PHILIPS BUK7L3R3

BUK7L3R3-34BRC
N-channel TrenchPLUS standard level FET
Rev. 02 — 26 September 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology, featuring very
low on-state resistance, internal gate resistor, ElectroStatic Discharge (ESD) protection
diodes and clamping diodes that are guaranteed to prevent MOSFET avalanching.
1.2 Features
n Internal gate resistor
n 175 °C rated
n Q101 compliant
n ESD and overvoltage protection
1.3 Applications
n Automotive systems
n Motors, lamps and solenoids
n General purpose power switching
n 12 V loads
1.4 Quick reference data
n EDS(AL)S ≤ 1.9 J
n ID ≤ 75 A
n RDSon = 2.9 mΩ (typ)
n Ptot ≤ 298 W
2. Pinning information
Table 1.
Pinning
Pin
Description
1
gate (G)
2
drain (D)
3
source (S)
mb
mounting base; connected to drain (D)
Simplified outline
Symbol
D
mb
G
S
sym094
1 2 3
SOT78C (TO-220)
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
BUK7L3R3-34BRC
Package
Name
Description
TO-220
plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C
BUK7L3R3-34BRC_2
Product data sheet
Version
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
2 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
drain-source voltage
[1]
VDGR
drain-gate voltage (DC)
[1]
VGS
gate-source voltage
VDS
drain current
ID
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Min
Max
Unit
-
34
V
-
34
V
-
±20
V
[2]
-
218
A
[3][4]
-
75
A
[3]
-
75
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
872
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 1
-
298
W
IDG(CL)
drain-gate clamping current
tp = 5 ms; δ = 0.01
-
50
mA
IGS(CL)
gate-source clamping current
continuous
-
10
mA
tp = 5 ms; δ = 0.01
-
50
mA
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
[2]
-
218
A
[3][4]
-
75
A
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
872
A
unclamped inductive load; ID = 75 A;
VDS ≤ 34 V; RGS = 50 Ω; VGS = 10 V; starting at
Tj = 25 °C
-
1.9
J
-
-
J
C = 100 pF
-
8
kV
C = 250 pF
-
8
kV
Source-drain diode
reverse drain current
IDR
IDRM
peak reverse drain current
Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
EDS(AL)R
repetitive drain-source avalanche
energy
Vesd
electrostatic discharge voltage
[5]
all pins; human body model; R = 1.5 kΩ
[1]
Voltage is limited by clamping.
[2]
Current is limited by power dissipation chip rating.
[3]
Continuous current is limited by package.
[4]
Refer to literature 9397 750 12572 for further information.
[5]
Maximum value not quoted. Refer to application note AN10273 for further information.
a) Repetitive rating defined in Figure 14.
b) Single-pulse avalanche rating limited by a Tj(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
BUK7L3R3-34BRC_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
3 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
03aa16
120
003aaa861
250
ID
(A)
Pder
(%)
200
80
150
100
40
(1)
50
0
0
50
100
150
Tmb (°C)
0
200
0
50
100
150
200
Tmb (°C)
VGS ≥ 10 V
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
(1) Capped at 75 A due to package
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Continuous drain current as a function of
mounting base temperature
003aaa862
104
ID
(A)
103
Limit RDSon = VDS / ID
tp = 10 µ s
100 µ s
102
(1)
1 ms
DC
10 ms
100 ms
10
1
10-1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse
(1) Capped at 75 A due to package
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7L3R3-34BRC_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
4 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
Rth(j-mb)
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to ambient
-
60
-
K/W
thermal resistance from junction to mounting base
-
-
0.5
K/W
003aaa863
1
Zth(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
10-2
δ=
P
0.02
single shot
tp
T
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7L3R3-34BRC_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
5 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
34
-
45
V
Tj = −55 °C
34
-
45
V
-
41
-
V
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
-
-
V
Tj = −55 °C
-
-
4.4
V
Tj = 25 °C
-
0.1
0.6
µA
Tj = 150 °C
-
5
50
µA
Static characteristics
V(BR)DG
drain-gate breakdown voltage ID = 2 mA; VGS = 0 V
IGD(CL) = −2 mA; ID = 1 A; see Figure 17 and 18
VDS(CL)
drain-source clamping
voltage
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10
IDSS
drain leakage current
VDS = 16 V; VGS = 0 V
Tj = 175 °C
V(BR)GSS
gate-source breakdown
voltage
IG = ±1 mA; −55 °C < Tj < +175 °C
IGSS
gate leakage current
VGS = ±10 V; VDS = 0 V
-
30
250
µA
20
22
-
V
Tj = 25 °C
-
5
1000
nA
Tj = 175 °C
-
-
50
µA
-
-
150
µA
-
2.9
3.3
mΩ
-
-
6.3
mΩ
-
11
-
Ω
VGS = ±16 V; VDS = 0 V
Tj = 175 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; see Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
RG
gate resistance
BUK7L3R3-34BRC_2
Product data sheet
[1]
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
6 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
Table 5.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = 25 A; VDS = 27 V; VGS = 10 V;
see Figure 12
-
109
-
nC
-
22
-
nC
-
55
-
nC
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 16
-
5050
6730 pF
-
1300
1560
-
510
690
pF
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω
-
69
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
-
150
-
ns
td(off)
turn-off delay time
-
290
-
ns
tf
fall time
LD
internal drain inductance
internal source inductance
LS
pF
-
210
-
ns
measure from drain lead 6 mm from package to
center of die
-
4.5
-
nH
measure from contact screw on mounting base
to center of die
-
3.5
-
nH
measure from source lead from package to
source bonding pad
-
7.5
-
nH
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; see Figure 13
-
0.85
1.2
V
trr
reverse recovery time
-
93
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
-
65
-
nC
[1]
RDSon measured at 1.5 mm away from the plastic body.
