DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BA423AL AM band-switching diode Product specification Supersedes data of April 1992 1996 Mar 13 Philips Semiconductors Product specification AM band-switching diode BA423AL FEATURES DESCRIPTION • Continuous reverse voltage: max. 20 V Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF k handbook, 4 columns a • Low diode forward resistance: max. 1.2 Ω. MAM061 APPLICATION Fig.1 Simplified outline (SOD80C) and symbol. • Band switching in AM radio receivers. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 20 V IF continuous forward current − 50 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage IF = 50 mA; see Fig.2 IR reverse current see Fig.3 MAX. 0.9 VR = 20V VR = 20 V; Tj = 125 °C UNIT V 100 nA 5 µA Cd diode capacitance f = 1 MHz; VR = 3 V; see Fig.4 2.5 pF rD diode forward resistance IF = 10 mA; f = 1 MHz; see Fig.5 1.2 Ω THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on a FR4 printed-circuit board. 1996 Mar 13 2 VALUE UNIT 300 K/W 375 K/W Philips Semiconductors Product specification AM band-switching diode BA423AL GRAPHICAL DATA MBG292 100 IR (nA) (1) (2) (3) IF (mA) MBG291 4 10halfpage handbook, handbook, halfpage 10 3 10 2 50 10 0 0 0.5 1 V F (V) 1 1.5 (1) Tj = 125 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 50 0 100 Tj ( o C) 150 VR = 20 V. Solid line: maximum values. Dotted line: typical values. Forward current as a function of forward voltage. Fig.3 MBG297 4 Reverse current as a function of junction temperature. MBG298 4 handbook, halfpage handbook, halfpage Cd (pF) rD (Ω) 3 3 2 2 1 1 0 0 0 4 8 12 V (V) 16 R 0 4 f = 1 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C. Fig.4 Fig.5 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 13 3 8 12 I (mA) 16 F Diode forward resistance as a function of forward current; typical values. Philips Semiconductors Product specification AM band-switching diode BA423AL PACKAGE OUTLINE handbook, full pagewidth 1.60 O 1.45 0.3 0.3 3.7 3.3 MBA390 - 2 Dimensions in mm. The cathode is indicated by a red band. Fig.6 SOD80C. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 13 4