DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGU2003 SiGe MMIC amplifier Preliminary specification 2002 May 17 Philips Semiconductors Preliminary specification SiGe MMIC amplifier BGU2003 PINNING FEATURES • Low current PIN DESCRIPTION • Very high power gain 1 GND • Low noise figure 2 RF in • Integrated temperature compensated biasing 3 CTRL (bias current control) • Control pin for adjustment bias current 4 VS + RF out • Supply and RF output pin combined. APPLICATIONS handbook, halfpage • RF front end 3 CTRL 4 • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) VS+RFout BIAS CIRCUIT • Low noise amplifiers • Satellite television tuners (SATV) 2 • High frequency oscillators. Top view 1 RFin GND MAM427 DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. Marking code: A6 Fig.1 Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VS DC supply voltage RF input AC coupled − 4.5 V IS DC supply current VVS-OUT = 2.5 V; ICTRL = 1 mA; RF input AC coupled 10 − mA MSG maximum stable gain VVS-OUT = 2.5 V; f = 1 800 MHz; Tamb = 25 °C 18 − dB NF noise figure VVS-OUT = 2.5 V; f = 1 800 MHz; ΓS = Γopt 1.1 − dB 2002 May 17 2 Philips Semiconductors Preliminary specification SiGe MMIC amplifier BGU2003 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 4.5 V − 2 V − 30 mA − 3 mA − 135 mW storage temperature −65 +150 °C operating junction temperature − 150 °C VS supply voltage VCTRL voltage on control pin IS supply current (DC) ICTRL control current Ptot total power dissipation Tstg Tj RF input AC coupled forced by DC voltage on RF input or ICTRL Ts ≤ 100 °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE UNIT 350 K/W CHARACTERISTICS RF input AC coupled; Tj = 25 °C; unless otherwise specified. SYMBOL IS MSG |s21|2 s12 NF IP3(out) 2002 May 17 PARAMETER supply current maximum stable gain insertion power gain isolation noise figure output intercept point; ZS = ZL 50 Ω CONDITIONS MIN. TYP. MAX. UNIT VVS-OUT = 2.5 V; ICTRL = 0.4 mA 2.5 4.5 6.5 mA VVS-OUT = 2.5 V; ICTRL = 1.0 mA 6 10 15 mA VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 900 MHz − 23 − dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 1800 MHz − 18 − dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 900 MHz 18 19 − dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 1800 MHz 13 14 − dB VVS-OUT = 2.5 V; IVS-OUT = 0; f = 900 MHz − 26 − dB VVS-OUT = 2.5 V; IVS-OUT = 0; f = 1800 MHz − 20 − dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 900 MHz; ΓS = Γopt − 1.0 2 dB VVS-OUT = 2.5 V; IVS-OUT = 10 mA; f = 1800 MHz; ΓS = Γopt − 1.1 2 dB VVS-OUT = 2.3 V; IVS-OUT = 10 mA; f = 900 MHz − 19 − dBm VVS-OUT = 2.3 V; IVS-OUT = 10 mA; f = 1800 MHz − 21 − dBm 3 Philips Semiconductors Preliminary specification SiGe MMIC amplifier BGU2003 MGS537 200 handbook, halfpage handbook, halfpage 100 pF Ptot (mW) R1 VS 150 L1 C RF out RCTRL VCTRL 3 100 4 BGA2003 50 2 1 C 0 0 RF in 50 100 150 MGS536 Fig.2 Typical application circuit. Ts (°C) 200 Fig.3 Power derating. MGS538 2.5 MGS539 30 handbook, halfpage handbook, halfpage I CTRL (mA) I VS-OUT (mA) 2 20 1.5 1 10 0.5 0 0 0 0.5 1 1.5 2 VCTRL (V) 0 0.5 1 1.5 2 I CTRL (mA) 2.5 VS-OUT = 2.5 V. Fig.4 Control current as a function of the control voltage on pin 3; typical values. 2002 May 17 Fig.5 4 Bias current as a function of the control current; typical values. Philips Semiconductors Preliminary specification SiGe MMIC amplifier BGU2003 Scattering parameters: VS = 2.5 V; IS = 10 mA; Tamb = 25 °C s11 s21 s12 s22 f (MHz) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 100 0.837 −10.6 19.216 163.9 0.007 77.3 0.976 −7.1 200 0.783 −19.9 17.589 151.7 0.012 77.2 0.920 −13.2 300 0.713 −28.4 16.321 142.4 0.018 76.7 0.861 −17.1 400 0.645 −36.0 15.046 134.5 0.022 72.9 0.805 −19.8 500 0.581 −42.0 13.701 127.7 0.027 75.2 0.759 −21.9 600 0.519 −47.1 12.709 121.6 0.031 74.8 0.718 −22.8 700 0.474 −50.8 11.602 116.8 0.034 75.0 0.689 −23.4 800 0.433 −53.3 10.631 112.6 0.038 75.3 0.664 −24.1 900 0.397 −55.2 9.791 108.8 0.042 76.3 0.644 −24.4 1000 0.369 −56.9 8.951 106.0 0.046 76.1 0.627 −25.2 1100 0.342 −58.4 8.314 103.6 0.050 77.3 0.610 −25.6 1200 0.320 −60.2 7.730 101.1 0.055 77.6 0.599 −26.4 1300 0.301 −62.1 7.275 99.4 0.058 78.4 0.591 −27.2 1400 0.286 −64.4 6.912 97.1 0.063 78.1 0.583 −28.0 1500 0.273 −66.7 6.493 94.8 0.066 78.2 0.578 −28.6 1600 0.262 −68.5 6.078 93.5 0.071 78.9 0.572 −29.0 1700 0.252 −7.08 5.783 91.8 0.074 78.9 0.564 −29.6 1800 0.241 −73.7 5.475 90.9 0.078 79.8 0.553 −30.0 1900 0.229 −77.0 5.289 89.9 0.083 79.7 0.543 −30.7 2000 0.221 −81.1 5.094 88.4 0.088 79.5 0.530 −31.9 2100 0.216 −85.5 4.911 87.2 0.092 79.4 0.518 −33.6 2200 0.215 −88.9 4.779 85.6 0.098 79.6 0.512 −35.6 2300 0.229 −91.6 4.588 84.3 0.104 78.7 0.515 −38.2 2400 0.237 −97.0 4.446 83.8 0.107 78.6 0.515 −40.7 2500 0.240 −99.3 4.325 82.3 0.111 79.1 0.523 −42.3 2600 0.243 −101.1 4.145 81.9 0.115 80.1 0.532 −43.0 2700 0.243 −102.9 4.105 81.6 0.121 80.4 0.537 −43.3 2800 0.238 −104.9 4.038 80.2 0.124 80.4 0.538 −43.0 2900 0.233 −106.8 3.924 78.5 0.129 80.3 0.532 −43.2 3000 0.224 −109.0 3.795 76.7 0.132 80.0 0.519 −43.1 Noise parameters: VS = 2.5 V; IS = 10 mA; Tamb = 25 °C gamma opt. f (MHz) NFmin (dB) MAGNITUDE (ratio) ANGLE (deg) Rn / 50 Ω 900 1.0 0.19 14 0.16 1800 1.1 0.08 60 0.14 2500 1.3 0.07 90 0.14 2002 May 17 5 Philips Semiconductors Preliminary specification SiGe MMIC amplifier BGU2003 PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343R 2002 May 17 EUROPEAN PROJECTION 6 Philips Semiconductors Preliminary specification SiGe MMIC amplifier BGU2003 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 May 17 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125006/04/pp8 Date of release: 2002 May 17 Document order number: 9397 750 09849