BAV99 series High-speed switching diodes Rev. 8 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features and benefits High switching speed: trr ≤ 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd ≤ 1.5 pF Reverse voltage: VR ≤ 100 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit VR = 80 V - - 0.5 μA - - 100 V - - 4 ns Per diode IR reverse current VR reverse voltage trr reverse recovery time [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAV99 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol BAV99; BAV99W 1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) 3 3 1 2 006aaa144 1 2 006aaa763 BAV99S 1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 3), anode (diode 4) 4 anode (diode 3) 5 cathode (diode 4) 6 cathode (diode 1), anode (diode 2) 6 5 4 1 2 3 6 5 1 2 4 3 006aab101 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAV99 - plastic surface-mounted package; 3 leads SOT23 BAV99S SC-88 plastic surface-mounted package; 6 leads SOT363 BAV99W SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 5. Marking code[1] BAV99 A7* BAV99S K1* BAV99W A7* [1] BAV99_SER Product data sheet Marking codes Type number * = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V IF forward current [1] - 215 mA [2] - 125 mA BAV99S [1] - 200 mA BAV99W [1] - 150 mA [2] - 130 mA - 500 mA BAV99 IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave [3] tp = 1 μs - 4 A tp = 1 ms - 1 A - 0.5 A - 250 mW - 250 mW - 200 mW tp = 1 s [1][4] total power dissipation Ptot BAV99 Tamb ≤ 25 °C BAV99S Tsp ≤ 85 °C BAV99W Tamb ≤ 25 °C [5] Per device BAV99_SER Product data sheet Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Single diode loaded. [2] Double diode loaded. [3] Tj = 25 °C prior to surge. [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [5] Soldering points at pins 2, 3, 5 and 6. All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 6. Thermal characteristics Table 7. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter Conditions Min Typ Max Unit BAV99 - - 500 K/W BAV99W - - 625 K/W - - 360 K/W - - 260 K/W - - 300 K/W thermal resistance from junction to ambient in free air [1][2] thermal resistance from junction to solder point BAV99 [3] BAV99S BAV99W [1] Single diode loaded. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Soldering points at pins 2, 3, 5 and 6. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V IF = 150 mA - - 1.25 V VR = 25 V - - 30 nA VR = 80 V - - 0.5 μA VR = 25 V; Tj = 150 °C - - 30 μA VR = 80 V; Tj = 150 °C - - 50 μA pF Per diode VF IR Cd BAV99_SER Product data sheet reverse current diode capacitance f = 1 MHz; VR = 0 V trr reverse recovery time [1] VFR forward recovery voltage [2] - - 1.5 - - 4 ns - - 1.75 V [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [2] When switched from IF = 10 mA; tr = 20 ns. All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 006aab132 103 IF (mA) 006aab133 102 IR (μA) 10 (1) 1 (2) 102 10−1 10 (3) 10−2 (1) (2) (3) 10−3 (4) 1 10−4 (4) 10−5 10−1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1.4 VF (V) 20 40 (1) Tamb = 150 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C (4) Tamb = −40 °C (4) Tamb = −40 °C Forward current as a function of forward voltage; typical values mbg446 0.8 Cd (pF) 80 100 VR (V) (1) Tamb = 150 °C Fig 1. 60 Fig 2. Reverse current as a function of reverse voltage; typical values mbg704 102 IFSM (A) 0.6 10 0.4 1 0.2 10−1 0 0 4 8 12 VR (V) 1 16 10 102 103 104 tp (μs) f = 1 MHz; Tamb = 25 °C Based on square wave currents. Tj = 25 °C; prior to surge Fig 3. Diode capacitance as a function of reverse voltage; typical values BAV99_SER Product data sheet Fig 4. Non-repetitive peak forward current as a function of pulse duration; maximum values All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAV99_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 9. Package outline 3.0 2.8 2.2 1.8 1.1 0.9 6 3 1.1 0.8 5 4 2 3 0.45 0.15 0.45 0.15 2.2 1.35 2.0 1.15 2.5 1.4 2.1 1.2 1 2 1 0.48 0.38 1.9 0.15 0.09 0.25 0.10 0.3 0.2 0.65 1.3 Dimensions in mm Fig 7. pin 1 index Dimensions in mm 04-11-04 Package outline BAV99 (SOT23/TO-236AB) Fig 8. 06-03-16 Package outline BAV99S (SOT363/SC-88) 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm Fig 9. 04-11-04 Package outline BAV99W (SOT323/SC-70) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 BAV99 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 BAV99S SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 -115 -135 BAV99W [1] BAV99_SER Product data sheet SOT323 4 mm pitch, 8 mm tape and reel For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 10. Reflow soldering footprint BAV99 (SOT23/TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 11. Wave soldering footprint BAV99 (SOT23/TO-236AB) BAV99_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 12. Reflow soldering footprint BAV99S (SOT363/SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 13. Wave soldering footprint BAV99S (SOT363/SC-88) BAV99_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 1 occupied area 0.5 (3×) Dimensions in mm 0.55 (3×) sot323_fr Fig 14. Reflow soldering footprint BAV99W (SOT323/SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 15. Wave soldering footprint BAV99W (SOT323/SC-70) BAV99_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAV99_SER_8 20101118 Product data sheet - BAV99_SER_7 Modifications: • • • Section 4 “Marking”: marking placeholder explanation in table footer updated Section 5 “Limiting values”: Ptot condition for BAV99S corrected Section 13 “Legal information”: updated BAV99_SER_7 20100414 Product data sheet - BAV99_SER_6 BAV99_SER_6 20100310 Product data sheet - BAV99_SER_5 BAV99_SER_5 20080820 Product data sheet - BAV99_4 BAV99S_3 BAV99W_4 BAV99_4 20011015 Product specification - BAV99_3 BAV99S_3 20010514 Product specification - BAV99S_N_2 BAV99W_4 19990511 Product specification - BAV99W_3 BAV99_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. BAV99_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 BAV99 series NXP Semiconductors High-speed switching diodes Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAV99_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 BAV99 series NXP Semiconductors High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 18 November 2010 Document identifier: BAV99_SER