APTM50UM13S-AlN Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G S D VDSS = 500V RDSon = 13mΩ max @ Tj = 25°C ID = 335A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 335 250 1340 ±30 13 3290 71 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50UM13S-AlN Rev 0 July, 2004 SK APTM50UM13S-AlN All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 1mA Min 500 Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 167.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V VGS = 0V,VDS = 500V Test Conditions VGS = 0V VDS = 25V f = 1MHz 3 Min VGS = 10V VBus = 250V ID =335A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Typ 42.2 8.24 0.42 800 Max Unit V 400 2000 13 5 ±300 mΩ V nA Max Unit µA nF nC 200 420 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 335A R G = 0.8Ω Rise Time Typ 42 ns 96 100 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 335A, R G = 0.8Ω 4 mJ 4.16 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 335A, R G =0.8Ω 6.32 mJ 4.64 X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 240A IF = 480A IF = 240A IF = 240A VR = 133V di/dt = 800A/µs IF = 240A VR = 133V di/dt = 800A/µs Min Tj = 125°C Typ 240 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 240 Tj = 125°C 1000 T c = 85°C APT website – http://www.advancedpower.com Max Unit A 1.15 V ns nC 2–6 APTM50UM13S-AlN Rev 0 July, 2004 Series diode ratings and characteristics APTM50UM13S-AlN Parallel diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 360A IF = 720A IF = 360A IF = 360A VR = 400V di/dt = 1000A/µs IF = 360A VR = 400V di/dt = 1000A/µs Min Tj = 125°C Typ 360 1.6 1.9 1.4 Tj = 25°C 130 Tj = 125°C 170 Tj = 25°C 1.32 Tj = 125°C 5.5 T c = 70°C Thermal and package characteristics Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max Unit A 1.8 V ns µC Max 0.038 0.23 0.16 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM50UM13S-AlN Rev 0 July, 2004 Package outline APTM50UM13S-AlN Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.03 0.9 0.7 0.025 0.02 0.015 0.5 0.3 0.01 0.005 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 600 6.5V 400 6V 200 5.5V 5 10 15 20 VDS, Drain to Source Voltage (V) 480 400 320 240 TJ=25°C 160 TJ=125°C TJ=-55°C 0 0 25 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 350 Normalized to VGS=10V @ 167.5A 1.3 1.2 VGS=10V 1.1 1 VGS=20V 0.9 0.8 300 250 200 150 100 50 0 0 120 240 360 480 600 I D, Drain Current (A) 720 25 APT website – http://www.advancedpower.com 50 75 100 125 TC, Case Temperature (°C) 150 4–6 APTM50UM13S-AlN Rev 0 July, 2004 RDS(on) Drain to Source ON Resistance 0 560 80 5V 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 640 7V ID, Drain Current (A) 7.5V ID, DC Drain Current (A) ID, Drain Current (A) VGS=10&15V 1.4 Transfert Characteristics 720 800 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=167.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 10000 1.2 1.0 0.9 0.8 0.7 1000 100 us limited by RDSon 1 ms 100 10 10 ms Single pulse TJ=150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Coss 10000 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 14 VDS=100V I D=335A TJ =25°C 12 V DS =250V 10 VDS=400V 8 6 4 2 0 0 200 APT website – http://www.advancedpower.com 400 600 800 1000 Gate Charge (nC) 5–6 APTM50UM13S-AlN Rev 0 July, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM50UM13S-AlN APTM50UM13S-AlN Delay Times vs Current Rise and Fall times vs Current 160 90 VDS=333V RG=0.8Ω TJ=125°C L=100µH 70 50 tf 80 tr 40 td(on) 30 VDS=333V RG=0.8Ω TJ=125°C L=100µH 120 td(off) t r and tf (ns) td(on) and t d(off) (ns) 110 10 0 60 140 220 300 380 460 I D, Drain Current (A) 60 540 140 220 300 380 460 ID, Drain Current (A) 540 Switching Energy vs Gate Resistance Switching Energy vs Current V DS=333V RG=0.8Ω T J=125°C L=100µH 10 8 Switching Energy (mJ) Eon Eoff 6 4 2 20 Eoff 16 12 Eon 8 4 0 60 140 220 300 380 460 I D, Drain Current (A) 0 540 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 300 ZCS 200 VDS=333V D=50% RG=0.8Ω TJ=125°C TC=75°C 100 0 50 100 ZVS Hard switching 150 200 250 300 I D, Drain Current (A) 2 4 6 8 10 12 14 Gate Resistance (Ohms) 400 Frequency (kHz) VDS=333V ID=335A T J=125°C L=100µH 24 350 Source to Drain Diode Forward Voltage 1000 TJ =150°C 100 TJ =25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50UM13S-AlN Rev 0 July, 2004 Switching Energy (mJ) 12