IRF IRF7341PBF

PD -95199
IRF7341PbF
Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
HEXFET® Power MOSFET
l
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
VDSS = 55V
RDS(on) = 0.050Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Max.
Units
55
4.7
3.8
38
2.0
1.3
0.016
± 20
30
72
5.0
-55 to + 150
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient…
Typ.
Max.
Units
–––
62.5
°C/W
1
11/9/04
IRF7341PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
–––
1.0
7.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.059
0.043
0.056
–––
–––
–––
–––
–––
–––
24
2.3
7.0
8.3
3.2
32
13
740
190
71
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.050
VGS = 10V, ID = 4.7A „
Ω
0.065
VGS = 4.5V, ID = 3.8A „
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 4.5A
2.0
VDS = 55V, VGS = 0V
µA
25
VDS = 55V, VGS = 0V, TJ = 55°C
-100
VGS = -20V
nA
100
VGS = 20V
36
ID = 4.5A
3.4
nC
VDS = 44V
10
VGS = 10V, See Fig. 10 „
12
VDD = 28V
4.8
ID = 1.0A
ns
48
RG = 6.0Ω
20
RD = 16Ω, „
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.0
–––
–––
38
–––
–––
–––
–––
60
120
1.2
90
170
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.0A, VGS = 0V ƒ
TJ = 25°C, IF = 2.0A
di/dt = -100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 6.5mH
RG = 25Ω, IAS = 4.7A. (See Figure 8)
2
ƒ ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1 inch square copper board, t<10 sec
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IRF7341PbF
100
100
VGS
15V
12V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
12V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
10
3.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
100
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
10
1
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
V DS = 25V
20µs PULSE WIDTH
3
4
5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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6
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.5
0.8
1.1
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 4.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
R DS (on), Drain-to-Source On Resistance (Ω)
IRF7341PbF
0.120
0.100
0.080
VGS = 4.5V
0.060
VGS = 10V
0.040
TJ , Junction Temperature ( °C)
20
30
200
0.08
I D = 4.7A
0.04
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
10
A
EAS , Single Pulse Avalanche Energy (mJ)
0.10
0.06
40
Fig 6. Typical On-Resistance Vs. Drain
Current
0.12
RDS(on) , Drain-to-Source On Resistance ( Ω )
10
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
4
0
TOP
160
BOTTOM
ID
2.1A
3.8A
4.7A
120
80
40
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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IRF7341PbF
1200
VGS , Gate-to-Source Voltage (V)
1000
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
600
400
Coss
200
ID = 4.5A
VDS = 48V
VDS = 30V
VDS = 12V
16
12
8
4
Crss
0
1
10
0
100
0
10
20
30
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7341PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
6
8
7
6
5
1
2
3
4
θ
H
E
0.25 [.010]
A
e
e1
MIN
1.35
1.75
A1 .0040
.0098
0.10
0.25
8X b
MAX
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
0.25 [.010]
MILLIMET ERS
MAX
.0688
e1
6X
INCHES
MIN
.0532
A
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
6
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IRF7341PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
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