CY7C4122KV13/CY7C4142KV13 144-Mbit QDR™-IV XP SRAM 144-Mbit QDR™-IV XP SRAM Features ■ Configurations CY7C4122KV13 – 8 M × 18 144-Mbit density (8 M × 18, 4 M × 36) [1] ■ Total Random Transaction Rate of 2132 MT/s ■ Maximum operating frequency of 1066 MHz ■ Read latency of 8.0 clock cycles and write latency of 5.0 clock cycles ■ Eight-bank architecture enables one access per bank per cycle ■ Two-word burst on all accesses ■ Dual independent bidirectional data ports ❐ Double data rate (DDR) data ports ❐ Supports concurrent read/write transactions on both ports ■ Single address port used to control both data ports ❐ DDR address signaling CY7C4142KV13 – 4 M × 36 Functional Description ■ Single data rate (SDR) control signaling ■ High-speed transceiver logic (HSTL) and stub series terminated logic (SSTL) compatible signaling (JESD8-16A compliant) ❐ I/O VDDQ = 1.2 V ± 50 mV or 1.25 V ± 50 mV The QDR-IV XP (Xtreme Performance) SRAM is a high-performance memory device optimized to maximize the number of random transactions per second by the use of two independent bidirectional data ports. These ports are equipped with DDR interfaces and designated as port A and port B respectively. Accesses to these two data ports are concurrent and independent of each other. Access to each port is through a common address bus running at DDR. The control signals are running at SDR and determine if a read or write should be performed. There are three types of differential clocks: ■ (CK, CK#) for address and command clocking ■ (DKA, DKA#, DKB, DKB#) for data input clocking ■ (QKA, QKA#, QKB, QKB#) for data output clocking Addresses for port A are latched on the rising edge of the input clock (CK), and addresses for port B are latched on the falling edge of the input clock (CK). ■ Pseudo open drain (POD) signaling (JESD8-24 compliant) ❐ I/O VDDQ = 1.1 V ± 50 mV or 1.2 V ± 50 mV ■ Core voltage ❐ VDD = 1.3 V ± 40 mV This QDR-IV XP SRAM is internally partitioned into eight internal banks. Each bank can be accessed once for every clock cycle, enabling the SRAM to operate at high frequencies. ■ On-die termination (ODT) ❐ Programmable for clock, address/command, and data inputs The QDR-IV XP SRAM device is offered in a two-word burst option and is available in × 18 and × 36 bus width configurations. ■ Internal self-calibration of output impedance through ZQ pin ■ Bus inversion to reduce switching noise and power ❐ Programmable on/off for address and data For an ×18 bus-width configuration, there are 22 address bits, and for an ×36 bus width configuration, there are 21 address bits respectively. ■ Address bus parity error protection ■ Training sequence for per-bit deskew ■ On-chip error correction code (ECC) to reduce soft error rate (SER) ■ JTAG 1149.1 test access port (JESD8-26 compliant) ❐ 1.3 V LVCMOS signaling ■ Available in 361-ball FCBGA Pb-free package (21 × 21 mm) An on-chip ECC circuitry detects and corrects all single-bit memory errors including those induced by soft error events, such as cosmic rays and alpha particles. The resulting SER of these devices is expected to be less than 0.01 FITs/Mb, a four-order-of-magnitude improvement over previous generation SRAMs. For a complete list of related resources, click here. Selection Guide Description Maximum operating frequency Maximum operating current ×18 ×36 QDR-IV 2132 (MT/s) 1066 4100 4500 QDR-IV 1866 (MT/s) 933 3400 4000 Unit MHz mA Note 1. RTR (Random Transaction Rate) is defined as the number of fully random memory accesses (reads or writes) that can be performed on the memory. RTR is measured in million transactions per second. Cypress Semiconductor Corporation Document Number: 001-68255 Rev. *O • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised October 7, 2015 CY7C4122KV13/CY7C4142KV13 Logic Block Diagram – CY7C4122KV13 Document Number: 001-68255 Rev. *O Page 2 of 46 CY7C4122KV13/CY7C4142KV13 Logic Block Diagram – CY7C4142KV13 Document Number: 001-68255 Rev. *O Page 3 of 46 CY7C4122KV13/CY7C4142KV13 Contents Pin Configurations ........................................................... 5 Pin Definitions .................................................................. 7 Functional Overview ........................................................ 9 Clocking ....................................................................... 9 Command Cycles ........................................................ 9 Read and Write Data Cycles ....................................... 9 Banking Operation ....................................................... 9 Address and Data Bus Inversion ................................. 9 Address Parity ........................................................... 10 Port Enable ................................................................ 10 On-Die Termination (ODT) Operation ....................... 10 JTAG Operation ........................................................ 10 Power-Up and Reset ................................................. 10 Operation Modes ....................................................... 11 Deskew Training Sequence ...................................... 12 I/O Signaling Standards ............................................ 12 Initialization ................................................................ 13 Configuration Registers ............................................. 14 Configuration Registers Description .......................... 15 Configuration Register Definitions ............................. 15 I/OType and Port Enable Bit Definitions .................... 17 ODT Termination Bit Definitions ................................ 18 Drive Strength Bit Definitions .................................... 19 IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 20 Test Access Port ....................................................... 20 TAP Registers ........................................................... 20 TAP Instruction Set ................................................... 20 TAP Controller State Diagram ....................................... 22 TAP Controller Block Diagram ...................................... 23 TAP Electrical Characteristics ...................................... 24 Document Number: 001-68255 Rev. *O TAP AC Switching Characteristics ............................... 24 TAP Timing Diagram ...................................................... 25 Identification Register Definitions ................................ 26 Scan Register Sizes ....................................................... 26 Instruction Codes ........................................................... 26 Boundary Scan Order .................................................... 27 Maximum Ratings ........................................................... 30 Operating Range ............................................................. 30 Neutron Soft Error Immunity ......................................... 30 Electrical Characteristics ............................................... 30 Capacitance .................................................................... 32 Thermal Resistance ........................................................ 32 AC Test Load and Waveform ......................................... 32 Switching Characteristics .............................................. 33 Switching Waveforms .................................................... 35 Ordering Information ...................................................... 42 Ordering Code Definitions ......................................... 42 Package Diagram ............................................................ 43 Acronyms ........................................................................ 44 Document Conventions ................................................. 44 Units of Measure ....................................................... 44 Document History Page ................................................. 45 Sales, Solutions, and Legal Information ...................... 46 Worldwide Sales and Design Support ....................... 46 Products .................................................................... 46 PSoC® Solutions ...................................................... 46 Cypress Developer Community ................................. 46 Technical Support ..................................................... 46 Page 4 of 46 CY7C4122KV13/CY7C4142KV13 Pin Configurations Figure 1. 361-ball FCBGA pinout CY7C4122KV13 (8 M × 18) Document Number: 001-68255 Rev. *O Page 5 of 46 CY7C4122KV13/CY7C4142KV13 Pin Configurations (continued) Figure 2. 