DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. It is suitable for a high density surface mount assembly since the 2.1 ± 0.1 transistor has been applied super mini mold package. 1.25 ± 0.1 This is achieved by direct nitride passivated base surface process • High fT : 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) • Low Cre : 0.3 pF TYP. (@ VCB = 3 V, IE = 0, f = 1 MHz) • High |S21e|2 : 2 3 1 +0.1 0.3 –0 FEATURES 2.0 ± 0.2 +0.1 0.3 –0 0.65 0.65 (NESATTM process) which is an NEC proprietary fabrication technique. 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) • Super Mini Mold Package. (EIAJ: SC-70) QUANTITY 2SC4228-T1 3 kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 2SC4228-T2 3 kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. PACKING STYLE 0.15 +0.1 –0.05 PART NUMBER 0 to 0.1 ORDERING INFORMATION 0.9 ± 0.1 0.3 Marking PIN CONNECTIONS 1. Emitter 2. Base 3. Collector * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4228) Document No. P10372EJ2V0DS00 (2nd edition) (Previous No. TC-2404) Date Published July 1995 P Printed in Japan © 1993 2SC4228 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation PT 150 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 µA VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 µA VEB = 1 V, IC = 0 DC Current Gain hFE 50 100 fT 5.5 8.0 Gain Bandwidth Product Feedback Capacitance Insertion Power Gain Noise Figure Cre |S21e|2 0.3 5.5 NF GHz 0.7 7.5 1.9 VCE = 3 V, IC = 5 mA*1 250 3.2 VCE = 3 V, IC = 5 mA, f = 2 GHz pF VCB = 3 V, IE = 0, f = 1 MHz*2 dB VCE = 3 V, IC = 5 mA, f = 2 GHz dB VCE = 3 V, IC = 5 mA, f = 2 GHz *1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification 2 Rank R43 R44 R45 Marking R43 R44 R45 hFE 50 to 100 80 to 160 125 to 250 2SC4228 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Free Air IC – Collector Current – mA PT – Total Power Dissipation – mW 25 200 100 0 50 100 160 20 A 140 µ 120 µA 15 100 µA 80 µA 10 60 µA 40 µA 5 IB = 20 µA 0 150 TA – Ambient Temperature – ˚C 0.5 1.0 V CE – Collector to Emitter Voltage – V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 20 200 VCE = 3 V hFE – DC Current Gain IC – Collector Current – mA VCE = 3 V 10 0 0.5 100 50 20 10 0.5 1.0 1 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 10 50 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 fT – Gain Bandwidth Product – GHz 5.0 Cre – Feed-back Capacitance – pF 5 IC – Collector Current – mA VBE – Base to Emitter Voltage – V f = 1 MHz 2.0 1.0 0.5 0.2 0.1 µA 1 2 5 10 20 VCB – Collector to Base Voltage – V 50 VCE = 3 V f = 2 GHz 8 6 4 2 0 0.5 1 5 10 50 I C – Collector Current – mA 3 2SC4228 INSERTION POWER GAIN vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. FREQUENCY 25 VCE = 3 V f = 2 GHz |S21e|2 – Insertion Power Gain – dB |S21e|2 – Insertion Power Gain – dB 12 8 4 0 0.5 1 5 10 50 NOISE FIGURE vs. COLLECTOR CURRENT 5 NF – Noise Figure – dB VCE = 3 V f = 2 GHz 4 3 2 1 1 5 10 IC – Collector Current – mA 4 20 15 10 5 0 0.1 0.5 1.0 f – Frequency – GHz IC – Collector Current – mA 0 0.5 VCE = 3 V IC = 5 mA 50 5.0 2SC4228 S-PARAMETER