DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.) It has lange dynamic range and good current characteristic. • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • High Power Gain Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation PT 600 mW 150 C to +150 C Junction Temperature Tj Storage Temperature Tstg 20 65 V 2.54 (0.1) 1.27 (0.05) 1 2 1. Base 2. Emitter 3. Collector 4.2 MAX. (0.165 MAX.) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1.77 MAX. (0.069 MAX.) 0.5 (0.02) MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 14 MIN. (0.551 MIN.) 5.5 MAX. (0.216 MAX.) FEATURES 3 EIAJ : SC-43B JEDEC : TO-92 IEC : PA33 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1.0 V, IC = 0 DC Current Gain hFE Gain Bandwidth Product 50 fT Output Capacitance Cob Insertion Power Gain S21e 120 300 6.5 0.65 2 VCE = 10 V, IC = 20 mA GHz pF VCB = 10 V, IE = 0, f = 1.0 MHz 9.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz dB VCE = 10 V, IC = 40 mA, f = 1.0 GHz Noise Figure NF 1.1 Noise Figure NF 1.8 1.0 VCE = 10 V, IC = 20 mA 3.0 hFE Classification Class K Marking K hFE 50 to 300 Document No. P10355EJ3V1DS00 (3rd edition) Date Published March 1997 N Printed in Japan © 1985 2SC3355 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 heat sink 19 With heat sink 7.8 500 Free air 0 50 100 Cre-Feed-back Capacitance-pF f = 1.0 MHz 10 1000 3.8 PT-Total Power Dissipation-mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1 0.5 150 0.3 0 TA-Ambient Temperature-°C 0.5 1 2 5 10 VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT 15 VCE = 10 V |S21e|2-Insertion Gain-dB hFE-DC Current Gain 100 50 20 1 5 30 INSERTION GAIN vs. COLLECTOR CURRENT 200 10 0.5 20 10 10 5 0 0.5 50 VCE = 10 V f = 1.0 GHz IC-Collector Current-mA 1 5 10 50 70 IC-Collector Current-mA GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY 10 5.0 20 3.0 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB fT-Gain Bandwidth Product-GHz Gmax 2.0 1.0 0.5 0.3 |S21e|2 10 0.2 VCE = 10 V IC = 20 mA VCE = 10 V 0 0.1 0 0.5 10 5.0 10 IC-Collector Current-mA 2 30 0.1 0.2 0.4 f-Frequency-GHz 0.6 0.8 10 2 2SC3355 INTERMODULATIOn DISTORTION vs. COLLECTOR CURRENT NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V f = 1.0 GHz 6 IM3 4 −70 3 IM2, IM3 (dB) NF-Noise Figure-dB −80 5 2 1 0 0.5 −60 IM2 −50 1 5 10 VCE = 10 V at V0 + 100 dB µ V/50 Ω Rg = Re = 50 Ω 50 70 −40 IC-Collector Current-mA −30 IM2 f = 90 + 100 MHz IM3 f = 2 × 200 − 190 MHz 20 30 40 50 60 70 IC-Collector Current-mA S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50 S11 200 0.173 400 0.054 600 0.013 S11 80.3 77.0 57.9 S21 S21 S12 S12 S22 13.652 103.4 0.041 73.8 0.453 7.217 85.1 0.066 71.2 0.427 4.936 74.0 0.113 69.3 800 0.028 0.428 81.8 3.761 62.3 0.144 67.0 