PD- 95208 IRF7807D1PbF FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier • Lead-Free 1 8 K/D A/S 2 7 K/D A/S 3 6 K/D G 4 5 K/D A/S SO-8 Description The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. Top View Device Features (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Symbol Max. Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 ID 8.3 Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) 70°C Pulsed Drain Current Power Dissipation 25°C 6.6 IDM 66 PD 2.5 70°C Schottky and Body Diode 25°C Average ForwardCurrent 70°C Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient www.irf.com 1.6 Units V A W IF (AV) 3.5 A TJ, TSTG –55 to 150 °C RθJA Max. 50 Units °C/W 2.2 1 5/5/04 IRF7807D1PbF Electrical Characteristics Parameter Min Drain-to-Source Breakdown Voltage* V(BR)DSS Static Drain-Source on Resistance* RDS(on) Typ Max 30 17 Gate Threshold Voltage* VGS(th) 25 1.0 Units Conditions V VGS = 0V, ID = 250µA mΩ VGS = 4.5V, ID = 7A V VDS = VGS,ID = 250µA Drain-Source Leakage Current* IDSS 90 7.2 µA mA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125°C Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) IGSS +/- 100 nA VGS = +/-12V Qgsync 10.5 14 Qgcont 12 17 Qgs1 2.1 Qgs2 0.76 Qgd QSW 2.9 3.66 5.2 Output Charge* Qoss 15.3 18.4 Gate Resistance Rg 1.2 VDS<100mV, VGS = 5V, ID = 7A VDS= 16V, VGS = 5V, ID = 7A VDS = 16V, ID = 7A nC VDS = 16V, VGS = 0 Ω Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage Min Reverse Recovery Time trr Reverse Recovery Charge Forward Turn-On Time Qrr ton * Typ VSD 51 48 Max 0.5 0.39 Units Conditions V Tj = 25°C, Is = 1A, VGS =0V Tj = 125°C, Is = 1A, VGS =0V ns Tj = 25°C, Is = 7.0A, VDS = 16V nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular Devices are 100% tested to these parameters. 2 www.irf.com IRF7807D1PbF 100 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V VGS 4.5V 3.5V 3.0V BOTTOM 2.5V ID, Drain-to-Source Current (A) TOP 10 2.5V 380µs PULSE WIDTH Tj = 25°C 1 2.5V 10 380µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 0.1 1 VDS, Drain-to-Source Voltage (V) 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 60 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 50 40 30 20 0.0V 10 380µs PULSE WIDTH Tj = 25°C 0.2 0.4 0.6 0.8 VSD, Source-to-Drain Voltage (V) Fig 3. Typical Reverse Output Characteristics www.irf.com 50 40 30 20 10 380µS PULSE WIDTH 0.0V Tj = 150°C 0 0 0 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 60 IS, Source-to-Drain Current (A) IS, Source-to-Drain Current (A) ID , Drain-to-Source Current ( A ) TOP 1 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Reverse Output Characteristics 3 IRF7807D1PbF 2000 1200 VGS, Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) 6.0 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 800 Coss 400 0 Crss 1 ID= 7.0A VDS = 16V 4.0 2.0 0.0 10 100 0 VDS , Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance 8 10 12 100 VGS = 4.5V 1.0 0.5 0 20 40 60 80 100 120 140 160 T J , Junction Temperature ( °C ) Fig 7. Normalized On-Resistance Vs. Temperature 4 6 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ID = 7.0A -60 -40 -20 4 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 2.0 2 T J = 25°C T J = 150°C 10 VDS = 10V 380µs PULSE WIDTH 1 2.5 3.0 3.5 VGS, Gate-to-Source Voltage (V) Fig 8. Typical Transfer Characteristics www.irf.com 0.05 0.04 0.03 ID = 7.0A 0.02 0.01 2.0 4.0 6.0 8.0 10.0 R DS (on), Drain-to-Source On Resistance( Ω ) RDS(on) , Drain-to -Source On Resistance ( Ω) IRF7807D1PbF 0.024 0.022 VGS = 4.5V 0.020 VGS = 10V 0.018 0.016 0 20 Fig 9. On-Resistance Vs. Gate Voltage 40 60 80 I D , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 10. On-Resistance Vs. Drain Current Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.1 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (HEXFET® MOSFET) www.irf.com 5 IRF7807D1PbF MOSFET , Body Diode & Schottky Diode Characteristics 100 100 Reverse Current - I R ( mA ) 10 Tj = 125°C Instantaneous Forward Current - I F ( A ) Tj = 25°C 10 Tj = 150°C 125°C 1 100°C 0.1 75°C 50°C 0.01 25°C 0.001 0.0001 0 5 10 15 20 25 30 Reverse Voltage - VR (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V F ( V ) Fig. 12 - Typical Forward Voltage Drop Characteristics 6 www.irf.com IRF7807D1PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 6X 2 3 0.25 [.010] 4 A e e1 8X b 0.25 [.010] A MILLIMET ERS MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D A 5 INCHES MIN MAX .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BAS IC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING TO A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOS FET) INT ERNATIONAL RECTIFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER www.irf.com 7 IRF7807D1PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/04 8 www.irf.com