Document No. 001-67602 Rev. *D ECN #: 4202366 Cypress Semiconductor Product Qualification Report QTP# 110306 November 2013 HX2VL Family CY7C65632 CY7C65634 CY7C65642 0.152 um, SSMC 4-Port Single-TT Low Power Hub Controller 2-Port Single-TT Low Power Hub Controller 4-Port Multi-TT Low Power Hub Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 9 Document No. 001-67602 Rev. *D ECN #: 4202366 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number 110306 Description of Qualification Purpose Qualify the HX2VL product family Date April 2011 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 9 Document No. 001-67602 Rev. *D ECN #: 4202366 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify HX2VL Family Marketing Part #: CY7C6563x, CY7C65642 Device Description: High-performance, low-power USB 2.0 hub Cypress Division: Cypress Semiconductor Corporation – Data Communications Division (DCD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 5 Metal Composition: Metal 1: 250Å TiN / 3000AlCu / 250Å TiN Metal 2 to 4: 250Å TiN / 4000AlCu / 250Å TiN Metal 5: 500Å TiN / 8000AlCu / 250Å TiN Generic Process Technology/Design Rule (µ-drawn): 1P5M / 0.15u Gate Oxide Material/Thickness (MOS): Thermal oxide / Gate1: 70 Å, Gate2: 32 Å Name/Location of Die Fab (prime) Facility: SSMC – Singapore Die Fab Line ID/Wafer Process ID: C0152G PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 48 TQFP Taiwan IC Packaging (TICP) 28 QFN Taiwan IC Packaging (TICP) Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 9 Document No. 001-67602 Rev. *D ECN #: 4202366 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: AZ48 Lead Frame Material: 48 TQFP G700LY / Sumitomo C7025 Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Hitachi Die Attach Material: EN-4920T Die Attach Method: Epoxy Bond Diagram Designation: 001-65659 Wire Bond Method: Thermosonic Wire Material/Size: Au 1.0 mil Thermal Resistance Theta JA °C/W: 75.8 Package Cross Section Yes/No: 001-65659 Name/Location of Assembly (prime) facility: Taiwan IC Packaging / Taiwan MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: PANTHER TECHNOLOGY CO. ,LTD. TAIWAN Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 9 Document No. 001-67602 Rev. *D ECN #: 4202366 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Storage 150C, 1000 Hours, JESD22-A103 High Temperature Operating Life Dynamic Operating Condition, 125°C, 3.6V, 1000 Hours Latent Failure Rate (LFR) JESD22-A108 High Temperature Operating Life Dynamic Operating Condition, 125°C, 5.5V, 1000 Hours Latent Failure Rate (LFR) JESD22-A108 Temperature Cycle -650C to 1500C, JESD22-A104, 500 Cycles Result P/F P P P P 192hr, 30°C / 60%RH, IR Reflow at 260°C +0,-5°C High Accelerated Stress Test 130°C, 5.0V, 85%RH, JESD22-A110, 96 Hours (HAST) 192hr, 30°C / 60%RH, IR Reflow at 260°C +0,-5°C Temperature-Humidity-Bias Test 85°C, 85%RH, 3.3V, JESD22-A101, 1000 Hours P P 192hr, 30°C / 60%RH, IR Reflow at 260°C +0,-5°C Pressure Cooker 121°C/100%RH, JESD22-A102, 168 Hours P 192hr, 30°C / 60%RH, IR Reflow at 260°C +0,-5°C Aged Bond Strength 200C, 4hrs MIL-STD-883, Method 2011 P Electrostatic Discharge Human Body Model (ESD-HBM) 4000V, MIL-STD-883, Method 3015.7 P Electrostatic Discharge +500V, +750V, +1000V Charge Device Model (ESD-CDM) JESD22-C101 Static Latch-up ± 125mA, 125°C, 8.25V, JESD78 Acoustic (M3) J-STD-020C P High Temperature Operating Life Dynamic Operating Condition, Vcc = 3.3V, 125C P Early Failure Rate (EFR) JESD22-A108 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 9 P Document No. 001-67602 Rev. *D ECN #: 4202366 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1,500 Devices 0 N/A N/A 0ppm 0 0.7 55 107 FIT 154,000 DHRs Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 9 Document No. 001-67602 Rev. *D ECN #: 4202366 Reliability Test Data QTP #: 110306 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY7C65642 NA NA TICP COMP 20 0 Device 1 NA NA TICP COMP 20 0 CY7C65642 NA NA TICP COMP 3 0 CY7C65642 NA NA TICP COMP 3 0 STRESS: AGED BOND STRESS: ESD-HUMAN BODY MODEL, (4000V) CY7C65632 NA NA TICP COMP 3 0 CY7C65642 NA NA TICP COMP 3 0 STRESS: HI-ACCEL STRESS TEST (130C, 85%RH, 5.0V), PRE COND 192 HR 30C/60%RH (MSL3) CY7C65642 NA NA TICP 96 77 0 Device 2 NA NA TICP 96 77 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, Vcc Max) CY7C65642 NA NA TICP 48 500 0 CY7C65642 NA NA TICP 48 500 0 CY7C65642 NA NA TICP 48 500 0 STRESS: HIGH TEMPERATURE STORAGE, 150C CY7C65642 NA NA TICP 1000 77 0 Device 1 NA NA TICP 1000 77 0 Device 2 NA NA TICP 1000 77 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, Vcc Max) CY7C65642 NA NA TICP 1000 77 0 Device 2 NA NA TICP 1000 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3) Device 1 NA NA TICP 168 77 0 Device 2 NA NA TICP 168 77 0 STRESS: STATIC LATCH-UP TESTING (125C, +/-125mA) CY7C65632 NA NA TICP COMP 3 0 CY7C65642 NA NA TICP COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 9 Document No. 001-67602 Rev. *D ECN #: 4202366 Reliability Test Data QTP #: 110306 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C) CY7C65642 NA NA TICP 1000 77 0 Device 1 NA NA TICP 500 77 0 Device 2 NA NA TICP 500 77 0 STRESS: TEMPERATURE HUMIDITY BIAS (85C, 85%RH, 3.3V), PRE COND 192 HR 30C/60%RH (MSL3) Device 1 NA NA TICP 1000 77 0 STRESS: STRESS: ESD-CHARGE DEVICE MODEL, (+/-500V) Device 1 NA NA TICP COMP 3 0 Device 2 NA NA TICP COMP 3 0 STRESS: STRESS: ESD-CHARGE DEVICE MODEL, (+/-750V) Device 1 NA NA TICP COMP 3 0 Device 2 NA NA TICP COMP 3 0 STRESS: STRESS: ESD-CHARGE DEVICE MODEL, (+/-1000V) Device 1 Device 2 NA NA NA TICP 3 0 NA TICP COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 9 Document No. 001-67602 Rev. *D ECN #: 4202366 Document History Page Document Title: Document Number: Rev. ECN No. ** 3237794 *A 3289354 QTP#110306: CY7C6563x/42 AT SSMC PRODUCT QUALIFICATION REPORT 001-67602 Orig. of Change FDW FDW *B 3444269 FDW *C *D 4013464 NSR 4202366 HSTO Description of Change Initial Spec Release Replaced SSMC (Singapore) with TSMC (Taiwan) in the spec title and on page 1 and page 3. Replaced package type LQFP with TQFP. Added CY7C65634 to first page of report. Replaced TSMC (Taiwan) with SSMC (Singapore) in the spec title Added ESD CDM data. Added EFR Data as per memo SSKN-78 Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 9