LX5552 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SPDT Switch ® TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION +17dBm linear output power, with low total EVM (<3%) for 64QAM/ 54Mbps OFDM. Both gain and power are readily measured at antenna port with the insertion loss of the Tx switch included. The Rx path of LX5552 features small-signal gain of 12.5dB, low noise figure of 2dB, and high input thirdorder intercept point (IIP3) of +5dBm with the insertion loss of the the Rx switch loss included. The LNA consumes about 10mA current with 3.3V supply voltage. LX5552 is available in a 16-pin, 3x3mm micro-lead package (MLPQ16L). With its high level of functional integration, best-class performance, compact footprint and low profile, LX5552 offers an ideal front-end solution for the ever demanding design requirements of today’s WLAN systems, including 802.11b/g and the latest 11n MIMO applications. 2.4-2.5GHz 802.11b/g/n FrontEnd Solution in a Single MLP Package All RF I/O Matched to 50 Ω Single-Polarity 3.3V Supply Small Footprint: 3x3mm2 Low Profile: 0.55mm RoHS Compliant & Pb-Free TX Features : Power Gain ~ 26dB* Pout ~ +17dBm* for 3% EVM Current ~140mA at +17dBm Pout ~ +21dBm* for 11b 1Mbps DSSS Mask Compliance Quiescent Current ~ 80mA WWW . Microsemi .C OM LX5552 is a high-integration, highperformance WLAN front-end module (FEM) for 802.11b/g/n and other applications in the 2.4-2.5GHz frequency range. LX5552 integrates a fully matched InGaP/GaAs Heterojunction Bipolar Transistor (HBT) power amplifier, a low noise amplifier based on InGaAs Enhancement mode pseudo-morphic high electron mobility transistor (E-pHEMT) technology, and a low-cost Depletion mode pHEMT (D-pHEMT) single pole double throw (SPDT) antenna switch in a single package. The Tx path of LX5552 features a two-stage monolithic microwave integrated circuit (MMIC) power amplifier with active bias circuitry, on-chip output power detector, and 50Ω input/output matching inside the package. With 3.3V supply voltage and 80mA bias current, the Tx path provides about 26dB power gain and RX Features : Gain ~ 12.5dB* Noise Figure ~ 2dB* IIP3 ~ +5dBm* * Including SPDT switch loss IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPLICATIONS IEEE 802.11b/g IEEE 802.11n MIMO BLOCK DIAGRAM PA Vc2 Out SwIn Vref Vc1 TxIn IMN* PA OMN* LX5552 Det *IMN: Input Matching Network *OMN: Output Matching Network Copyright © 2009 Rev. 1.0, 2009-06-02 Antenna Port LNA RxOut Vdd CtrlTx CtrlRx Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5552 ® TM 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SPDT Switch P RODUCTION D ATA S HEET WWW . Microsemi .C OM PRODUCT HIGHLIGHT MSC 5552 818A 840A PACKAGE ORDER INFO Plastic MLPQ 16 pin 3x3mm RoHS Compliant /Pb-Free LU LX5552LU Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5552LU-TR) ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT DC Supply Voltage, RF off (PA).......................................................................5V (LNA) ...................................................................4V (Switch) ................................................................5V Collector Current (PA)................................................................................500mA Drain Current (LNA) ....................................................................................40mA Total Power Dissipation....................................................................................2W RF Input Power (With 50 Ohm Load at Output) ......................................+10dBm Maximum Junction Temperature (Tj max) ................................................ +150°C Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-65°C to +150°C RoHS/Pb-Free Peak Package Temp. for Solder Reflow (40 seconds maximum exposure)................................................... 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. TxIn NC Vc1 NC 16 Vcc 15 14 1 13 12 Vc2 Vref 2 11 PAOut Det 3 10 SwIn RxOut 4 GND 5 6 7 9 NC 8 Vdd CtrlRx Ant CtrlTx LU PACKAGE (“See-Through” View from Top) RoHS/Pb-Free 100% Matte Tin Lead finish PACKAGE DATA THERMAL DATA LU Plastic MLPQ 16-Pin THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA 9.5 C/W 50.0 C/W Junction Temperature Calculation: TJ = TA + (PD x θJA). The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. Copyright © 2009 Rev. 1.0, 2009-06-02 Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 TM ® Thank you for your interest in Microsemi® Analog Mixed Signal products. The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link http://www.microsemi.com/contact/contactfind.asp or Contact us directly by sending an email to: [email protected] Be sure to specify the data sheet you are requesting and include your company name and contact information and or vcard. We look forward to hearing from you. Copyright Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 WWW . Microsemi .C OM INFORMATION