QTP#110306:CY7C6563X/42 AT SSMC PRODUCT QUALIFICATION REPORT

Document No. 001-67602 Rev. *D
ECN #: 4202366
Cypress Semiconductor
Product Qualification Report
QTP# 110306
November 2013
HX2VL Family
CY7C65632
CY7C65634
CY7C65642
0.152 um, SSMC
4-Port Single-TT Low Power Hub
Controller
2-Port Single-TT Low Power Hub
Controller
4-Port Multi-TT Low Power Hub
Controller
CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:
Mira Ben-Tzur
Reliability Director
(408) 943-2675
Zhaomin Ji
Principal Reliability Engineer
(408) 432-7021
Company Confidential
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Page 1 of 9
Document No. 001-67602 Rev. *D
ECN #: 4202366
PACKAGE/PRODUCT QUALIFICATION HISTORY
QTP
Number
110306
Description of Qualification Purpose
Qualify the HX2VL product family
Date
April 2011
Company Confidential
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Page 2 of 9
Document No. 001-67602 Rev. *D
ECN #: 4202366
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualify HX2VL Family
Marketing Part #:
CY7C6563x, CY7C65642
Device Description:
High-performance, low-power USB 2.0 hub
Cypress Division:
Cypress Semiconductor Corporation – Data Communications Division (DCD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
5
Metal Composition:
Metal 1: 250Å TiN / 3000AlCu / 250Å TiN
Metal 2 to 4: 250Å TiN / 4000AlCu / 250Å TiN
Metal 5: 500Å TiN / 8000AlCu / 250Å TiN
Generic Process Technology/Design Rule (µ-drawn): 1P5M / 0.15u
Gate Oxide Material/Thickness (MOS):
Thermal oxide / Gate1: 70 Å, Gate2: 32 Å
Name/Location of Die Fab (prime) Facility:
SSMC – Singapore
Die Fab Line ID/Wafer Process ID:
C0152G
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY FACILITY SITE
48 TQFP
Taiwan IC Packaging (TICP)
28 QFN
Taiwan IC Packaging (TICP)
Note: Package Qualification details upon request.
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Page 3 of 9
Document No. 001-67602 Rev. *D
ECN #: 4202366
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
AZ48
Lead Frame Material:
48 TQFP
G700LY / Sumitomo
C7025
Lead Finish, Composition / Thickness:
Pure Sn
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
100% Saw
Die Attach Supplier:
Hitachi
Die Attach Material:
EN-4920T
Die Attach Method:
Epoxy
Bond Diagram Designation:
001-65659
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au 1.0 mil
Thermal Resistance Theta JA °C/W:
75.8
Package Cross Section Yes/No:
001-65659
Name/Location of Assembly (prime) facility:
Taiwan IC Packaging / Taiwan
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
PANTHER TECHNOLOGY CO. ,LTD. TAIWAN
Note: Please contact a Cypress Representative for other package availability.
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Page 4 of 9
Document No. 001-67602 Rev. *D
ECN #: 4202366
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
High Temperature Storage
150C, 1000 Hours, JESD22-A103
High Temperature Operating Life
Dynamic Operating Condition, 125°C, 3.6V, 1000 Hours
Latent Failure Rate (LFR)
JESD22-A108
High Temperature Operating Life
Dynamic Operating Condition, 125°C, 5.5V, 1000 Hours
Latent Failure Rate (LFR)
JESD22-A108
Temperature Cycle
-650C to 1500C, JESD22-A104, 500 Cycles
Result
P/F
P
P
P
P
192hr, 30°C / 60%RH, IR Reflow at 260°C +0,-5°C
High Accelerated Stress Test
130°C, 5.0V, 85%RH, JESD22-A110, 96 Hours
(HAST)
192hr, 30°C / 60%RH, IR Reflow at 260°C +0,-5°C
Temperature-Humidity-Bias Test
85°C, 85%RH, 3.3V, JESD22-A101, 1000 Hours
P
P
192hr, 30°C / 60%RH, IR Reflow at 260°C +0,-5°C
Pressure Cooker
121°C/100%RH, JESD22-A102, 168 Hours
P
192hr, 30°C / 60%RH, IR Reflow at 260°C +0,-5°C
Aged Bond Strength
200C, 4hrs
