BAV99 series High-speed switching diodes Rev. 07 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features and benefits High switching speed: trr ≤ 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd ≤ 1.5 pF Reverse voltage: VR ≤ 100 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit VR = 80 V - - 0.5 μA - - 100 V - - 4 ns Per diode IR reverse current VR reverse voltage trr reverse recovery time [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAV99 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol BAV99; BAV99W 1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) 3 3 1 2 006aaa144 1 2 006aaa763 BAV99S 1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 3), anode (diode 4) 4 anode (diode 3) 5 cathode (diode 4) 6 cathode (diode 1), anode (diode 2) 6 5 4 1 2 3 6 5 1 2 4 3 006aab101 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAV99 - plastic surface-mounted package; 3 leads SOT23 BAV99S SC-88 plastic surface-mounted package; 6 leads SOT363 BAV99W SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 5. Marking codes Type number Marking code[1] BAV99 A7* BAV99S K1* BAV99W A7* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BAV99_SER_7 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V IF forward current [1] - 215 mA [2] - 125 mA BAV99S [1] - 200 mA BAV99W [1] - 150 mA [2] - 130 mA - 500 mA BAV99 IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave [3] tp = 1 μs - 4 A tp = 1 ms - 1 A - 0.5 A - 250 mW - 250 mW - 200 mW tp = 1 s [1][4] total power dissipation Ptot BAV99 Tamb ≤ 25 °C BAV99S Tamb ≤ 85 °C BAV99W Tamb ≤ 25 °C [5] Per device BAV99_SER_7 Product data sheet Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Single diode loaded. [2] Double diode loaded. [3] Tj = 25 °C prior to surge. [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [5] Soldering points at pins 2, 3, 5 and 6. All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 6. Thermal characteristics Table 7. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter Conditions Min Typ Max Unit BAV99 - - 500 K/W BAV99W - - 625 K/W - - 360 K/W - - 260 K/W - - 300 K/W thermal resistance from junction to ambient in free air [1][2] thermal resistance from junction to solder point BAV99 [3] BAV99S BAV99W [1] Single diode loaded. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Soldering points at pins 2, 3, 5 and 6. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V IF = 150 mA - - 1.25 V VR = 25 V - - 30 nA VR = 80 V - - 0.5 μA VR = 25 V; Tj = 150 °C - - 30 μA VR = 80 V; Tj = 150 °C - - 50 μA pF Per diode VF IR Cd BAV99_SER_7 Product data sheet reverse current diode capacitance f = 1 MHz; VR = 0 V trr reverse recovery time [1] VFR forward recovery voltage [2] - - 1.5 - - 4 ns - - 1.75 V [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [2] When switched from IF = 10 mA; tr = 20 ns. All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 006aab132 103 IF (mA) 006aab133 102 IR (μA) 10 (1) 1 (2) 102 10−1 10 (3) 10−2 (1) (2) (3) 10−3 (4) 1 10−4 (4) 10−5 10−1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1.4 VF (V) 20 40 (1) Tamb = 150 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C (4) Tamb = −40 °C (4) Tamb = −40 °C Forward current as a function of forward voltage; typical values mbg446 0.8 Cd (pF) 80 100 VR (V) (1) Tamb = 150 °C Fig 1. 60 Fig 2. Reverse current as a function of reverse voltage; typical values mbg704 102 IFSM (A) 0.6 10 0.4 1 0.2 10−1 0 0 4 8 12 VR (V) 1 16 10 102 103 104 tp (μs) f = 1 MHz; Tamb = 25 °C Based on square wave currents. Tj = 25 °C; prior to surge Fig 3. Diode capacitance as a function of reverse voltage; typical values BAV99_SER_7 Product data sheet Fig 4. Non-repetitive peak forward current as a function of pulse duration; maximum values All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAV99_SER_7 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 9. Package outline 3.0 2.8 2.2 1.8 1.1 0.9 6 3 1.1 0.8 5 4 2 3 0.45 0.15 0.45 0.15 2.2 1.35 2.0 1.15 2.5 1.4 2.1 1.2 1 2 1 0.48 0.38 1.9 0.15 0.09 0.25 0.10 0.3 0.2 0.65 1.3 Dimensions in mm Fig 7. pin 1 index Dimensions in mm 04-11-04 Package outline BAV99 (SOT23/TO-236AB) Fig 8. 06-03-16 Package outline BAV99S (SOT363/SC-88) 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm Fig 9. 04-11-04 Package outline BAV99W (SOT323/SC-70) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 BAV99 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 BAV99S SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 -115 -135 BAV99W [1] BAV99_SER_7 Product data sheet SOT323 4 mm pitch, 8 mm tape and reel For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 10. Reflow soldering footprint BAV99 (SOT23/TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 11. Wave soldering footprint BAV99 (SOT23/TO-236AB) BAV99_SER_7 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 12. Reflow soldering footprint BAV99S (SOT363/SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 13. Wave soldering footprint BAV99S (SOT363/SC-88) BAV99_SER_7 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 1 occupied area 0.5 (3×) Dimensions in mm 0.55 (3×) sot323_fr Fig 14. Reflow soldering footprint BAV99W (SOT323/SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 15. Wave soldering footprint BAV99W (SOT323/SC-70) BAV99_SER_7 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAV99_SER_7 20100414 Product data sheet - BAV99_SER_6 Modifications: • • • Section 1.2 “Features and benefits”: updated Section 8.1 “Quality information”: added Section 13 “Legal information”: updated BAV99_SER_6 20100310 Product data sheet - BAV99_SER_5 BAV99_SER_5 20080820 Product data sheet - BAV99_4 BAV99S_3 BAV99W_4 BAV99_4 20011015 Product specification - BAV99_3 BAV99S_3 20010514 Product specification - BAV99S_N_2 BAV99W_4 19990511 Product specification - BAV99W_3 BAV99_SER_7 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BAV99_SER_7 Product data sheet malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAV99_SER_7 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 07 — 14 April 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 April 2010 Document identifier: BAV99_SER_7