ID
(A)
003aaa869
300
RDSon
(mΩ)
7
10
250
003aaa870
6
8
9
20
5
200
6.5
150
4
6
100
5
50
3
VGS (V) = 4.5
0
2
0
2
4
6
8
VDS (V)
10
Tj = 25 °C
0
10
15
VGS (V)
20
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK7L3R3-34BRC_2
Product data sheet
5
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
7 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
003aaa873
10
RDSon
(mΩ)
03aa27
2
a
1.5
8
5.5
6
6
1
7
8
0.5
4
VGS (V) = 10
0
-60
2
0
40
80
120
160
ID (A)
200
Tj = 25 °C
03aa32
5
120
Tj (°C)
180
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
03aa35
10−1
ID
(A)
VGS(th)
(V)
4
2
min
10−2
max
3
typ
10−3
min
10−4
typ
max
10−5
1
0
60
120
180
Tj (°C)
10−6
0
2
4
6
VGS (V)
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
BUK7L3R3-34BRC_2
Product data sheet
60
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
0
−60
0
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
8 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
003aaa876
100
ID
(A)
003aaa877
10
VGS
(V)
80
8
60
6
VDS = 14 V
40
Tj = 175 °C
VDS = 27 V
4
Tj = 25 °C
20
2
0
0
0
2
4
VGS (V)
6
0
50
100
QG (nC)
150
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaa878
100
IS
(A)
Fig 12. Gate-source voltage as a function of gate
charge; typical values
003aaa868
102
IAL
(A)
80
(1)
10
60
(2)
40
1
20
(3)
Tj = 175 °C
Tj = 25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
VGS = 0 V
10-1
10-3
10-2
10-1
1
tAL (ms)
10
See Table note 5 of Table 3 “Limiting values”.
(1) Single-pulse; Tj = 25 °C
(2) Single-pulse; Tj = 150 °C
(3) Repetitive
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 14. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK7L3R3-34BRC_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
9 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
003aaa875
100
gfs
(S)
003aaa874
8000
C
(pF)
80
Ciss
6000
60
4000
Coss
40
2000
20
Crss
0
0
20
40
0
10-1
60
ID (A)
Tj = 25 °C; VDS = 25 V
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 15. Forward transconductance as a function of
drain current; typical values
003aaa727
43
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aac051
44
VDS(CL)
(V)
VDS(CL)
(V)
42
42
Tj = 175 °C
Tj = 175 °C
Tj = 25 °C
Tj = 25 °C
40
41
Tj = -55 °C
Tj = -55 °C
40
38
39
0
2
4
6
8
ID (A)
10
IGD(CL) = −2 mA
36
-3
-1
IGD(CL) (mA)
0
ID = 10 A
Fig 17. Drain-source clamping voltage as a function of
drain current; typical values
Fig 18. Drain-source clamping voltage as a function of
gate-drain clamping current; typical values
BUK7L3R3-34BRC_2
Product data sheet
-2
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
10 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads
SOT78C
E
A
p
A1
mounting
base
q
D1
q1
D
q2
L1
L
Q
b1
1
2
3
b
c
e
e1
H
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
e1
H
L
L1
p
Q
q
q1
q2
mm
4.58
4.31
1.33
1.21
0.87
0.76
1.33
1.21
0.44
0.33
15.07
14.80
6.47
6.22
10.40
10.00
2.64
2.44
5.16
5.00
6.03
5.76
14.00
13.50
6.10
5.58
3.90
3.78
2.72
2.40
2.95
2.69
3.80
3.42
12.40
12.00
Notes
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT78C
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220
EUROPEAN
PROJECTION
ISSUE DATE
01-12-11
03-01-21
Fig 19. Package outline SOT78C (TO-220)
BUK7L3R3-34BRC_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
11 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
8. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK7L3R3-34BRC_2
20070926
Product data sheet
-
BUK7L3R3-34BRC_1
Modifications:
BUK7L3R3-34BRC_1
•
•
Table 5: updated maximum value of drain leakage current
Table 5: added Table note 1
20070515
Product data sheet
-
BUK7L3R3-34BRC_2
Product data sheet
-
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
12 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BUK7L3R3-34BRC_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 26 September 2007
13 of 14
BUK7L3R3-34BRC
NXP Semiconductors
N-channel TrenchPLUS standard level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 26 September 2007
Document identifier: BUK7L3R3-34BRC_2