361-ball FCBGA pinout CY7C4142KV13 (4 M × 36) Document Number: 001-68255 Rev. *O Page 6 of 46 CY7C4122KV13/CY7C4142KV13 Pin Definitions Pin Name I/Os Pin Description Input Clock Address/Command Input Clock. CK and CK# are differential clock inputs. All control and address input signals are sampled on both the rising and falling edges of CK. The rising edge of CK samples the control and address inputs for port A, while the falling edge of CK samples the control and address inputs for port B. CK# is 180 degrees out of phase with CK. A[x:0] Input Address Inputs. Sampled on the rising edge of both CK and CK# clocks during active read and write operations. These address inputs are used for read and write operations on both ports. The lower three address pins (A0, A1, and A2) select the bank that will be accessed. These address inputs are also known as bank address pins. For (× 36) data width - Address inputs A[20:0] are used and A[24:21] are reserved. For (× 18) data width - Address inputs A[21:0] are used and A[24:22] are reserved. The reserved address inputs are No Connects and may be tied high, tied low, or left floating. AP Input Address Parity Input. Used to provide even parity across the address pins. For (× 36) data width - AP covers address inputs A[20:0] For (× 18) data width - AP covers address inputs A[21:0] PE# Output AINV Input Address Inversion Pin for Address and Address Parity Inputs. For (× 36) data width - AINV covers address inputs A[20:0] and the address parity input (AP). For (× 18) data width - AINV covers address inputs A[21:0] and the address parity input (AP). DKA[1:0], DKA#[1:0], DKB[1:0], DKB#[1:0] Input Data Input Clock. DKA[0] / DKA#[0] controls the DQA[17:0] inputs for ×36 configuration and DQA[8:0] inputs for × 18 configuration respectively DKA[1] / DKA#[1] controls the DQA[35:18] inputs for ×36 configuration and DQA[17:9] inputs for × 18 configuration respectively DKB[0] / DKB#[0] controls the DQB[17:0] inputs for ×36 configuration and DQB[8:0] inputs for × 18 configuration respectively DKB[1] / DKB#[1] controls the DQB[35:18] inputs for ×36 configuration and DQB[17:9] inputs for × 18 configuration respectively QKA[1:0], QKA#[1:0], QKB[1:0], QKB#[1:0] Output Data Output Clock. QKA[0] / QKA#[0] controls the DQA[17:0] outputs for × 36 configuration and DQA[8:0] outputs for × 18 configuration respectively QKA[1] / QKA#[1] controls the DQA[35:18] outputs for × 36 configuration and DQA[17:9] outputs for × 18 configuration respectively QKB[0] / QKB#[0] controls the DQB[17:0] outputs for × 36 configuration and DQB[8:0] outputs for × 18 configuration respectively QKB[1] / QKB#[1] controls the DQB[35:18] outputs for × 36 configuration and DQB[17:9] outputs for × 18 configuration respectively DQA[x:0], DQB[x:0] Input/Output Data Input/Output.Bidirectional data bus. For (× 36) data width DQA[35:0]; DQB[35:0] For (× 18) data width DQA[17:0]; DQB[17:0] DINVA[1:0], DINVB[1:0] Input/Output Data Inversion Pin for DQ Data Bus. DINVA[0] covers DQA[17:0] for × 36 configuration and DQA[8:0] for × 18 configuration respectively DINVA[1] covers DQA[35:18] for × 36 configuration and DQA[17:9] for × 18 configuration respectively DINVB[0] covers DQB[17:0] for × 36 configuration and DQB[8:0] for × 18 configuration respectively DINVB[1] covers DQB[35:18] for × 36 configuration and DQB[17:9] for × 18 configuration respectively LDA#, LDB# Input Synchronous Load Input. LDA# is sampled on the rising edge of the CK clock, while LDB# is sampled on the falling edge of CK clock. LDA# enables commands for data port A and LDB# enables commands for data port B. LDx# enables the commands when LDx# is LOW and disables the commands when LDx# is HIGH. When the command is disabled, new commands are ignored, but internal operations continue. CK, CK# Address Parity Error Flag. Asserted LOW when address parity error is detected. Once asserted, PE# will remain LOW until cleared by a Configuration Register command. Document Number: 001-68255 Rev. *O Page 7 of 46 CY7C4122KV13/CY7C4142KV13 Pin Definitions (continued) Pin Name I/Os Pin Description Input Synchronous Read/Write Input. RWA# input is sampled on the rising edge of the CK clock, while RWB# is sampled on the falling edge of the CK clock. The RWA# input is used in conjunction with the LDA# input to select a Read or Write Operation. Similarly, the RWB# input is used in conjunction with the LDB# input to select a read or write operation. Output Output Data Valid Indicator. The QVLD pin indicates valid output data. QVLD is edge-aligned with QKx and QKx#. ZQ/ZT Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CFG# Input Configuration bit. This pin is used to configure different mode registers. RST# Input Active Low Asynchronous RST. This pin is active when RST# is LOW and inactive when RST# is HIGH. The RST# pin has an internal pull-down resistor. LBK0#, LBK1# Input Loopback mode for control and address/command/clock deskewing. TMS Input Test Mode Select Input pin for JTAG. This pin may be left unconnected if the JTAG function is not used in the circuit. TDI Input Test Data Input pin for JTAG. This pin may be left unconnected if the JTAG function is not used in the circuit. TCK Input Test Clock Input pin for JTAG. This pin must be tied to VSS if the JTAG function is not used in the circuit. TDO Output Test Data Output pin for JTAG. This pin may be left unconnected if the JTAG function is not used in the circuit. TRST# Input Test Reset Input pin for JTAG. This pin must be tied to VDD if the JTAG function is not used in the system. TRST# input is applicable only in JTAG mode. DNU N/A Do Not Use. Do not use pins. VREF Reference VDD Power Power Supply Inputs to the Core of the Device. VDDQ Power Power Supply Inputs for the Outputs of the Device. VSS Ground Ground for the Device. RWA#, RWB# QVLDA[1:0], QVLDB[1:0] Reference Voltage Input. Static input used to set the reference level for inputs, outputs, and AC measurement points. Document Number: 001-68255 Rev. *O Page 8 of 46 CY7C4122KV13/CY7C4142KV13 Functional Overview The QDR-IV XP SRAM is a two-word burst synchronous SRAM equipped with dual independent bidirectional data ports. The following sections describe the device operation. Clocking There are three groups of clock signals: CK/CK#, DKx/DKx#, and QKx/QKx#, where x can be A or B, referring to the respective ports. The CK/CK# clock is associated with the address and control pins: A[24:0], LDA#, LDB#, RWA#, RWB#. The CK/CK# transitions are centered with respect to the address and control signal transitions. The DKx/DKx# clocks are associated with write data. The DKx/DKx# clocks are used as source-centered clocks for the DDR DQx and DINVx pins, when acting as inputs for the write data. The QKx/QKx# clocks are associated with read data. The QKx/QKx# clocks are used as source-synchronous clocks for the double data rate DQx and DINVx pins, when acting as outputs for the read data. Command Cycles The QDR-IV XP SRAM read and write commands are driven by the control inputs (LDA#, LDB#, RWA#, and RWB#) and the Address Bus. The port A control inputs (LDA# and RWA#) are sampled at the rising edge of the input clock. The port B control inputs (LDB# and RWB#) are sampled at the falling edge of the input clock. For port A: When LDA# = 0 and RWA# = 1, a read operation is initiated. When LDA# = 0 and RWA# = 0, a write operation is initiated. The address is sampled on the rising edge of the input clock. For port B: When LDB# = 0 and RWB# = 1, a read operation is initiated. When LDB# = 0 and RWB# = 0, a write operation is initiated. The address is sampled on the falling edge of the input clock. Read and Write Data Cycles Read data is supplied to the DQA pins exactly eight clock cycles from the rising edge of the CK signal corresponding to the cycle where the read command was initiated. QVLDA is asserted one-half clock cycle prior to the first data word driven on the bus. It is deasserted one-half cycle prior to the last data word driven on the bus. Data outputs are tristated in the clock following the last data word. Read data is supplied to the DQB pins exactly eight clock cycles from the falling edge of the CK signal corresponding to the cycle that the read command was initiated. QVLDB is asserted one-half clock cycle prior to the first data word driven on the bus. It is deasserted one-half cycle prior to the last data word driven on the bus. Data outputs are tristated in the clock following the last data word. Document Number: 001-68255 Rev. *O Write data is supplied to the DQA pins exactly five clock cycles from the rising edge of the CK signal corresponding to the cycle that the write command was initiated. Write data is supplied to the DQB pins exactly five clock cycles from the falling edge of the CK signal corresponding to the cycle that the write command was initiated. Banking Operation The QDR-IV XP SRAM is designed with eight internal banks. The lower three address pins (A0, A1, and A2) select the bank that will be accessed. These address inputs are also known as bank address pins. Bank Access Rules 1. On the rising edge of the input clock, any bank address may be accessed. This is the address associated with port A. 2. On the falling edge of the input clock, any other bank address may be accessed. This is the address associated with port B. 3. If port A did not issue a command on the rising edge of the input clock, then port B may access any bank address on the falling edge of the input clock. 