1N6509 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side of the power supply line and to ground (see Figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as highdensity packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. 14-PIN Ceramic DIP WWW . Microsemi .C OM DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • APPLICATIONS / BENEFITS • • • • • • • Hermetic Ceramic Package Isolated Diodes To Eliminate Cross-Talk Voltages High Breakdown Voltage VBR > 60 V at 10 µA Low Leakage IR< 100nA at 40 V Low Capacitance C < 8.0 pF Options for screening in accordance with MIL-PRF19500/474 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers. For example, designate MX1N6509 for a JANTX screen. MAXIMUM RATINGS • • • • • • • MECHANICAL AND PACKAGING Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2) Continuous Forward Current of 300 mA dc (Note 1 & 3) Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1) 400 mW Power Dissipation per Junction @ 25oC 600 mW Power Dissipation per Package @ 25oC (Note 4) Operating Junction Temperature range –65 to +150oC Storage Temperature range of –65 to +200oC NOTE 1: NOTE 2: NOTE 3: NOTE 4: High Frequency Data Lines RS-232 & RS-422 Interface Networks Ethernet: 10 Base T Computer I/O Ports LAN Switching Core Drivers IEC 61000-4 Compatible (see circuit in figure 1) 61000-4-2 ESD: Air 15 kV, contact 8 kW 61000-4-4 (EFT): 40 A – 5/50 ns 61000-4-5 (surge): 12 A 8/20 µs • • • • • 14-PIN Ceramic DIP Weight 2.05 grams (approximate) Marking: Logo, part number, date code Pin #1 to the left of the indent on top of package Carrier tubes; 25 pcs (standard) Each Diode Pulsed: PW = 100 ms max; duty cycle <20% o o Derate at 2.4 mA/ C above +25 C o o Derate at 4.8 mW/ C above +25 C ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified 1N6509 MAXIMUM FORWARD VOLTAGE VF2 IF = 500 mA (Note 1) MAXIMUM REVERSE CURRENT MAXIMUM CAPACITANCE (PIN TO PIN) IR1 VR = 40 V VR = 0 V F = 1 MHz Ct MAXIMUM FORWARD RECOVERY TIME tfr IF = 500 mA MAXIMUM REVERSE RECOVERY TIME trr IF = IR = 200 mA irr = 20 mA RL = 100 ohms V V µA pF ns ns 1 1.5 0.1 8.0 40 20 NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge. Copyright 2003 5-03-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6509 PART NUMBER MAXIMUM FORWARD VOLTAGE VF1 IF = 100 mA (Note 1) 1N6509 SCOTTSDALE DIVISION Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options WWW . Microsemi .C OM SYMBOLS & DEFINITIONS Symbol VBR VF DEFINITION Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. IR Ct SCHEMATIC PACKAGE DIMENSIONS CIRCUIT Supply rail (+VCC) I/O Port 1N6509 6509 GND (or -VCC) Steering Diode Application FIGURE 1 Copyright 2003 5-03-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2