Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word by Suspending Programming of Any Other Byte/Word Low-power Operation – 30 mA Active – 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization Sector Lockdown Support TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register Description The AT49BV/LV16X(T) is a 3.0-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP, 45-ball and 48-ball CBGA packages. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 2.65V power supply, making it ideally suited for in-system programming. 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory AT49BV160 AT49LV160 AT49BV160T AT49BV161 AT49LV161 AT49BV161T AT49LV161T Pin Configurations Pin Name Function A0 - A19 Addresses CE Chip Enable OE Output Enable WE Write Enable RESET Reset RDY/BUSY READY/BUSY Output VPP Write Protection and Power Supply for Accelerated Program/Erase Operations I/O0 - I/O14 Data Inputs/Outputs I/O15 (A-1) I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) BYTE Selects Byte or Word Mode NC No Connect VCCQ Output Power Supply Rev. 1427L–FLASH–02/03 1 TSOP Top View Type 1 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RESET VPP NC A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 CBGA Top View 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ GND I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE GND CE A0 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 7 8 A19 A7 A4 A17 A5 A2 A6 A3 A1 I/O2 I/O8 CE A0 I/O12 I/O3 I/O9 I/O0 GND I/O4 VCC I/O10 I/O1 OE 2 3 4 5 A13 A11 A8 VPP A14 A10 WE RST A15 A12 A9 A16 I/O14 I/O5 I/O11 VCCQ I/O15 I/O6 I/O7 I/O13 A B A18 C D AT49BV/LV160(T) E F GND TSOP Top View Type 1 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE RESET VPP NC RDY/BUSY A18 A17 A7 A6 A5 A4 A3 A2 A1 6 1 CBGA Top View 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE GND I/O15/A-1 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 OE GND CE A0 1 2 A3 3 4 5 6 A7 RDY/BUSY WE A9 A13 A4 A17 NC RESET A8 A12 A2 A6 A18 VPP A10 A14 A1 A5 NC A19 A11 A15 A0 I/O0 I/O2 I/O5 I/O7 A16 CE I/O8 I/O10 I/O12 I/O14 BYTE OE I/O9 I/O11 VCC I/O13 I/O15 /A-1 VSS I/O1 I/O3 I/O4 I/O6 VSS A B C D AT49BV/LV161(T) E F G H AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector. (See “Sector Lockdown” section.) To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the Erase or Program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The end of a program or an erase cycle is detected by the Ready/Busy pin, Data Polling or by the toggle bit. The VPP pin provides data protection and faster programming. When the VPP input is below 0.8V, the program and erase functions are inhibited. When VPP is at 1.65V or above, normal program and erase operations can be performed. With VPP at 5.0V or 12.0V, the program and erase operations are accelerated. A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase, Erase Suspend/Resume, and Program Suspend/Resume commands will not work while in this mode; if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code. When using the AT49BV/LV160(T) pinout configuration, the device always operates in the word mode. In the AT49BV/LV161(T) configuration, the BYTE pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active and controlled by CE and OE. If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tristated, and the I/O15 pin is used as an input for the LSB (A-1) address function. 3 1427L–FLASH–02/03 Block Diagram I/O0 - I/O15/A-1 INPUT BUFFER INPUT BUFFER IDENTIFIER REGISTER STATUS REGISTER DATA REGISTER A0 - A19 OUTPUT MULTIPLEXER OUTPUT BUFFER CE WE OE RESET BYTE COMMAND REGISTER ADDRESS LATCH DATA COMPARATOR Y-DECODER Y-GATING RDY/BUSY WRITE STATE MACHINE PROGRAM/ERASE VOLTAGE SWITCH VPP VCC GND X-DECODER 4 MAIN MEMORY AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) Device Operation READ: The AT49BV/LV16X(T) is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins are asserted on the outputs. The outputs are put in the high-impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. COMMAND SEQUENCES: When the device is first powered on, it will be reset to the read or standby mode, depending upon the state of the control line inputs. