BLF6G21-10G Power LDMOS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 −50[1] 1-carrier W-CDMA 2110 to 2170 28 2 19.3 31 −39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: u Average output power = 0.7 W u Gain = 18.5 dB u Efficiency = 15 % u ACPR = −50 dBc n Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: u Average output power = 2 W u Gain = 19.3 dB u Efficiency = 31 % u ACPR = −39 dBc n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency BLF6G21-10G NXP Semiconductors Power LDMOS transistor n Excellent thermal stability n No internal matching for broadband operation n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multi carrier applications in the HF to 2200 MHz frequency range n Broadcast drivers 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 2 3 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF6G21-10G Package Name Description Version - ceramic surface-mounted package; 2 leads SOT538A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLF6G21-10G_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 2 of 11 BLF6G21-10G NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL(AV) = 11 W [1] [1] Typ Unit 3.2 K/W Thermal resistance is determined under specified RF operating conditions 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 18 mA 1.4 1.9 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 3.1 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 150 nA gfs forward transconductance VDS = 10 V; ID = 0.9 A - 0.5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 0.625 A - 0.4 - Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 0.5 - pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 0.7 W - 18.5 - dB ηD drain efficiency PL(AV) = 0.7 W - 15 - % ACPR adjacent channel power ratio PL(AV) = 0.7 W - −50 - dBc Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 2 W 17.3 19.3 - dB ηD drain efficiency PL(AV) = 2 W 29 31 - % ACPR adjacent channel power ratio PL(AV) = 2 W - −39 −36 dBc 7.1 Ruggedness in class-AB operation The BLF6G21-10G is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 2140 MHz at PL = 10 W. BLF6G21-10G_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 3 of 11 BLF6G21-10G NXP Semiconductors Power LDMOS transistor 7.2 CW 001aal120 50 RLin (dB) 40 (1) 30 20 (2) (3) 10 0 0 4 8 12 16 PL (W) VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 1. CW input return loss as a function of load power; typical values 001aal121 19.5 001aal122 80 ηD (%) Gp (dB) 60 (1) (2) (3) 18.5 40 17.5 (1) (2) (3) 20 16.5 0 0 4 8 12 16 0 4 8 PL (W) VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz CW power gain as a function of load power; typical values Fig 3. CW drain efficiency as a function of load power; typical values BLF6G21-10G_2 Product data sheet 16 PL (W) VDS = 28 V; IDq = 100 mA. Fig 2. 12 © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 4 of 11 BLF6G21-10G NXP Semiconductors Power LDMOS transistor 7.3 1-carrier W-CDMA 001aal123 50 RLin (dB) 40 (1) 30 20 (2) (3) 10 0 0 1 2 3 4 PL (W) VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 4. 1-carrier W-CDMA input return loss as a function of load power; typical values 001aal124 20.0 001aal125 50 ηD (%) Gp (dB) 19.6 40 19.2 30 (1) (2) (3) 18.8 (1) (2) (3) 20 18.4 10 18.0 0 0 1 2 3 4 0 1 2 PL (W) VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz 1-carrier W-CDMA power gain as a function of load power; typical values Fig 6. 1-carrier W-CDMA drain efficiency as a function of load power; typical values BLF6G21-10G_2 Product data sheet 4 PL (W) VDS = 28 V; IDq = 100 mA. Fig 5. 3 © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 5 of 11 BLF6G21-10G NXP Semiconductors Power LDMOS transistor 001aal126 −30 001aal127 −52 ACPR (dBc) ACPR (dBc) −40 −56 (3) (2) (1) −50 −60 (3) (2) (1) −60 −64 0 1 2 3 4 0 1 2 PL (W) 4 PL (W) VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz. VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz. (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz Fig 7. 3 1-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values Fig 8. 1-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values 7.4 2-carrier W-CDMA 001aal128 40 RLin (dB) (1) 30 20 (2) (3) 10 0 0 0.6 1.2 1.8 PL (W) VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 9. 2-carrier W-CDMA input return loss as a function of load power; typical values BLF6G21-10G_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 6 of 11 BLF6G21-10G NXP Semiconductors Power LDMOS transistor 001aal129 20.0 Gp (dB) 001aal130 30 ηD (%) 19.6 20 19.2 (1) (2) (3) 18.8 (1) (2) (3) 10 18.4 18.0 0 0 0.6 1.2 1.8 0 0.6 1.2 PL (W) 1.8 PL (W) VDS = 28 V; IDq = 100 mA. VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz Fig 10. 2-carrier W-CDMA power gain as a function of load power; typical values 001aal131 −30 Fig 11. 2-carrier W-CDMA drain efficiency as a function of load power; typical values 001aal132 −40 ACPR (dBc) ACPR (dBc) −45 −40 (3) (2) (1) −50 (3) (2) (1) −50 −55 −60 −60 0 0.6 1.2 1.8 0 PL (W) 1.2 1.8 PL (W) VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz. VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz. (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz Fig 12. 2-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values Fig 13. 2-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values BLF6G21-10G_2 Product data sheet 0.6 © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 7 of 11 BLF6G21-10G NXP Semiconductors Power LDMOS transistor 8. Package outline Ceramic surface-mounted package; 2 leads SOT538A D A 3 z2 (4×) z4 (4×) D1 D2 B c 1 L A z1 (4×) E2 H E1 E z3 (4×) 2 α w1 M B M b Q 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 E E1 E2 H L Q w1 z1 z2 z3 z4 α mm 2.95 2.29 1.35 1.19 0.23 0.18 5.16 5.00 4.65 4.50 5.16 5.00 4.14 3.99 3.63 3.48 4.14 3.99 7.49 7.24 2.03 1.27 0.10 0.00 0.25 0.58 0.43 0.25 0.18 0.97 0.81 0.51 0.00 7° 0° inches 0.116 0.090 0.053 0.047 0.009 0.007 0.203 0.197 0.183 0.177 0.203 0.197 0.163 0.157 0.143 0.137 0.163 0.157 0.295 0.285 0.080 0.050 0.023 0.010 0.017 0.007 0.038 0.032 0.020 0.000 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC JEITA 0.004 0.010 0.000 EUROPEAN PROJECTION ISSUE DATE 02-08-20 06-03-16 SOT538A Fig 14. Package outline SOT538A BLF6G21-10G_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 8 of 11 BLF6G21-10G NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel PHS Personal Handy-phone System RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G21-10G_2 20091211 Product data sheet - BLF6G21-10G_1 Modifications: BLF6G21-10G_1 • • • • • • Section 6 on page 3: added some values. Table 7 on page 3: added some values. Section 7.1 on page 3: added some values. Section 7.2 on page 4: added CW powersweeps. Section 7.3 on page 5: added 1-carrier W-CDMA powersweeps. Section 7.4 on page 6: added 2-carrier W-CDMA powersweeps. 20090511 Objective data sheet BLF6G21-10G_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 9 of 11 BLF6G21-10G NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G21-10G_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 11 December 2009 10 of 11 BLF6G21-10G NXP Semiconductors Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 December 2009 Document identifier: BLF6G21-10G_2