1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching speeds, is featured in a surface mount UB package with various polarities available. Microsemi also offers a variety of other switching/signal diodes. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of popular JEDEC registered 1N4148 number. • Very low capacitance. • Very fast switching speeds with minimal reverse recovery times. • Unidirectional as well as doubler, common anode and common cathode polarities are available. • JAN, JANTX, and JANTXV qualification is available per MIL-PRF-19500/116. (See part nomenclature for all available options.) • UB Package Also available in: RoHS compliant by design. UBC package (Ceramic Lid surface mount) 1N4148UBC APPLICATIONS / BENEFITS • • • • • • UB2 package High frequency data lines. Low-profile ceramic surface mount package (see package illustration). RS-232 & RS–422 interface networks. Ethernet 10 Base T. LAN. Computers. (2-Pin surface mount) 1N4148UB2 DO-35 package (axial-leaded) 1N4148-1 DO-213AA package (MELF surface mount) 1N4148UR-1 MAXIMUM RATINGS @ 25 ºC Parameters/Test Conditions Symbol TJ & TSTG RӨJA RӨJSP Junction and Storage Temperature (1) Thermal Resistance Junction-to-Ambient (1) Thermal Resistance Junction-to-Solder Pad Maximum Breakdown Voltage Working Peak Reverse Voltage (2) Average Rectified Current @ TA = 75 ºC Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms) V(BR) VRWM IO IFSM Value -65 to +200 325 120 100 Unit o C o C/W o C/W V 75 200 2 V mA A (pk) NOTES: 1. See Figure 2 for thermal impedance curves. 2. See Figure 1 for derating. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0281-2, Rev. 1 (121568) ©2012 Microsemi Corporation Page 1 of 5 1N4148UB MECHANICAL and PACKAGING • • • • • • CASE: Ceramic. TERMINALS: Gold plating over nickel under plate. MARKING: Part number, date code, manufacturer’s ID. TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: < 0.04 Grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N4148 UB CA Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial grade Polarity CA = Common Anode CC = Common Cathode D = Doubler Blank = Unidirectional JEDEC type number (see Electrical Characteristics table) Surface Mount package Common Anode Unidirectional Doubler SYMBOLS & DEFINITIONS Definition Symbol IR IO trr VF VR VRWM Common Cathode Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum value). Reverse Voltage: The reverse voltage dc value, no alternating component. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. T4-LDS-0281-2, Rev. 1 (121568) ©2012 Microsemi Corporation Page 2 of 5 1N4148UB ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted FORWARD FORWARD REVERSE FORWARD VOLTAGE VOLTAGE RECOVERY RECOVERY VF2 @ TIME VF1 @ TIME trr tfr IF=10mA IF=100mA (Note 1) (Note 2) V V ns ns 0.8 1.2 5 20 NOTE 1: IF = IR = 10 mA, RL = 100 Ohms + 5 %. NOTE 2: IF = 50 mA. T4-LDS-0281-2, Rev. 1 (121568) REVERSE CURRENT IR4 @ 75 V TA=150oC µA CAPACITANCE C (Note 3) CAPACITANCE C (Note 4) µA REVERSE CURRENT IR3 @ 20 V TA=150oC µA pF pF 0.5 35 75 4.0 2.8 REVERSE CURRENT IR1 @ 20 V REVERSE CURRENT IR2 @ 75 V nA 25 NOTE 3: VR = 0 V, f = 1 MHz, VSIG = 50 mV (pk to pk). NOTE 4: VR = 1.5V, f = 1 MHz, VSIG = 50 mV (pk to pk). ©2012 Microsemi Corporation Page 3 of 5 1N4148UB DC Operation Maximum Io Rating (mA) GRAPHS TA (ºC) (Ambient) Theta (°C/W) FIGURE 1 – Temperature – Current Derating Time (s) FIGURE 2 – Thermal Impedance T4-LDS-0281-2, Rev. 1 (121568) ©2012 Microsemi Corporation Page 4 of 5 1N4148UB PACKAGE DIMENSIONS Symbol BH BL BW CL CW LL1 LL2 inch Min .046 .115 .085 .022 .017 Dimensions millimeters Max Min Max .056 1.17 1.42 .128 2.92 3.25 .108 2.16 2.74 .128 3.25 .108 2.74 .038 0.56 0.97 .035 0.43 0.89 Note Symbol LS1 LS2 LW r r1 r2 inch Min .035 .071 .016 Dimensions millimeters Max Min Max .039 0.89 0.99 .079 1.80 2.01 .024 0.41 0.61 .008 0.20 .012 0.31 .022 .056 Note NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Ceramic package only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0281-2, Rev. 1 (121568) ©2012 Microsemi Corporation Page 5 of 5