NEC 2SC4228-T2

DATA SHEET
SILICON TRANSISTOR
2SC4228
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
PACKAGE DIMENSIONS
The 2SC4228 is a low supply voltage transistor designed for VHF,
in millimeters
UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the
2.1 ± 0.1
transistor has been applied super mini mold package.
1.25 ± 0.1
This is achieved by direct nitride passivated base surface process
• High fT
: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Low Cre
: 0.3 pF TYP. (@ VCB = 3 V, IE = 0, f = 1 MHz)
• High
|S21e|2 :
2
3
1
+0.1
0.3 –0
FEATURES
2.0 ± 0.2
+0.1
0.3 –0
0.65 0.65
(NESATTM process) which is an NEC proprietary fabrication technique.
7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Super Mini Mold Package. (EIAJ: SC-70)
QUANTITY
2SC4228-T1
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
2SC4228-T2
3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to
perforation side of the tape.
PACKING STYLE
0.15 +0.1
–0.05
PART
NUMBER
0 to 0.1
ORDERING INFORMATION
0.9 ± 0.1
0.3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4228)
Document No. P10372EJ2V0DS00 (2nd edition)
(Previous No. TC-2404)
Date Published July 1995 P
Printed in Japan
©
1993
2SC4228
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
µA
VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
µA
VEB = 1 V, IC = 0
DC Current Gain
hFE
50
100
fT
5.5
8.0
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Cre
|S21e|2
0.3
5.5
NF
GHz
0.7
7.5
1.9
VCE = 3 V, IC = 5 mA*1
250
3.2
VCE = 3 V, IC = 5 mA, f = 2 GHz
pF
VCB = 3 V, IE = 0, f = 1 MHz*2
dB
VCE = 3 V, IC = 5 mA, f = 2 GHz
dB
VCE = 3 V, IC = 5 mA, f = 2 GHz
*1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
hFE Classification
2
Rank
R43
R44
R45
Marking
R43
R44
R45
hFE
50 to 100
80 to 160
125 to 250
2SC4228
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Free Air
IC – Collector Current – mA
PT – Total Power Dissipation – mW
25
200
100
0
50
100
160
20
A
140 µ
120 µA
15
100 µA
80 µA
10
60 µA
40 µA
5
IB = 20 µA
0
150
TA – Ambient Temperature – ˚C
0.5
1.0
V CE – Collector to Emitter Voltage – V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
20
200
VCE = 3 V
hFE – DC Current Gain
IC – Collector Current – mA
VCE = 3 V
10
0
0.5
100
50
20
10
0.5
1.0
1
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
10
50
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
fT – Gain Bandwidth Product – GHz
5.0
Cre – Feed-back Capacitance – pF
5
IC – Collector Current – mA
VBE – Base to Emitter Voltage – V
f = 1 MHz
2.0
1.0
0.5
0.2
0.1
µA
1
2
5
10
20
VCB – Collector to Base Voltage – V
50
VCE = 3 V
f = 2 GHz
8
6
4
2
0
0.5
1
5
10
50
I C – Collector Current – mA
3
2SC4228
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
FREQUENCY
25
VCE = 3 V
f = 2 GHz
|S21e|2 – Insertion Power Gain – dB
|S21e|2 – Insertion Power Gain – dB
12
8
4
0
0.5
1
5
10
50
NOISE FIGURE vs.
