APTM120U10SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for MOSFET improved thermal performance S Q1 G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 116 86 464 ±30 120 3290 24 50 3200 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM120U10SAG Rev 3 November, 2013 Symbol VDSS APTM120U10SAG Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 1200V VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Min Typ 100 3 Max 1 120 5 ±400 Unit mA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 28.9 4.4 0.8 Max Unit nF 1100 VGS = 10V VBus = 600V ID = 116A 128 nC 716 20 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A RG =1.2Ω 17 ns 245 62 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω 5 mJ 4.6 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω 9.2 mJ 5.6 0.038 °C/W Max Unit 750 V µA Series diode ratings and characteristics VRRM IRM IF VF DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Test Conditions Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1000V Tc = 80°C IF = 240A IF = 480A IF = 240A IF = 240A VR = 667V di/dt = 800A/µs Typ 1000 Tj = 125°C 240 2 2.2 1.7 Tj = 25°C 280 Tj = 125°C Tj = 25°C Tj = 125°C 350 3.04 14.4 Junction to Case Thermal Resistance A 2.5 V ns µC 0.23 www.microsemi.com °C/W 2–7 APTM120U10SAG Rev 3 November, 2013 Symbol Characteristic APTM120U10SAG Parallel diode ratings and characteristics Symbol VRRM IRM IF VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR = 1200V DC Forward Current Tc = 80°C IF = 180A IF = 360A Diode Forward Voltage IF = 180A Tj = 125°C trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 180A VR = 800V di/dt = 600A/µs Min 1200 Typ Max 250 180 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C 350 Tj = 25°C 1.7 Tj = 125°C 8.6 Junction to Case Thermal Resistance Unit V µA A 3.5 V ns µC 0.32 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature To heatsink M6 Mounting torque For terminals M5 Package Weight Min 4000 -40 -40 -40 -40 3 2 Max 150 TJmax -25 125 100 5 3.5 300 Unit V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM120U10SAG Rev 3 November, 2013 SP6 Package outline (dimensions in mm) APTM120U10SAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.9 0.035 0.03 0.7 0.025 0.5 0.02 0.015 0.3 0.01 0.005 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 250 VGS=15, 10V 7V ID, Drain Current (A) 200 6V 160 5.5V 120 80 5V 40 VDS > ID (on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 150 100 TJ=25°C 50 TJ=125°C 4.5V 0 0 5 10 15 20 25 0 30 0 Normalized to VGS=10V @ 58A 1.2 VGS=10V 1.1 VGS=20V 1 0.9 40 80 120 160 200 3 4 5 6 7 DC Drain Current vs Case Temperature 120 RDS(on) vs Drain Current 1.3 0 2 VGS , Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1 240 100 80 60 40 20 0 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM120U10SAG Rev 3 November, 2013 ID, Drain Current (A) 240 Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 25 50 75 100 125 150 RDS (on), Drain to Source ON resistance (Normalized) ON resistance vs Temperature 2.5 VGS=10V I D=58A 2.0 1.5 1.0 0.5 25 Threshold Voltage vs Temperature 100 125 150 Maximum Safe Operating Area 1000 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 75 T J, Junction Temperature (°C) T J, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100µs limited by R DSon 100 1ms 10ms 10 0.6 Single pulse TJ =150°C TC=25°C 1 25 50 75 100 125 150 1 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 50 10000 Coss Crss 1000 100 0 10 20 30 40 10 100 1000 1200 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=116A VDS=240V 12 TJ =25°C 10 VDS=600V 8 VDS=960V 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 300 600 900 1200 1500 Gate Charge (nC) www.microsemi.com 5–7 APTM120U10SAG Rev 3 November, 2013 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM120U10SAG APTM120U10SAG Delay Times vs Current Rise and Fall times vs Current 100 300 200 td(off) VDS=800V R G =1.2Ω TJ=1 25 °C L=100µH 150 100 50 0 60 90 120 150 60 tr 40 20 td(on) 30 0 180 30 90 120 150 180 Switching Energy vs Gate Resistance Switching Energy vs Current 24 VDS=800V R G =1.2Ω TJ=1 25 °C L=100µH 12 Switching Energy (mJ) 16 Eon Eoff 8 4 0 30 60 90 120 150 VDS=800V I D=116A TJ=1 25 °C L=100µH 20 Eoff 16 12 Eon 8 4 180 0 ID, Drain Current (A) 2 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 175 150 ZVS 125 ZCS 100 75 VDS=800V D=50% R G =1.2Ω TJ=1 25 °C TC =75 °C 50 25 Hard switching TJ=150°C 100 TJ =25°C 10 1 0 40 60 80 100 0.2 0.4 0.6 0.8 ID, Drain Current (A) 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM120U10SAG Rev 3 November, 2013 Switching Energy (mJ) 60 ID, Drain Current (A) ID, Drain Current (A) Frequency (kHz) tf VDS=800V R G =1.2Ω TJ=1 25 °C L=100µH 80 t r and t f (ns) t d(on) and t d(off) (ns) 250 APTM120U10SAG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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