Document No.001-85611 Rev.*A ECN # 5106807 Cypress Semiconductor Product Qualification Plan QTP# 113005 January 2013 64K Serial Non-Volatile SRAM Product Family S8 Technology, CMI (Fab 4) CY14MB064Q2B CY14MB064Q1B 3V, 64-KBIT (8 K X 8) SPI NVSRAM CY14ME064Q2B CY14ME064Q1B 5V, 64-KBIT (8 K X 8) SPI NVSRAM CY14MB064J2A CY14MB064J1A CY14ME064J2A CY14ME064J1A 3V, 64-KBIT (8 K X 8) SERIAL (I2C) NVSRAM 5V, 64-KBIT (8 K X 8) SERIAL (I2C) NVSRAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 15 Document No.001-85611 Rev.*A ECN # 5106807 QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 071304 To qualify S8 SONOS technology and 4M nvSRAM devices CY14B104L / CY14B104N (7C14104AC base die) using S8TNV-5R, fabricated at Cypress Minnesota CMI (Fab4) Nov 2008 102204 To qualify Indus 1M serial nvSRAM using S8 technology at CMI (Fab4) June 2010 122802 To qualify Indus 1M serial nvSRAM 5V device option Sep 2012 113005 To Qualify Manas, 64K Serial NVSRAM, in S8TNV-5R Technology, CMI Fab4 Nov 2012 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 15 Document No.001-85611 Rev.*A ECN # 5106807 PRODUCT DESCRIPTION (for qualification) Purpose: Qualification of Manas, 64K Serial NVSRAM, in S8TNV-5R Technology, CMI Fab4 Marketing Part #: CY14MB064Q2B, CY14MB064Q1B, CY14ME064Q2B, CY14ME064Q1B, CY14MB064J2A, CY14MB064J1A, CY14ME064J2A, CY14ME064J1A Device Description: 3V & 5V Commercial/Industrial, available in 8Lead SOIC Cypress Division: Cypress Semiconductor Corporation – MPD TECHNOLOGY/FAB PROCESS DESCRIPTION – S8TNV-5R Number of Metal Layers: 3 Passivation Type: Metal 1: 100A Ti / 3200A Al -0.5%Cu / 300A TiW Metal Composition: Metal 2: 100A Ti / 3200A Al -0.5%Cu / 300A TiW Metal 3: 150A Ti / 7200A Al -0.5%Cu / 300A TiW 7000 +/- 2000A Nitride Generic Process Technology/Design Rule (drawn): S8TNV-5R/0.13m Gate Oxide Material/Thickness (MOS): SiO2 /110A & SiO2/32A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor -- Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4 / S8TNV-5 PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 8L-SOIC CML-RA Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 15 Document No.001-85611 Rev.*A ECN # 5106807 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: SZ815 Package Outline, Type, or Name: 8-Lead SOIC Mold Compound Name/Manufacturer: MP8500/ Nitto Mold Compound Flammability Rating: V-O per UL94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Henkel Die Attach Material: QMI-509 Die Attach Method: Epoxy Bond Diagram Designation: 001-71917 Wire Bond Method: Thermosonic Wire Material/Size: Au / 0.9 mil Thermal Resistance Theta JA °C/W: 101.8°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001-69914 Name/Location of Assembly (prime) facility: CML – RA MSL Level 3 Reflow Profile 260C Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 15 Document No.001-85611 Rev.*A ECN # 5106807 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate (EFR) Test Condition (Temp/Bias) Dynamic Operating Condition, 2.7V/3.3V/5.5V, 150C/48H or 125C/96H Result P/F P JESD22-A-108-B High Temperature Operating Life Latent Failure Rate (LFR) Dynamic Operating Condition, 2.7V/3.3C/5.5V, 150C/500H or 125C/1000H P JESD22-A-108-B Pre/Post LFR AC/DC Char AC/DC Critical Parameter Char at LFR 0hrs, 80hrs & 500hrs P Endurance 1 Million Cycles @ 90C, Per datasheet P Data Retention 150C, 1000 Hours P Temperature Cycle -650C to 1500C, JESD22-A-104 P 500 Cycs, Require Precondition High Accelerated Saturation Test 130C, 3.63V, 85%RH, JESD22-A-110-B (HAST) 128 Hours, Require Precondition Pressure Cooker 121C/100%RH, JESD22-A102-C P P 168 Hours, Require Precondition Precondition JESD22 Moisture Sensitivity P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114E Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C Electrostatic Discharge Machine Model (ESD-MM) 200V, JESD22-A115-A Latch-up Sensitivity 5.4V,± 200mA, 125C, EIA/JESD78 P Age Bond Strength Mil-Std-883, Method 2011 P Acoustic MSL 3 P Soft Error (Alpha Particle) JESD89A P Soft Error (Neutron/Proton) JESD89A P SEM X-Section XY audit at center wafer and edge wafer P Low Temperature Operating Life Test Dynamic Operating Condition, 2.7V, -30C, 500 Hours P High Temp Steady State Life Test Static Operating Condition, 2.7V, 150C, 1000 Hours P P P P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 15 Document No.001-85611 Rev.