DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC114TS NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TS FEATURES • Built-in bias resistor R1 (typ. 10 kΩ) • Simplification of circuit design • Reduces number of components and board space. handbook, halfpage 2 1 R1 1 2 3 APPLICATIONS 3 • Especially suitable for space reduction in interface and driver circuits MAM361 • Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (TO-92; SOT54) and symbol. DESCRIPTION NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA114TS. 1 2 PINNING 3 MGL136 PIN DESCRIPTION 1 base/input 2 collector/output 3 emitter/ground Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − − 50 V − − 100 mA VCEO collector-emitter voltage IO output current (DC) ICM peak collector current − − 100 mA Ptot total power dissipation Tamb ≤ 25 °C − − 500 mW hFE DC current gain IC = 1 mA; VCE = 5 V 200 − − R1 input resistor 7 10 13 1998 May 18 open base MIN. 2 kΩ Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 250 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current ICEO collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 50 V − − 100 nA IB = 0; VCE = 30 V − − 1 µA IB = 0; VCE = 30 V; Tj = 150 °C − − 50 µA − − 100 nA IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain IC = 1 mA; VCE = 5 V 200 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 mV R1 input resistor 7 10 13 kΩ Cc collector capacitance − − 2.5 pF 1998 May 18 IE = ie = 0; VCB = 10 V; f = 1 MHz 3 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TS MGM902 MGM901 10−1 handbook, halfpage 600 handbook, halfpage (1) (2) (3) (1) hFE VCEsat (V) 400 (2) (3) 200 0 10−1 1 10 IC (mA) 10−2 10−1 102 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. 1998 May 18 4 1 10 IC (mA) 102 Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TS PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1998 May 18 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TS DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 May 18 6 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TS NOTES 1998 May 18 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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