PHILIPS BGA2011

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGA2011
900 MHz high linear low noise
amplifier
Product specification
Supersedes data of 2000 Sep 06
2000 Dec 04
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
FEATURES
BGA2011
PINNING
• Low current, low voltage
PIN
DESCRIPTION
• High linearity
1
RF in
• High power gain
2
VC
• Low noise
3
VS
4
RF out
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.
5, 6
GND
APPLICATIONS
VS
handbook, halfpage
• RF front end
6
5
4
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
RF out
DESCRIPTION
BIAS
CIRCUIT
VC
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
1
2
3
Top view
RF in
MBL251
GND
Marking code:A5-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VS
DC supply voltage
IS
DC supply current
CONDITIONS
RF input AC coupled
TYP.
MAX.
UNIT
3
4.5
V
15
−
mA
IC
DC control current
VC = VS
0.11
−
mA
|s21|2
insertion power gain
in application circuit, see Fig.2;
f = 900 MHz
19
−
dB
NF
noise figure
IS = 15 mA; f = 900 MHz
1.7
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
VS
DC supply voltage
VC
voltage on control pin
IS
supply current
IC
control current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
2000 Dec 04
CONDITIONS
RF input AC coupled
forced by DC voltage on RF input
Ts ≤ 100 °C
2
MIN.
MAX.
UNIT
−
4.5
V
−
VS
V
−
30
mA
−
0.25
mA
−
135
mW
−65
+150
°C
−
150
°C
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction
to solder point
VALUE
UNIT
350
K/W
Ptot = 135 mW; Ts ≤ 100 °C
CHARACTERISTICS
RF input AC coupled; VS = 3 V; IS = 15 mA; f = 900 MHz; Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
IS
supply current
IC
control current
RL IN
return losses input
RL OUT
|s21|2
NF
IP3in
2000 Dec 04
return losses output
insertion power gain
noise figure
input intercept point
CONDITIONS
MIN.
TYP.
MAX.
UNIT
10
15
20
mA
−
0.11
−
mA
typical application; see Fig.2
−
−11
−
dB
high IP3 (see Fig.2; stripline = 0 mm)
−
−11
−
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
−
−17
−
dB
typical application; see Fig.2
−
−11
−
dB
high IP3 (see Fig.2; stripline = 0 mm)
−
−12
−
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
−
−14
−
dB
typical application; see Fig.2
−
15
−
dB
high IP3 (see Fig.2; stripline = 0 mm)
−
19
−
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
−
16
−
dB
typical application; see Fig.2;
IS = 15 mA
−
1.5
−
dB
high IP3 (see Fig.2; stripline = 0 mm)
−
1.6
−
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
−
1.7
−
dB
typical application; see Fig.2
−
−2
−
dBm
high IP3 (see Fig.2; stripline = 0 mm)
−
4
−
dBm
high IP3 (see Fig.2; stripline = 1.5 mm)
−
10
−
dBm
3
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
APPLICATION INFORMATION
handbook, full pagewidth
VS
VS
VC
VC
C5
C3
C4
BIAS
CIRCUIT
L2
C2
OUT
C1
RF in
RF out
MLD480
IN
SOT363
L1
GND
C6
stripline
Fig.2 Application circuit.
List of components (see Fig.2)
COMPONENT
DESCRIPTION
TYPICAL
APPLICATION
HIGH IP3
APPLICATION
DIMENSIONS
C1, C2
multilayer ceramic chip capacitor
100 pF
100 pF
0603
C3, C5
multilayer ceramic chip capacitor
22 nF
22 nF
0603
C4
multilayer ceramic chip capacitor
5.6 pF
5.6 pF
0603
C6
multilayer ceramic chip capacitor
−
2 x 100 nF
0805
L1
SMD inductor
−
10 nH
0603
L2
SMD inductor
−
8.2 nH
0603
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (εr = 6.15),
board thickness = 0.64 mm, copper thickness = 35 µm, gold thickness = 5 µm.
2000 Dec 04
4
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
MLD481
30
BGA2011
MLD482
20
handbook, halfpage
handbook, halfpage
IS
(mA)
gain
(dB)
gain
(dB)
s21
IS 2
15
20
20
15
Gmax
10
10
s21 2
IS
10
5
5
0
0
0
0
1000
2000
f (MHz)
3000
0
IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
Fig.3
VC (V)
3
f = 900 MHz; VS = 3 V; PD = −30 dBm.
