BAS16VV; BAS16VY Triple high-speed switching diodes Rev. 03 — 20 April 2007 Product data sheet 1. Product profile 1.1 General description Triple high-speed switching diodes, encapsulated in very small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration NXP JEITA BAS16VV SOT666 - BAS16VY SOT363 SC-88 triple isolated 1.2 Features n High switching speed: trr ≤ 4 ns n Low leakage current n Reverse voltage: VR ≤ 100 V n Very small SMD plastic packages 1.3 Applications n High-speed switching n General-purpose switching n Voltage clamping n Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit - - 200 mA - - 100 V - - 4 ns Per diode IF forward current VR reverse voltage trr [1] reverse recovery time [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 anode (diode 1) 2 anode (diode 2) 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 6 cathode (diode 1) 6 5 4 1 2 3 Symbol 6 5 1 2 4 3 sym043 001aab555 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAS16VV - plastic surface-mounted package; 6 leads SOT666 BAS16VY SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 5. Marking codes Type number Marking code[1] BAS16VV 53 BAS16VY 16* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BAS16VV_BAS16VY_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 2 of 12 BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V IF forward current - 200 mA IFRM repetitive peak forward current - 450 mA tp = 1 µs - 4.5 A tp = 1 ms - 1 A tp = 1 s - 0.5 A IFSM non-repetitive peak forward current [1] square wave total power dissipation Ptot BAS16VV Tamb ≤ 25 °C [2] - 180 mW BAS16VY Tsp = 85 °C [3] - 250 mW Per device Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Tj = 25 °C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Soldering points at pins 4, 5 and 6. 6. Thermal characteristics Table 7. Symbol Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [2] - - 700 K/W [3] - - 410 K/W [4] - - 260 K/W Per diode Rth(j-a) BAS16VV Rth(j-sp) thermal resistance from junction to solder point BAS16VY [1] Reflow soldering is the only recommended soldering method. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Soldering points at pins 4, 5 and 6. BAS16VV_BAS16VY_3 Product data sheet [1] © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 3 of 12 BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V Per diode VF IR reverse current Cd diode capacitance trr reverse recovery time forward recovery voltage VFR [1] forward voltage IF = 150 mA - - 1.25 V VR = 25 V - - 30 nA VR = 75 V - - 1 µA VR = 25 V; Tj = 150 °C - - 30 µA VR = 75 V; Tj = 150 °C - - 50 µA VR = 0 V; f = 1 MHz - - 1.5 pF [2] - - 4 ns [3] - - 1.75 V [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr = 20 ns. BAS16VV_BAS16VY_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 4 of 12 BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes mbg382 300 IF (mA) (1) (2) mgw103 10 I FSM (A) (3) 200 1 100 0 0 1 VF (V) 2 10−1 1 10 102 103 104 t p (µs) (1) Tamb = 150 °C; typical values Based on square wave currents. (2) Tamb = 25 °C; typical values Tj = 25 °C; prior to surge (3) Tamb = 25 °C; maximum values Fig 1. Forward current as a function of forward voltage mga884 105 Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mbg446 0.8 Cd (pF) IR (nA) (1) 104 0.6 (2) 103 0.4 (3) 102 10 0.2 0 0 100 Tj (°C) 200 0 4 8 12 VR (V) 16 f = 1 MHz; Tamb = 25 °C (1) VR = 75 V; maximum values (2) VR = 75 V; typical values (3) VR = 25 V; typical values Fig 3. Reverse current as a function of junction temperature Fig 4. Diode capacitance as a function of reverse voltage; typical values BAS16VV_BAS16VY_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 5 of 12 BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms BAS16VV_BAS16VY_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 6 of 12 BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes 9. Package outline 1.7 1.5 6 2.2 1.8 0.6 0.5 5 6 4 1.1 0.8 5 4 2 3 0.45 0.15 0.3 0.1 1.7 1.5 2.2 1.35 2.0 1.15 1.3 1.1 pin 1 index 1 2 1 3 0.18 0.08 0.27 0.17 0.5 pin 1 index 1.3 1 Dimensions in mm Dimensions in mm 04-11-08 Fig 7. Package outline SOT666 0.25 0.10 0.3 0.2 0.65 06-03-16 Fig 8. Package outline SOT363 (SC-88) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity BAS16VV SOT666 2 mm pitch, 8 mm tape and reel - - -315 - 3000 4000 8000 10000 4 mm pitch, 8 mm tape and reel BAS16VY SOT363 - -115 - - 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping BAS16VV_BAS16VY_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 7 of 12 BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes 11. Soldering 2.75 2.45 2.10 1.60 0.15 (4×) 0.40 (6×) 2.00 1.70 1.00 0.55 (2×) 0.30 (2×) 0.375 (4×) 1.20 2.20 2.50 solder lands placement area solder resist occupied area 0.075 Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 9. Reflow soldering footprint SOT666 BAS16VV_BAS16VY_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 8 of 12 BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes 2.65 0.60 (2×) 0.40 0.90 2.10 (2×) 2.35 solder lands solder paste 0.50 (4×) solder resist occupied area 0.50 (4×) Dimensions in mm 1.20 2.40 sot363 Fig 10. Reflow soldering footprint SOT363 (SC-88) 5.25 0.30 1.00 4.00 4.50 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering Dimensions in mm sot363 Fig 11. Wave soldering footprint SOT363 (SC-88) BAS16VV_BAS16VY_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 9 of 12 BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS16VV_BAS16VY_3 20070420 Product data sheet - BAS16VV_BAS16VY_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • Legal texts have been adapted to the new company name where appropriate. • • • • • • • • • • • Table 7 “Thermal characteristics”: Table note 2, 3 and 4 amended Table 2 “Quick reference data”: indication per diode added Table 2 “Quick reference data”: Table note 1 for trr added Table 5 “Marking codes”: enhanced table note section Table 6 “Limiting values”: Table note 3 amended Table 7 “Thermal characteristics”: indication per diode added Table 7 “Thermal characteristics”: Rth(j-s) thermal resistance from junction to soldering point redefined to Rth(j-sp) thermal resistance from junction to solder point Table 8 “Characteristics”: Table note 1 for VF added Figure 2: figure title amended Figure 4: Tj junction temperature redefined to Tamb ambient temperature Figure 5: figure title and figure note amended Figure 6: figure note amended Figure 7 and 8: superseded by minimized package outline drawings Table 9 “Packing methods”: packing method for SOT666 added Table 9 “Packing methods”: enhanced table note section Section 11 “Soldering”: added Section 13 “Legal information”: updated BAS16VV_BAS16VY_2 20040910 Product data sheet - BAS16VY_1 BAS16VY_1 20030408 Product specification - - BAS16VV_BAS16VY_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 10 of 12 BAS16VV; BAS16VY NXP Semiconductors Triple high-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BAS16VV_BAS16VY_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 20 April 2007 11 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 April 2007 Document identifier: BAS16VV_BAS16VY_3