QTP 113005 64K Serial Non-Volatile SRAM Product Family S8 Technology CMI (Fab 4).pdf

Document No.001-85611 Rev.*A
ECN # 5106807
Cypress Semiconductor
Product Qualification Plan
QTP# 113005
January 2013
64K Serial Non-Volatile SRAM Product Family
S8 Technology, CMI (Fab 4)
CY14MB064Q2B
CY14MB064Q1B
3V, 64-KBIT (8 K X 8) SPI NVSRAM
CY14ME064Q2B
CY14ME064Q1B
5V, 64-KBIT (8 K X 8) SPI NVSRAM
CY14MB064J2A
CY14MB064J1A
CY14ME064J2A
CY14ME064J1A
3V, 64-KBIT (8 K X 8) SERIAL (I2C)
NVSRAM
5V, 64-KBIT (8 K X 8) SERIAL (I2C)
NVSRAM
CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:
Zhaomin Ji
Principal Reliability Engineer
(408) 432-7021
Mira Ben-Tzur
Quality Engineering Director
(408) 943-2675
Company Confidential
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Page 1 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
QUALIFICATION HISTORY
Qual
Report
Description of Qualification Purpose
Date
Comp
071304
To qualify S8 SONOS technology and 4M nvSRAM devices CY14B104L /
CY14B104N (7C14104AC base die) using S8TNV-5R, fabricated at Cypress
Minnesota CMI (Fab4)
Nov 2008
102204
To qualify Indus 1M serial nvSRAM using S8 technology at CMI (Fab4)
June 2010
122802
To qualify Indus 1M serial nvSRAM 5V device option
Sep 2012
113005
To Qualify Manas, 64K Serial NVSRAM, in S8TNV-5R Technology, CMI Fab4
Nov 2012
Company Confidential
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Page 2 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
PRODUCT DESCRIPTION (for qualification)
Purpose: Qualification of Manas, 64K Serial NVSRAM, in S8TNV-5R Technology, CMI Fab4
Marketing Part #:
CY14MB064Q2B, CY14MB064Q1B, CY14ME064Q2B, CY14ME064Q1B, CY14MB064J2A,
CY14MB064J1A, CY14ME064J2A, CY14ME064J1A
Device Description:
3V & 5V Commercial/Industrial, available in 8Lead SOIC
Cypress Division:
Cypress Semiconductor Corporation – MPD
TECHNOLOGY/FAB PROCESS DESCRIPTION – S8TNV-5R
Number of Metal Layers:
3
Passivation Type:
Metal 1: 100A Ti / 3200A Al -0.5%Cu / 300A TiW
Metal
Composition: Metal 2: 100A Ti / 3200A Al -0.5%Cu / 300A TiW
Metal 3: 150A Ti / 7200A Al -0.5%Cu / 300A TiW
7000 +/- 2000A Nitride
Generic Process Technology/Design Rule (drawn): S8TNV-5R/0.13m
Gate Oxide Material/Thickness (MOS):
SiO2 /110A & SiO2/32A
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor -- Bloomington, MN
Die Fab Line ID/Wafer Process ID:
Fab4 / S8TNV-5
PACKAGE AVAILABILITY
ASSEMBLY FACILITY SITE
PACKAGE
8L-SOIC
CML-RA
Note: Package Qualification details upon request
Company Confidential
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Page 3 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
SZ815
Package Outline, Type, or Name:
8-Lead SOIC
Mold Compound Name/Manufacturer:
MP8500/ Nitto
Mold Compound Flammability Rating:
V-O per UL94
Oxygen Rating Index:
None
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
100% Saw
Die Attach Supplier:
Henkel
Die Attach Material:
QMI-509
Die Attach Method:
Epoxy
Bond Diagram Designation:
001-71917
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au / 0.9 mil
Thermal Resistance Theta JA °C/W:
101.8°C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001-69914
Name/Location of Assembly (prime) facility:
CML – RA
MSL Level
3
Reflow Profile
260C
Company Confidential
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Page 4 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
High Temperature Operating Life
Early Failure Rate (EFR)
Test Condition
(Temp/Bias)
Dynamic Operating Condition, 2.7V/3.3V/5.5V, 150C/48H or
125C/96H
Result
P/F
P
JESD22-A-108-B
High Temperature Operating Life
Latent Failure Rate (LFR)