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the “Command Definition in Hex” table on page 13 (I/O8 - I/O15 are don’t care inputs for the command codes). The command sequences are written by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Standard microprocessor write timings are used. The address locations used in the command sequences are not affected by entering the command sequences. RESET: A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET input halts the present device operation and puts the outputs of the device in a high-impedance state. When a high level is reasserted on the RESET pin, the device returns to the read or standby mode, depending upon the state of the control inputs. ERASURE: Before a byte/word can be reprogrammed, it must be erased. The erased state of memory bits is a logical “1”. The entire device can be erased by using the Chip Erase command or individual sectors can be erased by using the Sector Erase command. CHIP ERASE: The entire device can be erased at one time by using the six-byte chip erase software code. After the chip erase has been initiated, the device will internally time the erase operation so that no external clocks are required. The maximum time to erase the chip is tEC. If the sector lockdown has been enabled, the chip erase will not erase the data in the sector that has been locked out; it will erase only the unprotected sectors. After the chip erase, the device will return to the read or standby mode. SECTOR ERASE: As an alternative to a full chip erase, the device is organized into 39 sectors (SA0 - SA38) that can be individually erased. The Sector Erase command is a six-bus cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while the 30H data input command is latched on the rising edge of WE. The sector erase starts after the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will automatically time to completion. The maximum time to erase a sector is tSEC. When the sector programming lockdown feature is not enabled, the sector will erase (from the same Sector Erase command). An attempt to erase a sector that has been protected will result in the operation terminating in 2 µs. BYTE/WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logical “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the internal device command register and is a four-bus cycle operation. The device will automatically generate the required internal program pulses. 5 1427L–FLASH–02/03 Any commands written to the chip during the embedded programming cycle will be ignored. If a hardware reset happens during programming, the data at the location being programmed will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle time. The Data Polling feature or the Toggle Bit feature may be used to indicate the end of a program cycle. If the erase/program status bit is a “1”, the device was not able to verify that the erase or program operation was performed successfully. VPP PIN: The circuitry of the AT49BV/LV16X(T) is designed so that the device can be programmed or erased from the VCC power supply or from the VPP input pin. When VPP is greater than 1.65V and less than or equal to the VCC pin, the device selects the VCC supply for programming and erase operations. When the VPP pin is greater than the VCC supply, the device will select the VPP input as the power supply for programming and erase operations. The device will allow for some variations between the VPP input and the VCC power supply in its selection of VCC or VPP for program or erase operations. If the VPP pin is within 0.3V of VCC for 2.65V < VCC < 3.6V, then the program or erase operations will use VCC and disregard the VPP input signal. When the VPP signal is used for program and erase operations, the VPP must be in the 5V ± 0.5V or 12V ± 0.5V range to ensure proper operation. The Vpp pin cannot be left floating. PROGRAM/ERASE STATUS: The device provides several bits to determine the status of a program or erase operation: I/O2, I/O3, I/O5, I/O6 and I/O7. The “Status Bit Table” on page 12 and the following four sections describe the function of these bits. To provide greater flexibility for system designers, the AT49BV/LV16X(T) contains a programmable configuration register. The configuration register allows the user to specify the status bit operation. The configuration register can be set to one of two different values, “00” or “01”. If the configuration register is set to “00”, the part will automatically return to the read mode after a successful program or erase operation. If the configuration register is set to a “01”, a Product ID Exit command must be given after a successful program or erase operation before the part will return to the read mode. It is important to note that whether the configuration register is set to a “00” or to a “01”, any unsuccessful program or erase operation requires using the Product ID Exit command to return the device to read mode. The default value (after power-up) for the configuration register is “00”. Using the four-bus cycle Set Configuration Register command as shown in the “Command Definition in Hex” table on page 13, the value of the configuration register can be changed. Voltages applied to the RESET pin will not alter the value of the configuration register. The value of the configuration register will affect the operation of the I/O7 status bit as described below. DATA POLLING: The AT49BV/LV16X(T) features Data Polling to indicate the end of a program cycle. If the status configuration register is set to a “00”, during a program cycle an attempted read of the last byte/word loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. During a chip or sector erase operation, an attempt to read the device will give a “0” on I/O7. Once the program or erase cycle has completed, true data will be read from the device. Data Polling may begin at any time during the program cycle. Please see “Status Bit Table” on page 12 for more details. 