0.414 1000 1200 0.062 82.2 3.094 58.3 0.183 64.7 0.392 0.091 80.7 2.728 52.9 0.215 61.7 0.377 1400 0.121 80.2 2.321 44.9 0.240 58.7 0.359 1600 0.148 80.1 2.183 36.4 0.288 50.7 0.354 1800 0.171 80.0 1.892 30.2 0.305 46.8 0.345 2000 0.207 79.9 1.814 21.4 0.344 39.1 0.344 f (MHz) S22 21.8 26.0 30.8 37.2 43.2 51.4 58.3 67.2 80.0 90.4 VCE = 10 V, IC = 40 mA, ZO = 50 S11 200 0.011 400 0.028 S11 60.1 42.9 600 0.027 25.1 f (MHz) S21 S21 S12 105.4 0.040 S12 73.3 0.421 7.338 82.9 0.069 66.7 0.416 4.996 72.7 0.114 69.4 0.414 13.76 S22 800 0.043 65.7 3.801 61.9 0.144 67.8 0.406 1000 0.074 75.1 3.134 57.6 0.183 63.4 0.386 1200 0.098 75.6 2.759 52.4 0.221 62.1 0.373 1400 0.120 74.1 2.351 44.4 0.247 55.7 0.356 1600 0.146 75.8 2.203 36.0 0.291 49.6 0.347 1800 0.171 77.2 1.910 29.9 0.299 46.0 0.342 2000 0.205 78.0 1.825 21.3 0.344 39.4 0.335 S22 17.5 22.8 28.7 35.7 41.8 49.8 56.3 66.6 78.8 89.6 3 2SC3355 S-PARAMETER 1.4 1.2 1.6 1.8 2.0 5 0. 4 0. 0 3. C 0.6 O 0.8 0 1. 6.0 0.4 50 0.27 0.23 0 1. 5.0 1.0 ) 4.0 E NC TA X AC −J––O– RE –Z ( 0.8 0 0.6 E IV AT 3. NE G 0.4 2.0 1.8 3 0.3 7 1.6 0.2 −6 0 1.4 0.1 4 0.3 6 0.1 0.35 0.15 −70 1.2 18 0.36 0.14 −80 1.0 32 −90 0.37 0.13 0.38 0.12 0.9 0. 0.8 0 0.7 −5 0. 0. 5 0. 0. 31 19 0.6 0.2 8 0 −4 CONDITION VCE = 10 V IC = 40 mA 0.39 0.11 −100 0 −11 0.40 0.10 0. 4 0. 3 07 30 −1 0.4 1 0.0 0.4 9 0 2 −1 .08 20 90° 120° 60° 60° 150° 2.0 GHz 2.0 GHz 4 30° S12e S21e 8 12 −150° 4 0.2 2 −20 IC = 20 mA S22e 0.2 9 0.2 1 0.3 −3 0.2 0 0 0 4 0. −10 8 0. 2.0 GHz 0.26 0.24 10 ) 0.6 30° 16 20 −60° 0.2 GHz 0° 180° −30° −90° 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.2 0.9 1.0 0.7 0.8 0.6 0.5 0.4 1.4 0.1 ( IC = 40 mA 0.2 GHz 0.4 0.2 GHz S12e-FREQUENCY 150° −120° 50 0 0.3 20 REACTANCE COMPONENT R –––– 0.2 ZO 0.25 0.25 0.2 IC = 40 mA 20 0.3 0.2 0.6 10 IC = 20 mA VCE = 10 V IC = 40 mA 0.2 GHz 180° 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 4.0 1.0 S11e 2.0 GHz 90° 120° 0. 18 32 0. 50 1 0.2 9 0.2 30 CONDITION 0.1 0.3 7 3 0.4 ( –Z–+–J–XTANCE CO ) MPO N T EN 0.2 S21e-FREQUENCY 600 0.2 0.1 0.3 0.1 6 0.3 4 70 40 WAVELE NG 0.9 0.8 0.6 12 0.15 0.35 0 0.2 0 0.3 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.0W2ARD LOADLECTION COEF F F 0.4 C E O I R E 0.0TOR T 3 N F T IN D O 6 7 0.0 THS ANGLE 4 EGR 0.4 NG EES 0.4 0 4 VELE −160 0 . 6 0 .0 A 0W 5 15 0 0.4 5 0.4 5 0 15 0 − . 5 0 0. 4 0 4 POS 0.1 14 0.4 6 0. 06 40 ENT ITIV ON 0 ER 4 MP 0. −1 EA CO 0 0.14 0.36 80 90 19 0. 31 0. 07 43 0. 0 13 0. 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.7 8 0.0 2 0.4 9 0.0 1 0.4 1.0 VCE = 10 V 0.2 CONDITION 0.8 S11e, S22e-FREQUENCY 0.1 0.2 0.3 −150° 0.4 0.5 0° −30° −60° −120° −90° 2SC3355 [MEMO] 5 2SC3355 [MEMO] 6 2SC3355 [MEMO] 7 2SC3355 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5