PD - 95443A Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free IRFR3707ZPbF IRFU3707ZPbF HEXFET® Power MOSFET VDSS RDS(on) max 9.5m: 30V Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3707Z Qg 9.6nC I-Pak IRFU3707Z Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage Max. Units 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 IDM Pulsed Drain Current 220 PD @TC = 25°C Maximum Power Dissipation 50 PD @TC = 100°C Maximum Power Dissipation 25 c f f Linear Derating Factor 0.33 TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds A W W/°C °C 300 (1.6mm from case) Thermal Resistance Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient g Typ. Max. Units ––– 3.0 °C/W ––– 50 ––– 110 Notes through are on page 11 www.irf.com 1 12/6/04 IRFR/U3707ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage ∆ΒVDSS/∆TJ RDS(on) 30 ––– ––– Breakdown Voltage Temp. Coefficient ––– 0.023 ––– Static Drain-to-Source On-Resistance ––– 7.5 9.5 ––– 10 12.5 V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.0 ––– mV/°C IDSS Drain-to-Source Leakage Current µA VDS = 24V, VGS = 0V nA VGS = 20V IGSS gfs Qg ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 71 ––– ––– ––– 9.6 14 Forward Transconductance Total Gate Charge e e VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V S VDS = 15V, ID = 12A Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.90 ––– Qgd Gate-to-Drain Charge ––– 3.5 ––– ID = 12A Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 2.6 ––– See Fig. 16 Qsw ––– 4.4 ––– Qoss Output Charge ––– 5.8 ––– td(on) Turn-On Delay Time ––– 8.0 ––– VDD = 16V, VGS = 4.5V tr Rise Time ––– 11 ––– ID = 12A td(off) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 3.3 ––– Ciss Input Capacitance ––– 1150 ––– Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 120 ––– VDS = 15V nC nC ns VGS = 4.5V VDS = 15V, VGS = 0V e Clamped Inductive Load VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy c d c Typ. Max. Units ––– 42 mJ ––– 12 A ––– 5.0 mJ Diode Characteristics Parameter IS Continuous Source Current Min. Typ. Max. Units f ––– 56 ––– ––– 220 showing the integral reverse p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V (Body Diode) ISM Pulsed Source Current c MOSFET symbol A (Body Diode) VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 25 38 ns Qrr Reverse Recovery Charge ––– 17 26 nC ton Forward Turn-On Time 2 Conditions ––– D G S e TJ = 25°C, IF = 12A, VDD = 15V di/dt = 100A/µs e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFR/U3707ZPbF 10000 1000 ID, Drain-to-Source Current (A) 100 BOTTOM TOP ID, Drain-to-Source Current (A) TOP 1000 VGS 10V 6.0V 4.5V 4.0V 3.3V 2.8V 2.5V 2.2V 10 1 0.1 2.2V 0.01 100 BOTTOM 10 2.2V 1 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.001 0.1 0.1 1 10 0.1 VDS, Drain-to-Source Voltage (V) 1 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (Α) VGS 10V 6.0V 4.5V 4.0V 3.3V 2.8V 2.5V 2.2V T J = 175°C 10 1 TJ = 25°C 0.1 VDS = 10V 20µs PULSE WIDTH 0.01 ID = 30A VGS = 10V 1.5 1.0 0.5 0 2 4 6 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRFR/U3707ZPbF 10000 6.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 12A C, Capacitance(pF) C oss = C ds + C gd Ciss 1000 Coss VDS= 24V VDS= 15V 5.0 4.0 3.0 2.0 1.0 Crss 100 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 2 4 6 8 10 12 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 1000.00 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100.00 T J = 175°C 10.00 1.00 TJ = 25°C 10 100µsec 1msec 1 VGS = 0V 0.10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10msec Tc = 25°C Tj = 175°C Single Pulse 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3707ZPbF 60 Limited By Package 50 ID, Drain Current (A) VGS(th) Gate threshold Voltage (V) 2.5 40 30 20 10 2.0 ID = 250µA 1.5 1.0 0 25 50 75 100 125 150 -75 -50 -25 175 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) 10 D = 0.50 1 0.20 0.10 R1 R1 0.05 0.1 τJ 0.02 0.01 τ1 τ2 τ2 Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.01 τJ τ1 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.823 0.000128 1.698 0.481 0.000845 0.016503 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U3707ZPbF 15V D.U.T RG + V - DD IAS 20V VGS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) DRIVER L VDS 200 ID TOP 3.7A 5.6A BOTTOM 12A 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current LD I AS VDS Fig 12b. Unclamped Inductive Waveforms + VDD D.U.T Current Regulator Same Type as D.U.T. VGS Pulse Width < 1µs Duty Factor < 0.1% 50KΩ 12V .2µF .3µF Fig 14a. Switching Time Test Circuit D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID Current Sampling Resistors Fig 13. Gate Charge Test Circuit VGS td(on) tr td(off) tf Fig 14b. Switching Time Waveforms 6 www.irf.com IRFR/U3707ZPbF D.U.T Driver Gate Drive P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRFR/U3707ZPbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput ( 2 Ploss = Irms × Rds(on) ) Power losses in the control switch Q1 are given by; + (Qg × Vg × f ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠ This can be expanded and approximated by; *dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Qoss Characteristic 8 www.irf.com IRFR/U3707ZPbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRF U120 12 916A 34 AS SEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRF U120 12 AS SEMBLY LOT CODE www.irf.com 34 DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE 9 IRFR/U3707ZPbF I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRF U120 WITH AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN THE AS S EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 919A 56 78 AS S EMBLY LOT CODE Note: "P" in as s embly line pos ition indicates "Lead-Free" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR PART NUMBE R INT ERNAT IONAL RECTIF IER LOGO IRFU120 56 AS SEMBLY LOT CODE 10 78 DATE CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WE EK 19 A = ASS EMBLY SIT E CODE www.irf.com IRFR/U3707ZPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.58mH, RG = 25Ω, IAS = 12A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 11