6 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) If the status bit configuration register is set to a “01”, the I/O7 status bit will be low while the device is actively programming or erasing data. I/O7 will go high when the device has completed a program or erase operation. Once I/O7 has gone high, status information on the other pins can be checked. The Data Polling status bit must be used in conjunction with the erase/program and VPP status bit as shown in the algorithm in Figures 1 and 2 on page 10. TOGGLE BIT: In addition to Data Polling, the AT49BV/LV16X(T) provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the memory will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. Please see “Status Bit Table” on page 12 for more details. The toggle bit status bit should be used in conjunction with the erase/program and VPP status bit as shown in the algorithm in Figures 3 and 4 on page 11. ERASE/PROGRAM STATUS BIT: The device offers a status bit on I/O5, which indicates whether the program or erase operation has exceeded a specified internal pulse count limit. If the status bit is a “1”, the device is unable to verify that an erase or a byte/word program operation has been successfully performed. The device may also output a “1” on I/O5 if the system tries to program a “1” to a location that was previously programmed to a “0”. Only an erase operation can change a “0” back to a “1”. If a program (Sector Erase) command is issued to a protected sector, the protected sector will not be programmed (erased). The device will go to a status read mode and the I/O5 status bit will be set high, indicating the program (erase) operation did not complete as requested. Once the erase/program status bit has been set to a “1”, the system must write the Product ID Exit command to return to the read mode. The erase/program status bit is a “0” while the erase or program operation is still in progress. Please see “Status Bit Table” on page 12 for more details. VPP STATUS BIT: The AT49BV/LV16X(T) provides a status bit on I/O3, which provides information regarding the voltage level of the VPP pin. During a program or erase operation, if the voltage on the VPP pin is not high enough to perform the desired operation successfully, the I/O3 status bit will be a “1”. Once the VPP status bit has been set to a “1”, the system must write the Product ID Exit command to return to the read mode. On the other hand, if the voltage level is high enough to perform a program or erase operation successfully, the VPP status bit will output a “0”. Please see “Status Bit Table” on page 12 for more details. SECTOR LOCKDOWN: Each sector has a programming lockdown feature. This feature prevents programming of data in the designated sectors once the feature has been enabled. These sectors can contain secure code that is used to bring up the system. Enabling the lockdown feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; any sector’s usage as a write-protected region is optional to the user. At power-up or reset, all sectors are unlocked. To activate the lockdown for a specific sector, the six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked down, the contents of the sector is read-only and cannot be erased or programmed. SECTOR LOCKDOWN DETECTION: A software method is available to determine if programming of a sector is locked down. When the device is in the software product identification mode (see “Software Product Identification Entry/Exit” sections on page 24), a read from address location 00002H within a sector will show if programming the sector is locked down. If the data on I/O0 is low, the sector can be programmed; if the data on I/O0 is high, the program lockdown feature has been enabled and the sector cannot be programmed. The software product identification exit code should be used to return to standard operation. 