*A ECN # 5106807 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate High Temperature Operating Life Early Failure Rate 4,617 Devices 1 0 N/A N/A 0 PPM High Temperature Operating Life1,2, Long Term Failure Rate 537,816 DHRs 2 0 0.7 170 9 FITs 188,640 DHRs 3 0 0.7 55 1 2 3 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 1 EFR failure rate data is based on QTP#113005 LFR data from QTP#071304 & QTP#102204 3 LFR data from QTP#122802 & QTP113005 2 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 15 Document No.001-85611 Rev.*A ECN # 5106807 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 071304 Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 2.7V, Vcc Max CY14B104L (7C14104AC) 4811240 610819876 CML-RA 48 1222 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 48 1316 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 48 932 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA 48 813 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.7V, Vcc Max CY14B104L (7C14104AC) 4811240 610819876 CML-RA 500 120 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 500 120 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 500 119 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA 500 119 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY14B104L (7C14104AC) 4811240 610819876 CML-RA 80/500 10 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 80/500 10 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 80/500 10 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA 80/500 10 0 STRESS: ENDURANCE, 200K CYCLES, 90C CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 80 0 CY14B104L (7C14104AC) 4817305 610841260 CML-RA COMP 77 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 160 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA COMP 80 0 CY14B104L (7C14104AC) 4817306/4818074 CML-RA COMP 3307 0 STRESS: DATA RETENTION, 150C CY14B104L (7C14104AC) 4817306 610830615 CML-RA 1000 77 0 CY14B104L (WAFER) 4817306 610830615 CML-RA 1008 228 0 CY14B104L (7C14104AC) 4817305 610841260 CML-RA 1000 80 0 CY14B104L (WAFER) 4817305 610841260 CML-RA 1008 216 0 CY14B104L (7C14104AC) 4818074 N/A CML-RA 1000 80 0 CY14B104L (WAFER) 4818074 N/A CML-RA 1008 402 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 15 Document No.001-85611 Rev.*A ECN # 5106807 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 071304 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 8 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 8 0 CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 8 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 9 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 9 0 CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 9 0 STRESS: ESD-MACHINE MODEL, 200V CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 5 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 5 0 CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 5 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 1.98V, PRE COND 192 HR 30C/60%RH, MSL3 CY14B104L (7C14104AC) 4811240 610819876 CML-RA 128 77 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 128 80 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 128 77 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY14B104L (7C14104AC) 4807004 610812949 CML-RA 168 77 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 168 80 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 168 77 0 STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY14B104L (7C14104AC) 4807004 610812949 CML-RA 1000 77 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 1000 80 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 500 80 0 STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, 200mA CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 6 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA COMP 6 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 15 Document No.001-85611 Rev.