PHILIPS BAS16VV

BAS16VV; BAS16VY
Triple high-speed switching diodes
Rev. 03 — 20 April 2007
Product data sheet
1. Product profile
1.1 General description
Triple high-speed switching diodes, encapsulated in very small Surface-Mounted Device
(SMD) plastic packages.
Table 1.
Product overview
Type number
Package
Configuration
NXP
JEITA
BAS16VV
SOT666
-
BAS16VY
SOT363
SC-88
triple isolated
1.2 Features
n High switching speed: trr ≤ 4 ns
n Low leakage current
n Reverse voltage: VR ≤ 100 V
n Very small SMD plastic packages
1.3 Applications
n High-speed switching
n General-purpose switching
n Voltage clamping
n Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
-
200
mA
-
-
100
V
-
-
4
ns
Per diode
IF
forward current
VR
reverse voltage
trr
[1]
reverse recovery time
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
1
anode (diode 1)
2
anode (diode 2)
3
anode (diode 3)
4
cathode (diode 3)
5
cathode (diode 2)
6
cathode (diode 1)
6
5
4
1
2
3
Symbol
6
5
1
2
4
3
sym043
001aab555
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
BAS16VV
-
plastic surface-mounted package; 6 leads
SOT666
BAS16VY
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
BAS16VV
53
BAS16VY
16*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BAS16VV_BAS16VY_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
2 of 12
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VRRM
repetitive peak reverse voltage
-
100
V
VR
reverse voltage
-
100
V
IF
forward current
-
200
mA
IFRM
repetitive peak forward current
-
450
mA
tp = 1 µs
-
4.5
A
tp = 1 ms
-
1
A
tp = 1 s
-
0.5
A
IFSM
non-repetitive peak forward
current
[1]
square wave
total power dissipation
Ptot
BAS16VV
Tamb ≤ 25 °C
[2]
-
180
mW
BAS16VY
Tsp = 85 °C
[3]
-
250
mW
Per device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Tj = 25 °C prior to surge.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3]
Soldering points at pins 4, 5 and 6.
6. Thermal characteristics
Table 7.
Symbol
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
[2]
-
-
700
K/W
[3]
-
-
410
K/W
[4]
-
-
260
K/W
Per diode
Rth(j-a)
BAS16VV
Rth(j-sp)
thermal resistance from
junction to solder point
BAS16VY
[1]
Reflow soldering is the only recommended soldering method.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4]
Soldering points at pins 4, 5 and 6.
BAS16VV_BAS16VY_3
Product data sheet
[1]
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
3 of 12
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
-
-
1
V
Per diode
VF
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
forward recovery voltage
VFR
[1]
forward voltage
IF = 150 mA
-
-
1.25
V
VR = 25 V
-
-
30
nA
VR = 75 V
-
-
1
µA
VR = 25 V; Tj = 150 °C
-
-
30
µA
VR = 75 V; Tj = 150 °C
-
-
50
µA
VR = 0 V; f = 1 MHz
-
-
1.5
pF
[2]
-
-
4
ns
[3]
-
-
1.75
V
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[3]
When switched from IF = 10 mA; tr = 20 ns.
BAS16VV_BAS16VY_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
4 of 12
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
mbg382
300
IF
(mA)
(1)
(2)
mgw103
10
I FSM
(A)
(3)
200
1
100
0
0
1
VF (V)
2
10−1
1
10
102
103
104
t p (µs)
(1) Tamb = 150 °C; typical values
Based on square wave currents.
(2) Tamb = 25 °C; typical values
Tj = 25 °C; prior to surge
(3) Tamb = 25 °C; maximum values
Fig 1. Forward current as a function of forward
voltage
mga884
105
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg446
0.8
Cd
(pF)
IR
(nA)
(1)
104
0.6
(2)
103
0.4
(3)
102
10
0.2
0
0
100
Tj (°C)
200
0
4
8
12
VR (V)
16
f = 1 MHz; Tamb = 25 °C
(1) VR = 75 V; maximum values
(2) VR = 75 V; typical values
(3) VR = 25 V; typical values
Fig 3. Reverse current as a function of junction
temperature
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS16VV_BAS16VY_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
5 of 12
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
8. Test information
tr
tp
t
D.U.T.
