PESD18VF1BL Ultra low capacitance bidirectional ESD protection diode Rev. 1— 2 September 2013 Product data sheet 1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits • • • • Ultra low diode capacitance Cd = 0.35 pF High reverse standoff voltage VRWM = 18 V Very small voltage dependency of the capacitance ESD protection up to ±10 kV according to IEC 61000-4-2, level 4 3. Applications • NFC antenna protection • Protection of high-speed data lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Cd diode capacitance f = 1 MHz; VR = 0 V 0.28 0.35 0.5 pF VRWM reverse standoff voltage - V - 18 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) Simplified outline 1 2 Graphic symbol 1 2 sym045 Transparent top view DFN1006-2 (SOD882) PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 6. Ordering information Table 3. Ordering information Type number Package PESD18VF1BL Name Description Version DFN1006-2 leadless ultra small plastic package; 2 terminals SOD882 7. Marking Table 4. Marking codes Type number Marking code PESD18VF1BL WM 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions IPPM peak pulse current tp = 8/20 µs; IEC 61000-4-5; IEC 61643-321 Tj junction temperature Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Min Max Unit - 1 A - 150 °C ESD maximum ratings VESD electrostatic discharge voltage IEC 61000-4-2; contact discharge [1][2] - 10 kV IEC 61000-4-2; air discharge [1][2] - 15 kV MIL-STD-883; human body model; HBM [1] - 10 kV machine model; MM [1] - 400 V [1] Measured from pin 1 to pin 2. [2] Device stressed with ten non-repetitive ESD pulses. PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2013 © NXP B.V. 2013. All rights reserved. 2 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 μs IPP (%) 90 % 80 e−t 50 % IPP; 20 μs 40 10 % 0 0 10 20 30 t tr = 0.7 ns to 1 ns 40 t (μs) 30 ns 60 ns Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 Fig 2. ESD pulse waveform according to IEC 61000-4-2 9. Characteristics Table 6. Characteristics Symbol Parameter VRWM reverse standoff voltage IRM reverse leakage current VR = 18 V VCL clamping voltage IPP = 1 A; tp = 8/20 µs; IEC 61000-4-5; IEC 61643-321 VBR breakdown voltage IR = 10 mA Cd diode capacitance f = 1 MHz; VR = 0 V Rdyn dynamic resistance Conditions IR = 10 A [1] [2] Min Typ Max Unit - - 18 V - 1 30 nA - - 17 V 19 22 24 V 0.28 0.35 0.5 pF - 0.8 - Ω [1] Measured from pin 1 to pin 2. [2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.1-2008. PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2013 © NXP B.V. 2013. All rights reserved. 3 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode ESD TESTER Rd 450 Ω 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax 10x ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 network Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 70 -10 -10 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig 3. ESD clamping test setup and waveforms aaa-008158 100 VCL (V) VCL (V) 60 -20 20 -60 -20 -50 Fig 4. aaa-008159 20 0 50 100 150 200 250 t (ns) 300 Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PESD18VF1BL Product data sheet -100 -50 Fig 5. 0 50 100 150 200 250 t (ns) 300 Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2013 © NXP B.V. 2013. All rights reserved. 4 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode IPPM IPP aaa-008157 0.4 Cd (pF) 0.35 0.30 IR IRM -VCL -VBR -VRWM -IRM -IR VRWM VBR VCL 0.25 - 0.20 -20 -10 0 10 + -IPP 20 VR (V) -IPPM 006aab325 f = 1 MHz; VR = 0 V; Tamb = 25 °C Fig 6. Diode capacitance as a function of reverse voltage; typical values Fig 7. V-I characteristics for a bidirectional ESD protection diode aaa-009078 25 I (A) 20 15 10 5 0 0 10 20 30 40 VCL (V) tp = 100 ns; Transmission Line Pulse (TLP) Fig 8. Dynamic resistance PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2013 © NXP B.V. 2013. All rights reserved. 5 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 10. Application information The device is designed for the protection of one bidirectional data line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both positive and negative with respect to ground. line to be protected ESD protection diode GND aaa-002737 Fig 9. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. Minimize the path length between the device and the protected line. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2013 © NXP B.V. 2013. All rights reserved. 6 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 11. Package outline 0.50 0.46 0.62 0.55 2 0.30 0.22 0.65 0.30 0.22 1.02 0.95 1 0.55 0.47 cathode marking on top side (if applicable) Dimensions in mm 03-04-17 Fig 10. Package outline DFN1006-2 (SOD882) 12. Soldering 1.3 0.7 R0.05 (8×) solder lands 0.6 0.7 0.8 (2×) (2×) (2×) 0.9 solder resist solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) 0.5 (2×) sod882_fr Fig 11. Reflow soldering footprint for DFN1006-2 (SOD882) PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2013 © NXP B.V. 2013. All rights reserved. 7 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD18VF1BL v.1 20130902 Product data sheet - - PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2013 © NXP B.V. 2013. All rights reserved. 8 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 14. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2013 © NXP B.V. 2013. All rights reserved. 9 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 15. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] PESD18VF1BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 September 2013 © NXP B.V. 2013. All rights reserved. 10 of 11 PESD18VF1BL NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 16. Contents 1 2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 General description . . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Application information. . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 September 2013 Document identifier: PESD18VF1BL