Document No.001-76071 Rev. *E ECN # 4678942 Cypress Semiconductor Product Qualification Report QTP# 102402 VERSION*E March 2015 USB 3.0 Device Family 65nm (LL65H-25ODR) Technology, UMC Fab 12A CYWB0163BB West Bridge™ Bay ™ USB And Mass Storage Controller CYWB0164BB West Bridge™ Benicia™ USB And Mass Storage Peripheral CYWB0263BB Controller CYUSB3021 CYUSB3023 SD3 ™ USB And Mass Storage Peripheral Controller CYUSB3025 CYUSB3014 EZ-USB ™ FX3 Superspeed USB Controller CYUSB3011 EZ-USB ™ FX3 Superspeed USB Controller CYUSB3012 EZ-USB ™ FX3 Superspeed USB Controller CYUSB3013 EZ-USB ™ FX3 Superspeed USB Controller CYUSB3035 CYUSB3031 EZ-USB™ FX3S Superspeed USB Controller CYUSB3033 CYUSB2025 SD2 ™ USB and Mass Storage Peripheral Controller CYUSB2024 FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No.001-76071 Rev. *E ECN # 4678942 QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 091706 Qualification of 65nm (LL65) Technology at UMC Fab 12A and New Device CY7C1553K Base Die Product Family Aug 2009 102402 Qualification of USB3.0 (CYUSB3014, CYUSB3021, CYWB0163BB, CYWB0263BB) Device in UMC LL65H-25ODR Dec 2011 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Document No.001-76071 Rev. *E ECN # 4678942 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualification of USB3.0 Device in UMC LL65H-25ODR Marketing Part #: CYUSB3014, CYUSB3021, CYWB0163BB, CYWB0263BB, CYUSB3011, CYUSB3012, CYUSB3013, CYWB0164BB and CYUSB3035 , CYUSB3031, CYUSB3033, CYUSB3025, CYUSB2025, CYUSB2024, CYUSB3023 Peripheral Controller for generic applications and handhelds in 121-Ball FBGA and 131 WLCSP Device Description: Cypress Division: Cypress Semiconductor Corporation –Data Communication Division TECHNOLOGY/FAB PROCESS DESCRIPTION – LL65H-25ODR Number of Metal Layers: 6 Metal Composition: Metal 1: Cu 0.18um, (0.09/0.09um) Metal 2: Cu 0.22um Metal 3: Cu 0.22um Metal 4: Cu 0.22um Metal 5: Cu 0.36um Metal 6: Cu 1.25um Passivation Type and Materials: 0.4um Oxide / 0.5um Nitride Generic Process Technology/Design Rule (-drawn): CMOS, 65nm Gate Oxide Material/Thickness (MOS): 19.5A EOT Nitride Oxide Name/Location of Die Fab (prime) Facility: UMC Fab 12 Die Fab Line ID/Wafer Process ID: LL65H-25ODR PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 121-Ball FBGA CML-RA, G-TAIWAN 131-Ball WLCSP AMKOR-AU, DT-PHIL Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 13 Document No.001-76071 Rev. *E ECN # 4678942 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: BK121 121-Ball Thin Ball Grid Array (FBGA) KE-G2270 / Kyocera UL94, V-0 Oxygen Rating Index: N/A Substrate Material: BT resin Lead Finish, Composition / Thickness: SAC105 Die Backside Preparation Method/Metallization: Grinding Die Separation Method: Saw Die Attach Supplier: Henkel Die Attach Material: QMI-506 Die Attach Method: Epoxy Bond Diagram Designation: 001-65074 Wire Bond Method: Thermosonic Wire Material/Size: Au, 0.8 mil Thermal Resistance Theta JA °C/W: 33°C/W Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: CML-RA ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA, CML-R, KYEC-TAIWAN Note: Please contact a Cypress Representative for other packages availability Company Confidential A printed copy of this document is considered uncontrolled. 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Page 4 of 13 Document No.001-76071 Rev. *E ECN # 4678942 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Boost Regulated at Core 1.45V, External 2.05V, 125C Dynamic Operating Condition, 125°C, 3.795C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Boost Regulated at Core 1.45V, External 2.05V, 125C/150C Dynamic Operating Condition, 125°C, 3.795C P Pre/Post LFR AC/DC Char AC/DC Critical Parameter Char at LFR 80hrs, 500hrs & 1000hrs P High Temperature Steady State Life Static Operating Condition, Vcc Max= 2.25V, 150C P Low Temperature Operating Life Dynamic Operating Condition, Vcc = 2.25V / 4.29V, -30C P High Accelerated Saturation Test (HAST) 130C, 2.25V / 3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C P Temperature Humidity Bias Test (THB) 85C, 2.25V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C 121C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity MSL 3 P Temperature Cycle Pressure Cooker P P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C High Temperature Storage 150C 5C, no bias Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114E Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C Electrostatic Discharge Machine Model (ESD-MM) 200V, JESD22-A115-A P Soft Error (Alpha Particle) JESD89A