Dynamic Operating Condition, 2.7V/3.3C/5.5V, 150C/500H or
125C/1000H
P
JESD22-A-108-B
Pre/Post LFR AC/DC Char
AC/DC Critical Parameter Char at LFR 0hrs, 80hrs & 500hrs
P
Endurance
1 Million Cycles @ 90C, Per datasheet
P
Data Retention
150C, 1000 Hours
P
Temperature Cycle
-650C to 1500C, JESD22-A-104
P
500 Cycs, Require Precondition
High Accelerated Saturation Test
130C, 3.63V, 85%RH, JESD22-A-110-B
(HAST)
128 Hours, Require Precondition
Pressure Cooker
121C/100%RH, JESD22-A102-C
P
P
168 Hours, Require Precondition
Precondition
JESD22 Moisture Sensitivity
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V, JESD22-A114E
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V, JESD22-C101C
Electrostatic Discharge
Machine Model (ESD-MM)
200V, JESD22-A115-A
Latch-up Sensitivity
5.4V,± 200mA, 125C, EIA/JESD78
P
Age Bond Strength
Mil-Std-883, Method 2011
P
Acoustic
MSL 3
P
Soft Error (Alpha Particle)
JESD89A
P
Soft Error (Neutron/Proton)
JESD89A
P
SEM X-Section
XY audit at center wafer and edge wafer
P
Low Temperature Operating Life Test
Dynamic Operating Condition, 2.7V, -30C, 500 Hours
P
High Temp Steady State Life Test
Static Operating Condition, 2.7V, 150C, 1000 Hours
P
P
P
P
Company Confidential
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Page 5 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF4
Failure Rate
High Temperature Operating Life
Early Failure Rate
4,617 Devices 1
0
N/A
N/A
0 PPM
High Temperature Operating Life1,2,
Long Term Failure Rate
537,816 DHRs 2
0
0.7
170
9 FITs
188,640 DHRs 3
0
0.7
55
1
2
3
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device
at use conditions.
1
EFR failure rate data is based on QTP#113005
LFR data from QTP#071304 & QTP#102204
3
LFR data from QTP#122802 & QTP113005
2
Company Confidential
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Page 6 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
071304
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 2.7V, Vcc Max
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
48
1222
0
CY14B104L (7C14104AC)
4814841
610832326
CML-RA
48
1316
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
48
932
0
CY14B104L (7C14104AC)
4819437
610842294
CML-RA
48
813
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.7V, Vcc Max
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
500
120
0
CY14B104L (7C14104AC)
4814841
610832326
CML-RA
500
120
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
500
119
0
CY14B104L (7C14104AC)
4819437
610842294
CML-RA
500
119
0
STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
80/500
10
0
CY14B104L (7C14104AC)
4814841
610832326
CML-RA
80/500
10
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
80/500
10
0
CY14B104L (7C14104AC)
4819437
610842294
CML-RA
80/500
10
0
STRESS: ENDURANCE, 200K CYCLES, 90C
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
COMP
80
0
CY14B104L (7C14104AC)
4817305
610841260
CML-RA
COMP
77
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
COMP
160
0
CY14B104L (7C14104AC)
4819437
610842294
CML-RA
COMP
80
0
CY14B104L (7C14104AC)
4817306/4818074
CML-RA
COMP
3307
0
STRESS: DATA RETENTION, 150C
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
1000
77
0
CY14B104L (WAFER)
4817306
610830615
CML-RA
1008
228
0
CY14B104L (7C14104AC)
4817305
610841260
CML-RA
1000
80
0
CY14B104L (WAFER)
4817305
610841260
CML-RA
1008
216
0
CY14B104L (7C14104AC)
4818074
N/A
CML-RA
1000
80
0
CY14B104L (WAFER)
4818074
N/A
CML-RA
1008
402
0
Company Confidential
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Page 7 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
071304
