DISCRETE SEMICONDUCTORS DATA SHEET BUW11F; BUW11AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. ook, halfpage APPLICATIONS • Converters 2 handbook, halfpage • Inverters • Switching regulators 1 • Motor control systems. MBB008 3 PINNING PIN DESCRIPTION 1 base 2 collector 3 emitter mb 1 2 Front view mounting base; electrically isolated 3 MSB012 Fig.1 Simplified outline (SOT199) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER collector-emitter peak voltage CONDITIONS MAX. UNIT VBE = 0 BUW11F 850 V BUW11AF 1000 V BUW11F 400 V BUW11AF 450 V 1.5 V 3 A collector-emitter voltage VCEsat collector-emitter saturation voltage ICsat collector saturation current open base BUW11F 2.5 A IC collector current (DC) BUW11AF see Figs 2 and 4 5 A ICM collector current (peak value) tp < 20 ms; see Fig.2 10 A Ptot total power dissipation Th ≤ 25 °C; see Fig.3 32 W tf fall time resistive load; see Figs 8 and 9 0.8 µs 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to external heatsink note 1 3.95 K/W note 2 3.05 K/W 35 K/W thermal resistance from junction to ambient Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO ICsat PARAMETER collector-emitter peak voltage CONDITIONS MIN. MAX. UNIT VBE = 0 BUW11F − 850 V BUW11AF − 1000 V BUW11F − 400 V BUW11AF − 450 V − 3 A collector-emitter voltage open base collector saturation current BUW11F − 2.5 A IC collector current (DC) see Figs 2 and 4 − 5 A ICM collector current (peak value) tp < 20 ms; see Fig.2 − 10 A BUW11AF IB base current (DC) − 2 A IBM base current (peak value) tp < 20 ms − 4 A Ptot total power dissipation Th ≤ 25 °C; see Fig.3; note 1 − 32 W Th ≤ 25 °C; see Fig.3; note 2 − 41 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL PARAMETER TYP. MAX. UNIT VisolM isolation voltage from all terminals to external heatsink (peak value) − 1500 V Cisol isolation capacitance from collector to external heatsink − 21 pF 1997 Aug 14 3 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER ICES collector-emitter sustaining voltage BUW11F BUW11AF collector-emitter saturation voltage BUW11F BUW11AF base-emitter saturation voltage BUW11F BUW11AF collector saturation current BUW11F BUW11AF collector-emitter cut-off current IEBO hFE emitter-base cut-off current DC current gain VCEsat VBEsat ICsat CONDITIONS IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 5 and 6 MIN. TYP. MAX. UNIT 400 450 − − − − V V IC = 3 A; IB = 600 mA IC = 2.5 A; IB = 500 mA − − − − 1.5 1.5 V V IC = 3 A; IB = 600 mA IC = 2.5 A; IB = 500 mA VCE = 1.5 V − − − − 1.4 1.4 V V − − − − − − − − 3 2.5 1 2 A A mA mA − 10 10 − 18 20 10 35 35 mA ICon = 3 A; IBon = −IBoff = 600 mA ICon = 2.5 A; IBon = −IBoff = 500 mA − − − − 1 1 µs µs ICon = 3 A; IBon = −IBoff = 600 mA ICon = 2.5 A; IBon = −IBoff = 500 mA − − − − 4 4 µs µs ICon = 3 A; IBon = −IBoff = 600 mA ICon = 2.5 A; IBon = −IBoff = 500 mA − − − − 0.8 0.8 µs µs ICon = 3 A; IB = 600 mA; VCL = 250 V; Tc = 100 °C ICon = 2.5 A; IB = 500 mA; VCL = 300 V; Tc = 100 °C − 2 2.5 µs − 2 2.5 µs ICon = 3 A; IB = 600 mA; VCL = 250 V; Tc = 100 °C ICon = 2.5 A; IB = 500 mA; VCL = 300 V; Tc = 100 °C − 200 300 ns − 200 300 ns VCE = VCESMmax; VBE = 0; note 1 VCE = VCESMmax; VBE = 0; Tj = 125 °C; note 1 VEB = 9 V; IC = 0 VCE = 5 V; IC = 5 mA; see Fig.7 VCE = 5 V; IC = 0.5 A; see Fig.7 Switching times resistive load (Figs 8 and 9) ton ts tf turn-on time BUW11F BUW11AF storage time BUW11F BUW11AF fall time BUW11F BUW11AF Switching times inductive load (Figs 10 and 11) ts storage time BUW11F BUW11AF tf fall time BUW11F BUW11AF Note 1. Measured with a half-sinewave voltage (curve tracer). 1997 Aug 14 4 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUW11F; BUW11AF MGB930 102 IC (A) ICM max 10 IC max II 1 10−1 I 10−2 BUW11F BUW11AF 10−3 10−4 1 10 102 Mounted without heatsink compound and 30 ±5 N force on centre of package. Tmb < 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. Fig.2 Forward bias SOAR. 1997 Aug 14 5 103 VCE (V) 104 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF MGK674 MGB894 5 120 handbook, halfpage handbook, halfpage IC (A) Ptot max 4 (%) 80 3 2 40 BUW11F BUW11AF 1 0 0 0 50 100 Th (oC) 0 150 400 800 VCE (V) 1200 VBE = −1 to −5 V; Tc ≤ 100 °C. Fig.3 Power derating curve. andbook, halfpage Fig.4 Reverse bias SOAR. handbook,IC halfpage + 50 V MGE239 (mA) 100 to 200 Ω 250 L 200 horizontal oscilloscope 100 vertical 6V 30 to 60 Hz Fig.5 1997 Aug 14 300 Ω 1Ω 0 MGE252 Test circuit for collector-emitter sustaining voltage. Fig.6 6 VCE (V) min VCEOsust Oscilloscope display for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF MBC095 2 10halfpage handbook, VCC handbook, halfpage hFE VCE = 5 V 1V RL VIM 10 RB 0 D.U.T. tp MGE244 T 1 10−2 10−1 1 102 10 IC (A) VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. Tj = 125 °C. Fig.7 DC current gain; typical values. handbook, halfpage Fig.8 Test circuit resistive load. MBB731 tr ≤30 ns IB on 90% IB 10% VCC andbook, halfpage t IB off LC +IB IC on 90% VCL LB D.U.T. −VBE IC MGE246 10% ton tf t ts VCL = up to 1000 V; VCC = 30 V; VBE = −1 V to −5 V; LB = 1 µH; LC = 200 µH. tr ≤ 20 ns. Fig.9 1997 Aug 14 Switching time waveforms with resistive load. Fig.10 Test circuit inductive load and reverse bias SOAR. 7 Philips Semiconductors Product specification Silicon diffused power transistors handbook, halfpage BUW11F; BUW11AF tr IB on 90% IB 10% t −IB off IC on 90% IC 10% ts toff t tf MGE238 Fig.11 Switching time waveforms with inductive load. 1997 Aug 14 8 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line) SOT199 E E1 m A A1 P α q D L1 Q b1 L 1 2 3 e b c w M e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D E E1 e e1 L mm 5.2 4.8 3.4 3.0 1.2 1.0 2.1 1.9 0.6 0.5 21.5 20.5 15.3 14.7 7.8 6.8 5.45 10.9 16.5 15.7 L1 (1) 3.7 3.3 m P Q q w α 0.8 0.6 3.3 3.1 2.1 1.9 6.2 5.8 0.4 45° Note 1. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT199 1997 Aug 14 EUROPEAN PROJECTION ISSUE DATE 97-06-27 9 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 10 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF NOTES 1997 Aug 14 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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