QTP# 144504:36 MEG SYNCHRONOUS NOBL FAMILY,LL65P-25ODR TECHNOLOGY, UMC FAB 12A

Document No.001-97372 Rev. *A
ECN #4798763
Cypress Semiconductor
Product Qualification Report
QTP# 144504 VERSION*A
June 2015
36 Meg Standard Synchronous and NoBL Family
LL65P-25ODR Technology, UMC Fab 12A
CY7C1440KV25
CY7C1440KV33
CY7C1440KVE33
CY7C1441KV25
CY7C1441KV33
CY7C1441KVE33
CY7C1442KV33
CY7C1443KV33
CY7C1444KV33
CY7C1445KV33
CY7C1460KV25
CY7C1460KV33
CY7C1460KVE25
CY7C1460KVE33
CY7C1461KV33
CY7C1462KV25
CY7C1462KV33
CY7C1462KVE25
CY7C1462KVE33
CY7C1463KV33
36-Mbit (1M x 36) Pipelined Sync SRAM
36-Mbit (1M x 36) Pipelined Sync SRAM (with ECC)
36-Mbit (1M x 36) Flow-through SRAM
36-Mbit (1M x 36) Flow-through SRAM (with ECC)
36-Mbit (2M x 18) Pipelined Sync SRAM
36-Mbit (2M x 18) Flow-through SRAM
36-Mbit (1M x 36) Pipelined DCD Sync SRAM
36-Mbit (2M x 18) Pipelined DCD Sync SRAM
36-Mbit (1M x 36) Pipelined SRAM with NoBL (TM) Architecture
36-Mbit (1M x 36) Pipelined SRAM with NoBL (TM) Architecture (with ECC)
36-Mbit (1M x 36) Flow-through SRAM with NoBL (TM) Architecture
36-Mbit (2M x 18) Pipelined SRAM with NoBL (TM) Architecture
36-Mbit (2M x 18) Pipelined SRAM with NoBL (TM) Architecture (with ECC)
36-Mbit (2M x 18) Flow-through SRAM with NoBL (TM) Architecture
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda (JYF)
Reliability Engineer
Reviewed By:
Zhaomin Ji (ZIJ)
Reliability Manager
Approved By:
Don Darling (DCDA)
Reliability Director
Company Confidential
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Page 1 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
QUALIFICATION HISTORY
QTP
Number
Description of Qualification Purpose
Date
Comp
091706
Qualification of 65nm (LL65) Technology at UMC Fab 12A and New Device
CY7C1553K Base Die Product Family
Aug 2009
144504
Qualification of 36 Meg Standard Synchronous and NoBL Family , LL65P-25ODR
Technology at UMC Fab 12A
April 2015
Company Confidential
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Page 2 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
PRODUCT DESCRIPTION (for qualification)
Qualify 36 Meg Standard Synchronous and NoBL Family , LL65P-25ODR
Qualification Purpose:
Technology at UMC Fab 12A
Device Description:
CY7C1440KV25/ CY7C1440KV33/ CY7C1440KVE33/
CY7C1441KV25/CY7C1441KV33/ CY7C1441KVE33/
CY7C1442KV33/ CY7C1443KV33/CY7C1444KV33/
CY7C1445KV33/ CY7C1460KV25/ CY7C1460KV33/
CY7C1460KVE25/ CY7C1460KVE33/ CY7C1461KV33/
CY7C1462KV25/CY7C1462KV33/ CY7C1462KVE25/
CY7C1462KVE33/ CY7C1463KV33
LL65 36 Meg Sync/NoBL SRAM
Cypress Division:
Cypress Semiconductor Corporation –Memory Product Division
Marketing Part #:
TECHNOLOGY/FAB PROCESS DESCRIPTION – LL65P-18R
Number of Metal Layers:
5+RDL
Metal
Metal 1: Cu 0.18um
Composition: Metal 2: Cu 0.22um
Metal 3: Cu 0.22um
Metal 4: Cu 0.36um
Metal 5: Cu 1.25um
Metal 6 (RDL): Al 1.2um
Passivation Type and Materials:
0.4um Oxide / 0.5um Nitride
Number of Transistors in Device
~600M
Number of Logic Gates in Device
~300M
Generic Process Technology/Design Rule (µ-drawn):
65nm
Gate Oxide Material/Thickness (MOS):
19.5A
Name/Location of Die Fab (prime) Facility:
UMC Fab 12
Die Fab Line ID/Wafer Process ID:
LLL65P-25ODR
PACKAGE AVAILABILITY
PACKAGE
WIRE MATERIAL
ASSEMBLY FACILITY SITE
QTP NUMBER
165 FBGA
CuPd
CML-RA
QTP# 144603
100L TQFP
CuPd
CML-RA
QTP# 150503
Note: Package Qualification details upon request
Company Confidential
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Page 3 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
BB165/BW165
165-Fine Ball Grid Array (15x17x1.4mm)
GR9810/Henkel
UL-94 V0
Oxygen Rating Index:
54% (typical) / 28 (min. value)
Substrate Material:
BT Resin
Lead Finish, Composition / Thickness:
SAC405
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
Saw
Die Attach Supplier:
Henkel
Die Attach Material:
ATB125-US1 Die Attach Film
Bond Diagram Designation:
001-95407/ 001-69504
Wire Bond Method:
Thermosonic
Wire Material/Size:
CuPd, 0.8 mil
Thermal Resistance Theta JA °C/W:
14.24°C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
11-21099
Name/Location of Assembly (prime) facility:
CML-RA
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA
Note: Please contact a Cypress Representative for other packages availability
Company Confidential
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Page 4 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
AZ100
100L-Thin Quad Flat Package (14x20x1.4mm)
G700SY/Sumitomo
UL-94 V0
Oxygen Rating Index:
54% (typical) / 28 (min. value)
Leadframe Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
Saw
Die Attach Supplier:
Henkel
Die Attach Material:
QMI 509
Bond Diagram Designation:
001-69322/001-95403
Wire Bond Method:
Thermosonic
Wire Material/Size:
CuPd, 0.8 mil
Thermal Resistance Theta JA °C/W:
35.36°C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
11-21099
Name/Location of Assembly (prime) facility:
CML-RA
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA
Company Confidential
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Page 5 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
Acoustic Microscopy
Age Bond Strength
Test Condition
(Temp/Bias)
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260C Reflow)
200C, 4HRS
MIL-STD-883, Method 883-2011
Dynamic Latch-up
JESD78
Electrostatic Discharge
Charge Device Model (ESD-CDM)
Electrostatic Discharge
Human Body Model (ESD-HBM)
Electrostatic Discharge
Machine Model (ESD-MM)
500V/750V/1,000V/1,250V/1,500V/2,0000V
JESD22-C101
1,100V/2,200V/3,300V/4,000V/5,000V/6,000V
JESD22-A114
High Accelerated Saturation Test
(HAST)
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life
Latent Failure Rate
High Temperature Steady State Life
High Temperature Storage
Low Temperature Operating Life
Pressure Cooker
Pre/Post LFR AC/DC Char
Soft Error (Alpha Particle)
Static Latch-up
Temperature Cycle
Temperature Humidity Bias Test
(THB)
200V, JESD22-A115
JEDEC STD 22-A110: 130°C, 85%RH, 2.25V
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260C Reflow)
Dynamic Operating Condition, Boost Regulated at Core
1.45V, External 2.05V, 125°C
Dynamic Operating Condition, 2.5V, 150°C
JESD22-A108
Dynamic Operating Condition, Boost Regulated at Core
1.45V, External 2.05V, 125°C /150°C
Dynamic Operating Condition, 2.5V, 150°C
JESD22-A108
Static Operating Condition, Vcc Max= 2.25V, 150°C
JESD22-A108
JESD22-A103:150°C No bias
Dynamic Operating Condition, Vcc = 2.25V, -30°C
JESD22-A108
JESD22-A102: 121C, 100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260C Reflow)
AC/DC Critical Parameter Char at
LFR 0hr,80hrs, 500hrs & 1000hrs
JESD89
85°C ,  140mA/85°C ,  200mA
125°C ,  140mA/125°C ,  240mA
JESD78
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260C Reflow)
JESD22-A101: 85°C/ 85% RH , 2.25V
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260C Reflow)
Company Confidential
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Page 6 of 13
Result
P/F
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
Document No.001-97372 Rev. *A
ECN # 4798763
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure
Rate
High Temperature Operating Life
Early Failure Rate1
1,499 Devices
0
N/A
N/A
0 PPM
High Temperature Operating Life,2
Long Term Failure Rate (150°C)
147,000 DHRs
0
0.7
170
High Temperature Operating Life2
Long Term Failure Rate (125°C)
356,000 DHRs
0
0.7
55
21 FIT
1
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate..
