DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Nov 05 2002 Jun 20 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V FEATURES QUICK REFERENCE DATA • 300 mW total power dissipation SYMBOL • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package VCEO collector-emitter voltage 40 V IC collector current (DC) 1 A ICRP peak collector current 2 A RCEsat equivalent on-resistance <190 mΩ • Improved thermal behaviour due to flat leads • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High current capabilities PARAMETER MAX. UNIT PINNING • Reduced required PCB area. PIN APPLICATIONS DESCRIPTION 1 collector 2 collector • General purpose switching and muting 3 base • LCD backlighting 4 emitter • Supply line switching circuits 5 collector • Battery driven equipment (mobile phones, video cameras and hand-held devices). 6 collector DESCRIPTION handbook, halfpage NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V. 6 5 4 1, 2, 5, 6 3 MARKING TYPE NUMBER PBSS4140V 4 MARKING CODE 1 22 Top view Fig.1 2002 Jun 20 2 2 3 MAM444 Simplified outline (SOT666) and symbol. Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 3 A ICRP repetitive peak collector current − 2 A IB base current (DC) − 300 mA IBM peak base current − 1 A Ptot total power dissipation Tamb ≤ 25 °C; note 2 − 300 mW Tamb ≤ 25 °C; note 3 − 500 mW Tamb ≤ 25 °C; notes 1 and 2 − 1.2 W note 1 Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Operated under pulsed conditions: tp ≤ 30 ms; δ ≤ 0.2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT note 1 410 K/W note 2 215 K/W notes 1 and 3 110 K/W Notes 1. Device mounted on a printed circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Operated under pulsed conditions: tp ≤ 30 ms; δ ≤ 0.2. Soldering The only recommended soldering method is reflow soldering. 2002 Jun 20 3 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 40 V; IE = 0 − − 100 nA VCB = 40 V; IE = 0; Tamb = 150 °C − − 50 µA VCE = 30 V; IB = 0 − − 100 nA nA ICEO collector-emitter cut-off current IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 hFE DC current gain VCE = 5 V; IC = 1 mA 300 − − VCE = 5 V; IC = 500 mA 300 − 900 VCE = 5 V; IC = 1 A 200 − − VCE = 5 V; IC = 2 A; note 1 75 − − − 50 80 mV IC = 500 mA; IB = 50 mA − 70 110 mV IC = 1 A; IB = 100 mA; note 1 − 150 190 mV IC = 2 A; IB = 200 mA; note 1 − 320 440 mV − 150 <190 mΩ VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA; note 1 VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.2 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A − − 1.1 V fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 10 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2002 Jun 20 4 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V MLD746 1000 MLD747 10 handbook, halfpage handbook, halfpage hFE 800 VBE (1) (V) 600 (2) (1) 1 400 (2) (3) (3) 200 0 −10−1 −1 −10 −102 10−1 10−1 −103 −104 IC (mA) 1 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD748 103 handbook, halfpage 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD749 102 handbook, halfpage VCEsat RCEsat (mV) (Ω) 102 102 10 10 (1) (2) (3) 10 1 (1) (2) (3) 1 10−1 1 10 102 IC (mA) 10−1 10−1 103 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Jun 20 5 1 10 102 IC (mA) 103 Equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V MLD750 400 handbook, halfpage fT (MHz) 300 200 100 0 0 200 400 600 1000 800 IC (mA) VCE = 10 V. Fig.6 Transition frequency as a function of collector current. 2002 Jun 20 6 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2002 Jun 20 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Jun 20 8 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V NOTES 2002 Jun 20 9 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V NOTES 2002 Jun 20 10 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4140V NOTES 2002 Jun 20 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp12 Date of release: 2002 Jun 20 Document order number: 9397 750 09428