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V
CY14B104L (7C14104AC)
4807004
610812949
CML-RA
COMP
8
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
COMP
8
0
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
COMP
8
0
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY14B104L (7C14104AC)
4807004
610812949
CML-RA
COMP
9
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
COMP
9
0
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
COMP
9
0
STRESS: ESD-MACHINE MODEL, 200V
CY14B104L (7C14104AC)
4807004
610812949
CML-RA
COMP
5
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
COMP
5
0
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
COMP
5
0
STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 1.98V, PRE COND 192 HR 30C/60%RH, MSL3
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
128
77
0
CY14B104L (7C14104AC)
4814841
610832326
CML-RA
128
80
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
128
77
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3
CY14B104L (7C14104AC)
4807004
610812949
CML-RA
168
77
0
CY14B104L (7C14104AC)
4814841
610832326
CML-RA
168
80
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
168
77
0
STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CY14B104L (7C14104AC)
4807004
610812949
CML-RA
1000
77
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
1000
80
0
CY14B104L (7C14104AC)
4814841
610832326
CML-RA
500
80
0
STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, 200mA
CY14B104L (7C14104AC)
4807004
610812949
CML-RA
COMP
6
0
CY14B104L (7C14104AC)
4814841
610832326
CML-RA
COMP
6
0
CY14B104L (7C14104AC)
4819437
610842294
CML-RA
COMP
6
0
Company Confidential
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Page 8 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
071304
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: AGE BOND
CY14B104L (7C14104AC)
4807004
610812949
CML-RA
COMP
10
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
COMP
10
0
CY14B104L (WAFER)
4818074
N/A
CML-RA
COMP
10
0
CY14B104L (7C14104AC)
4807004
610812949
CML-RA
COMP
15
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
COMP
15
0
CY14B104L (7C14104AC)
4814841
610832326
CML-RA
COMP
15
0
STRESS: ACOUSTIC-MSL3
STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, FIT=550 FIT/Mbit @ 85C, Vcc Nom
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
COMP
3
0
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
COMP
3
0
CY14B104L (7C14104AC)
4819437
610842294
CML-RA
COMP
3
0
N/A
CML-RA
COMP
3
0
500
77
0
1000
76
0
STRESS: SER – NEUTRON/PROTON
CY14B104L (7C14104AC)
4808220
STRESS: LOW TEMPERATURE OPERATING LIFE TEST, -30C, 2.7V, Vcc Max
CY14B104L (7C14104AC)
4817306
610830615
CML-RA
STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 2.7V, Vcc Max
CY14B104L (7C14104AC)
4811240
610819876
CML-RA
Company Confidential
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Page 9 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
102204
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.3V, Vcc Max
CY14MB064Q2A (7C1436B5A)
4033346
611113629
CML-RA
48
631
0
CY14MB064J2 (7C14104B)
4033346
611113777
CML-RA
48
1461
0
CY14B101Q2A (7C1431B5A)
4034960
611109619
M-PHIL
48
1073
0
CY14B101Q1A (7C1431B9A)
4050477
611118869
CML-RA
48
883
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.3V, Vcc Max
CY14B101Q2A (7C1431B5A)
4034960
611109619
M-PHIL
80
1050
0
CY14B101Q2A (7C1431B5A)
4034960
611109619
M-PHIL
168
130
0
CY14MB064Q2A (7C1436B5A)
4033346
611113629
CML-RA
80
618
0
CY14MB064Q2A (7C1436B5A)
4033346
611113629
CML-RA
168
194
0
CY14MB064J2 (7C14104B)
4033346
611113777
