BLF6G20-180PN Power LDMOS transistor Rev. 03 — 30 March 2009 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. VDS PL(AV) Gp ηD ACPR (MHz) (V) (W) (dB) (%) (dBc) 1805 to 1880 32 50 18 29.5 −35[1] Mode of operation f 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 32 V and an IDq of 1600 mA: u Average output power = 50 W u Power gain = 18 dB (typ) u Efficiency = 29.5 % u ACPR = −35 dBc n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (1800 MHz to 2000 MHz) n Internally matched for ease of use n Qualified up to a supply voltage of 32 V n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 1.3 Applications n RF power amplifiers for W-CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name BLF6G20-180PN - Description Version flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V Tstg storage temperature −65 +150 °C Tcase case temperature - 150 °C Tj junction temperature - 225 °C BLF6G20-180PN_3 Product data sheet Min © NXP B.V. 2009. All rights reserved. Rev. 03 — 30 March 2009 2 of 11 BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Rth(j-case) thermal resistance from junction to case Conditions Typ Unit Tcase = 80 °C; PL(AV) = 50 W 0.45 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VDS = 10 V; ID = 144 mA 1.575 1.9 2.3 V 1.725 2.1 2.45 V VDS = 28 V - - 3 µA VDS = 60 V - - 5 µA VGS(th) gate-source threshold voltage VGSq gate-source quiescent voltage VDS = 32 V; ID = 800 mA IDSS drain leakage current VGS = 0 V IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 25 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 7.2 A - 10 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5 A - 0.1 0.165 Ω 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 1802.5 MHz; f2 = 1807.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 50 W 16.8 18 19.2 dB RLin input return loss PL(AV) = 50 W - −10 −6.5 dB ηD drain efficiency PL(AV) = 50 W 26 29.5 - % ACPR adjacent channel power ratio PL(AV) = 50 W - −35 dBc −33 Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 1872.5 MHz; f2 = 1877.5 MHz; RF performance at VDS = 32 V; IDq = 1600 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PARO output peak-to-average ratio Conditions Min Typ Max Unit PL(AV) = 115 W; at 0.01 % probability on CCDF 4.1 4.3 BLF6G20-180PN_3 Product data sheet - dB © NXP B.V. 2009. All rights reserved. Rev. 03 — 30 March 2009 3 of 11 BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 7.1 Ruggedness in class-AB operation The BLF6G20-180PN is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1600 mA; PL = 180 W (CW); f = 1880 MHz. 001aai017 20 Gp (dB) 60 ηD (%) Gp 18 40 ηD 16 20 14 0 40 80 120 0 160 200 PL(AV) (W) VDS = 32 V; IDq = 1600 mA; f = 1880 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of average load power; typical values 001aai018 22 50 ηD (%) Gp (dB) 40 20 Gp 18 001aai019 −10 IMD (dBc) IMD3 −30 30 ηD IMD5 IMD7 20 16 −50 10 14 12 0 Fig 2. 100 0 300 200 −70 0 100 200 300 PL(PEP) (W) PL(PEP) (W) VDS = 32 V; IDq = 1600 mA; f1 = 1880 MHz; f2 = 1880.1 MHz. VDS = 32 V; IDq = 1600 mA; f1 = 1880 MHz; f2 = 1880.1 MHz. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values Fig 3. Two-tone intermodulation distortion as a function of peak envelope load power; typical values BLF6G20-180PN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 30 March 2009 4 of 11 BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 001aai020 22 40 ηD (%) Gp (dB) 20 001aai021 −20 ACPR (dBc) 30 −30 20 −40 10 −50 0 −60 Gp 18 ηD 16 14 0 20 40 60 0 20 40 PL (W) VDS = 32 V; IDq = 1600 mA; f1 = 1872.5 MHz; f2 = 1877.5 MHz; carrier spacing 5 MHz. Fig 4. VDS = 32 V; IDq = 1600 mA; f1 = 1872.5 MHz; f2 = 1877.5 MHz; carrier spacing 5 MHz. 2-carrier W-CDMA power gain and drain efficiency as function of load power; typical values 001aai022 22 40 ηD (%) Gp (dB) 20 30 Fig 5. 