4. From the rising edge of the input clock cycle to the next rising edge of the input clock, there is no address restriction. Port A may access any bank at any time. To clarify, the banking restriction only applies in a single clock cycle. Since the port A address is sampled on the rising edge of the input clock, there are no restrictions with port A access. Because the port B address is sampled on the falling edge of the input clock, port B has the restriction that it must use a different bank than port A. Banking Violations 1. Accesses for port A cannot cause a banking violation, only accesses to port B can. 2. If port B tries to access the same bank as port A, then the port B access to the memory array is ignored. The port A access will still occur normally. 3. If the requested cycle on port B was a write, then there will be no external indication that a banking violation occurred. 4. If the requested cycle on port B was a read, then there will be no QVLDB signal generated. Outputs will remain tristated. Address and Data Bus Inversion To reduce simultaneous switching noise and I/O current, QDR-IV XP SRAM provides the ability to invert all address and data pins. The AINV pin indicates whether the address bus, A[24:0], and the address parity bit, AP, is inverted. The address bus and parity bit are considered one group. The function of the AINV is controlled by the memory controller. However, the following rules should be used in the system design: ■ For a ×36 configuration part, 21 address pins plus 1 parity bit are used for 22 signals in the address group.If the number of 0’s in the address group is >11, AINV is set to 1 by the controller. As a result, no more than 11 pins may switch in the same direction during each bit time. Page 9 of 46 CY7C4122KV13/CY7C4142KV13 ■ For a ×18 data width part, 22 address pins plus 1 parity bit are used for 23 signals in the address group. If the number of 0’s in the address group is >12, AINV is set to 1 by the controller. As a result, no more than 12 pins may switch in the same direction during each bit time. The DINVA and DINVB pins indicate whether the corresponding DQA and DQB pins are inverted. ■ ■ For a ×36 data width part, the data bus for each port is split into groups of 18 pins. Each 18-pin data group is guaranteed to be driving less than or equal to 10 pins low on any given cycle.If the number of 0’s in the data group is >10, DINV is set to 1. As a result, no more than 10 pins may switch in the same direction during each bit time. For a ×18 data width part, the data bus for each port is split into groups of 9 pins. Each 9-pin data group is guaranteed to be driving less than or equal to five pins low on any given cycle. If the number of 0’s in the data group is >5, DINV is set to 1. As a result, no more than five pins may switch in the same direction during each bit time. AINV, DINVA[1:0], DINVB[1:0] are all active high. When set to 1, the corresponding bus is inverted. If the data inversion feature is programmed to be OFF, then the DINVA/DINVB output bits will always be driven to 0. These functions are programmable through the configuration registers and can be enabled or disabled for the address bus and the data bus independently. During configuration register read and write cycles, the address inversion input is ignored and the data inversion output is always driven to 0 when the register read data is driven on the data bus. Specifically, the register read data is driven on DQA[7:0] and the DINVA[0] bit is driven to 0. All other DQA/DQB data bits and DINVA/DINVB bits are tristated. In addition, the address parity input (AP) is ignored. Address Parity The QDR-IV XP SRAM provides an address parity feature to provide integrity on the address bus. Two pins are provided to support this function: AP and PE#. The AP pin is used to provide an even parity across the address pins. The value of AP is set so that the total number of 1’s (including the AP bit) is even. The AP pin is a DDR input. Internally, when an address parity error is detected, the access to the memory array is ignored if it was a write cycle. A read access continues normally even if an address parity error is detected. Externally, the PE# pin is used to indicate that an address parity error has occurred. This pin is Active Low and is set to 0 within RL cycles after the address parity error is detected. It remains asserted until the error is cleared through the configuration registers. The address parity function is optional and can be enabled or disabled in the configuration registers. During configuration register read and write cycles, the address parity input is ignored. Parity is not checked during these cycles. Document Number: 001-68255 Rev. *O Note The memory controller should generate address parity based on the address bus first. Address inversion is done later on the address bus and address parity bit. Port Enable The QDR-IV XP SRAM has two independent bidirectional data ports. However, some system designers may either choose to use only one port, or use one port as read-only and one port as write-only. If a port is used in a unidirectional mode, disable the data clocks (DKx/DKx# or QKx/QKx#) to reduce EMI effects in the system. In addition, disable the corresponding control input (RWx#). Port B may be programmed to be entirely disabled. If port B is not used, then the following must happen: ■ The data clocks (DKB/DKB# and QKB/QKB#) and the control inputs (LDB# and RWB#) must be disabled. ■ All data bus signals must be tri-stated. This includes DQB, DINVB, and QVLDB. ■ All input signals related to port B can be left floating or tied to either 1 or 0 without any adverse effects on the port A operation. ■ When port B is not used, all output signals related to port B are inactive. A configuration register option is provided to specify if one of the ports is not used or is operating in a unidirectional mode. On-Die Termination (ODT) Operation When enabled, the ODT circuits for the chip will be enabled during all NOP and write cycles. The ODT is temporarily disabled only during read cycles because the read data is driven out. Specifically, ODT is disabled one-half clock cycle before the first beat of the read data is driven on the data bus and remains disabled during the entire read operation. ODT is enabled again one-half clock cycle after the last beat of read data is driven on the data bus. JTAG Operation The JTAG interface uses five signals: TRST#, TCK, TMS, TDI, and TDO. For normal JTAG operation, the use of TRST# is not optional for this device. While in the JTAG mode, the following conditions are true: ■ ODT for all pins is disabled. If the JTAG function is not used in the system, then the TRST# pin must be tied to VDD and the TCK input must be driven low or tied to VSS. TMS, TDI, and TDO may be left floating. Power-Up and Reset The QDR-IV XP SRAM has specific power-up and reset requirements to guarantee reliable operation. Power-Up Sequence ■ Apply VDD before VDDQ. ■ Apply VDDQ before VREF or at the same time as VREF. Page 10 of 46 CY7C4122KV13/CY7C4142KV13 Reset Sequence Operation Modes Refer to the Reset timing diagram (Figure 16 on page 41). The QDR-IV XP SRAM has three unique modes of operation: 1. Configuration 2. Loopback 3. Memory Access 1. As the power comes up, all inputs may be in an undefined state, except RST# and TRST#, which must be LOW during tPWR. 2. The first signal that should be driven to the device is the input clock (CK/CK#), which may be unstable for the duration of tPWR. 3. After the input clock has stabilized, all the control inputs should be driven to a valid value as follows: a. RST# = 0 b. CFG# = 1 c. LBK0# = 1 d. LBK1# = 1 e. LDA# = 1 f. LDB# = 1 4. Reset should remain asserted, while all other control inputs deasserted, for a minimum time of 200 µs (tRSS). 5. At the rising edge of reset, the address bits A[13:0] are sampled to load in the ODT values and Port Enable values. After reset, internal operations in the device may start. This may include operations, such as PLL initialization and resetting internal registers. 6. However, all external control signals must remain deasserted for a minimum time of 400000 clocks (tRSH). During this time all other signals (data and address busses) should be driven to a valid level. All inputs to the device should be driven to a valid level. 