APT40N60JCU3 ISOTOP® Buck chopper Super Junction MOSFET Power Module D VDSS = 600V RDSon = 70m max @ Tj = 25°C ID = 40A @ Tc = 25°C Application AC and DC motor control Switched Mode Power Supplies Features G S A A S D G - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant ISOTOP Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS IFAV IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 600 40 30 120 ±20 70 290 20 1 1800 30 39 Unit V A V m W A mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-9 APT40N60JCU3 – Rev 2 October 2012 Symbol VDSS APT40N60JCU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 20A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 7015 2565 212 Max 25 250 70 3.9 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 40A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Resistive Switching VGS = 15V VBus = 380V ID = 40A RG = 1.8 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 40A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 40A, RG = 5Ω www.microsemi.com pF 259 29 nC 111 20 30 115 ns 10 670 980 1100 1206 µJ µJ 2-9 APT40N60JCU3 – Rev 2 October 2012 Symbol Ciss Coss Crss APT40N60JCU3 Chopper diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Min Typ 1.6 1.9 1.4 Max 1.8 V 250 500 44 Tj = 125°C Unit µA pF ns A nC ns nC A Thermal and package characteristics Symbol Characteristic Min Typ CoolMos Diode RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.43 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g Typical CoolMOS Performance Curve 0.5 0.4 0.35 0.9 0.7 0.3 0.25 0.5 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 Fig 1, Maximum Effective transient thermal Impedance, Junction to case vs Pulse Duration www.microsemi.com 3-9 APT40N60JCU3 – Rev 2 October 2012 Thermal Impedance (°C/W) 0.45 Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration APT40N60JCU3 45 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, Case Tem perature (°C) Figure 6, DC Drain Current vs Case Temperature www.microsemi.com 4-9 APT40N60JCU3 – Rev 2 October 2012 ID, DC Drain Current (A) 40 www.microsemi.com 5-9 APT40N60JCU3 – Rev 2 October 2012 APT40N60JCU3 APT40N60JCU3 www.microsemi.com 6-9 APT40N60JCU3 – Rev 2 October 2012 Typical Diode Performance Curve www.microsemi.com 7-9 APT40N60JCU3 – Rev 2 October 2012 APT40N60JCU3 APT40N60JCU3 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) Anode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 8-9 APT40N60JCU3 – Rev 2 October 2012 Dimensions in Millimeters and (Inches) APT40N60JCU3 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. 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