Previous Datasheet Index Next Data Sheet Preliminary Data SheetPD - 9.760 IRGPH50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve VCES = 1200V VCE(sat) ≤ 2.0V G @VGE = 15V, IC = 33A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 1200 57 33 110 110 ±20 20 200 78 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 0.64 — 40 — Units °C/W g (oz) Revision 0 C-49 To Order Previous Datasheet Index Next Data Sheet IRGPH50S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 1200 — — V VGE = 0V, IC = 250µA 20 — — V VGE = 0V, IC = 1.0A — 1.3 — V/°C VGE = 0V, IC = 1.0mA — 1.7 2.0 IC = 33A VGE = 15V — 2.2 — V IC = 57A See Fig. 2, 5 — 2.0 — IC = 33A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -13 — mV/°C VCE = VGE, IC = 250µA — 19 — S VCE = 100V, IC = 33A — — 250 µA VGE = 0V, VCE = 1200V — — 1000 VGE = 0V, VCE = 1200V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. 72 16 19 62 77 1200 780 3.0 26 29 52 76 1300 2100 55 13 1900 140 24 Max. Units Conditions 108 IC = 33A 24 nC VCC = 400V See Fig. 8 30 VGE = 15V — TJ = 25°C — ns IC = 33A, VCC = 960V 1800 VGE = 15V, RG = 5.0Ω 1200 Energy losses include "tail" — — mJ See Fig. 9, 10, 11, 14 44 — TJ = 150°C, — ns IC = 33A, VCC = 960V — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 10, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Refer to Section D - page D-13 Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-50 To Order Pulse width 5.0µs, single shot.