Document No.002-10646 Rev. ** ECN # 5075197 Cypress Semiconductor Product Qualification Report QTP#150407 VERSION ** January, 2016 1M Quad SPI nvSRAM Product Family S8TNV-5R Technology, CMI FAB 4 CY14V101PS 1-MBIT (128K X 8) QUAD SPI NVSRAM WITH REAL TIME CLOCK CY14V101QS 1-MBIT (128K X 8) QUAD SPI nvSRAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Becky Thomas Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Don Darling Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 14 Document No.002-10646 Rev. ** ECN # 5075197 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 071304 To qualify S8 SONOS technology and 4M nvSRAM devices CY14B104L /CY14B104N (7C14104AC base die) using S8TNV-5R, fabricated at Cypress Minnesota CMI (Fab4) Nov 2008 102204 To qualify Indus 1M serial nvSRAM using S8 technology at CMI (Fab4) Jun 2010 150407 To Qualify Quad SPI 1M nvSRAM Device Family using S8 technology at CMI (Fab4) Jan 2016 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 14 Document No.002-10646 Rev. ** ECN # 5075197 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To Qualify Quad SPI 1M nvSRAM Device Family using S8 technology at CMI (Fab4) Marketing Part #: CY14V101PS**, CY14V101QS** Device Description: 1-MBIT (128K X 8) QUAD SPI NVSRAM WITH and WITHOUT REAL TIME CLOCK, WITH EXTENDED INDUSTRIAL TEMPERATURE Cypress Division: Cypress Semiconductor Corporation – MPD TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 3 Metal Composition: Passivation Type and Thickness: Metal 1: 100A Ti / 3200A Al -0.5%Cu / 300A TiW Metal 2: 100A Ti / 3200A Al -0.5%Cu / 300A TiW Metal 3: 150A Ti / 7200A Al -0.5%Cu / 300A TiW 7000 +/- 2000A Nitride Generic Process Technology/Design Rule (-drawn): S8TNV-5R/0.13μm Gate Oxide Material/Thickness (MOS): SiO2 /110A & SiO2/32A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor -- Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4 / S8TNV-5 PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 16-pin SOIC CML-RA, UTL-UT 24-Ball FBGA BKK Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 14 Document No.002-10646 Rev. ** ECN # 5075197 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: SZ163 Mold Compound Flammability Rating: SOIC 16L Kyocera-KE-G3000DA UL94 V-0 Mold Compound Alpha Emission Rate: 0.001c/cm2-h Oxygen Rating Index: >28% 50% Lead Frame Designation: FMP Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Through Die Attach Supplier: Henkel Die Attach Material: QMI509/XEX58 Bond Diagram Designation 001-72731 Wire Bond Method: Thermosonic Wire Material/Size: 0.8mil CuPd Thermal Resistance Theta JA C/W: 96 C/W Package Cross Section Yes/No: Yes Assembly Process Flow: 001-86163 Name/Location of Assembly (prime) facility: CML-RA MSL LEVEL 3 REFLOW PROFILE 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA, Philippines Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 14 Document No.002-10646 Rev. ** ECN # 5075197 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Data Retention (Plastic) Endurance Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Pressure Cooker Test Temperature Cycle Electrostatic Discharge Human Body Model (ESDHBM) Electrostatic Discharge Charge Device Model (ESDCDM) Static Latch up Acoustic Microscopy Neutron Emission (SER) Neutron Single Latch-up (SEL) Test Condition (Temp/Bias) Result P/F 150 C, non-biased JESD22-A117 and JESD22-A103 MIL-STD-883, Method 883-1033 P Dynamic Operating Condition, Vcc = 3.60V, 150 C JESD22-A108 P Dynamic Operating Condition, Vcc = 3.60V, 150 C JESD22-A108 P JESD22-A102: 121 C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH) MIL-STD-883C, Method 1010, Condition C, -65 C to 150 C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH) (1,100V; 