PHILIPS 74AUP1GU04

74AUP1GU04
Low-power unbuffered inverter
Rev. 01 — 10 August 2005
Product data sheet
1. General description
The 74AUP1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible families.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
The 74AUP1GU04 provides the single unbuffered inverting gate.
2. Features
■ Wide supply voltage range from 0.8 V to 3.6 V
■ High noise immunity
■ ESD protection:
◆ HBM JESD22-A114-C exceeds 2000 V
◆ MM JESD22-A115-A exceeds 200 V
◆ CDM JESD22-C101-C exceeds 1000 V
■ Low static power consumption; ICC = 0.9 µA (maximum)
■ Latch-up performance exceeds 100 mA per JESD 78 Class II
■ Inputs accept voltages up to 3.6 V
■ Multiple package options
■ Specified from −40 °C to +85 °C and −40 °C to +125 °C
74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
3. Quick reference data
Table 1:
Quick reference data
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3 ns.
Symbol
Parameter
tPHL, tPLH propagation delay
A to Y
Conditions
Min
Typ
Max
Unit
CL = 5 pF; RL = 1 MΩ;
VCC = 0.8 V
-
6.2
-
ns
CL = 5 pF; RL = 1 MΩ;
VCC = 1.1 V to 1.3 V
0.9
2.3
4.4
ns
CL = 5 pF; RL = 1 MΩ;
VCC = 1.4 V to 1.6 V
0.7
1.7
3.1
ns
CL = 5 pF; RL = 1 MΩ;
VCC = 1.65 V to 1.95 V
0.5
1.4
2.6
ns
CL = 5 pF; RL = 1 MΩ;
VCC = 2.3 V to 2.7 V
0.4
1.1
2.0
ns
CL = 5 pF; RL = 1 MΩ;
VCC = 3.0 V to 3.6 V
0.3
1.0
1.8
ns
input capacitance
Ci
power dissipation
capacitance
CPD
-
1.5
-
pF
VCC = 1.8 V; f = 10 MHz
[1] [2]
-
1.8
-
pF
VCC = 3.3 V; f = 10 MHz
[1] [2]
-
5.3
-
pF
[1]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
[2]
The condition is VI = GND to VCC.
4. Ordering information
Table 2:
Ordering information
Type number
Package
Temperature range Name
Description
Version
74AUP1GU04GW
−40 °C to +125 °C
TSSOP5
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
74AUP1GU04GM
−40 °C to +125 °C
XSON6
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1 × 1.45 × 0.5 mm
5. Marking
Table 3:
Marking
Type number
Marking code
74AUP1GU04GW
pD
74AUP1GU04GM
pD
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Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 10 August 2005
2 of 18
74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
6. Functional diagram
2
A
4
Y
1
2
mna108
4
mna109
Fig 1. Logic symbol
Fig 2. IEC logic symbol
VCC
540 Ω
50 Ω
A
Y
001aad073
Fig 3. Logic diagram
7. Pinning information
7.1 Pinning
U04
n.c.
1
A
2
GND
3
5
VCC
1
6
VCC
A
2
5
n.c.
GND
3
4
Y
U04
4
Y
001aab666
Fig 4. Pin configuration SOT353-1
(TSSOP5)
9397 750 14689
Product data sheet
n.c.
001aab667
Transparent top view
Fig 5. Pin configuration SOT886 (XSON6)
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Rev. 01 — 10 August 2005
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74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
7.2 Pin description
Table 4:
Pin description
Symbol
Pin
Description
TSSOP5
XSON6
n.c.
1
1
not connected
A
2
2
data input A
GND
3
3
ground (0 V)
Y
4
4
data output Y
n.c.
-
5
not connected
VCC
5
6
supply voltage
8. Functional description
8.1 Function table
Table 5:
Function table [1]
Input
Output
A
Y
L
H
H
L
[1]
H = HIGH voltage level;
L = LOW voltage level.
