DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage 40 V ICM peak collector current 3 A RCEsat equivalent on-resistance <200 mΩ • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. PARAMETER MAX. UNIT PINNING PIN APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector DESCRIPTION handbook, halfpage NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. PNP complement: PBSS5240Y. 6 5 4 1, 2, 5, 6 3 MARKING 4 PBSS4240Y 1 MARKING CODE(1) TYPE NUMBER 3 MAM441 42* Note Fig.1 1. * = p: made in Hongkong. * = t: made in Malaysia. 2001 Jul 13 2 Top view 2 Simplified outline (SOT363; SC-88) and symbol. Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 2 A ICM peak collector current − 3 A IBM peak base current − 300 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 270 mW Tamb ≤ 25 °C; note 2 − 430 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; note 1 463 K/W in free air; note 2 291 K/W Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2. 2001 Jul 13 3 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. VCB = 30 V; IE = 0 − − 100 nA VCB = 30 V; IE = 0; Tj = 150 °C − − 50 µA nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 − − 100 hFE DC current gain VCE = 2 V; IC = 100 mA 350 470 − VCE = 2 V; IC = 500 mA 300 450 − VCE = 2 V; IC = 1 A 300 420 − VCEsat collector-emitter saturation voltage UNIT VCE = 2 V; IC = 2 A 150 250 − IC = 100 mA; IB = 1 mA − 45 70 mV IC = 500 mA; IB = 50 mA − 70 100 mV IC = 750 mA; IB = 15 mA − 120 180 mV IC = 1 A; IB = 50 mA − 130 180 mV IC = 2 A; IB = 200 mA − 240 320 mV − 140 <200 mΩ RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 VBEsat base-emitter saturation voltage IC = 2 A; IB = 200 mA − − 1.1 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA − − 0.75 V Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − 15 20 pF fT transition frequency IC = 100 mA; VCE = 10 V; f = 100 MHz 100 230 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2001 Jul 13 4 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2001 Jul 13 REFERENCES IEC JEDEC EIAJ SC-88 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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