7 1427L–FLASH–02/03 SECTOR LOCKDOWN OVERRIDE: The only way to unlock a sector that is locked down is through reset or power-up cycles. After power-up or reset, the content of a sector that is locked down can be erased and reprogrammed. ERASE SUSPEND/ERASE RESUME: The Erase Suspend command allows the system to interrupt a sector erase or chip erase operation and then program or read data from a different sector within the memory. After the Erase Suspend command is given, the device requires a maximum time of 15 µs to suspend the erase operation. After the erase operation has been suspended, the system can then read data or program data to any other sector within the device. An address is not required during the Erase Suspend command. During a sector erase suspend, another sector cannot be erased. To resume the sector erase operation, the system must write the Erase Resume command. The Erase Resume command is a one-bus cycle command. The device also supports an erase suspend during a complete chip erase. While the chip erase is suspended, the user can read from any sector within the memory that is protected. The command sequence for a chip erase suspend and a sector erase suspend are the same. PROGRAM SUSPEND/PROGRAM RESUME: The Program Suspend command allows the system to interrupt a programming operation and then read data from a different byte/word within the memory. After the Program Suspend command is given, the device requires a maximum of 15 µs to suspend the programming operation. After the programming operation has been suspended, the system can then read data from any other byte/word within the device. An address is not required during the program suspend operation. To resume the programming operation, the system must write the Program Resume command. The program suspend and resume are one-bus cycle commands. The command sequence for the erase suspend and program suspend are the same, and the command sequence for the erase resume and program resume are the same. PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. For details, see “Operating Modes” on page 17 (for hardware operation) or “Software Product Identification Entry/Exit” on page 24. The manufacturer and device codes are the same for both modes. 128-BIT PROTECTION REGISTER: The AT49BV/LV16X(T) contains a 128-bit register that can be used for security purposes in system design. The protection register is divided into two 64-bit blocks. The two blocks are designated as block A and block B. The data in block A is non-changeable and is programmed at the factory with a unique number. The data in block B is programmed by the user and can be locked out such that data in the block cannot be reprogrammed. To program block B in the protection register, the four-bus cycle Program Protection Register command must be used as shown in the “Command Definition in Hex” table on page 13. To lock out block B, the four-bus cycle Lock Protection Register command must be used as shown in the “Command Definition in Hex” table on page 13. Data bit D1 must be zero during the fourth bus cycle. All other data bits during the fourth bus cycle are don’t cares. To determine whether block B is locked out, the Product ID Entry command is given followed by a read operation from address 80H. If data bit D1 is zero, block B is locked. If data bit D1 is one, block B can be reprogrammed. Please see the “Protection Register Addressing Table” on page 14 for the address locations in the protection register. To read the protection register, the Product ID Entry command is given followed by a normal read operation from an address within the protection register. After determining whether block B is protected or not, or reading the protection register, the Product ID Exit command must be given prior to performing any other operation. 8 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) RDY/BUSY: For the AT49BV/LV161(T), an open-drain READY/BUSY output pin provides another method of detecting the end of a program or erase operation. RDY/BUSY is actively pulled low during the internal program and erase cycles and is released at the completion of the cycle. The open-drain connection allows for OR-tying of several devices to the same RDY/BUSY line. Please see “Status Bit Table” on page 12 for more details. HARDWARE DATA PROTECTION: The Hardware Data Protection feature protects against inadvertent programs to the AT49BV/LV16X(T) in the following ways: (a) VCC sense: if VCC is below 1.8V (typical), the program function is inhibited. (b) VCC power-on delay: once VCC has reached the VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c) Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Noise filter: pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle. (e) Program inhibit: VPP is less than VILPP. (f) VPP power-on delay: once VPP has reached 1.65V, program and erase operations can occur after 100 ns. INPUT LEVELS: While operating with a 2.65V to 3.6V power supply, the address inputs and control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V. OUTPUT LEVELS: For the AT49BV/LV160(T), output high levels (VOH) are equal to VCCQ 0.2V (not VCC). For 2.65V - 3.6V output levels, VCCQ must be tied to VCC. For 1.8V - 2.2V output levels, VCCQ must be regulated to 2.0V ± 10%, while VCC must be regulated to 2.65V - 3.0V (for minimum power). 