7. After this, the device is in normal operating mode and ready to respond to control inputs. Typically, after a reset sequence, the system starts to perform a training sequence involving the steps outlined in the following section. However, RST# may be asserted at any time by the system and the system may wish to initiate normal read/write operations after a reset sequence, without going through another training sequence. The chip should be able to accept normal read/write operations immediately following tRSH after the deassertion of RST#. PLL Reset Operation The configuration registers contain a bit to reset the PLL. Operating the QDR-IV XP SRAM device without the PLL enabled is not supported—timing characteristics are not guaranteed when the PLL is disabled. However, this bit is intended to allow the system to reset the PLL locking circuitry. Resetting the PLL is accomplished by first programming the PLL Reset bit to 1 to disable the PLL, and then programming the bit to 0 to enable the PLL. After these steps, the PLL will relock to the input clock. A wait time of tPLL is required. These modes are defined by the level of the control signals CFG#, LBK0#, LBK1#, LDA#, LDB#. It is intended that these operations are mutually exclusive. In other words, one operation mode cannot be performed simultaneously with another operation mode. There is no priority given for inadvertently asserting the control signals at the wrong time. The internal chip behavior is not defined for improper control signal assertion. The system must strictly adhere to proper mode transitions, as defined in the following sections, for proper device operation. Configuration A Configuration operation mode is entered when the CFG# signal is asserted. Memory Access or Loopback operations should not be performed for a minimum of 32 clocks prior to entering this mode. While in this mode, the control signals LDB#, LBK0#, and LBK1# must not be asserted. However, LDA# is used to perform the actual Register Read and Write operations. Memory Access or Loopback operations should not be performed for a minimum of 32 clocks after exiting this mode. Loopback A Loopback operation mode is entered when the LBK0# and/or LBK1# signals are asserted. Memory Access or Configuration operations should not be performed for a minimum of 32 clocks prior to entering this mode. Just after entering this mode, an additional 32 clocks are required before the part is ready to accept toggling valid inputs for training. While in this mode, LDA# and LDB# may be toggled for training. Memory Access or Configuration operations should not be performed for a minimum of 32 clocks after exiting this mode. Data inversion is not used during the Loopback mode. Even if the configuration register has this feature enabled, it is temporarily ignored during the Loopback mode. Memory Access If the control signals CFG#, LBK0#, and LBK1# are not asserted, then the device is in the Memory Access mode. This mode is the normal operating mode of the device. While in this mode, a memory access cycle is performed when the LDA# and/or LDB# signals are asserted. The control signals CFG#, LBK0#, and LBK1# must not be asserted when performing a memory access cycle. A memory access should not be performed for a minimum of 32 clocks prior to leaving this mode. Document Number: 001-68255 Rev. *O Page 11 of 46 CY7C4122KV13/CY7C4142KV13 Deskew Training Sequence The QDR-IV XP SRAM provides support that allows a memory controller to deskew signals for a high-speed operation. The memory controller provides the deskew function if deskew is desired. During the deskew operation, the QDR-IV XP SRAM operates in the Loopback mode. Refer to the Loopback Timing Diagram (Figure 15 on page 40). Deskew is achieved in three steps: 1. Control/address deskew 2. Read data deskew 3. Write data deskew Control/Address Deskew Assert LBK0# to 0 and/or LBK1# to 0. The following 39 signals are looped back: The Write Training Enable bit has no effect on the read data cycles. After the data pattern is written into the memory, standard read commands permit the system to deskew with respect to the QK/QK# data output clocks the following signals: DQA, DINVA, QVLDA, DQB, DINVB, QVLDB Write Data Deskew Write data deskew is performed using write commands to the memory followed by read commands. The deskewed read data path is used to determine whether or not the write data was received correctly by the device. This permits the system to deskew with respect to the DK/DK# input data clocks the following signals: DQA, DINVA, DQB, DINVB ■ DKA0, DKA0#, DKA1, DKA1# I/O Signaling Standards ■ DKB0, DKB0#, DKB1, DKB1# Several I/O signaling standards are supported by the QDR-IV, which are programmable by the user. They are: ■ LDA#, RWA#, LDB#, RWB# ■ A[24:0], AINV, AP The clock inputs DKA0, DKA0#, DKA1#, DKB0, DKB0#, DKB1, and DKB1# are free-running clock inputs and should be continuously running during the training sequence. In addition, a wait time of tPLL is needed. Refer to Table 1 on page 14 for the loopback signal mapping. For each pin that is looped back, the input pin is sampled on both the rising and falling edges using the input clock (CK/CK#). The value output on the rising edge of the output clock (QKA/QKA#) will be the value that was sampled on the rising edge of the input clock. The value output on the falling edge of the output clock (QKA/QKA#) will be the inverted value that was sampled on the falling edge of the input clock. The delay from the input pins to the DQA outputs is tLBL, which is 16 clocks. Read Data Deskew ■ 1.2 V and 1.25 V HSTL/SSTL ■ 1.1 V and 1.2 V POD The I/O Signaling Standard is programmed on the rising edge of reset by sampling the address bus inputs. Once programmed, the value cannot be changed. Only the rising edge of another reset can change the value. All address, control, and data I/O signals — with the exception of six pins (listed as LVCMOS in the LVCMOS Signaling section) — will program to comply with HSTL/SSTL or POD. HSTL/SSTL Signaling HSTL/SSTL is supported at the VDDQ voltages of 1.2 V and 1.25 V nominal. The ODT termination values can be set to: ■ 40, 60, or 120 ohms with a 220-ohm reference resistor ■ 50 or 100 ohms with a 180-ohm reference resistor. The drive strength can be programmed to: At this time, the address, control, and data input clocks are already deskewed. ■ 40 or 60 ohms with a 220-ohm reference resistor ■ 50 ohms with a 180-ohm reference resistor Read data deskew requires a training pattern to be written into the memory using data held at constant values. A reference resistor of 180 ohms or 220 ohms is supported with HSTL/SSTL signaling. Complex data patterns, such as the following, may be written into the memory using the non-deskewed DQA and/or DQB signals and the write training enable bit. POD Signaling POD is supported at VDDQ voltages of 1.1 V and 1.2 V nominal. Write training enable set to 1: During Write Data Cycles: The First Data Beat (First Data Burst) is sampled from the data bus. The Second Data Beat (Second Data Burst) is the inverted sample from the same data bus. The ODT termination values can be set to: Write training enable set to 0: During Write Data Cycles: Both First and Second Data Beats are sampled from the data bus, which is the normal operation. ■ 50 ohms with a 180-ohm reference resistor ■ 40 or 60 ohms with a 220-ohm reference resistor Document Number: 001-68255 Rev. *O ■ 50 or 100 ohms with a 180-ohm reference resistor ■ 60 or 120 ohms with a 220-ohm reference resistor The drive strength can be programmed to: A reference resistor of 180 ohms or 220 ohms is supported with POD signaling. Page 12 of 46 CY7C4122KV13/CY7C4142KV13 LVCMOS Signaling The following flowchart illustrates the initialization procedure: Six I/O signals are permanently set to use LVCMOS signaling at a voltage of 1.3-V nominal. These signals are referenced to the core voltage supply, VDD. They are: Figure 3. Flowchart illustrating initialization procedure RST#, TRST#, TCK, TMS, TDI, and TDO All the five JTAG signals as well as the main reset input are 1.3-V LVCMOS. In addition, ODT is disabled at all times on these LVCMOS signals. Initialization The QDR-IV XP SRAM must be initialized before it can operate in the normal functional mode. Initialization uses four special pins: ■ RST# pin to reset the device ■ CFG# pin to program the configuration registers ■ LBK0# and LBK1# pins for the loopback function Power on Apply power to the chip as described in the power-up sequence in Power-Up Sequence. Reset Chip Apply reset to the QDR-IV XP SRAM as described in Reset Sequence. Configure the Impedance Assert Config (CFG# = 0) and program the impedance control register. Wait for the PLL to Lock Since the input impedance is updated, allow the PLL time (tPLL) to lock to the input clock. Document Number: 001-68255 Rev. *O Page 13 of 46 CY7C4122KV13/CY7C4142KV13 Configure Training Options At this time, the address and data inversion options need to be programmed. In addition, the write training function needs to be enabled. Assert Config (CFG# = 0) and program: Table 1. Loopback Signal Mapping Input Pin Input Pin Input Pin LBK0# = 0 LBK1# = 0 LBK0# = 0 LBK1# = 1 LBK0# = 1 LBK1# = 0 Output Pin ■ Write Training (Turn On) A0 A13 DKA0 DQA0 ■ Address Inversion Enable A1 A14 DKA0# DQA1 ■ Data Inversion Enable A2 A15 DKA1 DQA2 A3 A16 DKA1# DQA3 A4 A17 LDA# DQA4 A5 A18 RWA# DQA5 A6 A19 DKB0 DQA6 A7 A20 DKB0# DQA7 A8 A21 DKB1 DQA8 A9 A22 DKB1# DQA9 Control/Address Deskew Control and address deskew can now be performed by the memory controller. Read Data Deskew After control and address deskew, the read data path is deskewed as previously described in Deskew Training Sequence. Write Data Deskew A10 A23 LDB# DQA10 Write data path is deskewed following the read data path deskew. A11 A24 RWB# DQA11 