2,200V) JEDEC EIA/JESD22-A114-B P P P P (500V) JESD22-C101 P 85C, ±200 mA JESD78B J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH) 2.7V, room temperature, JESD89 P P 645 FIT/Mb Vccmax, Data Sheet max temperature, JESD89 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 14 2.98 FIT/DEV Document No.002-10646 Rev. ** ECN # 5075197 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 11,254 0 N/A N/A 0 PPM 3,895 devices / 627,316 device hours 0 0.7 170 9 FIT Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. K = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 14 Document No.002-10646 Rev. ** ECN # 5075197 Reliability Test Data QTP #: 071304 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 2.7V, Vcc Max CY14B104L (7C14104AC) 4811240 610819876 CML-RA 48 1222 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 48 1316 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 48 932 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA 48 813 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.7V, Vcc Max CY14B104L (7C14104AC) 4811240 610819876 CML-RA 500 120 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 500 120 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 500 119 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA 500 119 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY14B104L (7C14104AC) 4811240 610819876 CML-RA 80/500 10 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 80/500 10 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 80/500 10 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA 80/500 10 0 STRESS: ENDURANCE, 200K CYCLES, 90C CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 80 0 CY14B104L (7C14104AC) 4817305 610841260 CML-RA COMP 77 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 160 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA COMP 80 0 CY14B104L (7C14104AC) 4817306/4818074 CML-RA COMP 3307 0 STRESS: DATA RETENTION, 150C CY14B104L (7C14104AC) 4817306 610830615 CML-RA 1000 77 0 CY14B104L (WAFER) 4817306 610830615 CML-RA 1008 228 0 CY14B104L (7C14104AC) 4817305 610841260 CML-RA 1000 80 0 CY14B104L (WAFER) 4817305 610841260 CML-RA 1008 216 0 CY14B104L (7C14104AC) 4818074 N/A CML-RA 1000 80 0 CY14B104L (WAFER) 4818074 N/A CML-RA 1008 402 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 14 Document No.002-10646 Rev. ** ECN # 5075197 Reliability Test Data QTP #: 071304 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 8 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 8 0 CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 8 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 9 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 9 0 CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 9 0 STRESS: ESD-MACHINE MODEL, 200V CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 5 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 5 0 CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 5 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 1.98V, PRE COND 192 HR 30C/60%RH, MSL3 CY14B104L (7C14104AC) 4811240 610819876 CML-RA 128 77 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 128 80 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 128 77 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY14B104L (7C14104AC) 4807004 610812949 CML-RA 168 77 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 168 80 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 168 77 0 STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY14B104L (7C14104AC) 4807004 610812949 CML-RA 1000 77 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA 1000 80 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA 500 80 0 STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, 