9 1427L–FLASH–02/03 Figure 1. Data Polling Algorithm (Configuration Register = 00) Figure 2. Data Polling Algorithm (Configuration Register = 01) START START Read I/O7 - I/O0 Addr = VA Read I/O7 - I/O0 Addr = VA NO I/O7 = 1? YES I/O7 = Data? YES NO I/O3, I/O5 = 1? NO NO I/O3, I/O5 = 1? YES YES Program/Erase Operation Not Successful, Write Product ID Exit Command Read I/O7 - I/O0 Addr = VA I/O7 = Data? YES NO Program/Erase Operation Not Successful, Write Product ID Exit Command Notes: 10 Note: Program/Erase Operation Successful, Write Product ID Exit Command 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. Program/Erase Operation Successful, Device in Read Mode 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. I/O7 should be rechecked even if I/O5 = “1” because I/O7 may change simultaneously with I/O5. AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) Figure 3. Toggle Bit Algorithm (Configuration Register = 00) Figure 4. Toggle Bit Algorithm (Configuration Register = 01) START START Read I/O7 - I/O0 Read I/O7 - I/O0 Read I/O7 - I/O0 Read I/O7 - I/O0 Toggle Bit = Toggle? NO Toggle Bit = Toggle? YES NO YES NO I/O3, I/O5 = 1? YES Read I/O7 - I/O0 Twice Toggle Bit = Toggle? NO YES Program/Erase Operation Not Successful, Write Product ID Exit Command Note: I/O3, I/O5 = 1? YES Read I/O7 - I/O0 Twice Toggle Bit = Toggle? NO NO YES Program/Erase Operation Not Successful, Write Product ID Exit Command Program/Erase Operation Successful 1. The system should recheck the toggle bit even if I/O5 = “1” because the toggle bit may stop toggling as I/O5 changes to “1”. Note: Program/Erase Operation Successful, Write Product ID Exit Command 1. The system should recheck the toggle bit even if I/O5 = “1” because the toggle bit may stop toggling as I/O5 changes to “1”. 11 1427L–FLASH–02/03 Status Bit Table Status Bit I/O7 I/O7 I/O6 I/O5(1) I/O3(2) I/O2 RDY/BUSY 00 01 00/01 00/01 00/01 00/01 00/01 I/O7 0 TOGGLE 0 0 1 0 Erasing 0 0 TOGGLE 0 0 TOGGLE 0 Erase Suspended & Read Erasing Sector 1 1 1 0 0 TOGGLE 1 Erase Suspended & Read Non-erasing Sector DATA DATA DATA DATA DATA DATA 1 Erase Suspended & Program Non-erasing Sector I/O7 0 TOGGLE 0 0 TOGGLE 0 Configuration Register: Programming Notes: 12 1. I/O5 switches to a “1” when a program or an erase operation has exceeded the maximum time limits or when a program or sector erase operation is performed on a protected sector. 2. I/O3 switches to a “1” when the VPP level is not high enough to successfully perform program and erase operations. AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) Command Definition in Hex(1) Command Sequence 1st Bus Cycle Bus Cycles Addr Data Read 1 Addr DOUT Chip Erase 6 555 AA 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle Addr Data Addr Data Addr Data Addr Data Addr Data AAA(2) 55 555 80 555 AA AAA 55 555 10 Sector Erase 6 555 AA AAA 55 555 80 555 AA Byte/Word Program 4 555 AA AAA 55 555 A0 Addr DIN Enter Single Pulse Program Mode 6 555 AA AAA 55 555 80 555 Single Pulse Byte/Word Program 1 Addr DIN Sector Lockdown 6 555 AA AAA 55 555 80 Erase/Program Suspend 1 XXX B0 Erase/Program Resume 1 XXX 30 Product ID Entry 3 555 AA AAA 55 555 90 (5) Product ID Exit 3 555 AA AAA 55 555 F0 Product ID Exit(5) 1 XXX F0 Program Protection Register 4 555 AA AAA 55 555 Lock Protection Register - Block B 4 555 AA AAA 55 Status of Block B Protection 4 555 AA AAA Set Configuration Register 4 555 AA AAA Notes: 6th Bus Cycle (3)(4) SA 30 AAA 55 AA AAA 55 555 A0 555 AA AAA 55 SA(3)(4) 60 C0 Addr DIN 555 C0 080 X0 55 555 90 80 DOUT(6) 55 555 D0 XXX 00/01(7) 1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). In word operation I/O15 - I/O8 are Don’t Care. The ADDRESS FORMAT shown for each bus cycle is as follows: A11 - A0 (Hex). Address A19 through A11 are Don’t Care in the word mode. Address A19 through A11 and A-1 are Don’t Care in the byte mode. 2. Since A11 is a Don’t Care, AAA can be replaced with 2AA. 3. SA = sector address. Any byte/word address within a sector can be used to designate the sector address (see pages 15 and 16 for details). 4. Once a sector is in the lockdown mode, data in the protected sector cannot be changed unless the chip is reset or power cycled. 5. Either one of the Product ID Exit commands can be used. 6. If data bit D1 is “0”, block B is locked. If data bit D1 is “1”, block B can be reprogrammed. 7. The default state (after power-up) of the configuration register is “00”. Absolute Maximum Ratings* Temperature under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage on OE and VPP with Respect to Ground ...................................