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Product data sheet
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Rev. 01 — 10 August 2005
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74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
9. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
IIK
input clamping
current
−0.5
+4.6
V
-
−50
mA
VI
input voltage
−0.5
+4.6
V
IOK
output clamping
current
-
±50
mA
VO
output voltage
−0.5
VCC + 0.5 V
IO
output current
-
±20
mA
ICC
quiescent supply
current
-
+50
mA
IGND
ground current
-
−50
mA
Tstg
storage temperature
−65
+150
°C
-
250
mW
[1]
VO > VCC or VO < 0 V
[1]
VO = 0 V to VCC
Tamb = −40 °C to +125 °C
total power
dissipation
Ptot
VI < 0 V
[2]
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
10. Recommended operating conditions
Table 7:
Recommended operating conditions
Symbol
Parameter
VCC
Conditions
Min
Max
Unit
supply voltage
0.8
3.6
V
VI
input voltage
0
3.6
V
VO
output voltage
0
VCC
V
Tamb
ambient temperature
−40
+125
°C
tr, tf
input rise and fall times
0
200
ns/V
VCC = 0.8 V to 3.6 V
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Product data sheet
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Rev. 01 — 10 August 2005
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74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
11. Static characteristics
Table 8:
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V
Tamb = 25 °C
VIH
HIGH-state input voltage
VCC = 0.8 V to 3.6 V
0.75 × VCC -
-
VIL
LOW-state input voltage
VCC = 0.8 V to 3.6 V
-
-
0.25 × VCC V
VOH
HIGH-state output voltage
VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.1
-
-
V
VOL
LOW-state output voltage
IO = −1.1 mA; VCC = 1.1 V
0.75 × VCC -
-
V
IO = −1.7 mA; VCC = 1.4 V
1.11
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.32
-
-
V
IO = −2.3 mA; VCC = 2.3 V
2.05
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.9
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.72
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.6
-
-
V
VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.1
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.3 × VCC
V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.31
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.31
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.31
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.44
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.31
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.44
V
ILI
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.1
µA
ICC
quiescent supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
0.5
µA
Ci
input capacitance
VCC = 0 V to 3.6 V; VI = GND or VCC
-
1.5
-
pF
Co
output capacitance
VO = GND; VCC = 0 V
-
1.8
-
pF
V
Tamb = −40 °C to +85 °C
VIH
HIGH-state input voltage
VCC = 0.8 V to 3.6 V
0.75 × VCC -
-
VIL
LOW-state input voltage
VCC = 0.8 V to 3.6 V
-
-
0.25 × VCC V
VOH
HIGH-state output voltage
VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.1
-
-
V
IO = −1.1 mA; VCC = 1.1 V
0.7 × VCC
-
-
V
IO = −1.7 mA; VCC = 1.4 V
1.03
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.30
-
-
V
IO = −2.3 mA; VCC = 2.3 V
1.97
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.85
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.67
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.55
-
-
V
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Product data sheet
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Rev. 01 — 10 August 2005
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74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
Table 8:
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VOL
VI = VIH or VIL
LOW-state output voltage
Min
Typ
Max
Unit
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.1
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.3 × VCC
V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.37
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.35
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.33
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.45
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.33
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.45
V
ILI
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.5
µA
ICC
quiescent supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
0.9
µA
V
Tamb = −40 °C to +125 °C
VIH
HIGH-state input voltage
VCC = 0.8 V to 3.6 V
0.75 × VCC -
-
VIL
LOW-state input voltage
VCC = 0.8 V to 3.6 V
-
0.25 × VCC V
VOH
HIGH-state output voltage
VI = VIH or VIL
VOL
LOW-state output voltage
-
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.11 -
-
V
IO = −1.1 mA; VCC = 1.1 V
0.6 × VCC
-
-
V
IO = −1.7 mA; VCC = 1.4 V
0.93
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.17
-
-
V
IO = −2.3 mA; VCC = 2.3 V