MIL-STD-883, Method 2011
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
4000V, MIL-STD-883, Method 3015.7
P
Electrostatic Discharge
+500V, +750V, +1000V
Charge Device Model (ESD-CDM)
JESD22-C101
Static Latch-up
± 125mA, 125°C, 8.25V, JESD78
Acoustic (M3)
J-STD-020C
P
High Temperature Operating Life
Dynamic Operating Condition, Vcc = 3.3V, 125C
P
Early Failure Rate (EFR)
JESD22-A108
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P
Document No. 001-67602 Rev. *D
ECN #: 4202366
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
High Temperature Operating Life
1
Early Failure Rate
1, 2
High Temperature Operating Life
Long Term Failure Rate
1
2
3
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
1,500 Devices
0
N/A
N/A
0ppm
0
0.7
55
107 FIT
154,000 DHRs
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
-5
K = Boltzmann’s constant = 8.62x10 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
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Page 6 of 9
Document No. 001-67602 Rev. *D
ECN #: 4202366
Reliability Test Data
QTP #: 110306
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY7C65642
NA
NA
TICP
COMP
20
0
Device 1
NA
NA
TICP
COMP
20
0
CY7C65642
NA
NA
TICP
COMP
3
0
CY7C65642
NA
NA
TICP
COMP
3
0
STRESS: AGED BOND
STRESS: ESD-HUMAN BODY MODEL, (4000V)
CY7C65632
NA
NA
TICP
COMP
3
0
CY7C65642
NA
NA
TICP
COMP
3
0
STRESS: HI-ACCEL STRESS TEST (130C, 85%RH, 5.0V), PRE COND 192 HR 30C/60%RH (MSL3)
CY7C65642
NA
NA
TICP
96
77
0
Device 2
NA
NA
TICP
96
77
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, Vcc Max)
CY7C65642
NA
NA
TICP
48
500
0
CY7C65642
NA
NA
TICP
48
500
0
CY7C65642
NA
NA
TICP
48
500
0
STRESS: HIGH TEMPERATURE STORAGE, 150C
CY7C65642
NA
NA
TICP
1000
77
0
Device 1
NA
NA
TICP
1000
77
0
Device 2
NA
NA
TICP
1000
77
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, Vcc Max)
CY7C65642
NA
NA
TICP
1000
77
0
Device 2
NA
NA
TICP
1000
77
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3)
Device 1
NA
NA
TICP
168
77
0
Device 2
NA
NA
TICP
168
77
0
STRESS: STATIC LATCH-UP TESTING (125C, +/-125mA)
CY7C65632
NA
NA
TICP
COMP
3
0
CY7C65642
NA
NA
TICP
COMP
3
0
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Page 7 of 9
Document No. 001-67602 Rev. *D
ECN #: 4202366
Reliability Test Data
QTP #: 110306
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C)
CY7C65642
NA
NA
TICP
1000
77
0
Device 1
NA
NA
TICP
500
77
0
Device 2
NA
NA
TICP
500
77
0
STRESS: TEMPERATURE HUMIDITY BIAS (85C, 85%RH, 3.3V), PRE COND 192 HR 30C/60%RH (MSL3)
Device 1
NA
NA
TICP
1000
77
0
STRESS: STRESS: ESD-CHARGE DEVICE MODEL, (+/-500V)
Device 1
NA
NA
TICP
COMP
3
0
Device 2
NA
NA
TICP
COMP
3
0
STRESS: STRESS: ESD-CHARGE DEVICE MODEL, (+/-750V)
Device 1
NA
NA
TICP
COMP
3
0
Device 2
NA
NA
TICP
COMP
3
0
STRESS: STRESS: ESD-CHARGE DEVICE MODEL, (+/-1000V)
Device 1
Device 2
NA
NA
NA
TICP
3
0
NA
TICP
COMP
3
0
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Page 8 of 9
Document No. 001-67602 Rev. *D
ECN #: 4202366
Document History Page
Document Title:
Document Number:
Rev. ECN
No.
**
3237794
*A
3289354
QTP#110306: CY7C6563x/42 AT SSMC PRODUCT QUALIFICATION REPORT
001-67602
Orig. of
Change
FDW
FDW
*B
3444269 FDW
*C
*D
4013464 NSR
4202366 HSTO
Description of Change
Initial Spec Release
Replaced SSMC (Singapore) with TSMC (Taiwan) in the spec title and
on page 1 and page 3. Replaced package type LQFP with TQFP.
Added CY7C65634 to first page of report.
Replaced TSMC (Taiwan) with SSMC (Singapore) in the spec title
Added ESD CDM data.
Added EFR Data as per memo SSKN-78
Distribution: WEB
Posting:
None
Company Confidential
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Page 9 of 9