-0.6V to +13.0V 13 1427L–FLASH–02/03 Protection Register Addressing Table Word Use Block A7 A6 A5 A4 A3 A2 A1 A0 0 Factory A 1 0 0 0 0 0 0 1 1 Factory A 1 0 0 0 0 0 1 0 2 Factory A 1 0 0 0 0 0 1 1 3 Factory A 1 0 0 0 0 1 0 0 4 User B 1 0 0 0 0 1 0 1 5 User B 1 0 0 0 0 1 1 0 6 User B 1 0 0 0 0 1 1 1 7 Note: 14 User B 1 0 0 0 1 0 0 0 1. All address lines not specified in the above table must be “0” when accessing the protection register, i.e., A19 - A8 = 0. AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) AT49BV/LV160/161 – Sector Address Table Size (Bytes/Words) x8 Address Range (A19 - A-1) x16 Address Range (A19 - A0) SA0 8K/4K 000000 - 001FFF 00000 - 00FFF SA1 8K/4K 002000 - 003FFF 01000 - 01FFF SA2 8K/4K 004000 - 005FFF 02000 - 02FFF SA3 8K/4K 006000 - 007FFF 03000 - 03FFF SA4 8K/4K 008000 - 009FFF 04000 - 04FFF SA5 8K/4K 00A000 - 00BFFF 05000 - 05FFF SA6 8K/4K 00C000 - 00DFFF 06000 - 06FFF SA7 8K/4K 00E000 - 00FFFF 07000 - 07FFF SA8 64K/32K 010000 - 01FFFF 08000 - 0FFFF SA9 64K/32K 020000 - 02FFFF 10000 - 17FFF SA10 64K/32K 030000 - 03FFFF 18000 - 1FFFF SA11 64K/32K 040000 - 04FFFF 20000 - 27FFF SA12 64K/32K 050000 - 05FFFF 28000 - 2FFFF SA13 64K/32K 060000 - 06FFFF 30000 - 37FFF SA14 64K/32K 070000 - 07FFFF 38000 - 3FFFF SA15 64K/32K 080000 - 08FFFF 40000 - 47FFF SA16 64K/32K 090000 - 09FFFF 48000 - 4FFFF SA17 64K/32K 0A0000 - 0AFFFF 50000 - 57FFF SA18 64K/32K 0B0000 - 0BFFFF 58000 - 5FFFF SA19 64K/32K 0C0000 - 0CFFFF 60000 - 67FFF SA20 64K/32K 0D0000 - 0DFFFF 68000 - 6FFFF SA21 64K/32K 0E0000 - 0EFFFF 70000 - 77FFF SA22 64K/32K 0F0000 - 0FFFFF 78000 - 7FFFF SA23 64K/32K 100000 - 10FFFF 80000 - 87FFF SA24 64K/32K 110000 - 11FFFF 88000 - 8FFFF SA25 64K/32K 120000 - 12FFFF 90000 - 97FFF SA26 64K/32K 130000 - 13FFFF 98000 - 9FFFF SA27 64K/32K 140000 - 14FFFF A0000 - A7FFF SA28 64K/32K 150000 - 15FFFF A8000 - AFFFF SA29 64K/32K 160000 - 16FFFF B0000 - B7FFF SA30 64K/32K 170000 - 17FFFF B8000 - BFFFF SA31 64K/32K 180000 - 18FFFF C0000 - C7FFF SA32 64K/32K 190000 - 19FFFF C8000 - CFFFF SA33 64K/32K 1A0000 - 1AFFFF D0000 - D7FFF SA34 64K/32K 1B0000 - 1BFFFF D8000 - DFFFF SA35 64K/32K 1C0000 - 1CFFFF E0000 - E7FFF SA36 64K/32K 1D0000 - 1DFFFF E8000 - EFFFF SA37 64K/32K 1E0000 - 1EFFFF F0000 - F7FFF SA38 64K/32K 1F0000 - 1FFFFF F8000 - FFFFF Sector 15 1427L–FLASH–02/03 AT49BV/LV160T/161T – Sector Address Table Size (Bytes/Words) x8 Address Range (A19 - A-1) x16 Address Range (A19 - A0) SA0 64K/32K 000000 - 00FFFF 00000 - 07FFF SA1 64K/32K 010000 - 01FFFF 08000 - 0FFFF SA2 64K/32K 020000 - 02FFFF 10000 - 17FFF SA3 64K/32K 030000 - 03FFFF 18000 - 1FFFF SA4 64K/32K 040000 - 04FFFF 20000 - 27FFF SA5 64K/32K 050000 - 05FFFF 28000 - 2FFFF SA6 64K/32K 060000 - 06FFFF 30000 - 37FFF SA7 64K/32K 070000 - 07FFFF 38000 - 3FFFF SA8 64K/32K 080000 - 08FFFF 40000 - 47FFF SA9 64K/32K 090000 - 09FFFF 48000 - 4FFFF SA10 64K/32K 0A0000 - 0AFFFF 50000 - 57FFF SA11 64K/32K 0B0000 - 0BFFFF 58000 - 5FFFF SA12 64K/32K 0C0000 - 0CFFFF 60000 - 67FFF SA13 64K/32K 0D0000 - 0DFFFF 68000 - 6FFFF SA14 64K/32K 0E0000 - 0EFFFF 70000 - 77FFF SA15 64K/32K 0F0000 - 0FFFFF 78000 - 7FFFF SA16 64K/32K 100000 - 10FFFF 80000 - 87FFF SA17 64K/32K 110000 - 11FFFF 88000 - 8FFFF SA18 64K/32K 120000 - 12FFFF 90000 - 97FFF SA19 64K/32K 130000 - 13FFFF 98000 - 9FFFF SA20 64K/32K 140000 - 14FFFF A0000 - A7FFF SA21 64K/32K 150000 - 15FFFF A8000 - AFFFF SA22 64K/32K 160000 - 16FFFF B0000 - B7FFF SA23 64K/32K 170000 - 17FFFF B8000 - BFFFF SA24 64K/32K 180000 - 18FFFF C0000 - C7FFF SA25 64K/32K 190000 - 19FFFF C8000 - CFFFF SA26 64K/32K 1A0000 - 1AFFFF D0000 - D7FFF SA27 64K/32K 1B0000 - 1BFFFF D8000 - DFFFF SA28 64K/32K 1C0000 - 1CFFFF E0000 - E7FFF SA29 64K/32K 1D0000 - 1DFFFF E8000 - EFFFF SA30 64K/32K 1E0000 - 1EFFFF F0000 - F7FFF SA31 8K/4K 1F0000 - 1F1FFF F8000 - F8FFF SA32 8K/4K 1F2000 - 1F3FFF F9000 - F9FFF SA33 8K/4K 1F4000 - 1F5FFF FA000 - FAFFF SA34 8K/4K 1F6000 - 1F7FFF FB000 - FBFFF SA35 8K/4K 1F8000 - 1F9FFF FC000 - FCFFF SA36 8K/4K 1FA000 - 1FBFFF FD000 - FDFFF SA37 8K/4K 1FC000 - 1FDFFF FE000 - FEFFF SA38 8K/4K 1FE000 - 1FFFFF FF000 - FFFFF Sector 16 AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) DC and AC Operating Range Operating Temperature (Case) Ind. VCC Power Supply AT49BV/LV16X(T)-70 AT49BV/LV16X(T)-90 -40°C - 85°C -40°C - 85°C 2.65V to 3.3V/3.0V to 3.6V 2.65V to 3.3V/3.0V to 3.6V Operating Modes Mode CE OE WE RESET VPP Ai Read VIL VIL VIH VIH X Ai DOUT Program/Erase(2) VIL VIH VIL VIH VIHPP(6) Ai DIN Standby/Program Inhibit VIH X(1) X VIH X X High-Z X X VIH VIH X X VIL X VIH X X X X VIH VILPP(7) Output Disable X VIH X VIH X Reset X X X VIL X VIL VIL VIH VIH Program Inhibit I/O High-Z X High-Z Product Identification Hardware Software(5) Notes: VIH A1 - A19 = VIL, A9 = VH(3), A0 = VIL Manufacturer Code(4) A1 - A19 = VIL, A9 = VH(3), A0 = VIH Device Code(4) A0 = VIL, A1 - A19 = VIL Manufacturer Code(4) A0 = VIH, A1 - A19 = VIL Device Code(4) 1. 2. 3. 4. X can be VIL or VIH. Refer to AC programming waveforms on page 23. VH = 12.0V ± 0.5V. Manufacturer Code: 1FH (x8); 001FH (x16), Device Code: C0H (x8)-AT49BV/LV16X; 00C0H (x16)-AT49BV/LV16X; C2H (x8)-AT49BV/LV16XT; 00C2H (x16)-AT49BV/LV16XT. 5. See details under “Software Product Identification Entry/Exit” on page 24. 