CML-RA
80
1442
0
CY14B101Q1A (7C1431B9A)
4050477
611118869
CML-RA
168
128
0
STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR
CY14B101Q1A (7C1431B9A)
4050477
611118869
CML-RA
COMP
10
0
CY14ME064Q2A (7C1436E5A)
4050477
611118870
CML-RA
COMP
10
0
STRESS: ENDURANCE, 1M CYCLES+168 HOURS DATA RETENTION
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
168
39
0
CY14E101PA (7C1431E3A)
4032722
611056066
CML-RA
168
41
0
STRESS: DATA RETENTION (150C)
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
500
80
0
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
1000
80
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
COMP
8
0
CY14E101Q2A (7C1431E5A)
4032722
611055560
CML-RA
COMP
8
0
CY14E101J2 (7C1431ECA)
4032722
611056167
CML-RA
COMP
8
0
CY14E101PA (7C1431E3A)
4032722
611056066
M-PHIL
COMP
8
0
CY14B101PA (7C1431B3A)
4032722
611056060
M-PHIL
COMP
8
0
CY14E101Q1A (7C1431E9A)
4032722
611055556
CML-RA
COMP
8
0
CY14E101PA (7C1431E9A)
4034960
611109616
M-PHIL
COMP
8
0
Company Confidential
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Page 10 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
102204
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
COMP
9
0
CY14E101PA (7C1431E3A)
4032722
611056066
M-PHIL
COMP
9
0
CY14B101PA (7C1431B3A)
4032722
611056060
M-PHIL
COMP
9
0
CY14E101Q1A (7C1431E9A)
4032722
611055556
CML-RA
COMP
9
0
STRESS: ESD-MACHINE MODEL, 200V
CY14E101Q2A (7C1431E5A)
4032722
611055560
CML-RA
COMP
5
0
CY14E101PA (7C1431E9A)
4034960
611109616
M-PHIL
COMP
5
0
CY14E101J2 (7C1431E3A)
4034960
611109614
M-PHIL
COMP
5
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
168
80
0
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
288
80
0
STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
500
80
0
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
1000
80
0
STRESS: STATIC LATCH-UP TESTING, 125C, 140mA
CY14B101Q2A (7C1431B5A)
4032722
611055561
CML-RA
COMP
6
0
CY14B101Q1A (7C1431B9A)
4032722
611057658
M-PHIL
COMP
6
0
CY14E101PA (7C1431E3A)
4032722
611056066
M-PHIL
COMP
6
0
CY14B101PA (7C1431B3A)
4032722
611056060
M-PHIL
COMP
6
0
CY14E101Q1A (7C1431E9A)
4032722
611055556
CML-RA
COMP
6
0
CY14E101PA (7C1431E9A)
4034960
611109616
M-PHIL
COMP
6
0
CY14B101PA (7C1431B3A)
4034960
611109618
M-PHIL
COMP
6
0
4032722
611055561
CML-RA
COMP
15
0
COMP
3
0
STRESS: ACOUSTIC-MSL3
CY14B101Q2A (7C1431B5A)
STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, @ 85C, Vcc Nom
CY14E101Q2A (7C14104B)
4034960
611109692
M-PHIL
Company Confidential
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Page 11 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
122802
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max
CY14ME064Q2A (7C1436B5A)
4228534
611230237
CML-RA
96
1201
0
CY14ME064Q2A (7C1436B5A)
4229040
611230238
CML-RA
96
1939
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.3V, Vcc Max
CY14MB064Q2A (7C1436B5A)
4229040
611230171
CML-RA
96
697
0
CY14MB064Q2A (7C1436B5A)
4228534
611230172
CML-RA
96
686
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max
CY14ME064Q2A (7C1436B5A)
4228534
611230237
CML-RA
168
108
0
CY14ME064Q2A (7C1436B5A)
4229040
611230238
CML-RA
168
108
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.3V, Vcc Max
CY14MB064Q2A (7C1436B5A)
4229040
611230171
CML-RA
168
88
0
CY14MB064Q2A (7C1436B5A)
4228534
611230172
CML-RA
168
88
0
STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR
CY14ME064Q2A (7C1436B5A)
4228534
611230237
CML-RA
COMP
10
0
CY14ME064Q2A (7C1436B5A)
4229040
611230238
CML-RA
COMP
10
0
CY14MB064Q2A (7C1436B5A)
4229040
611230171
CML-RA
COMP
10
0
CY14MB064Q2A (7C1436B5A)
