HEF4011B
Quad 2-input NAND gate
Rev. 6 — 10 December 2015
Product data sheet
1. General description
The HEF4011B is a quad 2-input NAND gate. The outputs are fully buffered for the
highest noise immunity and pattern insensitivity to output impedance.
It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS
(usually ground). Unused inputs must be connected to VDD, VSS, or another input.
2. Features and benefits
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Specified from 40 C to +125 C
Complies with JEDEC standard JESD 13-B
Inputs and outputs are protected against electrostatic effects
3. Ordering information
Table 1.
Ordering information
All types operate from 40 C to +125 C
Type number
HEF4011BT
Package
Name
Description
Version
SO14
plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
4. Functional diagram
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Fig 1.
Functional diagram
Q<
DDQ
Fig 2.
Logic diagram (one gate)
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
5. Pinning information
5.1 Pinning
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9''
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966
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DDQ
Fig 3.
Pin configuration
5.2 Pin description
Table 2.
Pin description
Symbol
Pin
Description
nA
1, 5, 8, 12
input
nB
2, 6, 9, 13
input
nY
3, 4, 10, 11
output
VSS
7
ground (0 V)
VDD
14
supply voltage
6. Functional description
Table 3.
Function table[1]
Input
Output
nA
nB
nY
L
L
H
L
H
H
H
L
H
H
H
L
[1]
H = HIGH voltage level; L = LOW voltage level.
HEF4011B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 11
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol
Parameter
VDD
supply voltage
Conditions
VI < 0.5 V or VI > VDD + 0.5 V
Min
Max
0.5
+18
V
10
mA
IIK
input clamping current
VI
input voltage
IOK
output clamping current
II/O
input/output current
IDD
supply current
Tstg
storage temperature
65
+150
C
Tamb
ambient temperature
40
+125
C
Ptot
total power dissipation
-
500
mW
-
100
mW
0.5
VO < 0.5 V or VO > VDD + 0.5 V
[1]
VDD + 0.5 V
-
10
mA
-
10
mA
-
50
mA
Tamb = 40 C to + 125 C
SO14
P
-
Unit
power dissipation
[1]
per output
For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K.
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Symbol
Parameter
VDD
VI
Conditions
Min
Typ
Max
Unit
supply voltage
3
-
15
V
input voltage
0
-
VDD
V
Tamb
ambient temperature
in free air
40
-
+125
C
t/V
input transition rise and fall rate
VDD = 5 V
-
-
3.75
s/V
VDD = 10 V
-
-
0.5
s/V
VDD = 15 V
-
-
0.08
s/V
HEF4011B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 11
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
9. Static characteristics
Table 6.
Static characteristics
VSS = 0 V; VI = VSS or VDD; unless otherwise specified.
Symbol Parameter
Conditions
VDD
Tamb = 40 C Tamb = +25 C Tamb = +85 C Tamb = +125 C Unit
Min
VIH
VIL
VOH
VOL
IOH
IOL
HIGH-level
input voltage
LOW-level
input voltage
IDD
supply current
input
capacitance
HEF4011B
Product data sheet
Max
Min
Max
3.5
-
3.5
-
3.5
-
3.5
-
V
-
7.0
-
7.0
-
7.0
-
V
15 V
11.0
-
11.0
-
11.0
-
11.0
-
V
5V
-
1.5
-
1.5
-
1.5
-
1.5
V
10 V
-
3.0
-
3.0
-
3.0
-
3.0
V
15 V
-
4.0
-
4.0
-
4.0
-
4.0
V
5V
4.95
-
4.95
-
4.95
-
4.95
-
V
10 V
9.95
-
9.95
-
9.95
-
9.95
-
V
15 V
14.95
-
14.95
-
14.95
-
14.95
-
V
5V
-
0.05
-
0.05
-
0.05
-
0.05
V
10 V
-
0.05
-
0.05
-
0.05
-
0.05
V
15 V
-
0.05
-
0.05
-
0.05
-
0.05
V
VO = 2.5 V
5V
-
1.7
-
1.4
-
1.1
-
1.1
mA
VO = 4.6 V
5V
-
0.64
-
0.5
-
0.36
-
0.36
mA
VO = 9.5 V
10 V
-
1.6
-
1.3
-
0.9
-
0.9
mA
VO = 13.5 V
15 V
-
4.2
-
3.4
-
2.4
-
2.4
mA
VO = 0.4 V
5V
0.64
-
0.5
-
0.36
-
0.36
-
mA
VO = 0.5 V
10 V
1.6
-
1.3
-
0.9
-
0.9
-
mA
VO = 1.5 V
15 V
4.2
-
3.4
-
2.4
-
2.4
-
mA
15 V
-
0.1
-
0.1
-
1.0
-
1.0
A
all valid input 5 V
combinations; 10 V
IO = 0 A
15 V
-
0.25
-
0.25
-
7.5
-
7.5
A
-
0.5
-
0.5
-
15.0
-
15.0
A
-
1.0
-
1.0
-
30.0
-
30.0
A
-
-
-
7.5
-
-
-
-
pF
IO < 1 A
IO < 1 A
input leakage
current
Min
7.0
LOW-level
output voltage
LOW-level
output current
Max
10 V
IO < 1 A
HIGH-level
output current
Min
5V
HIGH-level
output voltage
II
CI
IO < 1 A
Max
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 11
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
10. Dynamic characteristics
Table 7.