6. VIHPP (min) = 1.65V; VIHPP (max) = 3.6V. For faster erase/program operations, VPP can be set to 5.0V ± 0.5V or 12V ± 0.5V. 7. VILPP (max) = 0.8V. 17 1427L–FLASH–02/03 DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO Max Units VIN = 0V to VCC 10 µA Output Leakage Current VI/O = 0V to VCC 10 µA ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC 10 µA ISB2 VCC Standby Current TTL CE = 2.0V to VCC 1 mA ISB3 VCC Standby Current TTL CE = 2.0V to VCC, VCC = 2.85V 10 µA ICC (1)(2) VCC Active Read Current f = 5 MHz; IOUT = 0 mA, 3.3V≤ VCC 30 mA ICC1 VCC Programming Current (VPP = VCC) 45 mA µA VPP Input Load Current VPP = 0V, VCC = 3.0V 10 IPP1 VPP = VCC = 3.0V 10 µA ICC2 VCC Programming Current (VPP = 5.0V ± 0.5V) 40 mA IPP2 VPP Programming Current (VPP = 5.0V ± 0.5V) 5 mA ICC3 VCC Programming Current (VPP = 12.0V ± 0.5V) 40 mA IPP3 VPP Programming Current (VPP = 12.0V ± 0.5V) 6 mA VIL Input Low Voltage 0.6 V VIH Input High Voltage VOL1 Output Low Voltage IOL = 2.1 mA 0.45 V VOL2 Output Low Voltage IOL = 1.0 mA 0.20 V VOH1 Output High Voltage Min 2.0 IOH = -400 µA VCCQ < 2.6V IOH = -400 µA VCCQ ≥ 2.6V IOH = -400 µA VOH2 Output High Voltage Notes: 18 2.4 [AT49BV/LV160(T)] 2.4 [AT49BV/LV161(T)] IOH = -100 µA VCCQ < 2.6V IOH = -100 µA VCCQ ≥ 2.6V IOH = -100 µA VCCQ - 0.2 [AT49BV/LV160(T)] VCCQ - 0.1 [AT49BV/LV160(T)] 2.5 [AT49BV/LV160(T)] 2.5 [AT49BV/LV161(T)] V V V V V V V 1. In the erase mode, ICC is 50 mA. 2. For 3.3V < VCC < 3.6V, ICC (max) = 35 mA AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) . AC Read Characteristics AT49BV/LV16X(T)-70 Symbol Parameter tRC Read Cycle Time tACC Min Max AT49BV/LV16X(T)-90 Min Max Units 70 90 ns Address to Output Delay 70 90 ns tCE(1) CE to Output Delay 70 90 ns tOE(2) OE to Output Delay 0 35 0 40 ns tDF(3)(4) CE or OE to Output Float 0 25 0 25 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tRO RESET to Output Delay 0 100 ns 100 ns AC Read Waveforms(1)(2)(3)(4) tRC ADDRESS ADDRESS VALID CE tCE tOE OE tDF tOH tACC tRO RESET OUTPUT Notes: HIGH Z OUTPUT VALID 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. 19 1427L–FLASH–02/03 Input Test Waveforms and Measurement Level Output Test Load Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol Typ Max Units Conditions CIN 4 6 pF VIN = 0V COUT 8 12 pF VOUT = 0V Note: 20 1. This parameter is characterized and is not 100% tested AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) . AC Byte/Word Load Characteristics Symbol Parameter Min Max Units tAS, tOES Address, OE Setup Time 0 ns tAH Address Hold Time 40 ns tCS Chip Select Setup Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 40 ns tDS Data Setup Time 30 ns tDH, tOEH Data, OE Hold Time 0 ns tWPH Write Pulse Width High 30 ns AC Byte/Word Load Waveforms WE Controlled CE Controlled 21 1427L–FLASH–02/03 Program Cycle Characteristics Symbol Parameter Min tBP Byte/Word Programming Time (VIHPP < VPP < 4.5V) Typ Max Units 20 200 µs 10 100 tBPVPP Byte/Word Programming Time (VPP > 4.5V) tAS Address Setup Time 0 ns tAH Address Hold Time 40 ns tDS Data Setup Time 30 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 40 ns tWPH Write Pulse Width High 30 ns tWC Write Cycle Time 70 ns µs tRP Reset Pulse Width 500 ns tRH Reset High Time before Read 50 ns tEC Chip Erase Cycle Time (VPP < 4.5V) 12 seconds tECVPP Chip Erase Cycle Time (VPP > 4.5V) 6 seconds tSEC Sector Erase Cycle Time 400 ms tEPS Erase or Program Suspend Time 15 µs 300 Program Cycle Waveforms PROGRAM CYCLE OE CE tWP tBP tWPH WE tAS tAH A0 -A19 tDH 555 555 AAA tWC 555 ADDRESS tDS DATA 55 AA INPUT DATA A0 AA Sector or Chip Erase Cycle Waveforms OE (1) CE tWP tWPH WE tAS A0-A19 tAH 555 Notes: 22 555 555 AAA tWC DATA tDH Note 2 AAA tEC tDS AA 55 80 AA 55 Note 3 WORD 0 WORD 1 WORD 2 WORD 3 WORD 4 WORD 5 1. OE must be high only when WE and CE are both low. 2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased. (See note 3 under Command Definitions.) 3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H. AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) Data Polling Characteristics(1) Symbol Parameter Min tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns Max (2) tOE tWR Notes: Typ OE to Output Delay Write Recovery Time 1. These parameters are characterized and not 100% tested. 2. See tOE spec in “AC Read Characteristics” on page 19. Units ns 0 ns Data Polling Waveforms Toggle Bit Characteristics(1) Symbol Parameter Min tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns (2) tOE OE to Output Delay tOEHP OE High Pulse tWR Notes: Write Recovery Time 1. These parameters are characterized and not 100% tested. 2. See tOE spec in “AC Read Characteristics” on page 19. Typ Max Units ns 50 ns 0 ns Toggle Bit Waveforms(1)(2)(3) Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling input(s). 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. 