200mA CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 6 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA COMP 6 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 14 Document No.002-10646 Rev. ** ECN # 5075197 Reliability Test Data QTP #: 071304 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: AGE BOND CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 10 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 10 0 CY14B104L (WAFER) 4818074 N/A CML-RA COMP 10 0 CY14B104L (7C14104AC) 4807004 610812949 CML-RA COMP 15 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 15 0 CY14B104L (7C14104AC) 4814841 610832326 CML-RA COMP 15 0 STRESS: ACOUSTIC-MSL3 STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, FIT=550 FIT/Mbit @ 85C, Vcc Nom CY14B104L (7C14104AC) 4811240 610819876 CML-RA COMP 3 0 CY14B104L (7C14104AC) 4817306 610830615 CML-RA COMP 3 0 CY14B104L (7C14104AC) 4819437 610842294 CML-RA COMP 3 0 N/A CML-RA COMP 3 0 500 77 0 1000 76 0 STRESS: SER – NEUTRON/PROTON CY14B104L (7C14104AC) 4808220 STRESS: LOW TEMPERATURE OPERATING LIFE TEST, -30C, 2.7V, Vcc Max CY14B104L (7C14104AC) 4817306 610830615 CML-RA STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 2.7V, Vcc Max CY14B104L (7C14104AC) 4811240 610819876 CML-RA Company Confidential A printed copy of this document is considered uncontrolled. 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Page 9 of 14 Document No.002-10646 Rev. ** ECN # 5075197 Reliability Test Data QTP #: 102204 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.3V, Vcc Max CY14MB064Q2A (7C1436B5A) 4033346 611113629 CML-RA 48 631 0 CY14MB064J2 (7C14104B) 4033346 611113777 CML-RA 48 1461 0 CY14B101Q2A (7C1431B5A) 4034960 611109619 M-PHIL 48 1073 0 CY14B101Q1A (7C1431B9A) 4050477 611118869 CML-RA 48 883 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.3V, Vcc Max CY14B101Q2A (7C1431B5A) 4034960 611109619 M-PHIL 80 1050 0 CY14B101Q2A (7C1431B5A) 4034960 611109619 M-PHIL 168 130 0 CY14MB064Q2A (7C1436B5A) 4033346 611113629 CML-RA 80 618 0 CY14MB064Q2A (7C1436B5A) 4033346 611113629 CML-RA 168 194 0 CY14MB064J2 (7C14104B) 4033346 611113777 CML-RA 80 1442 0 CY14B101Q1A (7C1431B9A) 4050477 611118869 CML-RA 168 128 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY14B101Q1A (7C1431B9A) 4050477 611118869 CML-RA COMP 10 0 CY14ME064Q2A (7C1436E5A) 4050477 611118870 CML-RA COMP 10 0 STRESS: ENDURANCE, 1M CYCLES+168 HOURS DATA RETENTION CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 168 39 0 CY14E101PA (7C1431E3A) 4032722 611056066 CML-RA 168 41 0 STRESS: DATA RETENTION (150C) CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 500 80 0 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 1000 80 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA COMP 8 0 CY14E101Q2A (7C1431E5A) 4032722 611055560 CML-RA COMP 8 0 CY14E101J2 (7C1431ECA) 4032722 611056167 CML-RA COMP 8 0 CY14E101PA (7C1431E3A) 4032722 611056066 M-PHIL COMP 8 0 CY14B101PA (7C1431B3A) 4032722 611056060 M-PHIL COMP 8 0 CY14E101Q1A (7C1431E9A) 4032722 611055556 CML-RA COMP 8 0 CY14E101PA (7C1431E9A) 4034960 611109616 M-PHIL COMP 8 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 14 Document No.002-10646 Rev. ** ECN # 5075197 Reliability Test Data QTP #: 102204 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL, 500V CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA COMP 9 0 CY14E101PA (7C1431E3A) 4032722 611056066 M-PHIL COMP 9 0 CY14B101PA (7C1431B3A) 4032722 611056060 M-PHIL COMP 9 0 CY14E101Q1A (7C1431E9A) 4032722 611055556 CML-RA COMP 9 0 STRESS: ESD-MACHINE MODEL, 200V CY14E101Q2A (7C1431E5A) 4032722 611055560 CML-RA COMP 5 0 CY14E101PA (7C1431E9A) 4034960 611109616 M-PHIL COMP 