Dynamic characteristics
Tamb = 25 C; for waveforms see Figure 4; for test circuit see Figure 5; unless otherwise specified.
Extrapolation formula[1]
Symbol Parameter
propagation delay
tpd
Typ
Max
Unit
-
55
110
ns
5V
14 + 0.23 CL
10 V
-
25
45
ns
12 + 0.16 CL
15 V
-
20
35
ns
5V
-
60
120
ns
9 + 0.42 CL
10 V
-
30
60
ns
6 + 0.28 CL
15 V
-
20
40
ns
5V
-
60
120
ns
9 + 0.42 CL
10 V
-
30
60
ns
6 + 0.28 CL
15 V
-
20
40
ns
LOW to HIGH output transition time 10 + 1.00 CL
tTLH
Min
28 + 0.55 CL
HIGH to LOW output transition time 10 + 1.00 CL
tTHL
VDD
[2]
[1]
The typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (CL in pF).
[2]
tpd is the same as tPLH and tPHL.
Table 8.
Dynamic power dissipation
VSS = 0 V; tr = tf 20 ns; Tamb = 25 C.
Symbol Parameter
PD
dynamic power dissipation
VDD
Typical formula
Where
5 V PD = 1300 fi + (fo CL) VDD (W)
2
10 V PD = 6000 fi + (fo CL) VDD (W)
2
fi = input frequency in MHz;
fo = output frequency in MHz;
15 V PD = 20100 fi + (fo CL) VDD2 (W) CL = output load capacitance in pF;
(fo CL) = sum of the outputs;
VDD = supply voltage in V.
HEF4011B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 11
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
11. Waveforms
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9,
WI
LQSXW
90
9
W3+/
92+
W3/+
RXWSXW
90
92/
W7+/
W7/+
DDJ
Measurement points are given in Table 9.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 4.
Propagation delay, output transition time
Table 9.
Measurement points
Supply voltage
Input
Output
VDD
VM
VM
5 V to 15 V
0.5VDD
0.5VDD
9''
*
9,
92
'87
&/
57
DDJ
Test data is given in Table 10.
Definitions for test circuit:
DUT = Device Under Test.
CL = load capacitance including jig and probe capacitance.
RT = termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig 5.
Test circuit for measuring switching times
Table 10.
Test data
Supply voltage
Input
VDD
VI
tr, tf
CL
5 V to 15 V
VSS or VDD
20 ns
50 pF
HEF4011B
Product data sheet
Load
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
6 of 11
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
12. Package outline
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Package outline SOT108-1 (SO14)
HEF4011B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 11
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
13. Abbreviations
Table 11.
Abbreviations
Acronym
Description
DUT
Device Under Test
14. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
HEF4011B v.6
20151210
Product data sheet
-
HEF4011B v.5
Modifications:
HEF4011B v.5
Modifications:
HEF4011B v.4
•
Type number HEF4011BP (SOT27-1) removed.
20111121
•
•
•
Product data sheet
-
HEF4011B v.4
Legal pages updated.
Changes in “General description” and “Features and benefits”.
Section “Applications” removed.
20110330
Product data sheet
-
HEF4011B_CNV v.3
HEF4011B_CNV v.3
19950101
Product specification
-
HEF4011B_CNV v.2
HEF4011B_CNV v.2
19950101
Product specification
-
-
HEF4011B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
8 of 11
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
15. Legal information
15.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
HEF4011B
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
9 of 11
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
HEF4011B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 December 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
10 of 11
HEF4011B
NXP Semiconductors
Quad 2-input NAND gate
17. Contents
1
2
3
4
5
5.1
5.2
6
7
8
9
10
11
12
13
14
15
15.1
15.2
15.3
15.4
16
17
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 1
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional description . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 December 2015
Document identifier: HEF4011B