23 1427L–FLASH–02/03 Software Product Identification Entry(1) Sector Lockdown Enable Algorithm(1) LOAD DATA AA TO ADDRESS 555 LOAD DATA AA TO ADDRESS 555 LOAD DATA 55 TO ADDRESS AAA LOAD DATA 55 TO ADDRESS AAA LOAD DATA 80 TO ADDRESS 555 LOAD DATA 90 TO ADDRESS 555 LOAD DATA AA TO ADDRESS 555 ENTER PRODUCT IDENTIFICATION MODE(2)(3)(5) LOAD DATA 55 TO ADDRESS AAA Software Product Identification Exit(1)(6) LOAD DATA AA TO ADDRESS 555 LOAD DATA 55 TO ADDRESS AAA OR LOAD DATA F0 TO ANY ADDRESS LOAD DATA 60 TO SECTOR ADDRESS EXIT PRODUCT IDENTIFICATION MODE(4) LOAD DATA F0 TO ADDRESS 555 PAUSE 200 µs(2) Notes: 1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex) Address Format: A11 - A0 (Hex), A-1, and A11 - A19 (Don’t Care). 2. Sector Lockdown feature enabled. EXIT PRODUCT IDENTIFICATION MODE(4) Notes: 1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex) 2. 3. 4. 5. 6. 24 Address Format: A11 - A0 (Hex), A-1, and A11 - A19 (Don’t Care). A1 - A19 = VIL. Manufacturer Code is read for A0 = VIL; Device Code is read for A0 = VIH. Additional Device Code is read for address 0003H The device does not remain in identification mode if powered down. The device returns to standard operation mode. Manufacturer Code: 1FH(x8); 001FH(x16) Device Code: C0H (x8) - AT49BV/LV16X; 00C0H (x16) - AT49BV/LV16X; C2H (x8) - AT49BV/LV16XT; 00C2H (x16) - AT49BV/LV16XT. Additional Device Code: 08H (x8) - AT49BV/LV16X(T) 0008H (x16) - AT49BV/LV16X(T) Either one of the Product ID Exit commands can be used. AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) AT49BV160(T)/161(T) Ordering Information ICC (mA) tACC (ns) Active Standby Ordering Code Package Operation Range 70 25 0.01 AT49BV160-70CI AT49BV160-70TI 45C1 48T Industrial (-40° to 85°C) 90 25 0.01 AT49BV160-90CI AT49BV160-90TI 45C1 48T Industrial (-40° to 85°C) 70 25 0.01 AT49BV160T-70CI AT49BV160T-70TI 45C1 48T Industrial (-40° to 85°C) 90 25 0.01 AT49BV160T-90CI AT49BV160T-90TI 45C1 48T Industrial (-40° to 85°C) 70 25 0.01 AT49BV161-70CI AT49BV161-70TI 48C5 48T Industrial (-40° to 85°C) 90 25 0.01 AT49BV161-90CI AT49BV161-90TI 48C5 48T Industrial (-40° to 85°C) 70 25 0.01 AT49BV161T-70CI AT49BV161T-70TI 48C5 48T Industrial (-40° to 85°C) 90 25 0.01 AT49BV161T-90CI AT49BV161T-90TI 48C5 48T Industrial (-40° to 85°C) AT49LV160(T)/161(T) Ordering Information ICC (mA) tACC (ns) Active Standby Ordering Code Package Operation Range 90 25 0.01 AT49LV160-90TI 48T Industrial (-40° to 85°C) 70 25 0.01 AT49LV161-70CI AT49LV161-70TI 48C5 48T Industrial (-40° to 85°C) 70 25 0.01 AT49LV161T-70CI AT49LV161T-70TI 48C5 48T Industrial (-40° to 85°C) Package Type 45C1 45-ball, Plastic Chip-size Ball Grid Array Package (CBGA) 48C5 48-ball, Plastic Chip-size Ball Grid Array Package (CBGA) 48T 48-lead, Plastic Thin Small Outline Package (TSOP) 25 1427L–FLASH–02/03 Packaging Information 45C1 – CBGA Dimensions in Millimeters and (Inches). Controlling dimension: millimeters. 6.60 (0.260) 6.40 (0.252) A1 ID 7.60 (0.299) 7.40 (0.291) 0.15 (0.006)MIN 1.20 (0.047) MAX 5.25 (0.207) 0.625 (0.025) REF 8 7 6 5 4 3 2 1 1.875(0.074) REF A B C 3.75 (0.148) D 0.75 (0.0295) BSC NON-ACCUMULATIVE E F 0.30 (0.014) DIA BALL TYP 0.75 (0.0295) BSC NON-ACCUMULATIVE 4/11/01 R 26 2325 Orchard Parkway San Jose, CA 95131 TITLE 45C1, 45-ball (8 x 6 Array), 0.75 mm Pitch, 6.5 x 7.5 x 1.2 mm Chip-scale Ball Grid Array Package (CBGA) DRAWING NO. 45C1 REV. A AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 AT49BV/LV160(T)/161(T) 48C5 – CBGA Dimensions in Millimeters and (Inches). Controlling dimension: millimeters. 6.10 (0.240) 5.90 (0.232) A1 ID 8.10 (0.319) 7.90 (0.311) 0.25 (0.010)MIN 1.20 (0.047) MAX TOP VIEW SIDE VIEW 1.00(0.039) REF 4.00(0.157) 6 5 4 3 2 1 1.20 (0.047) REF A B C 0.80 (0.0315) BSC NON-ACCUMULATIVE D 5.60 (0.220) E F G H 0.40 (0.016) DIA BALL TYP 0.80 (0.0315) BSC NON-ACCUMULATIVE BOTTOM VIEW 10/18/01 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 48C5, 48-ball (6 x 8 Array), 0.80 mm Pitch, 6 x 8 x 1.2 mm Chip-scale Ball Grid Array Package (CBGA) DRAWING NO. 48C5 REV. A 27 1427L–FLASH–02/03 48T – TSOP PIN 1 0º ~ 8º c Pin 1 Identifier D1 D L b e L1 A2 E A GAGE PLANE SEATING PLANE COMMON DIMENSIONS (Unit of Measure = mm) A1 MIN NOM MAX A – – 1.20 A1 0.05 – 0.15 A2 0.95 1.00 1.05 D 19.80 20.00 20.20 D1 18.30 18.40 18.50 Note 2 E 11.90 12.00 12.10 Note 2 L 0.50 0.60 0.70 SYMBOL Notes: 1. This package conforms to JEDEC reference MO-142, Variation DD. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. L1 0.25 BASIC b 0.17 0.22 0.27 c 0.10 – 0.21 e NOTE 0.50 BASIC 10/18/01 R 28 2325 Orchard Parkway San Jose, CA 95131 TITLE 48T, 48-lead (12 x 20 mm Package) Plastic Thin Small Outline Package, Type I (TSOP) DRAWING NO. REV. 48T B AT49BV/LV160(T)/161(T) 1427L–FLASH–02/03 Atmel Headquarters Atmel Operations Corporate Headquarters Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL (49) 71-31-67-0 FAX (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France TEL (33) 2-40-18-18-18 FAX (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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