IRF IRGPH50S

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Preliminary Data SheetPD - 9.760
IRGPH50S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz)
See Fig. 1 for Current vs. Frequency curve
VCES = 1200V
VCE(sat) ≤ 2.0V
G
@VGE = 15V, IC = 33A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
1200
57
33
110
110
±20
20
200
78
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
—
—
—
—
—
0.24
—
6 (0.21)
0.64
—
40
—
Units
°C/W
g (oz)
Revision 0
C-49
To Order
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IRGPH50S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
1200 —
—
V
VGE = 0V, IC = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
—
1.3
— V/°C VGE = 0V, IC = 1.0mA
—
1.7 2.0
IC = 33A
VGE = 15V
—
2.2
—
V
IC = 57A
See Fig. 2, 5
—
2.0
—
IC = 33A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-13
— mV/°C VCE = VGE, IC = 250µA
—
19
—
S
VCE = 100V, IC = 33A
—
— 250
µA
VGE = 0V, VCE = 1200V
—
— 1000
VGE = 0V, VCE = 1200V, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
72
16
19
62
77
1200
780
3.0
26
29
52
76
1300
2100
55
13
1900
140
24
Max. Units
Conditions
108
IC = 33A
24
nC VCC = 400V
See Fig. 8
30
VGE = 15V
—
TJ = 25°C
—
ns
IC = 33A, VCC = 960V
1800
VGE = 15V, RG = 5.0Ω
1200
Energy losses include "tail"
—
—
mJ See Fig. 9, 10, 11, 14
44
—
TJ = 150°C,
—
ns
IC = 33A, VCC = 960V
—
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 10, 14
—
nH Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Refer to Section D - page D-13
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P)
C-50
To Order
Pulse width 5.0µs,
single shot.