Insertion gain (|s21|2) and Gmax as
functions of frequency; typical values.
Fig.4
MLD483
20
2
1
Insertion gain and supply current as
functions of control voltage; typical values.
MLD484
15
handbook, halfpage
handbook, halfpage
s 2
21
(dB)
0
IP3in
(dBm)
IP3out
(dBm)
15
10
−5
IP3in
10
IP3out
5
−10
5
0
10−3
10−2
IC (mA)
0
10−1
5
10
IS (mA)
−15
15
VS = VC = 3 V; PD = −30 dBm (both tones); f = 900 MHz; ∆f = 100 kHz.
f = 900 MHz; VS = 4 V; PD = −30 dBm.
Fig.5
2000 Dec 04
Fig.6
Insertion gain as a function of control
current; typical values.
5
Output and input 3rd order intercept point
as a function of supply current;
typical application; typical values.
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
MLD485
2
handbook, halfpage
NF
(dB)
1.6
1.2
0.8
0.4
0
10
5
IS (mA)
15
VS = VC = 3 V; f = 900 MHz.
Fig.7
Noise figure as a function of supply
current; typical values.
Scattering parameters
VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω; Tamb = 25 °C
f
(MHz)
s21
s11
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100
0.553
−22.45
16.198
160.5
0.006
76.72
0.115
−87.98
200
0.499
−42.12
14.354
145.4
0.012
67.53
0.184
−113.5
400
0.394
−71.44
10.688
124.6
0.018
59.55
0.256
−141.2
600
0.331
−90.58
8.156
112.2
0.021
58.29
0.283
−158.1
800
0.295
−104.0
6.512
103.9
0.024
60.91
0.293
−170.5
1000
0.276
−114.9
5.415
97.72
0.027
64.65
0.298
178.7
1200
0.267
−124.2
4.640
93.01
0.032
69.04
0.304
169.5
1400
0.262
−134.2
4.112
89.10
0.037
73.22
0.310
162.5
1600
0.270
−144.2
3.659
85.21
0.043
75.43
0.311
157.0
1800
0.287
−152.7
3.336
82.21
0.049
77.84
0.309
152.7
2000
0.309
−159.7
3.045
78.21
0.057
78.60
0.312
150.5
2200
0.339
−166.2
2.849
73.94
0.066
77.96
0.304
149.6
2400
0.360
−172.0
2.680
69.19
0.076
75.04
0.291
151.4
2600
0.390
−175.9
2.511
64.60
0.086
74.92
0.292
149.2
2800
0.398
178.0
2.332
59.20
0.094
69.95
0.278
148.4
3000
0.392
173.9
2.108
56.72
0.099
69.12
0.317
140.0
2000 Dec 04
6
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
0.2
0.2
0
180°
0.5
1
2
5
0°
0
3 GHz
100 MHz
900 MHz
−0.2
−5
−0.5
−2
−135°
−45°
−1
MLD486
1.0
−90°
IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
Fig.8 Common emitter input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
135°
45°
500 MHz
100 MHz
20
16
900 MHz
12
8
1.8 GHz
3 GHz
4
180°
0°
−135°
−45°
−90°
MLD487
IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
Fig.9 Common emitter forward transmission coefficient (s21); typical values.
2000 Dec 04
7
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
90°
handbook, full pagewidth
135°
45°
3 GHz
20
16
12
8
4
180°
0°
100 MHz
−135°
−45°
−90°
MLD488
IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
Fig.10 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
3 GHz
180°
0.2
0
0.5
0.2
1
2
5
0°
900 MHz
0
100 MHz
−5
−0.2
−0.5
−2
−135°
−45°
−1
MLD489
1.0
−90°
IC = 15 mA; VS = VC = 3 V; PD = −30 dBm; Zo = 50 Ω.
Fig.11 Common emitter output reflection coefficient (s22); typical values.
2000 Dec 04
8
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2000 Dec 04
REFERENCES
IEC
JEDEC
EIAJ
SC-88
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Dec 04
10
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
NOTES
2000 Dec 04
11
BGA2011
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Internet: http://www.semiconductors.philips.com
SCA 70
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
613516/02/pp12
Date of release: 2000
Dec 04
Document order number:
9397 750 07678