DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTA114TK PNP resistor-equipped transistor Product specification Supersedes data of 1997 Sep 05 File under Discrete Semiconductors, SC04 1998 May 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TK FEATURES • Built-in bias resistor R1 (typ. 10 kΩ) • Simplification of circuit design 3 handbook, halfpage • Reduces number of components and board space. 3 R1 1 APPLICATIONS 2 • Especially suitable for space reduction in interface and driver circuits 1 2 Top view MAM289 • Inverter circuit configurations without use of external resistor. Fig.1 Simplified outline (SC-59) and symbol. DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC114TK. MARKING 1 PINNING 2 PIN DESCRIPTION 1 base/input 2 emitter/ground (+) 3 collector/output TYPE NUMBER 3 MARKING CODE PDTA114TK 23 MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − −50 V output current (DC) − − −100 mA peak collector current − − −100 mA Tamb ≤ 25 °C − − 250 mW IC = −1 mA; VCE = −5 V 200 − − 7 10 13 VCEO collector-emitter voltage IO ICM Ptot total power dissipation hFE DC current gain R1 input resistor 1998 May 15 open base 2 kΩ Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TK LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −5 V IO output current (DC) − −100 mA ICM peak collector current − −100 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current ICEO collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −50 V − − −100 nA IB = 0; VCE = −30 V − − −1 µA IB = 0; VCE = −30 V; Tj = 150 °C − − −50 µA nA IEBO emitter cut-off current IC = 0; VEB = −4 V − − −100 hFE DC current gain IC = −1 mA; VCE = −5 V 200 − − VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −150 mV R1 input resistor 7 10 13 kΩ Cc collector capacitance − − 3 pF 1998 May 15 IE = ie = 0; VCB = −10 V; f = 1 MHz 3 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TK MBK784 MBK783 −1 600 handbook, halfpage handbook, halfpage hFE VCEsat (1) (V) 400 (1) −10−1 (2) 200 (2) (3) (3) 0 −10−1 −1 −10 IC (mA) −10−2 −10−1 −102 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. 1998 May 15 4 −1 −10 IC (mA) −102 Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TK PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT346 E D A B X HE v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e e1 HE Lp Q v w mm 1.3 1.0 0.1 0.013 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 1.9 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 OUTLINE VERSION SOT346 1998 May 15 REFERENCES IEC JEDEC EIAJ TO-236 SC-59 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TK DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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