2-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values 001aai023 −20 ACPR, IMD3 (dBc) −30 IMD3 Gp 18 20 −40 ηD ACPR 16 14 0 20 40 10 −50 0 −60 60 0 PL (W) 2-carrier W-CDMA power gain and drain efficiency as function of load power; typical values 40 60 VDS = 32 V; IDq = 1600 mA; f1 = 1867.5 MHz; f2 = 1877.5 MHz; carrier spacing 10 MHz. Fig 7. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as function of load power; typical values BLF6G20-180PN_3 Product data sheet 20 PL (W) VDS = 32 V; IDq = 1600 mA; f1 = 1867.5 MHz; f2 = 1877.5 MHz; carrier spacing 10 MHz. Fig 6. 60 PL (W) © NXP B.V. 2009. All rights reserved. Rev. 03 — 30 March 2009 5 of 11 BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 8. Test information C3 C9 C13 C5 C14 C11 R3 input 50 Ω output 50 Ω C6 C1 R1 C7 R2 C2 C8 C10 C12 C4 001aai024 See Table 9 for list of components. Fig 8. Test circuit for operation at 1805 MHz and 1880 MHz BLF6G20-180PN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 30 March 2009 6 of 11 BLF6G20-180PN NXP Semiconductors Power LDMOS transistor C14 C5 C13 R3 C11 C3 C9 C6 R1 C1 C7 INPUT R2 R1 C2 C8 C10 C12 C4 TB OUTPUT R1 TB 001aai025 Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 9. Component layout for 1805 MHz and 1880 MHz test circuit Table 9. List of components For test circuit, see Figure 8 and Figure 9. Component Description Value C1 ATC multilayer ceramic chip capacitor 6.2 pF [1] C2, C3 ATC multilayer ceramic chip capacitor 16 pF [1] C4, C5, C6 ATC multilayer ceramic chip capacitor 18 pF [2] C7 ATC multilayer ceramic chip capacitor 1.1 pF [3] C8, C9, C10, C11 TDK multilayer ceramic chip capacitor 4.7 µF C12, C13 AVX multilayer ceramic chip capacitor 220 nF C14 electrolytic capacitor 100 µF; 63 V R1 chip resistor 33 Ω R2, R3 chip resistor 8.2 Ω [1] American Technical Ceramics type 100B or capacitor of same quality. [2] American Technical Ceramics type 180R or capacitor of same quality. [3] American Technical Ceramics type 100A or capacitor of same quality. BLF6G20-180PN_3 Product data sheet Remarks [2] © NXP B.V. 2009. All rights reserved. Rev. 03 — 30 March 2009 7 of 11 BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 e E E1 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 mm inches 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72 p Q q 3.30 3.05 2.31 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 0.210 0.465 0.006 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 0.156 0.455 0.003 1.218 1.219 1.615 0.395 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-28 00-03-03 SOT539A Fig 10. Package outline SOT539A BLF6G20-180PN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 30 March 2009 8 of 11 BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel IMD InterModulation Distortion LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G20-180PN_3 20090330 Product data sheet - BLF6G20-180PN_2 BLF6G20-180PN_2 20090121 Preliminary data sheet - BLF6G20-180PN_1 Modifications: BLF6G20-180PN_1 • • Table 7 on page 3: Maximum adjacent channel power ratio changed Table 8 on page 3: Minimum output peak-to-average ratio changed 20080428 Objective data sheet BLF6G20-180PN_3 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 03 — 30 March 2009 9 of 11 BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G20-180PN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 30 March 2009 10 of 11 BLF6G20-180PN NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 March 2009 Document identifier: BLF6G20-180PN_3