A12 AINV AP DQA12 Configure Runtime Options After the training is complete, disable the write training function. Finally, enable the address parity option at this time. Assert Config (CFG# = 0) and program: ■ Write Training (Turn off) ■ Parity Enable Normal Operation If the system detects a need to deskew again, the process must start again from the Configure Training Options step.The following table defines the loopback mapping: Configuration Registers The QDR-IV XP SRAM contains internal registers that are programmed by the system using a special configuration cycle. These registers are used to enable and control several options, as described this section. All registers are 8-bits wide. The write operation is performed using only the address pins to define the register address and register write data. For a read operation, the register read data is provided on the data port A output pins. Refer to Figure 14 on page 39 for programming details. During the rising edge of RST#, the address pins A[13:0] are sampled. The value sampled becomes the reset value of certain bits in the registers defined in Table 2 on page 15. This is used to set termination, impedance, and port configuration values immediately upon reset. These values can be overwritten later through a register write operation. When a parity error occurs, the complete address of the first error is recorded in registers 4, 5, 6, and 7 along with the port A/B error bit. The port A/B error bit will indicate from which port the address parity error came — 0 for port A and 1 for port B. This information will remain latched until cleared by writing a 1 to the address parity error clear bit in register 3. Two counters are used to indicate if multiple address parity errors occurred. The Port A error count is a running count of the number of parity errors on port A addresses, and similarly the port B error count is a running count of the number of parity errors on port B addresses. They will each independently count to a maximum value of 3 and then stop counting. These counters are free-running and they are both reset by writing a 1 to the address parity error clear bit in register 3. Document Number: 001-68255 Rev. *O Page 14 of 46 CY7C4122KV13/CY7C4142KV13 Configuration Registers Description Table 2. Configuration Register Table Register Address 0 1 2 3 4 5 6 7 Description Termination Control Register Impedance Control Register Option Control Register Function Control Register Address Parity Status Register 0 Address Parity Status Register 1 Address Parity Status Register 2 Address Parity Status Register 3 Configuration Register Definitions Table 3. Address 0: Termination Control Register (Read/Write) ODT Global Enable ODT/ZQ Auto Update Address / Command Input Group IU[2] Address / Command Input Group IU[1] Address / Command Input Group IU[0] Bit Location 7 6 5 4 3 2 1 0 Reset Value A7 A6 A5 A4 A3 A2 A1 A0 Function Clock Input Clock Input Clock Input Group KU[2] Group KU[1] Group KU[0] Note: ODT/ZQ Auto Update needs to be turned on if ODT/ZQ configuration is changed Table 4. Address 1: Impedance Control Register (Read/Write) Function Pull-Down Pull-Down Pull-Up Pull-Up Group PD[1] Group PD[0] Group PU[1] Group PU[0] Unused Data Input Data Input Data Input Group QU[2] Group QU[1] Group QU[0] Bit Location 7 6 5 4 3 2 1 0 Reset Value 1 0 1 0 0 A10 A9 A8 Port Enable[1] Port Enable[0] Table 5. Address 2: Option Control Register (Read/Write Bits 7-3) (Read-Only Bits 2-0) [2] Function Write Train Enable Data Inv Enable Address Inv Enable Address Parity Enable PLL Reset Bit Location 7 6 5 4 3 2 1 0 Reset Value 0 0 0 0 0 A13 A12 A11 Unused Unused Unused Unused Address Parity Error Clear I/O Type Table 6. Address 3: Function Control Register (Write Only) Function Unused Unused Unused Bit Location 7 6 5 4 3 2 1 0 Reset Value 0 0 0 0 0 0 0 0 Note 2. The Bits 2-0 are read only and can be changed only on the rising edge of reset Document Number: 001-68255 Rev. *O Page 15 of 46 CY7C4122KV13/CY7C4142KV13 Table 7. Address 4: Address Parity Status Register 0 (Read Only) Function Port B Error Count (1:0) Port A Error Count (1:0) Bit Location 7:6 5:4 3 2 1 0 Reset Value 00 00 0 0 0 0 Port A/B Error AINV Bit Unused Unused Table 8. Address 5: Address Parity Status Register 1 (Read Only) Function Address (23:16) Bit Location 7:0 Reset Value 00000000 Note: Unused address locations will be read as 0 Table 9. Address 6: Address Parity Status Register 2 (Read Only) Function Address (15:8) Bit Location 7:0 Reset Value 00000000 Table 10. Address 7: Address Parity Status Register 3 (Read Only) Function Address (7:0) Bit Location 7:0 Reset Value 00000000 Document Number: 001-68255 Rev. *O Page 16 of 46 CY7C4122KV13/CY7C4142KV13 I/OType and Port Enable Bit Definitions Table 11. I/O Type Bit Definition specified in Address 2: Option Control Register I/O Type Function 0 HSTL / SSTL 1 POD Table 12. Port Enable Bit Definition specified in Address 2: Option Control Register Port Enable [1:0] Function Port B Mode Port A Mode Port B Clocks and Controls Port A Clocks and Controls 0 0 Fixed Port Mode Write Only Read Only DKB - On QKB - Off LDB# - On RWB# - Off DKA - Off QKA - On LDA# - On RWA# - Off 0 1 Only Port A Enable Disabled Enabled DKB - Off QKB - Off LDB# - Off RWB# - Off DKA - On QKA - On LDA# - On RWA# - On 1 0 Not supported Disabled Disabled DKB - Off QKB - Off LDB# - Off RWB# - Off DKA - Off QKA - Off LDA# - Off RWA# - Off 1 Both Ports Enabled Enabled DKB - On QKB - On LDB# - On RWB# - On DKA - On QKA - On LDA# - On RWA# - On 1 Document Number: 001-68255 Rev. *O Enabled Page 17 of 46 CY7C4122KV13/CY7C4142KV13 ODT Termination Bit Definitions Table 13. Clock Input Group Bit Definition specified in Address 0: Termination Control Register ODT Global Enable 0 1 1 1 1 1 1 1 1 Divisor Value KU[2:0] X 0 0 0 0 1 1 1 1 X 0 0 1 1 0 0 1 1 X 0 1 0 1 0 1 0 1 – – 8.33% 12.50% 16.67% 25% 50% – – Termination Value HSTL/SSTL Mode ZT 180 ohm ZT 220 ohm OFF OFF OFF OFF Not supported Not supported Not supported Not supported Not supported 40 ohm 50 ohm 60 ohm 100 ohm 120 ohm Not supported Not supported Not supported Not supported Termination Value POD Mode ZT 180 ohm OFF OFF Not supported Not supported Not supported 50 ohm 100 ohm Not supported Not supported ZT 220 ohm OFF OFF Not supported Not supported Not supported 60 ohm 120 ohm Not supported Not supported Note: Termination values are accurate to +/- 15% ZQ tolerance is 1% Table 14. Address/Command Input Group Bit Definition specified in Address 0: Termination Control Register ODT Global Enable 0 1 1 1 1 1 1 1 1 Divisor Value IU[2:0] X 0 0 0 0 1 1 1 1 X 0 0 1 1 0 0 1 1 X 0 1 0 1 0 1 0 1 – – 8.33% 12.50% 16.67% 25% 50% – – Termination Value HSTL/ SSTL Mode ZT 180 ohm ZT 220 ohm OFF OFF OFF OFF Not supported Not supported Not supported Not supported Not supported 40 ohm 50 ohm 60 ohm 100 ohm 120 ohm Not supported Not supported Not supported Not supported Termination Value POD Mode ZT 180 ohm OFF OFF Not supported Not supported Not supported 50 ohm 100 ohm Not supported Not supported ZT 220 ohm OFF OFF Not supported Not supported Not supported 60 ohm 120 ohm Not supported Not supported Note: Termination values are accurate to +/- 15% ZQ tolerance is 1% Table 15. Data Input Group Bit Definition specified in Address 1: Impedance Control Register ODT Global Enable 0 1 1 1 1 1 1 1 1 Divisor Value QU[2:0] X 0 0 0 0 1 1 1 1 X 0 0 1 1 0 0 1 1 X 0 1 0 1 0 1 0 1 – – 8.33% 12.50% 16.67% 25% 50% – – Termination Value HSTL/ SSTL Mode ZT 180 ohm ZT 220 ohm OFF OFF OFF OFF Not supported Not supported Not supported Not supported Not supported 40 ohm 50 ohm 60 ohm 100 ohm 120 ohm Not supported Not supported Not supported Not supported Termination Value POD Mode ZT 180 ohm OFF OFF Not supported Not supported Not supported 50 ohm 100 ohm Not supported Not supported ZT 220 ohm OFF OFF Not supported Not supported Not supported 60 ohm 120 ohm Not supported Not supported Note: Termination values are accurate to +/- 15% ZQ tolerance is 1% Document Number: 001-68255 Rev. *O Page 18 of 46 CY7C4122KV13/CY7C4142KV13 Drive Strength Bit Definitions Table 16. Pull-Up Driver Bit Definition specified in Address 1: Impedance Control Register Divisor Value PU[1:0] Impedance Value HSTL/ SSTL Mode Impedance Value POD Mode ZT 180 ohm ZT 220 ohm ZT 180 ohm ZT 220 ohm 0 0 14.17% Not supported Not supported Not supported Not supported 0 1 16.67% Not supported 40 ohm Not supported 40 ohm 1 0 25% 50 ohm 60 ohm 50 ohm 60 ohm 1 1 – Not supported Not supported Not supported Not supported Note: Termination values are accurate to +/- 15% ZQ tolerance is 1% Table 17. Pull-Down Driver Bit Definition specified in Address 1: Impedance Control Register Divisor Value PD[1:0] Impedance Value HSTL/ SSTL Mode Impedance Value POD Mode ZT 180 ohm ZT 220 ohm ZT 180 ohm ZT 220 ohm 0 0 14.17% Not supported Not supported Not supported Not supported 0 1 16.67% Not supported 40 ohm Not supported 40 ohm 1 0 25% 50 ohm 60 ohm 50 ohm 60 ohm 1 1 – Not supported Not supported Not supported Not supported Note: Termination values are accurate to +/- 15% ZQ tolerance is 1% Document Number: 001-68255 Rev. *O Page 19 of 46 CY7C4122KV13/CY7C4142KV13 IEEE 1149.1 Serial Boundary Scan (JTAG) QDR-IV XP SRAMs incorporate a serial boundary scan test access port (TAP) in the FCBGA package. This part is fully compliant with IEEE Standard #1149.1-2001. In the JTAG mode, the ODT feature for all pins is disabled. If the JTAG function is not used in the circuit, then TCK inputs must be driven low or tied to VSS. TRST#, TMS, TDI, and TDO may be left floating. An internal pull-up resistor is implemented on the TRST#, TMS, and TDI inputs to ensure that these inputs are HIGH during tPWR. