PANASONIC DZ2S10000L

DZ2S100
Silicon epitaxial planar type
Unit: mm
For constant voltage / For surge absorption circuit
DZ2J100 in SSMini2 type package
 Features
 Excellent rising characteristics of zener current Iz
 Low zener operating resistance RZ
 Halogen-free / RoHs compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: NJ, NU
 Packaging
DZ2S100×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
IFRM
200
mA
Total power dissipation *1
PT
150
mW
Electrostatic discharge *2
ESD
±8
kV
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Repetitive peak forward current
1: Cathode
2: Anode
Panasonic
JEITA
Code
SSMini2-F5-B
SC-79
SOD-523
Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm)
Solder in (0.8 mm × 0.6 mm)
*2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)
 Common Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
1.0
V
10.50
V
Forward voltage
VF
IF = 10 mA
Zener voltage *1, 2, 4
VZ
IZ = 5 mA
Zener operating resistance
RZ
IZ = 5 mA
30
W
Zener rise operating resistance
RZK
IZ = 0.5 mA
60
W
0.05
mA
Reverse current
IR
VR = 7 V
Temperature coefficient of zener voltage *3
SZ
IZ = 5 mA
9.50
7.2
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2 : VZ guaranteed 20 ms after current flow.
*3 : Tj = 25°C to 150°C
*4 : Rank classification
Code
M
0
Rank
M
No-rank
VZ
9.75 to 10.25
9.50 to 10.50
Marking Symbol
NU
NJ
Publication date: July 2012
Ver. DED
1
DZ2S100
IF  VF
IZ  VZ
Ta = 25°C
Ta = 25°C
1
10−1
Reverse current IR (mA)
10
1
10−1
10−2
10−2
0
0.4
0.8
10−3
1.2
Forward voltage VF (V)
0
5
10
100
6
4
2
0
0
2
4
Total power dissipation PT (mW)
Thermal resistance Rth (°C/W)
80
120
6
8
Zener current IZ (mA)
(1)
Mounted on glass epoxy print board.
(45 mm × 45 mm × 1 mm)
Solder in : 0.8 mm × 0.6 mm
50
160
Ambient temperature Ta (°C)
200
8
15
10
5
0
10
0
(2)
102
10
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(45 mm × 45 mm × 1 mm)
Solder in : 0.8 mm × 0.6 mm
10−1
10
Time t (s)
Ver. DED
4
6
8
PZSM  tW
Rth(j-l) = 80°C/W
1
10−3
2
Reverse voltage VR (V)
DZ2S__PZSM-tW
Rth  t
100
6
Ct  VR
8
103
150
4
Ta = 25°C
PT  Ta
200
2
Reverse voltage VR (V)
DZ2S100_Ct-VR
DZ2S__Rth-t
250
40
0
20
DZ2S__ PT-Ta
0
10−11
10
Zener current IZ (mA)
0
25
Terminal capacitance Ct (pF)
Temparature coefficient of zener voltage SZ (mV/°C)
Zener operating resistance RZ (Ω)
1
20
10−9
SZ  IZ
Ta = 25°C
1
0.1
15
10−7
DZ2S100_SZ-IZ
RZ  IZ
10
10
Zener voltage VZ (V)
DZ2S100_RZ-IZ
2
Ta = 25°C
10−5
10
Zener current IZ (mA)
Forward current IF (mA)
102
10−3
IR  VR
102
103
Non-repetitive reverse surge power dissipation PZSM (W)
103
DZ2S100_IR-VR
DZ2S100_IZ-VZ
DZ2S100_IF-VF
102
Ta = 25°C
10
1
10−1 2
10
103
Pulse width tW (µs)
104
DZ2S100
SSMini2-F5-B
Unit: mm
0.80 +0.05
−0.03
0.13 +0.05
−0.02
1.60 ±0.05
1.20 +0.05
−0.03
2
5°
0 to 0.05
1
0.20 ±0.05
0.30 ±0.05
(0.15)
0.60 +0.05
−0.03
5°
 Land Pattern (Reference) (Unit: mm)
Ver. DED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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