typical values 003aad280 5 0 Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aad696 2.4 a VGS(th) (V) 2 4 max 1.6 3 typ 1.2 2 min 0.8 1 0 −60 0.4 0 60 120 180 Tj (°C) Fig 11. Gate-source threshold voltage as a function of junction temperature PSMN4R6-60PS_1 Product data sheet 0 -60 0 60 120 Tj (°C) 180 Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 003aad767 16 VDS RDSon 5 VGS = 4.5 V (mΩ) ID 12 VGS(pl) VGS(th) 8 5.5 VGS 6 QGS1 8 4 QGS2 QGS 10 15 QGD QG(tot) 003aaa508 0 0 20 40 60 80 ID (A) 100 Fig 13. Drain-source on-state resistance as a function of drain current; typical values 003aad771 10 Fig 14. Gate charge waveform definitions 003aad768 104 VGS C (pF) (V) 8 Ciss VDS (V) = 30 12 6 48 103 4 Coss Crss 2 0 0 20 40 60 QG (nC) 80 Fig 15. Gate-source voltage as a function of gate charge; typical values PSMN4R6-60PS_1 Product data sheet 102 10−1 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 003aad770 100 IS (A) 80 60 40 Tj = 175 °C Tj = 25 °C 20 0 0 0.3 0.6 0.9 VSD (V) 1.2 Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN4R6-60PS_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 18. Package outline SOT78 (TO-220AB) PSMN4R6-60PS_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN4R6-60PS_1 20100311 Product data sheet - - PSMN4R6-60PS_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. PSMN4R6-60PS_1 Product data sheet Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PSMN4R6-60PS_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 March 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 PSMN4R6-60PS NXP Semiconductors N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 March 2010 Document identifier: PSMN4R6-60PS_1