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in TAP Controller Block Diagram on page 23. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a RST state, as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test path. Test Access Port Bypass Register Test Clock (TCK) To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This enables shifting of data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see TAP Controller State Diagram on page 22. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register. Test Data-Out (TDO) The TDO output pin is used to serially clock data out from the registers. The output is active, depending upon the current state of the TAP state machine (see Instruction Codes on page 26). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. Test Reset (TRST#) The TRST# input pin is used to reset the TAP controller. Alternatively, a reset may be performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This reset does not affect the operation of the SRAM and can be performed while the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a high Z state. TAP Registers Registers are connected between the TDI and TDO pins to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Document Number: 001-68255 Rev. *O Boundary Scan Register The boundary scan register is connected to all of the input and output pins on the SRAM. Several No Connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The boundary scan register is loaded with the contents of the RAM input and output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the input and output ring. Boundary Scan Order on page 27 shows the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in Identification Register Definitions on page 26. TAP Instruction Set Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Instruction Codes on page 26. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in this section in detail. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. Page 20 of 46 CY7C4122KV13/CY7C4142KV13 IDCODE The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power-up or whenever the TAP controller is supplied a Test-Logic-RST state. SAMPLE Z The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High Z state until the next command is supplied during the Update IR state. Both Port A and Port B are enabled once this command has been executed. EXTEST SAMPLE/PRELOAD EXTEST OUTPUT BUS TRISTATE SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the input and output pins is captured in the boundary scan register. Remember that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that an input or output undergoes a transition during the Capture-DR state. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. The EXTEST instruction drives the preloaded data out through the system output pins. This instruction also connects the boundary scan register for serial access between the TDI and TDO in the Shift-DR controller state. Both Port A and Port B are enabled after this command is executed. IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tristate mode. The boundary scan register has output enable control bits located at Bit #49 and Bit #50. Bit# 49 enables the output pins for DQB and Bit#50 enables DQA and PE# pins. When these scan cells, called the “extest output bus tristate,” are latched into the preload register during the Update-DR state in the TAP controller, they directly control the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a High Z condition. These bits can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, these bits directly controls the output Q-bus pins. Note that these bits are pre-set LOW to disable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-RST state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. Document Number: 001-68255 Rev. *O Page 21 of 46 CY7C4122KV13/CY7C4142KV13 TAP Controller State Diagram Figure 4. TAP Controller State Diagram [3] 1 TEST-LOGIC RST 0 0 TEST-LOGIC/ IDLE 1 SELECT DR-SCAN 1 1 SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-IR 1 0 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 PAUSE-DR 0 0 0 1 0 Note 3. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-68255 Rev. *O Page 22 of 46 CY7C4122KV13/CY7C4142KV13 TAP Controller Block Diagram Figure 5. TAP Controller Block Diagram 0 Bypass Register 2 Selection Circuitry TDI 1 0 Selection Circuitry Instruction Register 31 30 29 . . 2 1 0 1 0 TDO Identification Register 135 . . . . 2 Boundary Scan Register TCK TMS TAP Controller TRST# Document Number: 001-68255 Rev. *O Page 23 of 46 CY7C4122KV13/CY7C4142KV13 TAP Electrical Characteristics Over the Operating Range Min Max Unit VOH Parameter LVCMOS high-level output voltage Description IOH = 100µA Test Conditions VDD × 0.8 – V VOL LVCMOS low-level output voltage IOL = 100 µA – VDD × 0.2 V VIH LVCMOS high-level input voltage (DC) VDD × 0.7 VDD + 0.2 V VIL LVCMOS low-level input voltage (DC) –0.2 VDD × 0.3 V IX LVCMOS input leakage current – 10 A IOZ LVCMOS output leakage current – 10 A Min Max Unit 50 – ns TAP AC Switching Characteristics Over the Operating Range Parameter Description tTCYC TCK clock cycle time tTF TCK clock frequency – 20 MHz tTH TCK clock HIGH 20 – ns tTL TCK clock LOW 20 – ns tTMSS TMS setup to TCK clock rise 5 – ns tTDIS TDI setup to TCK clock rise 5 – ns tCS Capture setup to TCK rise 5 – ns tTMSH TMS hold after TCK clock rise 5 – ns tTDIH TDI hold after clock rise 5 – ns tCH Capture hold after clock rise 5 – ns tTDOV TCK clock LOW to TDO valid – 10 ns tTDOX TCK clock LOW to TDO invalid 0 – ns Setup Times Hold Times Output Times Note: tCS and tCH refer to setup and hold time requirements of latching data from the boundary scan register. Document Number: 001-68255 Rev. *O Page 24 of 46 CY7C4122KV13/CY7C4142KV13 TAP Timing Diagram Figure 6. TAP Timing Diagram Document Number: 001-68255 Rev. *O Page 25 of 46 CY7C4122KV13/CY7C4142KV13 Identification Register Definitions Value Instruction Field CY7C4122KV13 CY7C4142KV13 000 000 Cypress Device ID (28:12) 11011010101010011 11011010101100011 Cypress JEDEC ID (11:1) 00000110100 00000110100 ID Register Presence (0) 1 1 Revision Number (31:29) Description Version number. Defines the type of SRAM. Allows unique identification of SRAM vendor. Indicates the presence of an ID register. Scan Register Sizes Register Name Bit Size Instruction 3 Bypass 1 ID 32 Boundary Scan 136 Instruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the input and output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the input and output contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document Number: 001-68255 Rev. *O Page 26 of 46 CY7C4122KV13/CY7C4142KV13 Boundary Scan Order Bit Bump 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 12A 13B 14A 15B 16A 18B 17C 16C 14C 12C 12D 13D 15D 17D 18E 15F 16F 17F 18G 16G 17H 15H 16J 18J 18K 18L 16L 15M 17M 18N 16N 15P 16P 17P 18R 17T 15T 13T 12T 12U 14U 16U 17U 18V 15V 13V 12W Document Number: 001-68255 Rev. *O CY7C4142KV13 × 36 Device DQA<26> DQA<19> DQA<25> DQA<35> DQA<23> DQA<31> QVLDA<1> QKA<1> DQA<20> DQA<18> DINVA<1> DQA<22> DQA<21> QKA#<1> DQA<32> DQA<24> DKA<1> DKA#<1> DQA<33> DQA<34> DQA<27> DQA<28> DQA<30> DQA<29> RST# DQB<29> DQB<30> DQB<28> DQB<27> DQB<33> DQB<34> DQB<24> DKB<1> DKB#<1> DQB<32> QKB#<1> DQB<21> DQB<22> DINVB<1> DQB<18> DQB<20> QKB<1> QVLDB<1> DQB<31> DQB<35> DQB<19> DQB<26> CY7C4122KV13 × 18 Device DQA<17> DQA<10> DQA<16> NC DQA<14> NC QVLDA<1> QKA<1> DQA<11> DQA<9> DINVA<1> DQA<13> DQA<12> QKA#<1> NC DQA<15> DKA<1> DKA#<1> NC NC NC NC NC NC RST# NC NC NC NC NC NC DQB<15> DKB<1> DKB#<1> NC QKB#<1> DQB<12> DQB<13> DINVB<1> DQB<9> DQB<11> QKB<1> QVLDB<1> NC NC DQB<10> DQB<17> Page 27 of 46 CY7C4122KV13/CY7C4142KV13 Boundary Scan Order (continued) Bit Bump 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 14W 16W Document Number: 001-68255 Rev. *O 10V 8P 7N 9N 10P 10N 11N 12P 13N 13L 12M 11L 10L 10M 9L 8M 7L 7J 9J 10K 10J 11J 13J 12H 10H 8H 7G 9G 10G 11G 13G 12F 10F 8F 10D 10B 10A 8A 7B 6A 5B 4A 2B 3C 4C CY7C4142KV13 × 36 Device DQB<25> DQB<23> Internal_DQB Internal_DQA PE# A<15> A<9> NC/1152M AP A<2> NC/2304M A<16> A<10> A<8> A<12> A<18> RWB# AINV A<17> A<11> A<7> A<5> A<19> CK# CK A<20> A<6> LDB# RWA# LDA# A<3> NC/288M A<1> NC/576M A<4> A<14> A<0> A<13> CFG# LBK#<1> LBK#<0> DQA<8> DQA<1> DQA<7> DQA<17> DQA<5> DQA<13> QVLDA<0> QKA<0> CY7C4122KV13 × 18 Device DQB<16> DQB<14> Internal_DQB Internal_DQA PE# A<15> A<9> NC/576M AP A<2> NC/1152M A<16> A<10> A<8> A<12> A<18> RWB# AINV A<17> A<11> A<7> A<5> A<19> CK# CK A<20> A<6> LDB# RWA# LDA# A<3> A<21> A<1> NC/288M A<4> A<14> A<0> A<13> CFG# LBK#<1> LBK#<0> DQA<8> DQA<1> DQA<7> NC DQA<5> NC QVLDA<0> QKA<0> Page 28 of 46 CY7C4122KV13/CY7C4142KV13 Boundary Scan Order (continued) Bit Bump 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 6C 8C 8D 7D 5D 3D 2E 3F 4F 5F 4G 2G 3H 5H 4J 2J 2L 4L 5M 3M 2N 4N 5P 4P 3P 2R 3T 5T 7T 8T 8U 6U 4U 3U 2V 5V 7V 8W 6W 4W Document Number: 001-68255 Rev. *O CY7C4142KV13 × 36 Device DQA<2> DQA<0> DINVA<0> DQA<4> DQA<3> QKA#<0> DQA<14> DKA#<0> DKA<0> DQA<6> DQA<16> DQA<15> DQA<9> DQA<10> DQA<12> DQA<11> DQB<11> DQB<12> DQB<10> DQB<9> DQB<15> DQB<16> DQB<6> DKB<0> DKB#<0> DQB<14> QKB#<0> DQB<3> DQB<4> DINVB<0> DQB<0> DQB<2> QKB<0> QVLDB<0> DQB<13> DQB<17> DQB<1> DQB<8> DQB<7> DQB<5> CY7C4122KV13 × 18 Device DQA<2> DQA<0> DINVA<0> DQA<4> DQA<3> QKA#<0> NC DKA#<0> DKA<0> DQA<6> NC NC NC NC NC NC NC NC NC NC NC NC DQB<6> DKB<0> DKB#<0> NC QKB#<0> DQB<3> DQB<4> DINVB<0> DQB<0> DQB<2> QKB<0> QVLDB<0> NC NC DQB<1> DQB<8> DQB<7> DQB<5> Page 29 of 46 CY7C4122KV13/CY7C4142KV13 Maximum Ratings Operating Range Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Table 18. Operating Range Storage temperature ................................ –65 °C to +150 °C Range Ambient temperature with power applied ................................... –55 °C to +125 °C Commercial Maximum junction temperature ................................. 125 °C Supply voltage on VDD relative to GND ..................................–0.3 V to +1.35 V Supply voltage on VDDQ relative to GND ................................–0.3 V to +1.35 V DC input voltage ........................................–0.3 V to +1.35 V Current into outputs (low) ........................................... 20 ma Static discharge voltage (MIL-STD-883, M. 3015) ......................................... > 2001V Latch up current ..................................................... > 200 mA Industrial Ambient Temperature (TA) VDD VDDQ 0 °C to +70 °C 1.3V ± 40 mV 1.2 V ± 50 mV -40 °C to +85 °C 1.1 V ± 50 mV Neutron Soft Error Immunity Table 19. Neutron Soft Error Immunity Test Parameter Description Conditions Typ Max* Unit LSBU Logical single-bit upsets 25 °C 0 0.01 FIT/Mb LMBU Logical multi-bit upsets 25 °C 0 0.01 FIT/Mb Single event latch-up 85 °C 0 0.1 FIT/Dev SEL * No LMBU or SEL events occurred during testing; this column represents a statistical 2, 95% confidence limit calculation. For more details refer to Application Note, Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates – AN54908. Electrical Characteristics Over the Operating Range Parameter Description POD Signaling Mode VDD[4] Core supply voltage (1.3 V ± 40 mV) [4] VDDQ POD I/O supply voltage (1.1 V ± 50 mV) POD I/O supply voltage (1.2 V ± 50 mV) VREF [4, 5] POD reference voltage [4] VOL(DC) POD low-level output voltage (DC) VIH(DC) [4, 6] POD high-level input voltage (DC) [4, 6] VIL(DC) POD low level input voltage VIH(AC) [4, 7] POD high-level input voltage (DC) VIL(AC) [4, 7] POD low-level input voltage VMP(DC) POD differential input mid-point voltage; Pin and Pin# VID(DC) POD differential input differential voltage (DC); Pin and Pin# VID(AC) POD differential input differential voltage (AC); Pin and Pin# VIN POD single-ended input voltage; Pin and Pin# VINS POD single-ended input voltage slew rate; Pin and Pin# VIX(AC) Min Typ Max Unit 1.26 1.05 1.15 VDDQ × 0.69 – VREF + 0.08 –0.15 VREF + 0.15 – VREF – 0.08 0.16 0.30 0.27 3 1.3 1.1 1.2 VDDQ × 0.7 – – – – – – – – – – 1.34 1.15 1.25 VDDQ × 0.71 0.5 VDDQ + 0.15 VREF – 0.08 – VREF – 0.15 VREF + 0.08 – – VDDQ + 0.15 – V V V V V V V V V V V V V V/ns – VREF + 0.08 V POD differential input crossing point voltage (AC); Pin and Pin# VREF – 0.08 Notes 4. All voltages referenced to VSS (GND). 5. Peak to Peak AC noise on VREF must not exceed +/–2% VDDQ(DC). 6. VIH/VIL(DC) are specified with ODT disabled. 7. VIH/VIL(AC) is a test condition specified to guarantee at which the receiver must meet its timing specifications with ODT enabled. Document Number: 001-68255 Rev. *O Page 30 of 46 CY7C4122KV13/CY7C4142KV13 Electrical Characteristics (continued) Over the Operating Range Parameter IX [8] IOZ [8] IDD[9, 10] Description POD input leakage current POD output leakage current VDD operating supply (1066 MHz, × 18) VDD operating supply (1066 MHz, × 36) VDD operating supply (933 MHz, × 18) VDD operating supply (933 MHz, × 36) HSTL/SSTL Signaling Mode VDD[11] Core supply voltage (1.3 V ±40 mV) VDDQ [11] I/O supply voltage (1.2 V ±50 mV) VREF(DC) [11, 12] VREF(AC) [11, 12] VIH(DC) [11, 13] VIL(DC) [11, 13] VIH(AC) [11, 14] VIL(AC) [11, 14] VOH(DC) [11] VOL(DC) [11] VIX VDIF(AC) VDIF(DC) VDIF(CM) VOX VOUT(AC) VOUT(DC) IX [8] IOZ [8] IDD[9, 10] I/O supply voltage (1.25 V ±50 mV) HSTL/SSTL reference voltage (DC) HSTL/SSTL reference voltage (AC) HSTL/SSTL high-level input voltage (DC) HSTL/SSTL low-level input voltage (DC) HSTL/SSTL high-level input voltage (AC) HSTL/SSTL low-level input voltage (AC) HSTL/SSTL high-level output voltage (DC) – IOH = –0.25 × VDDQ/ROH HSTL/SSTL low-level output voltage (DC) – IOL = 0.25 × VDDQ/ROL HSTL/SSTL input voltage cross-point HSTL/SSTL AC input differential voltage HSTL/SSTL DC input differential voltage HSTL/SSTL DC common mode input HSTL/SSTL output voltage cross-point HSTL/SSTL AC output voltage HSTL/SSTL DC output voltage HSTL/SSTL input leakage current HSTL/SSTL output leakage current VDD operating supply (1066 MHz, × 18) VDD operating supply (1066 MHz, × 36) VDD operating supply (933 MHz, × 18) VDD operating supply (933 MHz, × 36) Min Typ Max Unit – – – – – – – – 2800 3920 2520 3520 200 200 4100 4500 3400 4000 µA µA mA mA mA mA 1.26 1.15 1.3 1.2 1.34 1.25 V V 1.3 VDDQ × 0.52 VDDQ × 0.53 VDDQ + 0.15 VREF – 0.08 VDDQ + 0.24 VREF – 0.15 – V V V V V V V V VDDQ × 0.25 VDDQ × 0.288 V 1.2 1.25 VDDQ × 0.48 VDDQ × 0.5 VDDQ × 0.47 VDDQ × 0.5 VREF + 0.08 – –0.15 – VREF + 0.15 – –0.24 – VDDQ × 0.712 VDDQ × 0.75 – – 0.30 0.16 VDDQ × 0.4 – –0.24 –0.15 – – – – – – VDDQ × 0.5 – – VDDQ × 0.5 VDDQ × 0.5 – – – – 2800 3920 2520 3520 – VDDQ + 0.48 VDDQ + 0.30 VDDQ × 0.6 – VDDQ + 0.24 VDDQ + 0.15 200 200 4100 4500 3400 4000 V V V V V V V µA µA mA mA mA mA Notes 8. Output driver into High Z with ODT disabled. 9. The operation current is calculated with 50% read cycle and 50% write cycle. 10. Typical operation current specifications are tested at 1.3V VDD. 11. All voltages referenced to VSS (GND). 12. Peak to Peak AC noise on VREF must not exceed +/–2% VDDQ(DC). 13. VIH/VIL(DC) are specified with ODT disabled. 14. VIH/VIL(AC) is a test condition specified to guarantee at which the receiver must meet its timing specifications with ODT enabled. Document Number: 001-68255 Rev. *O Page 31 of 46 CY7C4122KV13/CY7C4142KV13 Capacitance Table 20. Capacitance Parameter [15] Description CIN Input capacitance CO Output capacitance Test Conditions Max Unit 4 pF 4 pF TA = 25 C, f = 1 MHz, VDD = 1.3 V, VDDQ = 1.25 V Thermal Resistance Table 21. Thermal Resistance Parameter [15] JA Description Thermal resistance (junction to ambient) Test Conditions Test conditions follow standard With Still Air (0 m/s) test methods and procedures for With Air Flow (1 m/s) measuring thermal impedance, in accordance with EIA/JESD51. With Air Flow (3 m/s) 361-ball FCBGA Package Unit 12.00 °C/W 10.57 °C/W 9.09 °C/W JB Thermal resistance (junction to board) 3.03 °C/W JC Thermal resistance (junction to case) 0.029 °C/W AC Test Load and Waveform Figure 7. AC Test Load and Waveform Note 15. Tested initially and after any design or process change that may affect these parameters. Document Number: 001-68255 Rev. *O Page 32 of 46 CY7C4122KV13/CY7C4142KV13 Switching Characteristics Over the Operating Range [16, 17, 18, 19, 20, 21, 22, 23] Cypress Parameter Description 1066 MHz 933 MHz Min Max Min Max Unit tCK CK, DKx, QKx clock period 0.938 3.333 1.071 3.333 ns tCKL CK, DKx LOW time 0.45* – 0.45* – tCK tCKH CK, DKx HIGH time tJIT(per) Clock period jitter tJIT(cc) Cycle-to-cycle jitter tAS A to CK setup tAH CK to A hold tASH CK to A setup-hold window tCS tCH 0.45* – 0.45* – tCK –0.055 0.055 –0.060 0.060 ns – 0.110 – 0.120 ns 0.125 – 0.135 – ns 0.125 – 0.135 – ns 0.170 – 0.180 – ns LDx#, RWx# to CK setup 0.150 – 0.180 – ns CK to LDx#, RWx# hold 0.150 – 0.180 – ns tCSH CK to LDx#, RWx# setup-hold window 0.170 – 0.180 – ns tCKDK CK to DKx skew –0.15 0.15 –0.172 0.172 ns tIS DQx, DINVx to DKx setup 0.125 – 0.135 – ns tIH DKx to DQx, DINVx hold 0.125 – 0.135 – ns tISH0 DKx[0] to DQx[17:0], DINVx[0] (× 36) or DKx[0] to DQx[8:0], DINVx[0] (× 18) setup-hold window 0.150 – 0.180 – ns tISH1 DKx[1] to DQx[35:18], DINVx[1] (× 36) or DKx[1] to DQx[17:9], DINVx[1] (× 18) setup-hold window 0.150 – 0.180 – ns tRise (se) Single-ended output signal rise time 20%-80% 2 6 2 6 V/ns tFall (se) Single-ended output signal fall time 20%-80% 2 6 2 6 V/ns tRise (diff) Differential output signal rise time 20%-80% 3 10 3 10 V/ns tFall (diff) Differential output signal fall time 20%-80% 3 10 3 10 V/ns tQKL QKx LOW time 0.45* – 0.45* – tCK tQKH QKx HIGH time 0.45* – 0.45* – tCK tCKQK CK to QKx skew –0.225 0.225 –0.257 0.257 ns tQKQ0 QKx[0] to DQx[17:0], DINVx[0] (× 36) or QKx[0] to DQx[8:0], DINVx[0] (× 18) – 0.075 – 0.085 ns tQH0 QKx[0] to DQx[17:0], DINVx[0] (× 36) or QKx[0] to DQx[8:0], DINVx[0] (× 18) 0.40* – 0.40* – tCK tQKQ1 QKx[1] to DQx[35:18], DINVx[1] (× 36) or QKx[1] to DQx[17:9], DINVx[1] (× 18) – 0.075 – 0.085 ns tQH1 QKx[1] to DQx[35:18], DINVx[1] (× 36) or QKx[1] to DQx[17:9], DINVx[1] (× 18) 0.40* – 0.40* – tCK Notes 16. x refers to Port A and Port B. For example, DQx refers to DQA and DQB. 17. Input hold timing assumes rising edge slew rate of 4 V/ns measured from VIL/VIH (DC) to VREF. 18. Input setup timing assumes falling edge slew rate of 4 V/ns measured from VREF to VIL/VIH (AC). 