COLLECTOR CURRENT
5
NF – Noise Figure – dB
VCE = 3 V
f = 2 GHz
4
3
2
1
1
5
10
IC – Collector Current – mA
4
20
15
10
5
0
0.1
0.5
1.0
f – Frequency – GHz
IC – Collector Current – mA
0
0.5
VCE = 3 V
IC = 5 mA
50
5.0
2SC4228
S-PARAMETER
VCE = 3 V, IC = 5 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
.875
.762
.677
.565
.495
.425
.372
.327
.289
.255
.236
.214
.195
.182
.165
.153
.145
.139
.134
.129
–18.6
–35.0
–47.2
–59.4
–67.5
–76.1
–81.6
–88.5
–93.6
–100.5
–105.2
–112.2
–117.6
–123.8
–129.9
–137.4
–144.3
–151.8
–157.0
–164.7
14.087
12.290
10.888
9.275
8.300
7.184
6.454
5.818
5.231
4.820
4.444
4.142
3.842
3.554
3.343
3.218
3.091
2.857
2.764
2.624
161.1
145.1
133.6
123.6
115.7
108.9
104.8
99.5
95.5
92.0
88.8
85.3
83.2
79.3
77.4
75.3
73.6
70.4
68.7
66.4
.018
.034
.048
.055
.063
.074
.084
.089
.092
.104
.105
.113
.122
.127
.139
.140
.152
.162
.168
.176
78.2
68.6
66.6
65.8
63.5
61.1
63.8
62.7
64.6
62.8
64.2
64.2
63.6
65.0
64.1
64.5
65.4
64.3
62.3
64.8
.958
.888
.800
.719
.669
.610
.600
.560
.543
.519
.512
.497
.476
.481
.467
.466
.458
.456
.451
.445
–10.1
–17.7
–24.4
–26.7
–28.7
–30.3
–30.6
–31.3
–30.1
–33.4
–31.8
–33.4
–33.2
–34.2
–34.6
–34.8
–37.2
–36.1
–38.4
–39.0
VCE = 3 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
.943
.868
.815
.717
.655
.577
.518
.468
.420
.380
.344
.321
.291
.273
.250
.228
.219
.199
.193
.182
–13.4
–26.6
–37.7
–48.9
–56.8
–65.5
–71.2
–78.1
–83.7
–90.6
–94.8
–101.6
–105.9
–111.7
–117.2
–122.4
–128.5
–135.3
–139.6
–146.9
9.384
8.668
8.165
7.279
6.780
6.061
5.504
5.074
4.632
4.340
3.951
3.717
3.485
3.306
3.134
2.959
2.819
2.699
2.572
2.474
165.9
152.8
142.9
132.9
125.5
118.0
112.8
106.7
102.8
98.3
94.8
90.5
87.6
84.3
80.7
79.0
76.0
73.9
71.9
68.3
.020
.038
.051
.062
.075
.084
.091
.098
.102
.105
.112
.121
.128
.135
.140
.145
.153
.161
.163
.175
84.1
77.2
67.9
63.9
63.9
60.0
59.7
57.0
59.0
56.6
57.8
59.0
58.7
59.8
58.0
59.5
59.0
58.4
60.3
59.8
.969
.936
.876
.804
.764
.708
.685
.639
.611
.592
.579
.551
.532
.535
.511
.516
.504
.493
.489
.482
–7.7
–13.8
–20.9
–23.5
–26.7
–29.7
–31.1
–32.0
–32.8
–35.0
–34.1
–35.0
–35.9
–36.6
–37.5
–37.7
–39.0
–39.9
–41.4
–41.4
5
2SC4228
S-PARAMETER
VCE = 3 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY
MHz
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.0
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
6
S11
MAG
1.023
.983
.975
.922
.899
.849
.812
.774
.727
.680
.651
.616
.575
.546
.512
.481
.463
.440
.419
.394
S21
S12
S22
ANG
MAG
ANG
MAG
ANG
MAG
ANG
–7.6
–16.1
–22.4
–31.8
–36.9
–44.7
–50.6
–57.1
–62.9
–69.3
–74.1
–79.8
–85.2
–90.6
–95.8
–100.6
–106.3
–111.8
–116.4
–121.2
3.505
3.400
3.368
3.219
3.186
3.046
2.905
2.830
2.694
2.597
2.479
2.392
2.302
2.207
2.110
2.034
1.989
1.903
1.854
1.779
172.1
163.3
157.3
149.1
143.3
135.7
131.1
124.4
119.2
114.1
109.3
104.8
101.1
96.0
92.1
88.8
85.5
82.2
78.9
75.5
.025
.039
.061
.075
.093
.105
.113
.128
.134
.146
.146
.155
.155
.160
.168
.165
.176
.173
.174
.173
86.4
79.3
74.6
70.7
66.4
62.2
61.7
55.7
55.6
53.7
50.3
49.8
46.2
46.7
43.6
45.5
45.3
43.8
43.5
43.7
.995
.986
.976
.936
.922
.885
.880
.846
.808
.790
.766
.741
.714
.708
.685
.676
.667
.649
.633
.630
–4.6
–7.8
–12.8
–15.1
–18.8
–22.5
–24.4
–27.2
–28.8
–31.8
–32.8
–34.9
–35.9
–36.8
–38.4
–40.1
–41.8
–42.3
–44.2
–45.2
2SC4228
[MEMO]
7
2SC4228
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
8