3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A). 1.3 Applications Impedance converters in e.g. electret microphones and infra-red detectors VHF amplifiers in oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 30 V 0.4 - 7.8 V BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C VDS drain-source voltage VGSoff gate-source cut-off voltage ID = 1 A; VDS = 15 V IDSS drain current VGS = 0 V; VDS = 15 V 12 - 25 mA Ptot total power dissipation Tamb 25 C - - 250 mW yfs forward transfer admittance VGS = 0 V; VDS = 15 V 3 - 6.5 mS BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 2. Pinning information Table 2. Pinning Pin Description 1 source (s) 2 drain (d) 3 gate (g) Simplified outline Symbol 3 g d s sym054 1 2 3. Ordering information Table 3. Ordering information Type number Package BF545A Name Description Version - plastic surface mounted package; 3 leads SOT23 BF545B BF545C 4. Marking Table 4. Marking Type number Marking code[1] BF545A 20* BF545B 21* BF545C 22* [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. BF545A_BF545B_BF545C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 2 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage (DC) VGSO gate-source voltage open drain - 30 V VGDO gate-drain voltage (DC) open source - 30 V IG forward gate current (DC) - 10 mA - 250 mW Tamb 25 C [1] Min Max Unit - 30 V Ptot total power dissipation Tstg storage temperature 65 +150 C Tj junction temperature - 150 C [1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. mbb688 400 Ptot (mW) 300 200 100 0 0 Fig 1. 50 100 150 200 Tamb (°C) Power derating curve. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) [1] BF545A_BF545B_BF545C Product data sheet Conditions thermal resistance from junction to ambient [1] Typ Unit 500 K/W Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 3 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 7. Static characteristics Table 7. Static characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)GSS gate-source breakdown voltage IG = 1 A; VDS = 0 V 30 - - V VGSoff gate-source cut-off voltage ID = 200 A; VDS = 15 V BF545A 0.4 - 2.2 V BF545B 1.6 - 3.8 V BF545C 3.2 - 7.8 V 0.4 - 7.5 V BF545A 2 - 6.5 mA BF545B 6 - 15 mA ID = 1 A; VDS = 15 V IDSS drain current VGS = 0 V; VDS = 15 V BF545C IGSS gate-source leakage current 12 - 25 mA VGS = 20 V; VDS = 0 V - 0.5 1000 pA VGS = 20 V; VDS = 0 V; Tj = 125 C - - 100 nA yfs forward transfer admittance VGS = 0 V; VDS = 15 V 3 - 6.5 mS yos common source output admittance VGS = 0 V; VDS = 15 V - 40 - S BF545A_BF545B_BF545C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 4 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 8. Dynamic characteristics Table 8. Dynamic characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Ciss input capacitance VDS = 15 V; f = 1 MHz reverse transfer capacitance Crss common source input conductance gis Unit VGS = 10 V - 1.7 - pF VGS = 0 V - 3 - pF VGS = 10 V - 0.8 - pF VGS = 0 V - 0.9 - pF f = 100 MHz - 15 - S f = 450 MHz - 300 - S f = 100 MHz - 2 - mS f = 450 MHz - 1.8 - mS f = 100 MHz - 6 - S f = 450 MHz - 40 - S f = 100 MHz - 30 - S f = 450 MHz - 60 - S VDS = 15 V; f = 1 MHz VDS = 10 V; ID = 1 mA common source output conductance gos Max VDS = 10 V; ID = 1 mA common source reverse conductance grs Typ VDS = 10 V; ID = 1 mA common source transfer conductance gfs Min VDS = 10 V; ID = 1 mA mbb467 30 mbb466 6 Yfs (mS) IDSS (mA) 5.5 20 5 10 4.5 0 0 −2 −4 −6 VGSoff (V) 4 −8 0 VDS = 15 V; Tj = 25 C. Fig 2. Product data sheet −4 −6 VGSoff (V) −8 VDS = 15 V; VGS = 0 V; Tj = 25 C. Drain current as a function of gate-source cut-off voltage; typical values. BF545A_BF545B_BF545C −2 Fig 3. Forward transfer admittance as a function of gate-source cut-off voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 5 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) mbb465 80 Yos (μS) mbb464 300 RDSon (Ω) 60 200 40 100 20 0 0 −2 −4 −6 VGSoff (V) 0 −8 0 VDS = 15 V; VGS = 0 V; Tj = 25 C. Fig 4. −4 −6 VGSoff (V) −8 VDS = 100 mV; VGS = 0 V; Tj = 25 C. Common-source output admittance as a function of gate-source cut-off voltage; typical values. Fig 5. mbb462 6 ID (mA) −2 Drain-source on-resistance as a function of gate-source cut-off voltage; typical values. mbb463 6 ID (mA) (1) 4 4 (2) 2 2 (3) 0 0 0 4 8 12 16 VDS (V) −3 −2 BF545A BF545A Tj = 25 C. VDS = 15 V; Tj = 25 C. −1 0 VGS (V) (1) VGS = 0 V. (2) VGS = 0.5 V. (3) VGS = 1.0 V. Fig 6. Typical output characteristics. BF545A_BF545B_BF545C Product data sheet Fig 7. Typical input characteristics. All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 6 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) mbb460 16 ID (mA) mbb459 16 ID (mA) (1) 12 12 (2) (3) 8 8 (4) (5) 4 4 (6) 0 0 0 4 8 12 16 VDS (V) −6 −4 BF545B BF545B Tj = 25 C. VDS = 15 V; Tj = 25 C. −2 0 VGS (V) (1) VGS = 0 V. (2) VGS = 0.5 V. (3) VGS = 1.0 V. (4) VGS = 1.5 V. (5) VGS = 2.0 V. (6) VGS = 2.5 V. Fig 8. Typical output characteristics. BF545A_BF545B_BF545C Product data sheet Fig 9. Typical input characteristics. All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 7 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) mbb457 30 ID (mA) mbb456 30 ID (mA) (1) 20 20 (2) (3) 10 10 (4) (5) (6) 0 0 0 4 8 12 16 VDS (V) −8 −6 −4 BF545C BF545C Tj = 25 C. VDS = 15 V; Tj = 25 C. −2 0 VGS (V) (1) VGS = 0 V. (2) VGS = 1.0 V. (3) VGS = 2.0 V. (4) VGS = 3.0 V. (5) VGS = 4.0 V. (6) VGS = 5.0 V. Fig 10. Typical output characteristics. BF545A_BF545B_BF545C Product data sheet Fig 11. Typical input characteristics. All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 8 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) mbb461 103 ID (μA) 102 10 10 1 1 10−1 10−1 10−2 10−2 10−3 −3 −2 −1 mbb458 103 ID (μA) 102 10−3 0 VGS (V) −6 −4 −2 BF545A BF545B VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig 12. Drain current as a function of gate-source voltage; typical values. mbb455 103 ID (μA) 102 0 VGS (V) Fig 13. Drain current as a function of gate-source voltage; typical values. mbb454 −102 IG (pA) (1) −10 10 −1 1 (2) (4) 10−1 (3) −10−1 10−2 10−3 −8 −6 −4 −2 0 −10−2 0 4 VGS (V) 8 12 16 20 VDG (V) ID = 10 mA only for BF545B and BF545C; Tj = 25 C. BF545C VDS = 15 V; Tj = 25 C. (1) ID = 10 mA. (2) ID = 1 mA. (3) ID = 0.1 mA. (4) IGSS. Fig 14. Drain current as a function of gate-source voltage; typical values. BF545A_BF545B_BF545C Product data sheet Fig 15. Gate current as a function of drain-gate voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 9 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) mbb453 −103 mbb452 1 Crss (pF) 0.8 IGSS (pA) −102 0.6 −10 0.4 −1 0.2 10−1 −50 0 50 100 0 −10 150 Tj (°C) VDS = 0 V; VGS = 20 V. −8 −6 −4 −2 0 VGS (V) VDS = 15 V; Tj = 25 C. Fig 16. Gate current as a function of junction temperature; typical values. mbb451 3 Fig 17. Reverse transfer capacitance as a function of gate-source voltage; typical values. mbb468 102 yis (mS) Ciss (pF) 10 2 (1) 1 1 (2) 10−1 0 −10 −8 −6 −4 VDS = 15 V; Tj = 25 C. −2 0 VGS (V) 10−2 10 102 103 f (MHz) VDS = 10 V; ID = 1 mA; Tamb = 25 C. (1) bis. (2) gis. Fig 18. Typical input capacitance. BF545A_BF545B_BF545C Product data sheet Fig 19. Common-source input admittance; typical values. All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 10 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) mbb469 102 mbb470 10 yrs (mS) Yfs (mS) (1) 1 10 10−1 (1) (2) (2) 1 10−2 10−1 10 102 10−3 103 102 10 f (MHz) 103 f (MHz) VDS = 10 V; ID = 1 mA; Tamb = 25 C. VDS = 10 V; ID = 1 mA; Tamb = 25 C. (1) gfs. (1) brs. (2) bfs. (2) grs. Fig 20. Common-source forward transfer admittance; typical values. Fig 21. Common-source reverse transfer admittance; typical values. mbb471 10 yos (mS) (1) 1 10−1 (2) 10−2 10 102 103 f (MHz) VDS = 10 V; ID = 1 mA; Tamb = 25 C. (1) bos. (2) gos. Fig 22. Common-source output admittance; typical values. BF545A_BF545B_BF545C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 11 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 23. Package outline. BF545A_BF545B_BF545C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 12 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 10. Revision history Table 9. Revision history Document ID Release date BF545A_BF545B_BF545C v.4 20110915 Modifications: Data sheet status Change notice Supersedes Product data sheet - BF545A_BF545B_BF545C v.3 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. BF545A_BF545B_BF545C v.3 20040805 (9397 750 13391) Product data sheet - BF545A-B-C v.2 BF545A-B-C v.2 Product specification - - BF545A_BF545B_BF545C Product data sheet 19960729 All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 13 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. 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Export might require a prior authorization from national authorities. BF545A_BF545B_BF545C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 14 of 16 BF545A; BF545B; BF545C NXP Semiconductors N-channel silicon junction field-effect transistors) Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BF545A_BF545B_BF545C Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 September 2011 © NXP B.V. 2011. All rights reserved. 15 of 16 NXP Semiconductors BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors) 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 September 2011 Document identifier: BF545A_BF545B_BF545C