1.77
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.67
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.40
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.30
-
-
V
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.11
V
VI = VIH or VIL
IO = 1.1 mA; VCC = 1.1 V
-
-
0.33 × VCC V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.41
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.39
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.36
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.50
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.36
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.50
V
ILI
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.75
µA
ICC
quiescent supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
1.4
µA
9397 750 14689
Product data sheet
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Rev. 01 — 10 August 2005
7 of 18
74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
12. Dynamic characteristics
Table 9:
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7
Symbol
Parameter
Conditions
Min
Typ
VCC = 0.8 V
-
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
[1]
Max
Unit
6.2
-
ns
0.9
2.3
4.4
ns
0.7
1.7
3.1
ns
Tamb = 25 °C; CL = 5 pF
tPHL, tPLH
propagation delay A to Y
see Figure 6
VCC = 1.65 V to 1.95 V
0.5
1.4
2.6
ns
VCC = 2.3 V to 2.7 V
0.4
1.1
2.0
ns
VCC = 3.0 V to 3.6 V
0.3
1.0
1.8
ns
VCC = 0.8 V
-
9.6
-
ns
VCC = 1.1 V to 1.3 V
1.2
3.1
6.1
ns
VCC = 1.4 V to 1.6 V
1.0
2.3
4.0
ns
Tamb = 25 °C; CL = 10 pF
tPHL, tPLH
propagation delay A to Y
see Figure 6
VCC = 1.65 V to 1.95 V
0.8
1.9
3.3
ns
VCC = 2.3 V to 2.7 V
0.6
1.5
2.7
ns
VCC = 3.0 V to 3.6 V
0.5
1.3
2.4
ns
VCC = 0.8 V
-
13.0
-
ns
VCC = 1.1 V to 1.3 V
1.6
3.8
7.9
ns
VCC = 1.4 V to 1.6 V
1.3
2.8
4.9
ns
Tamb = 25 °C; CL = 15 pF
tPHL, tPLH
propagation delay A to Y
see Figure 6
VCC = 1.65 V to 1.95 V
1.0
2.3
4.0
ns
VCC = 2.3 V to 2.7 V
0.8
1.9
3.2
ns
VCC = 3.0 V to 3.6 V
0.7
1.6
2.9
ns
VCC = 0.8 V
-
23.2
-
ns
VCC = 1.1 V to 1.3 V
2.4
6.0
13.1
ns
VCC = 1.4 V to 1.6 V
2.0
4.2
7.6
ns
Tamb = 25 °C; CL = 30 pF
tPHL, tPLH
propagation delay A to Y
see Figure 6
VCC = 1.65 V to 1.95 V
1.7
3.6
6.1
ns
VCC = 2.3 V to 2.7 V
1.4
2.9
4.8
ns
VCC = 3.0 V to 3.6 V
1.2
2.5
4.3
ns
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Product data sheet
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Rev. 01 — 10 August 2005
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74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
Table 9:
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7
Symbol
Parameter
Conditions
Min
Typ
VCC = 0.8 V
-
VCC = 1.1 V to 1.3 V
-
VCC = 1.4 V to 1.6 V
[1]
Max
Unit
1.7
-
pF
1.6
-
pF
-
1.6
-
pF
VCC = 1.65 V to 1.95 V
-
1.8
-
pF
VCC = 2.3 V to 2.7 V
-
3.3
-
pF
VCC = 3.0 V to 3.6 V
-
5.3
-
pF
Tamb = 25 °C
[2] [3]
power dissipation capacitance f = 10 MHz
CPD
[1]
All typical values are measured at nominal VCC.
[2]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
[3]
The condition is VI = GND to VCC.
Table 10: Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7
Symbol
Parameter
−40 °C to +85 °C
Conditions
−40 °C to +125 °C
Unit
Min
Max
Min
Max
VCC = 1.1 V to 1.3 V
0.9
4.8
0.9
5.3
ns
VCC = 1.4 V to 1.6 V
0.6
3.4
0.6
3.8
ns
CL = 5 pF
tPHL, tPLH
propagation delay
A to Y
see Figure 6
VCC = 1.65 V to 1.95 V
0.5
2.9
0.5
3.2
ns
VCC = 2.3 V to 2.7 V
0.4
2.3
0.4
2.6
ns
VCC = 3.0 V to 3.6 V
0.3
2.1
0.3
2.4
ns
VCC = 1.1 V to 1.3 V
1.2
6.8
1.2
7.5
ns
VCC = 1.4 V to 1.6 V
0.9
4.6
0.9
5.1
ns
VCC = 1.65 V to 1.95 V
0.7
3.8
0.7
4.2
ns
VCC = 2.3 V to 2.7 V
0.6
3.1
0.6
3.5
ns
VCC = 3.0 V to 3.6 V
0.5
2.7
0.5
3.0
ns
CL = 10 pF
tPHL, tPLH
propagation delay
A to Y
see Figure 6
9397 750 14689
Product data sheet
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Rev. 01 — 10 August 2005
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74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
Table 10: Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7
Symbol
Parameter
−40 °C to +85 °C
Conditions
−40 °C to +125 °C
Unit
Min
Max
Min
Max
VCC = 1.1 V to 1.3 V
1.4
8.8
1.4
9.7
ns
VCC = 1.4 V to 1.6 V
1.1
5.7
1.1
6.3
ns
VCC = 1.65 V to 1.95 V
0.9
4.7
0.9
5.2
ns
VCC = 2.3 V to 2.7 V
0.8
3.7
0.8
4.1
ns
VCC = 3.0 V to 3.6 V
0.7
3.3
0.7
3.7
ns
CL = 15 pF
tPHL, tPLH
propagation delay
A to Y
see Figure 6
CL = 30 pF
tPHL, tPLH
propagation delay
A to Y
see Figure 6
VCC = 1.1 V to 1.3 V
2.2
14.8
2.2
16.3
ns
VCC = 1.4 V to 1.6 V
1.8
9.0
1.8
9.9
ns
VCC = 1.65 V to 1.95 V
1.5
7.2
1.5
8.0
ns
VCC = 2.3 V to 2.7 V
1.3
5.7
1.3
6.3
ns
VCC = 3.0 V to 3.6 V
1.1
5.1
1.1
5.7
ns
13. Waveforms
VI
VM
A input
GND
t PHL
t PLH
VOH
VM
Y output
VOL
mna640
Measurement points are given in Table 11.
Logic levels: VOL and VOH are typical output voltage drop that occur with the output load.
