APTM50UM13SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S VDSS = 500V RDSon = 13mΩ typ @ Tj = 25°C ID = 335A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Q1 G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 335 250 1340 ±30 15 3290 71 50 3000 Unit V A V mΩ W A November, 2013 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50UM13SAG Rev 3 Symbol VDSS APTM50UM13SAG Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 10V, ID = 167.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Min Typ 13 3 Max 400 15 5 ±300 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 42.2 8.24 0.42 Max Unit nF 800 VGS = 10V VBus = 250V ID =335A 200 nC 420 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 335A RG = 0.8Ω 42 ns 96 100 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 335A, RG = 0.8Ω 4 mJ 4.16 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 335A, RG =0.8Ω 6.32 mJ 4.64 0.038 °C/W Max Unit V µA A Series diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 360A VR = 400V di/dt = 1200A/µs Junction to Case Thermal Resistance Min 600 Typ 150 Tj = 125°C Tj = 25°C 360 1.7 2 1.4 70 Tj = 125°C Tj = 25°C Tj = 125°C 140 0.6 4.2 Tc = 80°C 2.5 V ns µC 0.16 www.microsemi.com November, 2013 VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=600V DC Forward Current IF = 360A Diode Forward Voltage IF = 720A IF = 360A °C/W 2–7 APTM50UM13SAG Rev 3 Symbol VRRM IRM IF APTM50UM13SAG Parallel diode ratings and characteristics Symbol VRRM IRM IF VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR = 600V DC Forward Current IF = 360A Diode Forward Voltage IF = 720A IF = 360A trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 360A VR = 400V di/dt = 1200A/µs Min 600 Typ Max 150 Tc = 80°C Tj = 125°C Tj = 25°C 360 1.7 2 1.4 70 Tj = 125°C Tj = 25°C Tj = 125°C 140 0.6 4.2 Junction to Case Thermal Resistance Unit V µA A 2.5 V ns µC 0.16 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature To heatsink M6 Mounting torque For terminals M5 Package Weight Min 4000 -40 -40 -40 -40 3 2 Max 150 TJmax -25 125 100 5 3.5 300 Unit V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM50UM13SAG Rev 3 November, 2013 SP6 Package outline (dimensions in mm) APTM50UM13SAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 600 800 7.5V 7V ID, Drain Current (A) 600 6.5V 400 6V 200 5.5V 5V 0 0 5 10 15 20 400 300 200 TJ=125°C TJ=25°C 100 0 0 25 VDS , Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS , Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS (on) vs Drain Current 1.2 350 VGS=10V 1.1 VGS=20V 1 0.9 0 120 240 360 480 600 720 ID, Drain Current (A) 300 250 200 150 100 50 November, 2013 Normalized to VGS=10V @ 167.5A ID, DC Drain Current (A) RDS (on) Drain to Source ON Resistance VDS > I D(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM50UM13SAG Rev 3 ID, Drain Current (A) VGS=10&15V Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 25 50 75 100 125 150 RDS (on), Drain to Source ON resistance (Normalized) ON resistance vs Temperature 2.5 VGS=10V I D=167.5A 2.0 1.5 1.0 0.5 25 Threshold Voltage vs Temperature 100 125 150 Maximum Safe Operating Area 10000 ID, Drain Current (A) 0.9 0.8 0.7 0.6 1000 100 us limited by RDSon 100 1 ms Single pulse TJ =150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss 1000 Crss VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss 10000 100 0 10 20 30 10 100 1000 VDS , Drain to Source Voltage (V) TC, Case Temperature (°C) 40 50 VDS , Drain to Source Voltage (V) www.microsemi.com Gate Charge vs Gate to Source Voltage 14 ID=335A VDS=100V 12 TJ =25°C VDS=250V 10 8 VDS=400V 6 4 2 0 0 200 400 600 800 November, 2013 VGS (TH), Threshold Voltage (Normalized) 75 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 C, Capacitance (pF) 50 1000 Gate Charge (nC) 5–7 APTM50UM13SAG Rev 3 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM50UM13SAG APTM50UM13SAG Delay Times vs Current Rise and Fall times vs Current 160 110 70 50 80 tr 0 10 60 140 220 300 380 460 60 540 140 ID, Drain Current (A) Switching Energy vs Current 300 380 460 540 Switching Energy vs Gate Resistance 24 VDS=333V R G =0.8Ω TJ=1 25 °C L=100µH 10 8 Switching Energy (mJ) Eon Eoff 6 4 2 VDS=333V I D=335A TJ=1 25 °C L=100µH 20 16 12 Eon 8 Eoff 4 0 60 140 220 300 380 460 0 540 Operating Frequency vs Drain Current 400 300 ZCS 200 100 VDS=333V D=50% R G =0.8Ω TJ=1 25 °C TC =75 °C 4 6 8 10 12 14 Gate Resistance (Ohms) ZVS Hard switching IDR, Reverse Drain Current (A) ID, Drain Current (A) 2 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 100 150 200 250 300 0.2 0.4 0.6 0.8 1 November, 2013 1 0 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com 6–7 APTM50UM13SAG Rev 3 Switching Energy (mJ) 220 ID, Drain Current (A) 12 Frequency (kHz) tf 40 td(on) 30 VDS=333V R G =0.8Ω TJ=1 25 °C L=100µH 120 td(off) VDS=333V R G =0.8Ω TJ=1 25 °C L=100µH t r and t f (ns) td(on) and td(off) (ns) 90 APTM50UM13SAG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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