BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 — 29 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in Automotive critical applications. 1.2 Features n Very low on-state resistance n 175 °C rated n Q101 compliant n Standard level compatible 1.3 Applications n Automotive systems n Motors, lamps and solenoids n General purpose power switching n 12 V and 24 V loads 1.4 Quick reference data n EDS(AL)S ≤ 351 mJ n ID ≤ 75 A n RDSon = 5.8 mΩ (typ) n Ptot ≤ 203 W 2. Pinning information Table 1. Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to drain (D) Simplified outline Symbol mb D G mbb076 1 2 3 SOT226 (I2PAK) S BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number BUK7E07-55B Package Name Description Version I2PAK plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage VDGR drain-gate voltage (DC) VGS gate-source voltage drain current ID Conditions RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 [1] Min Max Unit - 55 V - 55 V - ±20 V - 119 A 75 A - 75 A [2] Tmb = 100 °C; VGS = 10 V; see Figure 2 [2] IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 478 A Tmb = 25 °C; see Figure 1 - 203 W Ptot total power dissipation Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IDR reverse drain current Tmb = 25 °C - 75 A IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 478 A - 351 mJ - - [2] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Unclamped inductive load; ID = 75 A; VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω; starting at Tj = 25 °C EDS(AL)R repetitive drain-source avalanche energy Repetitive rating defined in Figure 16 [1] Current is limited by chip power dissipation rating. [2] Continuous current is limited by package. [3] Conditions: a) Maximum value not quoted. b) Single-pulse avalanche rating limited by Tj(max) of 175 °C. c) Repetitive avalanche rating limited by an average junction temperature of 170 °C. d) Refer to application note AN10273 for further information. BUK7E07-55B_1 Product data sheet [3] J © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 2 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aab844 120 003aac120 120 Pder (%) ID (A) 80 80 40 40 0 (1) 0 0 50 100 150 200 0 50 100 Tmb (°C) 200 Tmb (°C) VGS ≥ 10 V P tot P der = ------------------------ × 100 % P tot ( 25°C ) (1) Capped at 75 A due to package. Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Continuous drain current as a function of mounting base temperature 003aac121 103 ID (A) 150 tp = 10 µs Limit RDSon = VDS / ID 102 100 µs (1) 1 ms 10 10 ms DC 100 ms 1 10−1 1 102 10 VDS (V) Tmb = 25 °C; IDM is single pulse. (1) Capped at 75 A due to package. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7E07-55B_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 3 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to mounting base - - - 0.74 K/W thermal resistance from junction to ambient - 60 - K/W vertical in still air 003aac122 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10−1 0.1 0.05 0.02 δ= P 10−2 tp T single pulse t tp 10−3 10−6 T 10−5 10−4 10−3 10−2 10−1 1 tp (s) Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7E07-55B_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 4 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 55 - - V Tj = −55 °C 50 - - V Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V gate-source threshold voltage drain leakage current ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V VDS = 55 V; VGS = 0 V Tj = 25 °C - 0.02 1 µA Tj = 175 °C - - 500 µA - 2 100 nA VGS = ±20 V; VDS = 0 V IGSS gate leakage current RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; see Figure 6 and 8 Tj = 25 °C - 5.8 7.1 mΩ Tj = 175 °C - - 14.2 mΩ - 53 - nC Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 44 V; VGS = 10 V; see Figure 14 QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time LD internal drain inductance measured from drain lead 6 mm from package to centre of die LS internal source inductance measured from source lead - 12 - nC - 17 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12 - 2820 3760 pF - 554 665 pF - 200 274 pF VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω - 24 - ns - 52 - ns - 77 - ns - 41 - ns - 4.5 - nH - 7.5 - nH 0.85 1.2 V to source bond pad Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; see Figure 15 - trr reverse recovery time 62 - ns recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; VR = 30 V - Qr - 60 - nC BUK7E07-55B_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 5 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac123 300 20 10 9.0 RDSon (mΩ) VGS (V) = 8.5 ID (A) 003aac124 25 20 8.0 200 7.5 15 7.0 10 6.5 100 6.0 5.5 5 5.0 4.5 0 0 0 2 4 6 8 10 VDS (V) 5 15 20 VGS (V) Tj = 25 °C Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aac125 25 RDSon (mΩ) 10 003aab906 2 a VGS (V) = 6.0 6.5 20 7.0 1.5 7.5 8.0 9.0 15 1 10 10 0.5 5 0 0 100 200 300 0 −60 0 Tj = 25 °C 120 180 R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature BUK7E07-55B_1 Product data sheet 60 Tj (°C) ID (A) © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 6 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aab852 5 003aab853 10−1 ID (A) VGS(th) (V) 4 3 typ max 10−3 typ 2 min 10−2 max 10−4 min 10−5 1 0 −60 10−6 0 60 120 160 0 2 4 Tj (°C) 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aac126 60 003aac127 4 C (nF) gfs (S) Ciss 3 40 2 Coss 20 1 Crss 0 0 25 50 75 100 0 10−2 10−1 ID (A) Tj = 25 °C; VDS = 25 V 102 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7E07-55B_1 Product data sheet 1 © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 7 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 003aac128 100 003aac129 10 VGS (V) ID (A) VDD = 14 V 8 VDD = 44 V 75 6 50 4 25 Tj = 175 °C Tj = 25 °C 2 0 0 0 2 4 6 8 0 20 40 VGS (V) 60 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aac130 100 IS (A) Fig 14. Gate-source voltage as a function of gate charge; typical values 003aac131 102 IAL (A) (1) 75 10 (2) 50 Tj = 175 °C Tj = 25 °C (3) 1 25 0 0.0 0.5 1.0 1.5 10−1 10−3 10−2 10−1 VSD (V) VGS = 0 V 1 10 tAL (ms) See Table note 3 of Table 3 Limiting values. (1) Single-pulse; Tj = 25 °C. (2) Single-pulse; Tj = 150 °C. (3) Repetitive. Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values Fig 16. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7E07-55B_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 8 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226 A A1 E D1 mounting base D L1 Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D max D1 E e L L1 Q mm 4.5 4.1 1.40 1.27 0.85 0.60 1.3 1.0 0.7 0.4 11 1.6 1.2 10.3 9.7 2.54 15.0 13.5 3.30 2.79 2.6 2.2 OUTLINE VERSION SOT226 REFERENCES IEC JEDEC JEITA low-profile 3-lead TO-220AB EUROPEAN PROJECTION ISSUE DATE 05-06-23 06-02-14 Fig 17. Package outline SOT226 (I2PAK) BUK7E07-55B_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 9 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7E07-55B_1 20080129 Product data - - BUK7E07-55B_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 10 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BUK7E07-55B_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 29 January 2008 11 of 12 BUK7E07-55B NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 January 2008 Document identifier: BUK7E07-55B_1