APT40GL120JU2 ISOTOP® Boost chopper Trench + Field Stop IGBT4 Power module K C G E K E G C ISOTOP VCES = 1200V IC = 40A @ Tc = 80°C Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits Low conduction losses Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 65 40 70 ±20 220 Tj = 150°C 70A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APT40GL120JU2 – Rev 1 October, 2012 Symbol VCES APT40GL120JU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 35A Tj = 150°C VGE = VCE , IC = 1.2mA VGE = 20V, VCE = 0V Min Typ 5.0 1.85 2.25 5.8 Min Typ Max Unit 250 2.25 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=35A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 35A RG = 12 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 35A RG = 12 TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 35A TJ = 25°C RG = 12 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 1950 155 115 pF 0.27 µC 130 20 300 ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 A Chopper diode ratings and characteristics VRRM IRM IF VF Test Conditions Min VR=1200V trr Reverse Recovery Time Qrr Reverse Recovery Charge Tc = 80°C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/µs 100 500 Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 Tj = 125°C Tj = 25°C Tj = 125°C 380 360 1700 www.microsemi.com Unit V Tj = 25°C Tj = 150°C DC Forward Current Diode Forward Voltage Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ µA A 3.1 V ns nC 2-6 APT40GL120JU2 – Rev 1 October, 2012 Symbol Characteristic APT40GL120JU2 Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.68 1.2 20 Unit °C/W V 175 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) Cathode 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-6 APT40GL120JU2 – Rev 1 October, 2012 ISOTOP® is a registered trademark of ST Microelectronics NV APT40GL120JU2 Typical Performance Curve Output Characteristics (VGE=15V) 70 Output Characteristics 70 60 TJ=25°C VGE=19V 50 TJ=150°C 40 IC (A) IC (A) 50 30 VGE=15V 40 30 20 20 10 10 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 70 E (mJ) 8 40 30 TJ=150°C 4 Eon Eoff 2 10 0 0 5 6 7 8 9 10 11 12 0 13 10 20 30 40 50 60 70 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 10 80 70 VCE = 600V VGE =15V IC = 35A TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V) VCE = 600V VGE = 15V RG =12 Ω TJ = 150°C 10 50 1 Energy losses vs Collector Current 12 TJ=25°C 60 IC (A) TJ = 150°C 60 Eoff 4 50 40 30 VGE=15V TJ=150°C RG=12 Ω 20 2 10 0 0 0 10 20 30 40 Gate Resistance (ohms) 50 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.9 IGBT 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APT40GL120JU2 – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.7 APT40GL120JU2 Forward Characteristic of diode VCE=600V D=50% RG=12 Ω TJ=150°C Tc=75°C ZVS 120 80 70 60 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 160 80 TJ=125°C 50 40 30 40 Hard switching 10 0 0 0 10 TJ=25°C 20 ZCS 20 30 40 IC (A) 50 60 0.0 70 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 Diode 0.9 0.7 0.5 0.6 0.4 0.2 0 0.00001 0.3 Single Pulse 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APT40GL120JU2 – Rev 1 October, 2012 Thermal Impedance (°C/W) 1.4 APT40GL120JU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 6-6 APT40GL120JU2 – Rev 1 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.