3
Thermal Acceleration Factor is calculated from the Arrhenius equation
2
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature
of the device at use conditions.
1
Early Failure Rate was computed from QTP# 144504 data.
2
Long Term Failure Rate was computed from QTP# 091706 and QTP# 144504 Data.
Company Confidential
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Page 7 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
Reliability Test Data
QTP #:091706
Device
Fab Lot #
Assy Lot #
Ass Loc
Duration
Samp
Rej Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY7C1514KV18 (7C1553K)
8842022
610851583
TAIWN-G
COMP
15
0
CY7C1514KV18 (7C1553K)
8844020
610854240
TAIWN-G
COMP
15
0
CY7C1514KV18 (7C1553K)
8844022
610906896
TAIWN-G
COMP
15
0
STRESS: AGE BOND STRENGTH
CY7C1514KV18 (7C1553K)
8842022
610851583
TAIWN-G
COMP
5
0
CY7C1514KV18 (7C1553K)
8844020
610854240
TAIWN-G
COMP
5
0
CY7C1514KV18 (7C1553K)
8844022
610906896
TAIWN-G
COMP
5
0
610417278
CML-R
COMP
3
0
STRESS: DYNAMIC LATCH-UP
CY7C1470V33 (7C1470A)
4321389
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY7C1514KV18 (7C1553K)
8842022
610852338
TAIWN-G
COMP
9
0
CY7C1514KV18 (7C1553K)
8844020
610854240
TAIWN-G
COMP
9
0
CY7C1514KV18 (7C1553K)
8844022
610906896
TAIWN-G
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 2,200V
CY7C1514KV18 (7C1553K)
8842022
610852338
TAIWN-G
COMP
8
0
CY7C1514KV18 (7C1553K)
8844020
610854240
TAIWN-G
COMP
8
0
CY7C1514KV18 (7C1553K)
8844022
610906896
TAIWN-G
COMP
8
0
CY7C1514KV18 (7C1553K)
8844021
610908348
TAIWN-G
COMP
8
0
610852338
TAIWN-G
COMP
5
0
STRESS: ESD-MACHINE MODEL, 200V
CY7C1514KV18 (7C1553K)
8842022
STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 2.25V, PRE COND 192 HR 30C/60%RH, MSL3
CY7C1514KV18 (7C1553K)
8844020
610854240
TAIWN-G
128
78
0
CY7C1514KV18 (7C1553K)
8844022
610906896
TAIWN-G
128
77
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, BOOST REGULATED AT CORE 1.45V,
EXTERNAL 2.05V
CY7C15631KV18 (7C1553K)
8908001
610920385
TAIWN-G
96
2367
0
CY7C15631KV18 (7C1553K)
8912000
610920386
TAIWN-G
96
2217
0
CY7C15631KV18 (7C1553K)
8910015
610920548
TAIWN-G
96
1321
0
Company Confidential
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Page 8 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
Reliability Test Data
QTP #:091706
Device
Fab Lot #
Assy Lot #
Ass Loc
Duration
Samp
Rej Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, BOOST REGULATED AT
CORE 1.45V, EXTERNAL 2.05V
CY7C1514KV18 (7C1553K)
8844021
610908348
TAIWN-G
500
178
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, BOOST REGULATED AT
CORE 1.45V, EXTERNAL 2.05V
CY7C1514KV18 (7C1553K)
8844020
610854240
TAIWN-G
1000
178
0
CY7C1514KV18 (7C1553K)
8844022
610906896
TAIWN-G
1000
178
0
TAIWN-G
336
77
0
TAIWN-G
1000
70
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 2.25V, Vcc Max
CY7C1514KV18 (7C1553K)
8844020
610854240
STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C
CY7C1514KV18 (7C1553K)
8844020
610851583
STRESS: LOW TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, -30C, 2.25V Vcc
CY7C1514KV18 (7C1553K)
8842022
610852338
TAIWN-G
500
45
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3
CY7C1514KV18 (7C1553K)
8842022
610851583
TAIWN-G
168
76
0
CY7C1514KV18 (7C1553K)
8844020
610854240
TAIWN-G
168
78
0
CY7C1514KV18 (7C1553K)
8844022
610906896
TAIWN-G
168
77
0
STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR
CY7C1514KV18 (7C1553K)
8844020
610854240
TAIWN-G
COMP
10
0
STRESS: STATIC LATCH-UP TESTING, 125C, 3.42V, +/-240mA
CY7C1514KV18 (7C1553K)
8844020
610854680
TAIWN-G
COMP
9
0
CY7C1514KV18 (7C1553K)
8844022
610906896
TAIWN-G
COMP
9
0
CY7C1514KV18 (7C1553K)
8844021
610908348
TAIWN-G
COMP
9
0
CY7C15631KV18 (7C1553K)
8911000
610922436
TAIWN-G
COMP
9
0
STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CY7C1514KV18 (7C1553K)
8842022
610851583
TAIWN-G
1000
77
0
CY7C1514KV18 (7C1553K)
8844020
610854240
TAIWN-G
1000
78
0
CY7C1514KV18 (7C1553K)
8844022
610906896
TAIWN-G
1000