VCE = 3 V, IC = 5 mA, ZO = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 .875 .762 .677 .565 .495 .425 .372 .327 .289 .255 .236 .214 .195 .182 .165 .153 .145 .139 .134 .129 –18.6 –35.0 –47.2 –59.4 –67.5 –76.1 –81.6 –88.5 –93.6 –100.5 –105.2 –112.2 –117.6 –123.8 –129.9 –137.4 –144.3 –151.8 –157.0 –164.7 14.087 12.290 10.888 9.275 8.300 7.184 6.454 5.818 5.231 4.820 4.444 4.142 3.842 3.554 3.343 3.218 3.091 2.857 2.764 2.624 161.1 145.1 133.6 123.6 115.7 108.9 104.8 99.5 95.5 92.0 88.8 85.3 83.2 79.3 77.4 75.3 73.6 70.4 68.7 66.4 .018 .034 .048 .055 .063 .074 .084 .089 .092 .104 .105 .113 .122 .127 .139 .140 .152 .162 .168 .176 78.2 68.6 66.6 65.8 63.5 61.1 63.8 62.7 64.6 62.8 64.2 64.2 63.6 65.0 64.1 64.5 65.4 64.3 62.3 64.8 .958 .888 .800 .719 .669 .610 .600 .560 .543 .519 .512 .497 .476 .481 .467 .466 .458 .456 .451 .445 –10.1 –17.7 –24.4 –26.7 –28.7 –30.3 –30.6 –31.3 –30.1 –33.4 –31.8 –33.4 –33.2 –34.2 –34.6 –34.8 –37.2 –36.1 –38.4 –39.0 VCE = 3 V, IC = 3 mA, ZO = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 .943 .868 .815 .717 .655 .577 .518 .468 .420 .380 .344 .321 .291 .273 .250 .228 .219 .199 .193 .182 –13.4 –26.6 –37.7 –48.9 –56.8 –65.5 –71.2 –78.1 –83.7 –90.6 –94.8 –101.6 –105.9 –111.7 –117.2 –122.4 –128.5 –135.3 –139.6 –146.9 9.384 8.668 8.165 7.279 6.780 6.061 5.504 5.074 4.632 4.340 3.951 3.717 3.485 3.306 3.134 2.959 2.819 2.699 2.572 2.474 165.9 152.8 142.9 132.9 125.5 118.0 112.8 106.7 102.8 98.3 94.8 90.5 87.6 84.3 80.7 79.0 76.0 73.9 71.9 68.3 .020 .038 .051 .062 .075 .084 .091 .098 .102 .105 .112 .121 .128 .135 .140 .145 .153 .161 .163 .175 84.1 77.2 67.9 63.9 63.9 60.0 59.7 57.0 59.0 56.6 57.8 59.0 58.7 59.8 58.0 59.5 59.0 58.4 60.3 59.8 .969 .936 .876 .804 .764 .708 .685 .639 .611 .592 .579 .551 .532 .535 .511 .516 .504 .493 .489 .482 –7.7 –13.8 –20.9 –23.5 –26.7 –29.7 –31.1 –32.0 –32.8 –35.0 –34.1 –35.0 –35.9 –36.6 –37.5 –37.7 –39.0 –39.9 –41.4 –41.4 5 2SC4228 S-PARAMETER VCE = 3 V, IC = 1 mA, ZO = 50 Ω FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.0 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 6 S11 MAG 1.023 .983 .975 .922 .899 .849 .812 .774 .727 .680 .651 .616 .575 .546 .512 .481 .463 .440 .419 .394 S21 S12 S22 ANG MAG ANG MAG ANG MAG ANG –7.6 –16.1 –22.4 –31.8 –36.9 –44.7 –50.6 –57.1 –62.9 –69.3 –74.1 –79.8 –85.2 –90.6 –95.8 –100.6 –106.3 –111.8 –116.4 –121.2 3.505 3.400 3.368 3.219 3.186 3.046 2.905 2.830 2.694 2.597 2.479 2.392 2.302 2.207 2.110 2.034 1.989 1.903 1.854 1.779 172.1 163.3 157.3 149.1 143.3 135.7 131.1 124.4 119.2 114.1 109.3 104.8 101.1 96.0 92.1 88.8 85.5 82.2 78.9 75.5 .025 .039 .061 .075 .093 .105 .113 .128 .134 .146 .146 .155 .155 .160 .168 .165 .176 .173 .174 .173 86.4 79.3 74.6 70.7 66.4 62.2 61.7 55.7 55.6 53.7 50.3 49.8 46.2 46.7 43.6 45.5 45.3 43.8 43.5 43.7 .995 .986 .976 .936 .922 .885 .880 .846 .808 .790 .766 .741 .714 .708 .685 .676 .667 .649 .633 .630 –4.6 –7.8 –12.8 –15.1 –18.8 –22.5 –24.4 –27.2 –28.8 –31.8 –32.8 –34.9 –35.9 –36.8 –38.4 –40.1 –41.8 –42.3 –44.2 –45.2 2SC4228 [MEMO] 7 2SC4228 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8