PD - 91581B IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Surface Mountable VCES = 600V VCE(on) typ. = 1.28V G @VGE = 15V, IC = 41A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Surface Mountable TO-247 Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max Reflow Temperature 600 70 41 140 140 ± 20 20 200 78 -55 to + 150 V A V mJ W °C 225 Thermal Resistance Parameter RθJC RθCS RθJA 1 Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Typ. Max. Units ––– 0.24 ––– 0.64 ––– 40 °C/W www.irf.com 05/14/02 IRG4PC50S-P Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — Temperature Coeff. of Breakdown Voltage — 0.75 — 1.28 Collector-to-Emitter Saturation Voltage — 1.62 — 1.28 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -9.3 Forward Transconductance U 17 34 — — Zero Gate Voltage Collector Current — — — — Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA 1.36 IC = 41A VGE = 15V — IC = 80A See Fig.2, 5 V — IC = 41A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 41A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 180 24 61 33 30 650 400 0.72 8.27 8.99 31 31 1080 620 15 13 4100 250 48 Max. Units Conditions 280 IC = 41A 37 nC VCC = 400V See Fig. 8 92 VGE = 15V — — TJ = 25°C ns 980 IC = 41A, VCC = 480V 600 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 14 13 — TJ = 150°C, — IC = 41A, VCC = 480V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 11, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC50S-P 100 F o r b o th : T ria n g u la r wa v e : D uty cy c le: 50% T J = 125° C T s ink = 90°C Ga te drive as s pec ified 80 I Load Current ( A ) P o w e r D i ss i p a tio n = 4 0 W C la m p v o lta g e : 8 0 % o f ra te d 60 S q u are wa ve: 6 0 % o f ra te d vo lt a g e 40 I 20 Id e a l di o de s A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 1000 100 100 10 TJ = 150 o C TJ = 25 o C V = 15V 20µs PULSE WIDTH GE 1 0.1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 10 TJ = 150 o C 10 TJ = 25 oC V = 50V 5µs PULSE WIDTH CC 1 5 6 7 8 9 10 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50S-P L IM IT E D B Y P A C K A G E 2.2 V G E = 15 V 60 40 20 0 25 50 75 100 125 V = 15V 80 us PULSE WIDTH GE VCE , Collector-to-Emitter Voltage(V) M axim um D C C ollector C urrent (A) 80 150 I C = 82 A 2.0 1.8 1.6 1.4 I C = 41 A 1.2 I C =20.5 A 1.0 0.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) T C , C ase Tem perature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 0.00001 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50S-P C, Capacitance (pF) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 6000 Cies 4000 C oes 2000 Cres 20 VGE , Gate-to-Emitter Voltage (V) 8000 0 1 10 12 8 4 0 100 0 Total Switching Losses (mJ) Total Switching Losses (mJ) 100 9.5 9.0 8.5 20 30 40 Ω) RRGG , Gate Gate Resistance Resistance( (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 80 120 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C I C = 41A 10 40 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 VCC = 400V I C = 41A 16 VCE , Collector-to-Emitter Voltage (V) 10.0 50 5.0Ω RG = Ohm VGE = 15V VCC = 480V IC = 82 A IC = 41 A 10 IC = 20.5 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50S-P 30 RG TJ VCC VGE 1000 5.0Ω = Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 40 VGE = 20V T J = 125 oC 100 20 10 10 SAFE OPERATING AREA 1 0 0 20 40 60 80 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 100 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PC50S-P L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X I C@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4PC50S-P TO-247AC Package Outline Dimensions are shown in millimeters (inches) -D- 3 .65 (.1 43 ) 3 .55 (.1 40 ) 15 .90 (.6 26 ) 15 .30 (.6 02 ) -B - 0.25 (.0 1 0) M 5 .3 0 (.2 09 ) 4 .7 0 (.1 85 ) 2 .5 0 (.08 9) 1 .5 0 (.05 9) 4 D B M -A 5 .50 (. 217 ) 2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1 2 NO TES : 5.5 0 (.2 17) 4.5 0 (.1 77) 2X 1 D IME N SION ING & TO LE R AN CING P E R A NS I Y14.5M, 1982. 2 C ON TR OLLIN G D IME N SIO N : IN CH . 3 C ON F OR MS TO JED E C OU TLIN E T O-247-A C . 3 -C- 14 .8 0 (.5 83 ) 14 .2 0 (.5 59 ) 2 .40 (. 094 ) 2 .00 (. 079 ) 2X 5.45 (.21 5) 2X 4.3 0 (.1 70) 3.7 0 (.1 45) 0 .80 (.03 1) 3 X 0 .40 (.01 6) 1 .40 (.0 56 ) 3X 1 .00 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .40 (.13 3) 3 .00 (.11 8) LE AD A S SIG N MEN TS 2 .60 (.1 0 2) 2 .20 (.0 8 7) C A S 1 2 3 4 - GA TE DR AIN SO UR C E DR AIN TO-247AC Part Marking Information E X A M P L E : T H IS IS A N IR F P E 3 0 W IT H A S S E M B L Y LOT C ODE 3A1Q A IN T E R N A T IO N A L R E C T IF I E R PA R T NU M B E R IR F P E 30 LOGO 3A1Q A S SE M B L Y LOT CODE 9302 D ATE CO DE (Y Y W W ) Y Y = YE A R W W W EEK Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/