ADPOW APTM50UM13S-ALN

APTM50UM13S-AlN
Single switch
Series & parallel diodes
MOSFET Power Module
SK
CR1
D
S
Q1
G
S
D
VDSS = 500V
RDSon = 13mΩ max @ Tj = 25°C
ID = 335A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
G
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
335
250
1340
±30
13
3290
71
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM50UM13S-AlN Rev 0 July, 2004
SK
APTM50UM13S-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 1mA
Min
500
Tj = 25°C
VGS = 0V,VDS = 400V
Tj = 125°C
VGS = 10V, ID = 167.5A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
VGS = 0V,VDS = 500V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
3
Min
VGS = 10V
VBus = 250V
ID =335A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Typ
42.2
8.24
0.42
800
Max
Unit
V
400
2000
13
5
±300
mΩ
V
nA
Max
Unit
µA
nF
nC
200
420
21
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 335A
R G = 0.8Ω
Rise Time
Typ
42
ns
96
100
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 335A, R G = 0.8Ω
4
mJ
4.16
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 335A, R G =0.8Ω
6.32
mJ
4.64
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 240A
IF = 480A
IF = 240A
IF = 240A
VR = 133V
di/dt = 800A/µs
IF = 240A
VR = 133V
di/dt = 800A/µs
Min
Tj = 125°C
Typ
240
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
240
Tj = 125°C
1000
T c = 85°C
APT website – http://www.advancedpower.com
Max
Unit
A
1.15
V
ns
nC
2–6
APTM50UM13S-AlN Rev 0 July, 2004
Series diode ratings and characteristics
APTM50UM13S-AlN
Parallel diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 360A
IF = 720A
IF = 360A
IF = 360A
VR = 400V
di/dt = 1000A/µs
IF = 360A
VR = 400V
di/dt = 1000A/µs
Min
Tj = 125°C
Typ
360
1.6
1.9
1.4
Tj = 25°C
130
Tj = 125°C
170
Tj = 25°C
1.32
Tj = 125°C
5.5
T c = 70°C
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
Parallel diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
Unit
A
1.8
V
ns
µC
Max
0.038
0.23
0.16
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM50UM13S-AlN Rev 0 July, 2004
Package outline
APTM50UM13S-AlN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
0.035
0.03
0.9
0.7
0.025
0.02
0.015
0.5
0.3
0.01
0.005
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
600
6.5V
400
6V
200
5.5V
5
10
15
20
VDS, Drain to Source Voltage (V)
480
400
320
240
TJ=25°C
160
TJ=125°C
TJ=-55°C
0
0
25
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
350
Normalized to
VGS=10V @ 167.5A
1.3
1.2
VGS=10V
1.1
1
VGS=20V
0.9
0.8
300
250
200
150
100
50
0
0
120
240 360 480 600
I D, Drain Current (A)
720
25
APT website – http://www.advancedpower.com
50
75
100
125
TC, Case Temperature (°C)
150
4–6
APTM50UM13S-AlN Rev 0 July, 2004
RDS(on) Drain to Source ON Resistance
0
560
80
5V
0
V DS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
640
7V
ID, Drain Current (A)
7.5V
ID, DC Drain Current (A)
ID, Drain Current (A)
VGS=10&15V
1.4
Transfert Characteristics
720
800
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=167.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50 75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
10000
1.2
1.0
0.9
0.8
0.7
1000
100 us
limited by RDSon
1 ms
100
10
10 ms
Single pulse
TJ=150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Coss
10000
1000
Crss
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
1
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
14
VDS=100V
I D=335A
TJ =25°C
12
V DS =250V
10
VDS=400V
8
6
4
2
0
0
200
APT website – http://www.advancedpower.com
400
600
800
1000
Gate Charge (nC)
5–6
APTM50UM13S-AlN Rev 0 July, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50UM13S-AlN
APTM50UM13S-AlN
Delay Times vs Current
Rise and Fall times vs Current
160
90
VDS=333V
RG=0.8Ω
TJ=125°C
L=100µH
70
50
tf
80
tr
40
td(on)
30
VDS=333V
RG=0.8Ω
TJ=125°C
L=100µH
120
td(off)
t r and tf (ns)
td(on) and t d(off) (ns)
110
10
0
60
140
220 300 380 460
I D, Drain Current (A)
60
540
140
220 300 380 460
ID, Drain Current (A)
540
Switching Energy vs Gate Resistance
Switching Energy vs Current
V DS=333V
RG=0.8Ω
T J=125°C
L=100µH
10
8
Switching Energy (mJ)
Eon
Eoff
6
4
2
20
Eoff
16
12
Eon
8
4
0
60
140 220 300 380 460
I D, Drain Current (A)
0
540
Operating Frequency vs Drain Current
IDR, Reverse Drain Current (A)
300
ZCS
200
VDS=333V
D=50%
RG=0.8Ω
TJ=125°C
TC=75°C
100
0
50
100
ZVS
Hard
switching
150 200 250 300
I D, Drain Current (A)
2
4
6
8
10
12
14
Gate Resistance (Ohms)
400
Frequency (kHz)
VDS=333V
ID=335A
T J=125°C
L=100µH
24
350
Source to Drain Diode Forward Voltage
1000
TJ =150°C
100
TJ =25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM50UM13S-AlN Rev 0 July, 2004
Switching Energy (mJ)
12