10 %
+ IF
IF
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
V = VR + IF × RS
trr
t
Ri = 50 Ω
(1)
90 %
VR
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
1 kΩ
RS = 50 Ω
D.U.T.
450 Ω
I
V
90 %
OSCILLOSCOPE
VFR
Ri = 50 Ω
10 %
t
tr
t
tp
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 6. Forward recovery voltage test circuit and waveforms
BAS16VV_BAS16VY_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
6 of 12
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
9. Package outline
1.7
1.5
6
2.2
1.8
0.6
0.5
5
6
4
1.1
0.8
5
4
2
3
0.45
0.15
0.3
0.1
1.7
1.5
2.2 1.35
2.0 1.15
1.3
1.1
pin 1 index
1
2
1
3
0.18
0.08
0.27
0.17
0.5
pin 1
index
1.3
1
Dimensions in mm
Dimensions in mm
04-11-08
Fig 7. Package outline SOT666
0.25
0.10
0.3
0.2
0.65
06-03-16
Fig 8. Package outline SOT363 (SC-88)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
BAS16VV
SOT666
2 mm pitch, 8 mm tape and reel
-
-
-315
-
3000 4000 8000 10000
4 mm pitch, 8 mm tape and reel
BAS16VY
SOT363
-
-115
-
-
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-
-
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
BAS16VV_BAS16VY_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
7 of 12
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
11. Soldering
2.75
2.45
2.10
1.60
0.15
(4×)
0.40
(6×)
2.00 1.70 1.00
0.55
(2×)
0.30 (2×)
0.375
(4×)
1.20
2.20
2.50
solder lands
placement area
solder resist
occupied area
0.075
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 9. Reflow soldering footprint SOT666
BAS16VV_BAS16VY_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
8 of 12
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
2.65
0.60
(2×)
0.40 0.90 2.10
(2×)
2.35
solder lands
solder paste
0.50
(4×)
solder resist
occupied area
0.50
(4×)
Dimensions in mm
1.20
2.40
sot363
Fig 10. Reflow soldering footprint SOT363 (SC-88)
5.25
0.30 1.00 4.00
4.50
solder lands
solder resist
occupied area
1.15
3.75
transport direction during soldering
Dimensions in mm
sot363
Fig 11. Wave soldering footprint SOT363 (SC-88)
BAS16VV_BAS16VY_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
9 of 12
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAS16VV_BAS16VY_3
20070420
Product data sheet
-
BAS16VV_BAS16VY_2
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
•
•
•
•
•
•
•
•
•
•
•
Table 7 “Thermal characteristics”: Table note 2, 3 and 4 amended
Table 2 “Quick reference data”: indication per diode added
Table 2 “Quick reference data”: Table note 1 for trr added
Table 5 “Marking codes”: enhanced table note section
Table 6 “Limiting values”: Table note 3 amended
Table 7 “Thermal characteristics”: indication per diode added
Table 7 “Thermal characteristics”: Rth(j-s) thermal resistance from junction to soldering point
redefined to Rth(j-sp) thermal resistance from junction to solder point
Table 8 “Characteristics”: Table note 1 for VF added
Figure 2: figure title amended
Figure 4: Tj junction temperature redefined to Tamb ambient temperature
Figure 5: figure title and figure note amended
Figure 6: figure note amended
Figure 7 and 8: superseded by minimized package outline drawings
Table 9 “Packing methods”: packing method for SOT666 added
Table 9 “Packing methods”: enhanced table note section
Section 11 “Soldering”: added
Section 13 “Legal information”: updated
BAS16VV_BAS16VY_2
20040910
Product data sheet
-
BAS16VY_1
BAS16VY_1
20030408
Product specification
-
-
BAS16VV_BAS16VY_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
10 of 12
BAS16VV; BAS16VY
NXP Semiconductors
Triple high-speed switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BAS16VV_BAS16VY_3
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 03 — 20 April 2007
11 of 12
NXP Semiconductors
BAS16VV; BAS16VY
Triple high-speed switching diodes
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 April 2007
Document identifier: BAS16VV_BAS16VY_3