1N6391 Qualified Levels: JAN, JANTX, JANTXV and JANS Schottky Barrier Rectifier Available on commercial versions Qualified per MIL-PRF-19500/553 DESCRIPTION This schottky barrier diode provides low forward voltage and offers military grade qualifications for high-reliability applications. This rugged DO-203AA rectifier is applicable for freewheeling diodes, rectification in high-frequency, low-voltage inverters, and for polarity protection. Important: For the latest information, visit our website http://www.microsemi.com. DO-203AA (DO-4) Package FEATURES • • • • • Internal solder bond construction. Hermetically sealed (welded). 600 Amps surge rating. JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/553. RoHS compliant devices available by adding “e3” suffix (commercial grade only). APPLICATIONS / BENEFITS • • • Metal and glass construction. Reverse energy tested. Fast recovery. MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Case Reverse Voltage, Repetitive Peak and (1) Working Peak Reverse Voltage Reverse Voltage, Nonrepetitive Peak (1) Reverse Voltage Forward Surge Current @ 8.3 ms half-sine wave Average Forward Current 50% duty cycle square wave (2) @ T C = +125 ºC (3) Average Rectified Output Current @ T C = +125 ºC Solder Pad Temperature @ 10 s Symbol T J and T STG R ӨJC V RRM and V RWM Value -55 to +175 2.0 45 Unit o C o C/W V V RSM VR I FSM I FM 54 45 600 25 V V A IO 22.5 260 A ºC A NOTES: 1. Full rated V RRM and V RWM with 50% duty cycle is applicable over the range of T C = –55 °C to +165 °C for I FM = 0. Full rated continuous V R (dc) is applicable over the temperature range of T C = –55 to +155 °C. When V R = 45 V and T C = +155 °C, then T J = 175 °C. 2. Average current with a 50 percent duty cycle square wave including reverse amplitude equal to the magnitude of full rated V RWM . Derate linearly at 0.625 A/°C for T C > +125 °C. 3. Average current with an applied half-sine wave peak voltage value equal to the magnitude of full rated V RWM . For temperature-current derating curves, see Figure 4. T4-LDS-0137, Rev. 2 (5/31/13) ©2013 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 6 1N6391 MECHANICAL and PACKAGING • • • • • • CASE: Industry standard DO-4, (DO-203AA), 7/16” hex, stud with 10-32 threads, welded, hermetically sealed metal and glass. TERMINALS: Tin-lead plated or RoHS compliant matte-tin plating (commercial grade only) on nickel. POLARITY: Cathode to stud. MOUNTING HARDWARE: Nut, flat steel washer and lock washer available upon request. WEIGHT: Approximately 7.5 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6391 e3 Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol f I FM I FSM IO V FM VR V RRM V RSM V RWM Frequency Forward Current: The current flowing from the external circuit into the anode terminal. Also see first page ratings and test conditions for I FM with 50% duty cycle square wave. Surge Peak Forward Current: The forward current including all nonrepetitive transient currents but excluding all repetitive transients (ref JESD282-B). Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Maximum Forward Voltage Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. Repetitive Peak Reverse Voltage: The peak reverse voltage including all repetitive transient voltages but excluding all non-repetitive transient voltages. Non-Repetitive Peak Inverse Voltage: The peak reverse voltage including all non-repetitive transient voltages but excluding all repetitive transient voltages. Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes known historically as PIV. T4-LDS-0137, Rev. 2 (5/31/13) ©2013 Microsemi Corporation Page 2 of 6 1N6391 ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Symbol Forward Voltage I FM = 50 A, T C = 25 °C * I FM = 5 A, T C = 25 °C * V FM Reverse Current Leakage V RM = 45 V, T J = 25 °C V RM = 45 V, T J = 175 °C * V RM = 45 V, T J = 125 °C * V RM = 45 V, T C = -55 °C * I RM Junction Capacitance V R = 5 V, f = 1 MHz, 100 KHz ≤ f ≤ 1 MHz CJ Min. Max. 0.68 0.50 1.5 220 40 1.5 2000 Typ. Unit V mA pF *Pulse test: pulse width 300 µsec, duty cycle 2% T4-LDS-0137, Rev. 2 (5/31/13) ©2013 Microsemi Corporation Page 3 of 6 1N6391 Instantaneous Forward Current - Amperes GRAPHS Instantaneous Forward Voltage – Volts Typical Reverse Current - mA FIGURE 1 Typical Forward Characteristics Reverse Voltage – Volts FIGURE 2 Typical Reverse Characteristics T4-LDS-0137, Rev. 2 (5/31/13) ©2013 Microsemi Corporation Page 4 of 6 1N6391 Junction Capacitance - pF GRAPHS Reverse Voltage – Volts Sinewave Operation Maximum IO Rating (A) FIGURE 3 Typical Junction Capacitance T C Temp (ºC) FIGURE 4 Temperature – Current Derating Curve (Derate design curve constrained by the maximum rated junction temperature (TJ ≤ 175C) and current rating specified.) T4-LDS-0137, Rev. 2 (5/31/13) ©2013 Microsemi Corporation Page 5 of 6 1N6391 PACKAGE DIMENSIONS Ltr C C1 CD CH HF HT1 HT2 OAH SD SL SU UD ΦT Dimensions Inch Millimeters Min Max Min Max .250 6.35 0.018 0.65 0.46 1.65 0.265 0.424 6.73 10.77 0.300 0.405 7.62 10.29 0.403 0.437 10.24 11.1 0.075 0.175 1.91 4.45 0.060 1.53 0.600 0.800 15.24 20.32 Notes 5 5 6 6 7 7 2 0.422 0.163 0.060 0.453 0.078 0.189 0.095 10.72 4.14 1.52 11.51 1.98 4.80 2.41 8 NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. See “mechanical and packaging” for the polarity of the terminals. 3. Threads shall be 10–32 UNF–2A in accordance with FED–STD–H28. Maximum pitch diameter (SD) of plated threads shall be basic pitch diameter 0.1697 inch (4.31 mm). 4. Device shall not be damaged by a torque of 15 inch–pounds applied to a 10–32 UNF–2B nut assembled on thread. 5. The angular orientation and peripheral configuration of terminal 1 is undefined, however, the major surfaces over dimension C and C1 shall be flat. 6. Dimension CD cannot exceed dimension HF. 7. A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating plane 0.403 inch (10.24 mm). 8. Length of incomplete or undercut threads UD. 9. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0137, Rev. 2 (5/31/13) ©2013 Microsemi Corporation Page 6 of 6