5 0 CY14E101J2 (7C1431E3A) 4034960 611109614 M-PHIL COMP 5 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 168 80 0 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 288 80 0 STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 500 80 0 CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA 1000 80 0 STRESS: STATIC LATCH-UP TESTING, 125C, 140mA CY14B101Q2A (7C1431B5A) 4032722 611055561 CML-RA COMP 6 0 CY14B101Q1A (7C1431B9A) 4032722 611057658 M-PHIL COMP 6 0 CY14E101PA (7C1431E3A) 4032722 611056066 M-PHIL COMP 6 0 CY14B101PA (7C1431B3A) 4032722 611056060 M-PHIL COMP 6 0 CY14E101Q1A (7C1431E9A) 4032722 611055556 CML-RA COMP 6 0 CY14E101PA (7C1431E9A) 4034960 611109616 M-PHIL COMP 6 0 CY14B101PA (7C1431B3A) 4034960 611109618 M-PHIL COMP 6 0 4032722 611055561 CML-RA COMP 15 0 COMP 3 0 STRESS: ACOUSTIC-MSL3 CY14B101Q2A (7C1431B5A) STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, @ 85C, Vcc Nom CY14E101Q2A (7C14104B) 4034960 611109692 M-PHIL Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 14 Document No.002-10646 Rev. ** ECN # 5075197 Reliability Test Data QTP #: 150407 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: DATA RETENTION, 150C CY14V101PS-SF108XIES 4523443 611526355 CML-RA 216 80 0 CY14V101PS-SF108XIES 4523443 611526355 CML-RA 500 80 0 CY14V101PS-SF108XIES 4523443 611526355 CML-RA 1000 71 0 STRESS: ENDURANCE, 1.3 M CYCLES, 85C+ DRET, 150C CY14V101PS-SF108XIES 4523443 611522830 CML-RA 1.3 M Cycle 77 0 CY14V101PS-SF108XIES 4523443 611522830 CML-RA 144 77 0 CY14V101PS-SF108XIES 4523443 611522830 CML-RA 168 77 0 CY14V101PS-SF108XIES 4523443 611522830 CML-RA 500 77 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.6V, Vcc Max CY14V101PS-SF108XIES 4523443 611522830 CML-RA 48 693 0 CY14V101PS-SF108XIES 4523443 611526355 CML-RA 48 1339 0 CY14V101PS-SF108XIES 4523443 611540193 CML-RA 48 891 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.6V, Vcc Max CY14V101PS-SF108XIES 4523443 611522830 CML-RA 80 182 0 CY14V101PS-SF108XIES 4523443 611522830 CML-RA 500 179 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY14V101PS-SF108XIES 4523443 611522830 CML-RA 168 80 0 CY14V101PS-SF108XIES 4523443 611522830 CML-RA 288 80 0 STRESS: TEMPERATURE CYCLE COND. C, -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY14V101PS-SF108XIES 4523443 611522830 CML-RA 500 80 0 CY14V101PS-SF108XIES 4523443 611522830 CML-RA 1000 80 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY14V101PS-SF108XIES 4523443 611522830 CML-RA COMP 8 0 CY14V101PS-SF108XIES 4545393 611540193 CML-RA COMP 8 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY14V101PS-SF108XIES 4523443 611522830 CML-RA COMP 9 0 CY14V101PS-SF108XIES 4545393 611540193 CML-RA COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 14 Document No.002-10646 Rev. ** ECN # 5075197 Reliability Test Data QTP #: 150407 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP TESTING, 85C, 5.94V/3.3V, 200mA CY14V101PS-SF108XIES 4523443 611522830 CML-RA COMP 6 0 CY14V101PS-SF108XIES 4545393 611540193 CML-RA COMP 6 0 4523443 611522830 CML-RA COMP 15 0 COMP 3 0 COMP 3 0 STRESS: ACOUSTIC-MSL3 CY14V101PS-SF108XIES STRESS: SER – NEUTRON EMMISSION: 645 FIT/Mb at 2.7V, 25C CY14V101PS-SF108XIES 4523443 611522830 CML-RA STRESS: SEL – NEUTRON SINGLE LATCH UP: 2.98 FIT/DEVICE CY14V101PS-SF108XIES 4523443 611522830 CML-RA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 14 Document No.002-10646 Rev. ** ECN # 5075197 Document History Page Document Title: Document Number: QTP 150407: Quad SPI 1M nvSRAM Device Family using S8 technology at CMI (Fab4) 002-10646 Rev. ECN Orig. of No. Change ** 5075197 BECK Description of Change Initial Release Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 14