19. All output timing assumes the load shown in Figure 7 on page 32. 20. Setup/hold window, tASH, tCSH, tISH are used for pin to pin timing budgeting and cannot be directly applied without performing de-skew training. 21. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 22. Frequency drift is not allowed. 23. tQKL, tQKH, tQKQ, tQKQX, tASH, tCSH and tISH are guaranteed by design. Document Number: 001-68255 Rev. *O Page 33 of 46 CY7C4122KV13/CY7C4142KV13 Switching Characteristics (continued) Over the Operating Range [16, 17, 18, 19, 20, 21, 22, 23] Cypress Parameter Description 1066 MHz 933 MHz Min Max Min Max Unit tQKQV0 QKx[0] to QVLDx – 0.112 – 0.128 ns tQVH0 QKx[0] to QVLDx 0.85* – 0.85* – tCK tQKQV1 QKx[1] to QVLDx – 0.112 – 0.128 ns tQVH1 QKx[1] to QVLDx 0.85* – 0.85* – tCK tPWR VDD (Typical) to the first access 200 – 200 – ms tRSS RST# pulse width 200 – 200 – µs tRSH RST# deasserted to first active command 400000* – 400000* – tCK tRDS A to RST# setup 500* – 500* – tCK tRDH A to RST# hold 500* – 500* – tCK tTSS TRST# pulse width 200 – 200 – µs tTSH TRST# deasserted to first JTAG command 200 – 200 – µs tPLL Time for PLL to stabilize after being reset – 100 – 100 µs tLBL Loopback latency 16* 16* 16* 16* tCK tCD Loopback output delay – 5 – 5 ns tCFGS Active mode to Configuration mode 32* – 32* – tCK tCFGH Configuration mode to Active mode Register Access without ODT or PLL programming updates 32* – 32* – tCK tCFGH Configuration mode to Active mode Register Access with ODT programming updates 4096* – 4096* – tCK tCFGH Configuration mode to Active mode Register Access with PLL programming updates 100 – 100 – µs tCFGD Configuration command to Configuration command 80* – 80* – tCK tCLDS CFG# assertion to LDA# assertion 32* – 32* – tCK tCLDH LDA# deassertion to CFG# deassertion 32* – 32* – tCK tCLDW LDA# pulse width for Configuration command 16* – 16* – tCK tCRDL LDA# assertion to Read Data Latency – 32* – 32* tCK tCRDH CFG# deassertion to Read Data Hold 0* 32* 0* 32* tCK tDQVLD DQAx to QVLDA<0> in Configuration mode –2 2 –2 2 tCK Document Number: 001-68255 Rev. *O Page 34 of 46 CY7C4122KV13/CY7C4142KV13 Switching Waveforms Figure 8. Rise and Fall Time Definitions for Output Signals Nominal Rise-Fall Time Definition for Single-Ended Output Signals Nominal Rise-Fall Time Definition for Differential Output Signals Document Number: 001-68255 Rev. *O Page 35 of 46 CY7C4122KV13/CY7C4142KV13 Switching Waveforms (continued) Figure 9. Input and Output Timing Waveforms Address and Command Input Timing Data Input Timing Data Output Timing Document Number: 001-68255 Rev. *O Page 36 of 46 CY7C4122KV13/CY7C4142KV13 Switching Waveforms (continued) Figure 10. Waveforms for 8.0 Cycle Read Latency (Read to Write Timing Waveform) Figure 11. Waveforms for 8.0 Cycle Read Latency (Write to Read Timing Waveform) Document Number: 001-68255 Rev. *O Page 37 of 46 CY7C4122KV13/CY7C4142KV13 Switching Waveforms (continued) Figure 12. Configuration Write Timing Waveform Figure 13. Configuration Read Timing Waveform Note: DQA[x:8] and DQB data bus is a don’t care in Configuration Mode Document Number: 001-68255 Rev. *O Page 38 of 46 CY7C4122KV13/CY7C4142KV13 Switching Waveforms (continued) Figure 14. Configuration Write and Read Timing Waveform (a) Configuration Multiple Cycle - Write followed by Read Operation Note: DQA[x:8] and DQB data bus is a don’t care in Configuration Mode (b) Configuration Multiple Cycle - Back to Back Read Operation Note: DQA[x:8] and DQB data bus is a don’t care in Configuration Mode Document Number: 001-68255 Rev. *O Page 39 of 46 CY7C4122KV13/CY7C4142KV13 Switching Waveforms (continued) Figure 15. Loopback TIming Loopback Timing Document Number: 001-68255 Rev. *O Page 40 of 46 CY7C4122KV13/CY7C4142KV13 Switching Waveforms (continued) Figure 16. Reset TImings Document Number: 001-68255 Rev. *O Page 41 of 46 CY7C4122KV13/CY7C4142KV13 Ordering Information The following table Table 22 contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Table 22. Ordering Information Speed (MHz) 1066 Package Diagram Ordering Code CY7C4122KV13-106FCXC Package Type Operating Range 001-70319 361-ball FCBGA (21 × 21 × 2.515 mm) Pb-free Commercial 001-70319 361-ball FCBGA (21 × 21 × 2.515 mm) Pb-free Commercial CY7C4142KV13-106FCXC 933 CY7C4122KV13-933FCXC CY7C4142KV13-933FCXC CY7C4122KV13-933FCXI Industrial CY7C4142KV13-933FCXI Ordering Code Definitions CY 7 C 41x2 K V13 - XXX FC X X Temperature Range : X= C or I; C = Commercial or I = Industrial; Pb-free Package Type: 361-ball Flip Chip BGA Speed Grade: 106 = 1066 MHz or 933 = 933 MHz VDD = 1.3 V Die Revision: K = 65nm Part Identifier: 4122 or 4142 Technology Code: C = CMOS Marketing Code: 7 = SRAM Company ID: CY = Cypress Document Number: 001-68255 Rev. *O Page 42 of 46 CY7C4122KV13/CY7C4142KV13 Package Diagram Figure 17. 361-ball FCBGA (21 × 21 × 2.515 mm) FR0AA Package Outline, 001-70319 001-70319 *D Document Number: 001-68255 Rev. *O Page 43 of 46 CY7C4122KV13/CY7C4142KV13 Acronyms Document Conventions Table 23. Acronyms used in this document Acronym Description Units of Measure Table 24. Units of Measure DDR Double Data Rate RTR Random Transaction Rate °C degree Celsius EIA Electronic Industries Alliance MHz megahertz EMI Electromagnetic Interference µA microampere FCBGA Flip-Chip Ball Grid Array µs microsecond I/O Input/Output mA milliampere JEDEC Joint Electron Devices Engineering Council mm millimeter JTAG Joint Test Action Group ms millisecond LMBU Logical Multiple Bit Upset mV millivolt LSB Least Significant Bit ns nanosecond LSBU Logical Single Bit Upset ohm MSB Most Significant Bit % percent ODT On-Die Termination pF picofarad PLL Phase Locked Loop V volt QDR Quad Data Rate W watt SDR Single Data Rate SEL Single Event Latch-up SER Soft Error Rate SRAM Static Random Access Memory TAP Test Access Port TCK Test Clock TDI Test Data-In TDO Test Data-Out TMS Test Mode Select Document Number: 001-68255 Rev. *O Symbol Unit of Measure Page 44 of 46 CY7C4122KV13/CY7C4142KV13 Document History Page Document Title: CY7C4122KV13/CY7C4142KV13, 144-Mbit QDR™-IV XP SRAM Document Number: 001-68255 Rev. ECN Submission Date Orig. of Change *J 4283232 03/25/2014 PRIT Post to web. *K 4410859 06/17/2014 PRIT Updated AC Test Load and Waveform: Updated Figure 7 (Changed value of RQ resistor from 200 to 180 ). Description of Change Updated Switching Characteristics: Added tASH, tCSH, tISH parameters and their details. Updated Note 20 and 23. Completing Sunset Review. *L 4502995 09/15/2014 PRIT Updated Switching Characteristics: Updated Note 23. Updated Package Diagram: spec 001-70319 – Changed revision from *C to *D. *M 4573944 11/19/2014 PRIT Updated Functional Description: Added “For a complete list of related resources, click here.” at the end. *N 4710814 04/02/2015 PRIT Updated Operating Range: Replaced “Case Temperature (TC)” with “Ambient Temperature (TA)” in column heading. *O 4951439 10/07/2015 PRIT Added Industrial Temperature Range related information in all instances across the document. Updated Logic Block Diagram – CY7C4142KV13. Updated Switching Characteristics: Changed maximum value of tCK parameter from 1.875 ns to 3.333 ns for 1066 MHz speed bin. Changed maximum value of tCK parameter from 2.143 ns to 3.333 ns for 933 MHz speed bin. Updated Ordering Information: Updated part numbers. Removed Errata. Updated to new template. Added Errata. Document Number: 001-68255 Rev. *O Page 45 of 46 CY7C4122KV13/CY7C4142KV13 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Automotive Clocks & Buffers Interface Lighting & Power Control Memory PSoC cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/memory cypress.com/go/psoc Touch Sensing cypress.com/go/touch USB Controllers cypress.com/go/USB Wireless/RF psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP Cypress Developer Community Community | Forums | Blogs | Video | Training Technical Support cypress.com/go/support cypress.com/go/wireless © Cypress Semiconductor Corporation, 2011-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-68255 Rev. *O Revised October 7, 2015 All products and company names mentioned in this document may be the trademarks of their respective holders. Page 46 of 46