4228534
611230172
CML-RA
COMP
10
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V
CY14MB064Q2A (7C1436B5A)
4228534
611229009
CML-RA
COMP
8
0
CY14MB064Q2A (7C1436B5A)
4228534
611229013
CML-RA
COMP
8
0
CY14MB064Q2A (7C1436B5A)
4228534
611229012
CML-RA
COMP
8
0
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY14MB064Q2A (7C1436B5A)
4228534
611229009
CML-RA
COMP
9
0
CY14MB064Q2A (7C1436B5A)
4228534
611229013
CML-RA
COMP
9
0
CY14MB064Q2A (7C1436B5A)
4228534
611229012
CML-RA
COMP
9
0
STRESS: ESD-MACHINE MODEL, 200V
CY14MB064Q2A (7C1436B5A)
4228534
611229009
CML-RA
COMP
5
0
CY14MB064Q2A (7C1436B5A)
4228534
611229013
CML-RA
COMP
5
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 12 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
122802
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: STATIC LATCH-UP TESTING, 85C/125C, 140mA
CY14MB064Q2A (7C1436B5A)
4228534
611229011
CML-RA
COMP
6
0
CY14MB064Q2A (7C1436B5A)
4228534
611229012
CML-RA
COMP
6
0
4228534
611229009
CML-RA
COMP
15
0
STRESS: ACOUSTIC-MSL3
CY14MB064Q2A (7C1436B5A)
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3
CY14MB064Q2A (7C1436B5A)
4228534
611229009
CML-RA
168
76
0
STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CY14MB064Q2A (7C1436B5A)
4228534
611229009
CML-RA
500
77
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
113005
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max
CY14ME064Q2B (7C1446E5A)
4231244
611236507
CML-RA
96
3330
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.3V, Vcc Max
CY14MB064Q2B (7C1446B5A)
4231244
611236508
CML-RA
96
594
0
CY14MB064Q2B (7C1446B5A)
4231244
611236522
CML-RA
96
693
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max
CY14ME064Q2B (7C1446E5A)
4231244
611236507
CML-RA
168
108
0
CY14ME064Q2B (7C1446E5A)
4231244
611236507
CML-RA
500
108
0
CY14ME064Q2B (7C1446E5A)
4231244
611236507
CML-RA
1000
108
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.3V, Vcc Max
CY14MB064Q2B (7C1446B5A)
4231244
611236508
CML-RA
168
88
0
STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR
CY14ME064Q2B (7C1446E5A)
4231244
611236507
CML-RA
168
16
0
CY14MB064Q2B (7C1446B5A)
4231244
611236508
CML-RA
168
16
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V
CY14ME064Q1B (7C1446E9A)
4231244
611236512
CML-RA
COMP
8
0
CY14ME064Q2B (7C1446E5A)
4231244
611236507
CML-RA
COMP
8
0
CY14ME064J2A (7C14EC46A)
4231244
611236510
CML-RA
COMP
8
0
611236512
CML-RA
COMP
9
0
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY14ME064Q1B (7C1446E9A)
4231244
STRESS: ESD-MACHINE MODEL, 200V
CY14ME064Q1B (7C1446E9A)
4231244
611236512
CML-RA
COMP
5
0
CY14ME064Q2B (7C1446E5A)
4231244
611236507
CML-RA
COMP
5
0
CY14ME064J2A (7C14EC46A)
4231244
611236510
CML-RA
COMP
5
0
STRESS: STATIC LATCH-UP TESTING, 85C, 140mA
CY14ME064Q1B (7C1446E9A)
4231244
611236512
CML-RA
COMP
6
0
CY14MB064Q1B (7C1446B9A)
4231244
611236511
CML-RA
COMP
6
0
STRESS: DYNAMIC LATCH-UP TESTING, 125C (3V part – 5.5V, 5V Part – 8V)
CY14ME064Q1B (7C1446E9A)
4231244
611236512
CML-RA
COMP
1
0
CY14MB064Q1B (7C1446B9A)
4231244
611236511
CML-RA
COMP
1
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 15
Document No.001-85611 Rev.*A
ECN # 5106807
Document History Page
Document Title:
(FAB 4)
Document Number:
Rev. ECN
No.
**
3863005
*A
5106807
QTP 113005: 64K SERIAL NON-VOLATILE SRAM PRODUCT FAMILY S8 TECHNOLOGY, CMI
001-85611
Orig. of Description of Change
Change
NSR
Initial spec release
ILZ
No Change. Sunset Review
DCON
Removed Distribution: WEB and Posting: None in the document history
page.
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 15