*A ECN # 5106807 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 071304 Assy Loc Duration Samp Rej Failure Mechanism STRESS: AGE BOND CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 10 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 10 0 CY14B104L (WAFER) 4818074 N/A CML-RA COMP 10 0 CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 15 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 15 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA COMP 15 0 STRESS: ACOUSTIC-MSL3 STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, FIT=550 FIT/Mbit @ 85C, Vcc Nom CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 3 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 3 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA COMP 3 0 N/A CML-RA COMP 3 0 500 77 0 1000 76 0 STRESS: SER – NEUTRON/PROTON CY14B104L (7C14104AC) 4808220 STRESS: LOW TEMPERATURE OPERATING LIFE TEST, -30C, 2.7V, Vcc Max CY14B104L (7C14104AC) 4817306 610830615 CML-RA STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 2.7V, Vcc Max CY14B104L (7C14104AC) 4811240 610819876 CML-RA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 15 Document No.001-85611 Rev.*A ECN # 5106807 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 102204 Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.3V, Vcc Max CY14MB064Q2A (7C1436B5A) 4033346 611113629 CML-RA 48 631 0 CY14MB064J2 (7C14104B) 4033346 611113777 CML-RA 48 1461 0 CY14B101Q2A (7C1431B5A) 4034960 611109619 M-PHIL 48 1073 0 CY14B101Q1A (7C1431B9A) 4050477 611118869 CML-RA 48 883 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.3V, Vcc Max CY14B101Q2A (7C1431B5A) 4034960 611109619 M-PHIL 80 1050 0 CY14B101Q2A (7C1431B5A) 4034960 611109619 M-PHIL 168 130 0 CY14MB064Q2A (7C1436B5A) 4033346 611113629 CML-RA 80 618 0 CY14MB064Q2A (7C1436B5A) 4033346 611113629 CML-RA 168 194 0 CY14MB064J2 (7C14104B) 4033346 611113777 CML-RA 80 1442 0 CY14B101Q1A (7C1431B9A) 4050477 611118869 CML-RA 168 128 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY14B101Q1A (7C1431B9A) 4050477 611118869 CML-RA COMP 10 0 CY14ME064Q2A (7C1436E5A) 4050477 611118870 CML-RA COMP 10 0 STRESS: ENDURANCE, 1M CYCLES+168 HOURS DATA RETENTION CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 168 39 0 CY14E101PA (7C1431E3A) 4032722 611056066 CML-RA 168 41 0 STRESS: DATA RETENTION (150C) CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 500 80 0 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 1000 80 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA COMP 8 0 CY14E101Q2A (7C1431E5A) 4032722 611055560 CML-RA COMP 8 0 CY14E101J2 (7C1431ECA) 4032722 611056167 CML-RA COMP 8 0 CY14E101PA (7C1431E3A) 4032722 611056066 M-PHIL COMP 8 0 CY14B101PA (7C1431B3A) 4032722 611056060 M-PHIL COMP 8 0 CY14E101Q1A (7C1431E9A) 4032722 611055556 CML-RA COMP 8 0 CY14E101PA (7C1431E9A) 4034960 611109616 M-PHIL COMP 8 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 15 Document No.001-85611 Rev.*A ECN # 5106807 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 102204 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL, 500V CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA COMP 9 0 CY14E101PA (7C1431E3A) 4032722 611056066 M-PHIL COMP 9 0 CY14B101PA (7C1431B3A) 4032722 611056060 M-PHIL COMP 9 0 CY14E101Q1A (7C1431E9A) 4032722 611055556 CML-RA COMP 9 0 STRESS: ESD-MACHINE MODEL, 200V CY14E101Q2A (7C1431E5A) 4032722 611055560 CML-RA COMP 5 0 CY14E101PA (7C1431E9A) 4034960 611109616 M-PHIL COMP 5 0 CY14E101J2 (7C1431E3A) 4034960 611109614 M-PHIL COMP 5 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 168 80 0 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 288 80 0 STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 500 80 0 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 1000 80 0 STRESS: STATIC LATCH-UP TESTING, 125C, 140mA CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA COMP 6 0 CY14B101Q1A (7C1431B9A) 4032722 611057658 M-PHIL COMP 6 0 CY14E101PA (7C1431E3A) 4032722 611056066 M-PHIL COMP 6 0 CY14B101PA (7C1431B3A) 4032722 611056060 M-PHIL COMP 6 0 CY14E101Q1A (7C1431E9A) 4032722 611055556 CML-RA COMP 6 0 CY14E101PA (7C1431E9A) 4034960 611109616 M-PHIL COMP 6 0 CY14B101PA (7C1431B3A) 4034960 611109618 M-PHIL COMP 6 0 4032722 611055561 CML-RA COMP 15 0 COMP 3 0 STRESS: ACOUSTIC-MSL3 CY14B101Q2A (7C1431B5A) STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, @ 85C, Vcc Nom CY14E101Q2A (7C14104B) 4034960 611109692 M-PHIL Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 15 Document No.001-85611 Rev.