Fig 6. The data input (A) to output (Y) propagation delays
Table 11:
Measurement points
Supply voltage
Output
Input
VCC
VM
VM
VI
tr = tf
0.8 V to 3.6 V
0.5 × VCC
0.5 × VCC
VCC
≤ 3.0 ns
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Product data sheet
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74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
VCC
VEXT
5 kΩ
PULSE
GENERATOR
VI
VO
DUT
RT
CL
RL
001aac521
Test data is given in Table 12.
Definitions for test circuit:
RL = Load resistor
CL = Load capacitance including jig and probe capacitance
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator
Fig 7. Load circuitry for switching times
Table 12:
Test data
Supply voltage
Load
VEXT
VCC
CL
0.8 V to 3.6 V
5 pF, 10 pF,
5 kΩ or 1 MΩ open
15 pF and 30 pF
[1]
RL
[1]
tPZH, tPHZ
tPZL, tPLZ
GND
2 × VCC
For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times
and pulse width RL = 1 MΩ.
9397 750 14689
Product data sheet
tPLH, tPHL
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 10 August 2005
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74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
14. Additional characteristics
Rbias = 560 kΩ
VCC
0.47 µF
input
output
100 µF
VI
(f = 1 kHz)
A IO
GND
mna050
∆I
g fs = --------o∆V i
VO is constant.
Fig 8. Test set-up for measuring forward transconductance
001aad074
30
gfs
(mA/V)
20
10
0
0
1
2
3
4
VCC (V)
Tamb = 25 °C.
Fig 9. Typical forward transconductance as a function of supply voltage
9397 750 14689
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 10 August 2005
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74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
15. Application information
Some applications for the 74AUP1GU04 are:
• Linear amplifier (see Figure 10)
• Crystal oscillator (see Figure 11).
Remark: All values given are typical values unless otherwise specified.
R2
VCC
1 µF
R1
U04
ZL
mna052
ZL > 10 kΩ.
R1 ≥ 3 kΩ.
R2 ≤ 1 MΩ.
Open loop amplification: AOL = 20.
A OL
R1
1 + ------- ( 1 + A OL )
R2
Voltage amplification: A V = – ----------------------------------------- .
Vo(p-p) = VCC − 1.5 V centered at 0.5 × VCC.
Unity gain bandwidth product is 5 MHz.
Fig 10. Linear amplifier application
R1
R2
U04
C1
C2
out
mna053
C1 = 47 pF.
C2 = 22 pF.
R1 = 1 MΩ to 10 MΩ.
R2 optimum value depends on the frequency and required stability against changes in VCC or
average minimum ICC (ICC = 2 mA at VCC = 3.3 V and f = 10 MHz).
Fig 11. Crystal oscillator application
9397 750 14689
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 10 August 2005
13 of 18
74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
16. Package outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
E
D
SOT353-1
A
X
c
y
HE
v M A
Z
5
4
A2
A
(A3)
A1
θ
1
Lp
3
L
e
w M
bp
detail X
e1
0
1.5
3 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(1)
e
e1
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.1
0
1.0
0.8
0.15
0.30
0.15
0.25
0.08
2.25
1.85
1.35
1.15
0.65
1.3
2.25
2.0
0.425
0.46
0.21
0.3
0.1
0.1
0.60
0.15
7°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT353-1
REFERENCES
IEC
JEDEC
JEITA
MO-203
SC-88A
EUROPEAN
PROJECTION
ISSUE DATE
00-09-01
03-02-19
Fig 12. Package outline SOT353-1 (TSSOP5)
9397 750 14689
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 10 August 2005
14 of 18
74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
1
2
3
4×
(2)
L
L1
e
6
5
4
e1
e1
6×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
1.5
1.4
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
OUTLINE
VERSION
SOT886
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-07-15
04-07-22
MO-252
Fig 13. Package outline SOT886 (XSON6)
9397 750 14689
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 10 August 2005
15 of 18
74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
17. Abbreviations
Table 13:
Abbreviations
Acronym
Description
CMOS
Complementary Metal Oxide Semiconductor
TTL
Transistor Transistor Logic
HBM
Human Body Model
ESD
ElectroStatic Discharge
MM
Machine Model
CDM
Charged Device Model
18. Revision history
Table 14:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
74AUP1GU04_1
20050810
Product data sheet
-
9397 750 14689
-
9397 750 14689
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 10 August 2005
16 of 18
74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
19. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
20. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
22. Trademarks
21. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
23. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14689
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 10 August 2005
17 of 18
74AUP1GU04
Philips Semiconductors
Low-power unbuffered inverter
24. Contents
1
2
3
4
5
6
7
7.1
7.2
8
8.1
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 4
Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended operating conditions. . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Additional characteristics . . . . . . . . . . . . . . . . 12
Application information. . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 17
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information . . . . . . . . . . . . . . . . . . . . 17
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 10 August 2005
Document number: 9397 750 14689
Published in The Netherlands