77
0
STRESS: TEMPERATURE HUMIDITY TEST, 85C, 85%RH, 2.25V, PRE COND 192 HR 30C/60%RH, MSL3
CY7C1514KV18 (7C1553K)
8842022
610851583
TAIWN-G
1000
77
0
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Page 9 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
Reliability Test Data
QTP #:091706
Device
Fab Lot #
Assy Lot #
Ass Loc
Duration
Samp
Rej Failure Mechanism
STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, @ 85C, Vcc Nom
CY7C1514KV18 (7C1553K)
8842022
610851583
TAIWN-G
COMP
3
610851583
TAIWN-G
COMP
1WF
0
STRESS: X-SECTION/STEM XY AUDIT
CY7C1514KV18 (7C1553K)
8842022
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Page 10 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
Reliability Test Data
QTP #:144504
Device
Fab Lot #
Assy Lot #
Ass Loc
Duration
Samp
Rej
611446421
CML-RA
COMP
15
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
500
9
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
750
3
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
1000
3
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
1250
3
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
1500
3
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
1750
3
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
2000
3
0
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY7C1460KVE25 (7CP14602K) 9441004
STRESS: ESD-CHARGE DEVICE MODEL
STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
1100
3
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
2200
8
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
3300
3
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
4000
3
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
5000
3
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
6000
3
0
611446421
CML-RA
COMP
5
0
1499
0
STRESS: ESD-MACHINE MODEL, 200V
CY7C1460KVE25 (7CP14602K) 9441004
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE , 150C, 2.5V
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
48
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE –REG-ON, 150C, 2.5V
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
48
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.5V
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
80
116
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
500
116
0
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Page 11 of 13
Document No.001-97372 Rev. *A
ECN # 4798763
Reliability Test Data
QTP #:144504
Device
Fab Lot #
Assy Lot #
Ass Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: PRE/POST LFR CRITICAL PARAMETERS
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
0
10+2
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
80
10+2
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
500
10+2
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
168
80
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
288
80
0
CML-RA
COMP
6
0
COMP
3
0
COMP
3
0
STRESS: STATIC LATCH-UP TESTING, 85C, 5.4V, +/-140mA
CY7C1460KVE25 (7CP14602K) 9441004
611446421
STRESS: STATIC LATCH-UP TESTING, 85C, 5.94V, +/-200mA
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, +/-140mA
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
500
79
0
CY7C1460KVE25 (7CP14602K) 9441004
611446421
CML-RA
1000
79
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 12 of 13
Document No.001-97372 Rev. *A
ECN #4798763
Document History Page
Document Title:
QTP# 144504: 36 MEG SYNCHRONOUS NOBL FAMILY,LL65P-25ODR TECHNOLOGY, UMC
FAB 12A
001-97372
Document Number:
Rev. ECN
Orig. of
No.
Change
**
4744116 JYF
Description of Change
*A
Changed QTP title from “36 Meg Synchronous NoBL Family LL65P25ODR Technology, UMC Fab 12A” to “36 Meg Standard Synchronous
and NoBL Family LL65P-25ODR Technology, UMC Fab 12A” in QTP
title page (page 1); Aligned qualification purpose in pages 2 & 3.
4798763 JYF
Initial spec release.
Distribution: WEB
Posting:
None
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 13
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