*A ECN # 5106807 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 122802 Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY14ME064Q2A (7C1436B5A) 4228534 611230237 CML-RA 96 1201 0 CY14ME064Q2A (7C1436B5A) 4229040 611230238 CML-RA 96 1939 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.3V, Vcc Max CY14MB064Q2A (7C1436B5A) 4229040 611230171 CML-RA 96 697 0 CY14MB064Q2A (7C1436B5A) 4228534 611230172 CML-RA 96 686 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY14ME064Q2A (7C1436B5A) 4228534 611230237 CML-RA 168 108 0 CY14ME064Q2A (7C1436B5A) 4229040 611230238 CML-RA 168 108 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.3V, Vcc Max CY14MB064Q2A (7C1436B5A) 4229040 611230171 CML-RA 168 88 0 CY14MB064Q2A (7C1436B5A) 4228534 611230172 CML-RA 168 88 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY14ME064Q2A (7C1436B5A) 4228534 611230237 CML-RA COMP 10 0 CY14ME064Q2A (7C1436B5A) 4229040 611230238 CML-RA COMP 10 0 CY14MB064Q2A (7C1436B5A) 4229040 611230171 CML-RA COMP 10 0 CY14MB064Q2A (7C1436B5A) 4228534 611230172 CML-RA COMP 10 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY14MB064Q2A (7C1436B5A) 4228534 611229009 CML-RA COMP 8 0 CY14MB064Q2A (7C1436B5A) 4228534 611229013 CML-RA COMP 8 0 CY14MB064Q2A (7C1436B5A) 4228534 611229012 CML-RA COMP 8 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY14MB064Q2A (7C1436B5A) 4228534 611229009 CML-RA COMP 9 0 CY14MB064Q2A (7C1436B5A) 4228534 611229013 CML-RA COMP 9 0 CY14MB064Q2A (7C1436B5A) 4228534 611229012 CML-RA COMP 9 0 STRESS: ESD-MACHINE MODEL, 200V CY14MB064Q2A (7C1436B5A) 4228534 611229009 CML-RA COMP 5 0 CY14MB064Q2A (7C1436B5A) 4228534 611229013 CML-RA COMP 5 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 15 Document No.001-85611 Rev.*A ECN # 5106807 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 122802 Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP TESTING, 85C/125C, 140mA CY14MB064Q2A (7C1436B5A) 4228534 611229011 CML-RA COMP 6 0 CY14MB064Q2A (7C1436B5A) 4228534 611229012 CML-RA COMP 6 0 4228534 611229009 CML-RA COMP 15 0 STRESS: ACOUSTIC-MSL3 CY14MB064Q2A (7C1436B5A) STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY14MB064Q2A (7C1436B5A) 4228534 611229009 CML-RA 168 76 0 STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY14MB064Q2A (7C1436B5A) 4228534 611229009 CML-RA 500 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 15 Document No.001-85611 Rev.*A ECN # 5106807 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 113005 Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY14ME064Q2B (7C1446E5A) 4231244 611236507 CML-RA 96 3330 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.3V, Vcc Max CY14MB064Q2B (7C1446B5A) 4231244 611236508 CML-RA 96 594 0 CY14MB064Q2B (7C1446B5A) 4231244 611236522 CML-RA 96 693 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY14ME064Q2B (7C1446E5A) 4231244 611236507 CML-RA 168 108 0 CY14ME064Q2B (7C1446E5A) 4231244 611236507 CML-RA 500 108 0 CY14ME064Q2B (7C1446E5A) 4231244 611236507 CML-RA 1000 108 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.3V, Vcc Max CY14MB064Q2B (7C1446B5A) 4231244 611236508 CML-RA 168 88 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY14ME064Q2B (7C1446E5A) 4231244 611236507 CML-RA 168 16 0 CY14MB064Q2B (7C1446B5A) 4231244 611236508 CML-RA 168 16 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY14ME064Q1B (7C1446E9A) 4231244 611236512 CML-RA COMP 8 0 CY14ME064Q2B (7C1446E5A) 4231244 611236507 CML-RA COMP 8 0 CY14ME064J2A (7C14EC46A) 4231244 611236510 CML-RA COMP 8 0 611236512 CML-RA COMP 9 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY14ME064Q1B (7C1446E9A) 4231244 STRESS: ESD-MACHINE MODEL, 200V CY14ME064Q1B (7C1446E9A) 4231244 611236512 CML-RA COMP 5 0 CY14ME064Q2B (7C1446E5A) 4231244 611236507 CML-RA COMP 5 0 CY14ME064J2A (7C14EC46A) 4231244 611236510 CML-RA COMP 5 0 STRESS: STATIC LATCH-UP TESTING, 85C, 140mA CY14ME064Q1B (7C1446E9A) 4231244 611236512 CML-RA COMP 6 0 CY14MB064Q1B (7C1446B9A) 4231244 611236511 CML-RA COMP 6 0 STRESS: DYNAMIC LATCH-UP TESTING, 125C (3V part – 5.5V, 5V Part – 8V) CY14ME064Q1B (7C1446E9A) 4231244 611236512 CML-RA COMP 1 0 CY14MB064Q1B (7C1446B9A) 4231244 611236511 CML-RA COMP 1 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 15 Document No.001-85611 Rev.*A ECN # 5106807 Document History Page Document Title: (FAB 4) Document Number: Rev. ECN No. ** 3863005 *A 5106807 QTP 113005: 64K SERIAL NON-VOLATILE SRAM PRODUCT FAMILY S8 TECHNOLOGY, CMI 001-85611 Orig. of Description of Change Change NSR Initial spec release ILZ No Change. Sunset Review DCON Removed Distribution: WEB and Posting: None in the document history page. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 15