Data Sheet

SO
T8
83
PMZ290UNE2
20 V, N-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-8
-
8
V
ID
drain current
-
-
1.2
A
-
270
320
mΩ
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
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PMZ290UNE2
NXP Semiconductors
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
1
2
S
source
2
3
D
drain
Graphic symbol
D
3
Transparent
top view
G
DFN1006-3 (SOT883)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
PMZ290UNE2
Package
Name
Description
Version
DFN1006-3
DFN1006-3: leadless ultra small plastic package; 3 solder lands
SOT883
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMZ290UNE2
SC
PMZ290UNE2
Product data sheet
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20 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-8
8
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
-
1.2
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
0.8
A
-
4
A
[2]
-
350
mW
[1]
-
715
mW
-
5430
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
0.7
A
Source-drain diode
IS
source current
[1]
[2]
Tamb = 25 °C
[1]
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
PMZ290UNE2
Product data sheet
0
- 75
175
Fig. 2.
- 25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
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PMZ290UNE2
NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-017050
10
Limit RDSon = VDS/ID
ID
(A)
tp = 10 µs
1
100 µs
1 ms
DC; Tsp = 25 °C
10-1
10 ms
DC; Tamb = 25 °C; 1 cm2
10-2
10-1
Fig. 3.
100 ms
1
10
102
VDS (V)
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
PMZ290UNE2
Product data sheet
Min
Typ
Max
Unit
[1]
-
315
360
K/W
[2]
-
150
175
K/W
-
20
23
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
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PMZ290UNE2
NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-017051
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102
0.33
0.20
0.10
0.25
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-017052
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.50
0.33
0.20
0.10
0.25
10
10-3
0.05
0.02
0.01
0
10-2
10-1
1
10
102
tp (s)
103
2
FR4 PCB, mounting pad for drain = 1 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ290UNE2
Product data sheet
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20 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.45
0.7
0.95
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
5
µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-5
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C
-
270
320
mΩ
VGS = 4.5 V; ID = 1.2 A; Tj = 150 °C
-
400
475
mΩ
VGS = 2.5 V; ID = 1.0 A; Tj = 25 °C
-
360
480
mΩ
VGS = 1.8 V; ID = 0.12 A; Tj = 25 °C
-
470
680
mΩ
VGS = 1.5 V; ID = 0.01 A; Tj = 25 °C
-
600
1190
mΩ
VDS = 10 V; ID = 1.23 A; Tj = 25 °C
-
1.9
-
S
total gate charge
VDS = 10 V; ID = 1.0 A; VGS = 4.5 V;
-
0.8
1.4
nC
QGS
gate-source charge
Tj = 25 °C
-
0.1
-
nC
QGD
gate-drain charge
-
0.2
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
46
-
pF
Coss
output capacitance
Tj = 25 °C
-
9.6
-
pF
Crss
reverse transfer
capacitance
-
7.7
-
pF
td(on)
turn-on delay time
VDS = 10 V; ID = 1.0 A; VGS = 4.5 V;
-
6
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
10
-
ns
td(off)
turn-off delay time
-
11
-
ns
tf
fall time
-
4
-
ns
-
0.9
1.2
V
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
Source-drain diode
VSD
source-drain voltage
PMZ290UNE2
Product data sheet
IS = 0.7 A; VGS = 0 V; Tj = 25 °C
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NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-017053
4
VGS = 4.5 V
ID
(A)
aaa-017054
10-3
3.0 V
4.0 V
ID
(A)
3
2.5 V
10-4
2
2.0 V
1
(1)
10-5
1.8 V
(2)
(3)
1.5 V
0
Fig. 6.
1.2 V
0
1
2
3
VDS (V)
10-6
4
0
Tj = 25 °C
VDS = 5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
aaa-017055
1.2 V
1.0
VGS (V)
Sub-threshold drain current as a function of
gate-source voltage
aaa-017056
3
1.5 V
RDS(on)
(Ω)
1.5
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7.
3
0.5
RDS(on)
1.8 V
2
2
2.0 V
2.5 V
3.0 V
1
1
3.5 V
Tj = 150 °C
VGS = 4.5 V
0
0
1
2
3
ID (A)
0
4
Tj = 25 °C
Fig. 8.
Product data sheet
0
2
4
6
VGS (V)
8
ID = 1 A
Drain-source on-state resistance as a function
of drain current; typical values
PMZ290UNE2
Tj = 25 °C
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-017057
2.0
aaa-017058
2.0
ID
(A)
a
1.5
1.5
1.0
1.0
0.5
0
Tj = 150 °C
0
0.5
Tj = 25 °C
1
2
3
VGS (V)
0
-60
4
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
aaa-017059
1.5
0
aaa-017060
103
C
(pF)
VGS(th)
(V)
1.0
102
(1)
(1)
(2)
0.5
0
-60
0
60
(2)
10
(3)
(3)
120
Tj (°C)
1
10-1
180
1
ID = 250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(2) typical values
(3) minimum values
(1) Ciss
Product data sheet
VDS (V)
102
(2) Coss
(3) Crss
Fig. 12. Gate-source threshold voltage as a function of
ambient temperature
PMZ290UNE2
10
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMZ290UNE2
NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-017061
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
003aaa508
0
0
0.5
QG (nC)
Fig. 15. Gate charge waveform definitions
1.0
VDS = 10 V; ID = 0.5 A
Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-017062
4
IS
(A)
3
2
1
0
Tj = 150 °C
Tj = 25 °C
0
0.4
0.8
1.2
1.6
2.0
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
PMZ290UNE2
Product data sheet
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20 V, N-channel Trench MOSFET
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMZ290UNE2
Product data sheet
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20 V, N-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT883
JEITA
SC-101
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
Fig. 18. Package outline DFN1006-3 (SOT883)
PMZ290UNE2
Product data sheet
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20 V, N-channel Trench MOSFET
13. Soldering
1.3
0.7
R0.05 (12×)
solder lands
0.9
0.6
0.7
solder resist
solder paste
0.25
(2×)
occupied area
0.3
(2×)
0.3
0.4
(2×)
0.4
Dimensions in mm
sot883_fr
Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883)
PMZ290UNE2
Product data sheet
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20 V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMZ290UNE2 v.1
20150324
Product data sheet
-
-
PMZ290UNE2
Product data sheet
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20 V, N-channel Trench MOSFET
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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with the same product type number(s) and title. A short data sheet is
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data sheet shall define the specification of the product as agreed between
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or completeness of such information and shall have no liability for the
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PMZ290UNE2
Product data sheet
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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20 V, N-channel Trench MOSFET
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMZ290UNE2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
15 / 16
PMZ290UNE2
NXP Semiconductors
20 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ................................................... 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 12
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 March 2015
PMZ290UNE2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
16 / 16