P Soft Error (Neutron/Proton) JESD89A P Current Density Meets the Technology Device Level Reliability Specifications P Age Bond Strength 200C, 4HRS MIL-STD-883, Method 883-2011 P Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity MSL 3 P P P P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Constructional Analysis Criteria: Meet external and internal characteristics of Cypress package P Dynamic Latchup In accordance with JESD78. P Static Latchup 125C, 200mA, + 140mA, accordance with JESD78. P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 Document No.001-76071 Rev. *E ECN # 4678942 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 10,092 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate (150C) 89,000 DHRs 0 0.7 170 High Temperature Operating Life1,2 Long Term Failure Rate (125C) 891,500 DHRs 0 0.7 55 High Temperature Operating Life Early Failure Rate 14 FIT 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 13 Document No.001-76071 Rev. *E ECN # 4678942 Reliability Test Data QTP #: 091706 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G COMP 15 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 15 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 15 0 STRESS: AGE BOND STRENGTH CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G COMP 5 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 5 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 5 0 610417278 CML-R COMP 3 0 STRESS: DYNAMIC LATCH-UP CY7C1470V33 (7C1470A) 4321389 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY7C1514KV18 (7C1553K) 8842022 610852338 TAIWN-G COMP 8 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 8 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 8 0 CY7C1514KV18 (7C1553K) 8844021 610908348 TAIWN-G COMP 8 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C1514KV18 (7C1553K) 8842022 610852338 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 9 0 610852338 TAIWN-G COMP 5 0 STRESS: ESD-MACHINE MODEL, 200V CY7C1514KV18 (7C1553K) 8842022 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 2.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 128 78 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 128 77 0 1000 70 0 336 77 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY7C1514KV18 (7C1553K) 8844020 610851583 TAIWN-G STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 2.25V, Vcc Max CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 13 Document No.001-76071 Rev. *E ECN # 4678942 Reliability Test Data QTP #: 091706 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C15631KV18 (7C1553K) 8908001 610920385 TAIWN-G 96 2367 0 CY7C15631KV18 (7C1553K) 8912000 610920386 TAIWN-G 96 2217 0 CY7C15631KV18 (7C1553K) 8910015 610920548 TAIWN-G 96 1321 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C1514KV18 (7C1553K) 8844021 610908348 TAIWN-G 500 178 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 1000 178 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 1000 178 0 STRESS: LOW TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, -30C, 2.25V Vcc CY7C1514KV18 (7C1553K) 8842022 610852338 TAIWN-G 500 45 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G 168 76 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 168 78 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 168 77 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 10 0 STRESS: STATIC LATCH-UP TESTING, 125C, 3.42V, +/-240mA CY7C1514KV18 (7C1553K) 8844020 610854680 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844021 610908348 TAIWN-G COMP 9 0 CY7C15631KV18 (7C1553K) 8911000 610922436 TAIWN-G COMP 9 0 STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G 1000 77 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 1000 78 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 1000 77 0 STRESS: STRESS: TEMPRATURE HUMIDITY TEST, 85C, 85%RH, 2.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No.001-76071 Rev. *E ECN # 4678942 Reliability Test Data QTP #: 091706 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, @ 85C, Vcc Nom CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G COMP 3 610851583 TAIWN-G COMP 1WF 0 STRESS: X-SECTION/STEM XY AUDIT CY7C1514KV18 (7C1553K) 8842022 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No.001-76071 Rev. *E ECN # 4678942 Reliability Test Data QTP #: 102402 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 15 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA COMP 14 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN COMP 15 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA COMP 15 0 STRESS: AGE BOND STRENGTH CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 3 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA COMP 3 0 STRESS: CONSTRUCTIONAL ANALYSIS CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 5 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA COMP 5 0 611140448 CML-RA COMP 3 0 STRESS: DYNAMIC LATCH-UP CYUSB3014 (7C07201AO) 8117021 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CYUSB3014 (7C07201AO) 8117021 611140448 CML-RA COMP 8 0 CYUSB3014 (7C07201AO) 8125000 611150816 CML-RA COMP 8 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CYUSB3014 (7C07201AO) 8117021 611140448 CML-RA COMP 9 0 CYUSB3014 (7C07201AO) 8125000 611150816 CML-RA COMP 9 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 128 78 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 128 81 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 256 81 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 500 82 0 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 1000 82 0 STRESS: LOW TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, -30C, 4.29V Vcc CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 500 78 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No.001-76071 Rev. *E ECN # 4678942 Reliability Test Data QTP #: 102402 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.795V CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 96 3195 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 96 3370 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 96 2519 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA 96 1008 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.795V CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 500 176 0 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 1000 175 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 168 180 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 1000 180 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 168 180 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 1000 180 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 168 82 0 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 288 82 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA 168 82 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA 288 82 0 STRESS: STATIC LATCH-UP TESTING, 125C, 1.88V, 5.4V, 9V, +/-140mA CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 6 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA COMP 6 0 CYUSB3014 (7C07201AO) 8117021 611140448 CML-RA COMP 6 0 CYUSB3014 (7C07201AO) 8125000 611150816 CML-RA COMP 6 0 STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 500 81 0 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 1000 81 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 500 77 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 1000 77 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 500 80 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 1000 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No.001-76071 Rev. *E ECN # 4678942 Reliability Test Data QTP #: 102402 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS : SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, @ 85C, Vcc Nom CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 611119246 CML-RA COMP 2 0 STRESS: X-SECTION/STEM XY AUDIT CYUSB3014 (7C07201AO) 8103023 1 WFR 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No.001-76071 Rev. *E ECN # 4678942 Document History Page Document Title: Document Number: Rev. ECN No. ** 3524125 *A 3685191 QTP 102402: USB 3.0 DEVICE FAMILY, 65NM (LL65H-25ODR) TECHNOLOGY, UMC FAB 12A 001-76071 Orig. of Change NSR NSR *B 3881196 NSR *C 4050724 NSR *D 4272228 HSTO *E 4678942 HSTO Description of Change Initial spec release. Added CYUSB3011, CYUSB3012 and CYUSB3013 part numbers in front page in reference to memo DEPM-145. Added G-Taiwan for the assembly site for 121 BGA package. Removed the reference Cypress Spec in the Reliability Tests Performed table to show only the reference Industry standards. Added CYWB0164BB and CYUSB3035 part numbers in front page in reference to memo CHRB-7. Added CYUSB3031, CYUSB3033, CYUSB3025, CYUSB2025, CYUSB2024, CYUSB3023 part numbers in reference to memo CHRB30. Updated the package availability table. Updated Electrical Test Location. Update contact information in front page to align with current qualification report template. Align qualification report based on the new template in the front page Deleted obsolete spec#11-20099 Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13